Identification and feasibility test of specialized rural pedestrian safety training. Volume 3: PEDSAFE junior/senior high school materials. Final report.

National Highway Traffic Safety Administration, Washington, D.C.

Test methods for high temperature materials characterization /

"Final report for period February 1976-December 1978."

Thermal properties of high-temperature materials /

"June 1964."

Handling of high-finish materials during shipment.

Typescript.

Research on properties of high strength materials suitable for high temperature applications

"Materials Central, Contract no. AF 33(616)-6552, Project no. 7381."

Dielectric spectroscopy of high-temperture materials

Mode of access: Internet.

Dielectric measurements on high-temperature materials

Prepared by Massachusetts Institute of Technology, Laboratory for Insulation Research, under USAF Contract F33615-67C-1612.

Measurement of dielectric parameters of high-loss materials in distributed circuits.

"Prepared by the Massachusetts Institute of Technology, Laboratory for Insulation Research, Cambridge, Massachusetts, under USAF Contract AF 33(615)-2199."

Thermal tunability of photonic bandgaps in photonic crystal fibers selectively filled with nematic liquid crystal

We address the bandgap effect and the thermo-optical response of high-index liquid crystal (LC) infiltrated in photonic crystal fibers (PCF) and in hybrid photonic crystal fibers (HPCF). The PCF and HPCF consist of solid-core microstructured optical fibers with hexagonal lattice of air-holes or holes filled with LC. The HPCF is built from the PCF design by changing its cladding microstructure only in a horizontal central line by including large holes filled with high-index material. The HPCF supports propagating optical modes by two physical effects: the modified total internal reflection (mTIR) and the photonic bandgap (PBG). Nevertheless conventional PCF propagates light by the mTIR effect if holes are filled with low refractive index material or by the bandgap effect if the microstructure of holes is filled with high refractive-index material. The presence of a line of holes with high-index LC determines that low-loss optical propagation only occurs on the bandgap condition. The considered nematic liquid crystal E7 is an anisotropic uniaxial media with large thermo-optic coefficient; consequently temperature changes cause remarkable shifts in the transmission spectrums allowing thermal tunability of the bandgaps. Photonic bandgap guidance and thermally induced changes in the transmission spectrum were numerically investigated by using a computational program based on the beam propagation method. © 2010 SPIE.

Chemical Approaches to the Design of Oxide Materials.

Chemical methods of synthesis play a crucial role in designing and discovering new and novel materials and in providing less cumbersome methods for preparing known materials. Chemical methods also enable the synthesis of metastable materials which are otherwise difficult to prepare. In this presentation, the various innovative chemical methods of synthesising oxide materials will be briefly reviewed with emphasis on soft-chemical routes. Electrochemical synthesis, ion-exchange method, alkali-flux method and some of the interaction reactions will be highlighted, besides topochemical aspects of solid state synthesis. Cuprate superconductors as well as intergrowth structures will also be examined.

High performance sol-gel spin-coated titanium dioxide dielectric based MOS structures

High-kappa TiO2 thin films have been fabricated using cost effective sol-gel and spin-coating technique on p-Si (100) wafer. Plasma activation process was used for better adhesion between TiO2 films and Si. The influence of annealing temperature on the structure-electrical properties of titania films were investigated in detail. Both XRD and Raman studies indicate that the anatase phase crystallizes at 400 degrees C, retaining its structural integrity up to 1000 degrees C. The thickness of the deposited films did not vary significantly with the annealing temperature, although the refractive index and the RMS roughness enhanced considerably, accompanied by a decrease in porosity. For electrical measurements, the films were integrated in metal-oxide-semiconductor (MOS) structure. The electrical measurements evoke a temperature dependent dielectric constant with low leakage current density. The Capacitance-voltage (C-V) characteristics of the films annealed at 400 degrees C exhibited a high value of dielectric constant (similar to 34). Further, frequency dependent C-V measurements showed a huge dispersion in accumulation capacitance due to the presence of TiO2/Si interface states and dielectric polarization, was found to follow power law dependence on frequency (with exponent `s'=0.85). A low leakage current density of 3.6 x 10(-7) A/cm(2) at 1 V was observed for the films annealed at 600 degrees C. The results of structure-electrical properties suggest that the deposition of titania by wet chemical method is more attractive and cost-effective for production of high-kappa materials compared to other advanced deposition techniques such as sputtering, MBE, MOCVD and AID. The results also suggest that the high value of dielectric constant kappa obtained at low processing temperature expands its scope as a potential dielectric layer in MOS device technology. (C) 2015 Elsevier Ltd. All rights reserved.