979 resultados para Guangzhou fa zheng zhuan men xue xiao


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This paper reports that the TM3+:Lu2SiO5 (Tm:LSO) crystal is grown by Czochralski technique. The room-temperature absorption spectra of Tm:LSO crystal are measured on a b-cut sample with 4 at.% thulium. According to the obtained Judd-Ofelt intensity parameters Omega(2)=9.3155 x 10(-20) cm(2), Omega(4)=8.4103 x 10(-20) cm(2), Omega(6)=1.5908 x 10(-20) cm(2), the fluorescence lifetime is calculated to be 2.03 ms for F-3(4) -> H-3(6) transition, and the integrated emission cross section is 5.81 x 10(-18) cm(2). Room-temperature laser action near 2 mu m under diode pumping is experimentally evaluated in Tm:LSO. An optical-optical conversion efficiency of 9.1% and a slope efficiency of 16.2% are obtained with continuous-wave maximum output power of 0.67 W. The emission wavelengths of Tm:LSO laser are centred around 2.06 mu m with spectral bandwidth of similar to 13.6 nm.

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The Ho:YAP crystal is grown by the Czochralski technique. The room-temperature polarized absorption spectra of Ho:YAP crystal was measured on a c-cut sample with 1 at% holmium. According to the obtained Judd-Ofelt intensity parameters Omega(2) = 1.42 x 10(-20) cm(2), Omega(4) = 2.92 x 10(-20) cm(2), and Omega(6) = 1.71 x 10(-20) cm(2), this paper calculated the fluorescence lifetime to be 6 ms for I-5(7) -> I-5(8) transition, and the integrated emission cross section to be 2.24 x 10(-18) cm(2). It investigates the room-temperature Ho:YAP laser end-pumped by a 1.91-mu m Tm:YLF laser. The maximum output power was 4.1 W when the incident 1.91-mu m pump power was 14.4W. The slope efficiency is 40.8%, corresponding to an optical-to-optical conversion efficiency of 28.4%. The Ho:YAP output wavelength was centred at 2118 nm with full width at half maximum of about 0.8 nm.

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Fig trees are pollinated by fig wasps, which also oviposit in female flowers. The wasp larvae gall and eat developing seeds. Although fig trees benefit from allowing wasps to oviposit, because the wasp offspring disperse pollen, figs must prevent wasps fr

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In reciprocal mutualism systems, the exploitation events by exploiters might disrupt the reciprocal mutualism, wherein one exploiter species might even exclude other coexisting exploiter species over an evolutionary time frame. What remains unclear is how such a community is maintained. Niche partitioning, or spatial heterogeneity among the mutualists and exploiters, is generally believed to enable stability within a mutualistic system. However, our examination of a reciprocal mutualism between a fig species (Ficus racemosa) and its pollinator wasp (Ceratosolen fusciceps) shows that spatial niche partitioning does not sufficiently prevent exploiters from overexploiting the common resource (i.e., the female flowers), because of the considerable niche overlap between the mutualists and exploiters. In response to an exploiter, our experiment shows that the fig can (1) abort syconia-containing flowers that have been galled by the exploiter, Apocryptophagus testacea, which oviposits before the pollinators do; and (2) retain syconia-containing flowers galled by Apocryptophagus mayri, which oviposit later than pollinators. However, as a result of (2), there is decreased development of adult non-pollinators or pollinator species in syconia that have not been sufficiently pollinated, but not aborted. Such discriminative abortion of figs or reduction in offspring development of exploiters while rewarding cooperative individuals with higher offspring development by the fig will increase the fitness of cooperative pollinating wasps, but decrease the fitness of exploiters. The fig fig wasp interactions are diffusively coevolved, a case in which fig wasps diversify their genotype, phenotype, or behavior as a result of competition between wasps, while figs diverge their strategies to facilitate the evolution of cooperative fig waps or lessen the detrimental behavior by associated fig wasps. In habitats or syconia that suffer overexploitation, discriminative abortion of figs or reduction in the offspring development of exploiters in syconia that are not or not sufficiently pollinated will decrease exploiter fitness and perhaps even drive the population of exploiters to local extinction, enabling the evolution and maintenance of cooperative pollinators through the movement between habitats or syconia (i.e., the metapopulations).

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目的:研究从药用植物金佛山雪胆分离的雪胆素A和雪胆素B两个三萜类化合物的体外抗HIV活性.方法:应用合胞体抑制实验、p24抗原产生的抑制实验、慢性感染细胞和正常细胞间的细胞融合抑制实验等技术检测化合物的体外抗HIV-l活性;利用HIV-l逆转录酶、蛋白酶抑制实验,NCp7锌离子逐出实验探讨化合物的作用机制.结果:雪胆素A和雪胆素B在体外有较好的抑制HIV-l活性,其活性主要表现为:(1)抑制HIV-l诱导合胞体形成,EC50值分别为3.09 μg·mL-1和2.53μg·mL-1;(2)抑制HIV- 急性感染的C8106细胞p24抗原产生,EC50值分别为3.97μg·mL-1和18.90μg·mL-1;(3)抑制HIV-1 慢性感染H9与正常C8166细胞间融合,EC50分别为1.76μg·mL-1和11.95μg·mL-1.雪胆素A和雪胆素B对HIV-l逆转录酶、蛋白酶、NCp7锌离子逐出均没有抑制作用.雪胆素A对HIV-1整合酶有微弱的结合活性,而雪胆素B对HIV-1整合酶没有结合活性.在共培养实验中,雪胆素A和雪胆素B预处理C8166细胞组比未经预处理细胞组能够更有效的抑制HIV-l活性.结论:化合物雪胆素A和雪胆素B体外有较好的抗HIV-1活性,可能主要作用于HIV-1病毒进入细胞阶段.

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A total of 36 compounds (1-36) were obtained from the stem bark of Poncirus trifoliata including three new prenylated flavonoids, (-)-5,4'-dihydroxy-7,8-[(3 '',4 ''-cis-dihydroxy-3 '',4 ''-dihydro)-2 '',2 ''-dimethylpyrano]-flavone (1), (-)-5,4'-dihydroxy-7,8-[(3 ''-hydroxy-4 ''-one)-2 '',2 ''-dimethylpyrano]-flavone (2), and (-)-5,4'-dihydroxy-7,8-[(cis-3 ''-hydroxy-4 ''-ethoxy-3 '',4 ''-dihydro)-2 '',2 ''-dimethylpyrano]-flavone (3). The new structures were elucidated by means of spectroscopic methods. Compounds 1-20 were evaluated for their anti-human immunodeficiency virus-1 (HIV-1) activity, in which 2 showed significant anti-HIV-1 activity with high therapeutic index (T1) of 143.65.

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A new species, Pseudogyrinocheilus longisulcus, was discovered from a tributary of Pearl River in Jingxi Co., Guangxi, China, The new species can be distinguished from other species of Pseudogyrinocheilus by the following combination of characteristics: prolonged post-labial grooves, and extended antero-medially close to anterior end of middle lower lip, but not meeting with its counterpart; posterior margin of lower lip free; scales of abdomen from thorax to pectoral-fin base embedded under skin; lateral-line scales 40-42; dark stripe longitudinal along lateral line on flank. The key to the species of Pseudogyrinocheilus is provided.

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A new AlGaN/AlN/GaN high electron mobility transistor (HEMT) structure using a compositionally step-graded AlGaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The structure demonstrates significant enhancement of two-dimensional electron gas (2DEG) mobility and smooth surface morphology compared with the conventional HEMT structure with high Al composition AlGaN barrier. The high 2DEG mobility of 1806 cm(2)/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5 mu m x 5 mu m are attributed to the improvement of interfacial and crystal quality by employing the step-graded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5 Omega/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/mm and a maximum drain current density of 800 mA/mm.

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Recently, we reported successful growth of high-quality GaAs/Si epilayers by using a very thin amorphous Si film as buffer layer. In this paper, the impurity properties of this kind of GaAs/Si epilayers have been studied by using PL spectrum, SIMS and Hall measurement. Compared to a typical PL spectrum of the GaAs/Si epilayers grown by conventional two-step method, a new peak was observed in our PL spectrum at the energy of 1.462 eV, which is assigned to the band-to-silicon acceptor recombination. The SIMS analysis indicates that the silicon concentration in this kind of GaAs/Si epilayers is about 10(18) cm(-3). But its carrier concentration (about 4 x 10(17) cm(-3)) is lower than the silicon concentration. The lower carrier concentration in this kind of GaAs/Si epilayer can be interpreted both as the result of higher compensation and as the result of the formation of the donor-defect complex. We also found that the high-quality and low-Si-concentration GaAs/Si epilayers can be regrown by using this kind of GaAs/Si epilayer as substrate. The FWHM of the X-ray (004) rocking curve from this regrowth GaAs epilayer is 118 '', it is much less than that of the first growth GaAs epilayer (160 '') and other reports for the GaAs/Si epilayer grown by using conventional two-step method (similar to 200 '').

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A Penning trap, which can measure the atomic masses with the highest precision, is one of the most important facilities in nuclear physics research nowadays. The precision mass data play an important role in the studies of nuclear models, mass formulas, nuclear synthesis processes in the nuclear astrophysics, symmetries of the weak interaction and the conserved vector current (CVC) hypothesis. The status of high precision mass measurement around the world, the basic principle of Penning trap and the basic information about the LPT (Lanzhou Penning Trap) are introduced.