957 resultados para Grating coupling coefficient
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The frequency response of the dielectric constant (epsilon(r)), the loss tangent (tan delta) and impedance Z of potassium acid phthalate (KAP) single crystals, monitored along the polar axis, exhibit strong resonances in the frequency range 50-200 kHz, depending on the dimensions of the sample. The observed resonance effect, which is strongly dependent on the geometric shape and size of the sample, is attributed to its piezoelectric nature. The resonance peak positions have been monitored as a function of both temperature and uniaxial pressure. The stiffness coefficient (C), computed based on the resonance data, is found to decrease with increasing temperature and increase with increasing pressure. The electro-mechanical coupling coefficient (k), obtained by resonance-anti-resonance method, has also been found to increase with rise in temperature. The epsilon(r) behaviour along the polar axis, as a function of temperature is consistent with that of k. The preliminary results on the influence, of partial replacement of K+ ions in the KAP crystal by Cs+ and Li+ ions, on the observed piezoelectric resonance effects are also included.
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Large single crystal of triglycine sulphate (dimension 100 mm along monoclinic b-axis and 15 mm in diameter) was grown using the unidirectional solution growth technique. The X-ray diffraction studies confirmed the growth/long axis to be b-axis (polar axis). The dielectric studies were carried out at various temperatures to establish the phase transition temperature. The frequency response of the dielectric constant, dielectric loss and impedance of the crystal along the growth axis, was monitored. These are typically characterized by strong resonance peaks in the kHz region. The piezoelectric coefficients like stiffness constant (C), elastic coefficient (S), electromechanical coupling coefficient (k) and d (31) were calculated using the resonance-antiresonance method. Polarization (P)-Electric field (E) hysteresis loops were recorded at various temperatures to find the temperature-dependent spontaneous polarization of the grown crystal. The pyroelectric coefficients were determined from the pyroelectric current measurement by the Byer and Roundy method. The ferroelectric domain patterns were recorded on (010) plane using scanning electron microscopy and optical microscopy.
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Lagrange's equation is utilized to show the analogy of a lossless microwave cavity resonator with the conventional LC network. A brief discussion on the resonant frequencies of a microwave cavity resonator and the two degenerate companion modes H01 and E11 appearing in a cavity is given. The first order perturbation theory of a small deformation of the wall of a cavity is discussed. The effects of perturbation, such as the change in the resonant frequency and the Q of a cavity, the change in the electromagnetic field configurations and hence mixing of modes are also discussed. An expression for the coupling coefficient between the two degenerate modes H01 and E11 is derived with the help of the field equations. Results indicate that in the absence of perturbation the above two degenerate modes can co-exist without losing their individual identities. Several applications of the perturbation theory, such as the measurement of the dielectric properties of matter, study of ferromagnetic resonance, etc., are described.
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The paper presents the study of wave propagation in quasicrystals. Our interest is in the computation of the wavenumber (k(n)) and group speed (c(g)) of the phonon and phason displacement modes of one, two, and three dimensional quasicrystals. These wave parameter expressions are derived and computed using the elasto-hydrodynamic equations for quasicrystals. For the computation of the wavenumber and group speeds, we use Fourier transform approximation of the phonon and the phason displacement modes. The characteristic equations obtained are a polynomial equation of the wavenumber (k(n)), with frequency as a parameter. The corresponding group speeds (c(g)) for different frequencies are then computed from the wavenumber k(n). The variation of wavenumber and group speeds with frequency is plotted for the 1-D quasicrystal, 2-D decagonal Al-Ni-Co quasicrystals, and 3-D icosahedral Al-Pd-Mn and Zn-Mg-Sc quasicrystals. From the wavenumber and group speeds plots, we obtain the cut-off frequencies for different spatial wavenumber eta(m). The results show that for 1-D, 2-D, and 3-D quasicrystals, the phonon displacement modes are non-dispersive for low values of eta(m) and becomes dispersive for increasing values of eta(m). The cut-off frequencies are not observed for very low values of eta(m), whereas the cut-off frequency starts to appear with increasing eta(m). The group speeds of the phason displacement modes are orders of magnitude lower than that of the phonon displacement modes, showing that the phason modes do not propagate, and they are essentially the diffusive modes. The group speeds of the phason modes are also not influenced by eta(m). The group speeds for the 2-D quasicrystal at 35 kHz is also simulated numerically using Galerkin spectral finite element methods in frequency domain and is compared with the results obtained using wave propagation analysis. The effect of the phonon and phason elastic constants on the group speeds is studied using 3-D icosahedral Al-Pd-Mn and Zn-Mg-Sc quasicrystals. It is also shown that the phason elastic constants and the coupling coefficient do not affect the group speeds of the phonon displacement modes. (C) 2015 AIP Publishing LLC.
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Naturally formed CdTe/CdS core/shell quantum dot (QD) structures in the presence of surface stabilizing agents have been synthesized by a hydrothermal method. Size and temperature dependent photoluminescence (PL) spectra have been investigated to understand the exciton-phonon interaction, and radiative and nonradiative relaxation of carriers in these QDs. The PL of these aqueous CdTe QDs (3.0-4.8 nm) has been studied in the temperature range 15-300 K. The strength of the exciton-LO-phonon coupling, as reflected in the Huang-Rhys parameter `S' is found to increase from 1.13 to 1.51 with the QD size varying from 4.8 to 3.0 nm. The PL linewidth (FWHM) increases with increase in temperature and is found to have a maximum in the case of QDs of 3.0 nm in size, where the exciton-acoustic phonon coupling coefficient is enhanced to 51 mu eV K-1, compared to the bulk value of 0.72 mu eV K-1. To understand the nonradiative processes, which affect the relaxation of carriers, the integrated PL intensity is observed as a function of temperature. The integrated PL intensity remains constant until 50 K for relatively large QDs (3.9-4.8 nm) beyond which a thermally activated process takes over. Below 150 K, a small activation energy, 45-19 meV, is found to be responsible for the quenching of the PL. Above 150 K, the thermal escape from the dot assisted by scattering with multiple longitudinal optical (LO) phonons is the main mechanism for the fast quenching of the PL. Besides this high temperature quenching, interestingly for relatively smaller size QDs (3.4-3.0 nm), the PL intensity enhances as the temperature increases up to 90-130 K, which is attributed to the emission of carriers from interface/trap states having an activation energy in the range of 6-13 meV.
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We present an efficient photorefractive volume hologram recording technique with a pulsed signal beam and continuous reference-beam illumination. The grating envelope can be simply controlled by manipulation of the duty cycle of the signal beam. Thus, for any grating coupling strength and different initial reference-signal intensity ratios, the diffraction efficiency can be maximized with this technique and can be greatly increased in comparison with that of the conventional recording technique. (C) 1998 Optical Society of America.
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In the first part of this thesis a study of the effect of the longitudinal distribution of optical intensity and electron density on the static and dynamic behavior of semiconductor lasers is performed. A static model for above threshold operation of a single mode laser, consisting of multiple active and passive sections, is developed by calculating the longitudinal optical intensity distribution and electron density distribution in a self-consistent manner. Feedback from an index and gain Bragg grating is included, as well as feedback from discrete reflections at interfaces and facets. Longitudinal spatial holeburning is analyzed by including the dependence of the gain and the refractive index on the electron density. The mechanisms of spatial holeburning in quarter wave shifted DFB lasers are analyzed. A new laser structure with a uniform optical intensity distribution is introduced and an implementation is simulated, resulting in a large reduction of the longitudinal spatial holeburning effect.
A dynamic small-signal model is then developed by including the optical intensity and electron density distribution, as well as the dependence of the grating coupling coefficients on the electron density. Expressions are derived for the intensity and frequency noise spectrum, the spontaneous emission rate into the lasing mode, the linewidth enhancement factor, and the AM and FM modulation response. Different chirp components are identified in the FM response, and a new adiabatic chirp component is discovered. This new adiabatic chirp component is caused by the nonuniform longitudinal distributions, and is found to dominate at low frequencies. Distributed feedback lasers with partial gain coupling are analyzed, and it is shown how the dependence of the grating coupling coefficients on the electron density can result in an enhancement of the differential gain with an associated enhancement in modulation bandwidth and a reduction in chirp.
In the second part, spectral characteristics of passively mode-locked two-section multiple quantum well laser coupled to an external cavity are studied. Broad-band wavelength tuning using an external grating is demonstrated for the first time in passively mode-locked semiconductor lasers. A record tuning range of 26 nm is measured, with pulse widths of typically a few picosecond and time-bandwidth products of more than 10 times the transform limit. It is then demonstrated that these large time-bandwidth products are due to a strong linear upchirp, by performing pulse compression by a factor of 15 to a record pulse widths as low 320 fs.
A model for pulse propagation through a saturable medium with self-phase-modulation, due to the a-parameter, is developed for quantum well material, including the frequency dependence of the gain medium. This model is used to simulate two-section devices coupled to an external cavity. When no self-phase-modulation is present, it is found that the pulses are asymmetric with a sharper rising edge, that the pulse tails have an exponential behavior, and that the transform limit is 0.3. Inclusion of self-phase-modulation results in a linear upchirp imprinted on the pulse after each round-trip. This linear upchirp is due to a combination of self-phase-modulation in a gain section and absorption of the leading edge of the pulse in the saturable absorber.
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A novel second-order polarization-independent filter made of a single ring resonator and a Sagnac interferometer (SRRSI) is proposed, and its filtering characteristics are investigated. By using birefringence in waveguide, a single ring resonator can be used to synthesize a filter with second-order response. Analytical formulas are derived for characteristics of the SRRSI varied with waveguide parameters.. such as the coupling coefficient; and the critical condition of a second-order Butterworth filter is given. The influence of loss in the ring resonator is also analyzed. (c) 2005 Elsevier B.V. All rights reserved.
Resumo:
将掺铒有源波导材料引入环形谐振腔结构,从理论上分析了有源波导环形谐振腔的滤波特性。结果表明由于抽运光提供的增益补偿了腔内损耗,使得环形谐振腔满足临界耦合条件,实现对信号光的最佳陷波,同时发现通过改变抽运光功率,可以对精细度和带宽进行动态调谐。分析了铒离子掺杂浓度、信号光功率以及抽运光耦合系数对最佳陷波抽运功率的影响,为有源波导器件设计制作提供了理论依据。
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针对激光惯性约束聚变实验研究对高功率激光驱动器前端系统复杂时间形状种子激光脉冲的需求, 应用孔径耦合带状线集成波导整形系统设计了满足需要的前端整形激光脉冲。用一种新方法精确计算了孔径耦合带状线电脉冲整形器的耦合系数和孔径宽度的数值关系, 并针对高衬比度整形激光脉冲的需求, 提出了高衬比度双极型集成波导整形系统方案。由该系统可以得到100 ps脉冲前沿、1~3 ns脉冲宽度可调、高衬比度(大于100∶1)、光滑无纹波调制、可精确满足神光II八路及第九路装置需求的前端整形激光脉冲。
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Self-biased Terfenol-D 2-2 composites exhibit high frequency of actuation and good magnetomechanical properties; however, their potential usefulness is highly dependent on their magnetoacoustic properties, particularly for ultrasonic applications. The speed of sound, c, and its variation with an externally applied magnetic field have been measured for the above composites using a 10 MHz longitudinal pulse. When the sound propagates parallel to the layers, the acoustic impedance was found to be independent of the external applied field, and lower than that for bulk Terfenol-D. The magnetomechanical coupling coefficient was found to be generally low (up to 0.35) and dependent on the volume ratio of materials, being higher for the specimens with greater content of Terfenol-D. The low attenuation, low acoustic impedance, and high frequency of actuation make this structure an interesting alternative for use in underwatersound navigation and ranging and other ultrasonic applications. When the pulse propagates orthogonal to the layers, c was found to vary by up to 3% with the application of an external field, but the acoustic attenuation was found to be very high due to the multiple reflections produced at the interfaces between the layers. This latter phenomenon has been calculated theoretically. © 2007 American Institute of Physics.
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Nanocrystalline ZnO films with strong (0002) texture and fine grains were deposited onto ultra-nanocrystalline diamond (UNCD) layers on silicon using high target utilization sputtering technology. The unique characteristic of this sputtering technique allows room temperature growth of smooth ZnO films with a low roughness and low stress at high growth rates. Surface acoustic wave (SAW) devices were fabricated on ZnO/UNCD structure and exhibited good transmission signals with a low insertion loss and a strong side-lobe suppression for the Rayleigh mode SAW. Based on the optimization of the layered structure of the SAW device, a good performance with a coupling coefficient of 5.2% has been realized, promising for improving the microfluidic efficiency in droplet transportation comparing with that of the ZnO/Si SAW device. An optimized temperature coefficient of frequency of -23.4 ppm°C-1 was obtained for the SAW devices with the 2.72 μm-thick ZnO and 1.1 μm-thick UNCD film. Significant thermal effect due to the acoustic heating has been redcued which is related to the temperature stability of the ZnO/UNCD SAW device. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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We present a novel vertically-coupled active-passive integration architecture that provides an order of magnitude reduction in coupling coefficient variation between misaligned waveguides when compared with a conventional vertically-coupled structure. © 2005 Optical Society of America.
Resumo:
We present a novel vertically-coupled active-passive integration architecture that provides an order of magnitude reduction in coupling coefficient variation between misaligned waveguides when compared with a conventional vertically-coupled structure. © 2005 Optical Society of America.
Resumo:
We present a novel vertically-coupled active-passive integration architecture that provides an order of magnitude reduction in coupling coefficient variation between misaligned waveguides when compared with a conventional vertically-coupled structure. © 2005 Optical Society of America.