AN ORGANIC-PHASE ENZYME ELECTRODE BASED ON AN APPARENT DIRECT ELECTRON-TRANSFER BETWEEN A GRAPHITE ELECTRODE AND IMMOBILIZED HORSERADISH-PEROXIDASE

A mediatorless horseradish peroxidase (HRP) enzyme electrode operated in nonaqueous media is constructed by cryohydrogel immobilization.

ORGANIC-PHASE ENZYME ELECTRODE OPERATED IN WATER-FREE SOLVENTS

A new material, polyhydroxyl cellulose, and a refrigerating immobilization method were used to construct HRP-mediator electrode for determination of hydrogen peroxide in water-free organic solvents. Rapid and sensitive response was obtained. The enzyme el

Discotic materials for organic electronics

Die Kontrolle der ausgeprägten Aggregationsfähigkeit von alkylsubstituierten Hexa-peri-hexabenzocoronenen (HBC) wurde durch die Reduktion der intermolekularen Wechselwirkungen erreicht. Sterisch anspruchsvolle, verzweigte Alkylketten, mit einem Verzweigungspunkt naher des aromatischen Kerns, wurden in die Corona der aromatischen Scheiben eingebracht und verleihen den Derivaten Schmelzbarkeit ohne thermische Zersetzung. Dies erlaubte eine kostengünstige Verarbeitungstechniken direkt aus der Schmelze wie z.B. Zonenschmelzen, um uniaxial organisierte makroskopische Filme zu erhalten. Abhängig von dem sterischen Anspruch, der durch die Seitenkette erzeugt wird, wurden unterschiedliche molekulare Orientierungen auf Oberflächen erhalten, was eine wichtige Voraussetzung ist, um diskotische Materialien in elektronische Bauteile zu implementieren. Eine weitere Voraussetzung sind hohe Ladungsträgerbeweglichkeiten und Ladungsträgerlebenszeiten in den Halbleitermaterialien, die mit time-resolved pulse-radiolysis microwave conductivity (TR-PRMC) und time-of-flight (TOF) auch für die synthetisieren Materialien bestimmt wurden. Die neuen Materialien zeigten bereits in organischen Solarzellen gute Leistungen. Den Einfluss des Perimeters auf die elektronischen Eigenschaften der polyzyklischen aromatischen Kohlenwasserstoffe (PAKs) wurde theoretisch vorhergesagt und in dieser Arbeit durch die Synthese einer homologe Serie von PAKs experimentell bestätigt. Geht man von der „arm-chair“ Peripherie des HBC sukzessive zu einer partiellen „zickzack“ Peripherie, so findet man eine Abhängigkeit der elektronischen Banden von Symmetrie und Größe des aromatischen Systems. Die spontan ausgebildete Überstruktur dieser Derivate zeigte eine Abhängigkeit von Substitutionsmuster und der Natur der Alkylketten. Zusammenfassend wurden neben der Synthese von neuartigen Materialien für den Einsatz in der organischen Elektronik Synthesen entwickelt, die eine vereinfachte Funktionalisierung von ausgedehnten PAKs ermöglicht. Diese Konzepte erlauben eine Justierung der molekularen und supramolekularen Eigenschaften, eines der wichtigsten Voraussetzungen für den Einsatz von Materialien in elektronischen Bauelementen.

Extended donor and acceptor molecules for organic electronics

Die Untersuchung von halbleitenden Materialien auf der Basis von organischen Molekülen stellt ein Gebiet der angewandten Forschung an der Schwelle zur industriellen Nutzung dar. Geringes Gewicht und hohe mechanische Flexibilität ermöglichen völlig neue Produkte, die mit anorganischen Halbleitern nicht zu realisieren sind. Die Herstellung von Bauteilen wie Transistoren, Solarzellen oder Leuchtdioden aus organischen Materialien ist ein komplexes Gebiet, das einer Vielzahl von unterschiedlichen Optimierungen bedarf, um eine konkurrenzfähige Leistung zu erreichen. Die synthetische organische Chemie bietet vielfältige Möglichkeiten, mit maßgeschneiderten Lösungen zum Optimierungsprozess beizutragen. Zum einen können neue aktive Materialien hergestellt werden mit besserer Leistung und leichterer Verarbeitbarkeit. Zum anderen sind Substanzen zugänglich, die z.B. bei der Ladungsträgerinjektion hilfreich sein können.rnIn dieser Arbeit wurde an beiden dieser Fronten gearbeitet. Dabei lag die Entwicklungsstrategie darin, ausgedehnte π-konjugierte Moleküle herzustellen, die entweder besonders elektronenarme Akzeptoren oder elektronenreiche Donoren darstellen. Die genaue Kontrolle der elektronischen Niveaus stellt einen wichtigen Bestandteil dar, um niedrige elektrische Kontaktbarrieren zu Metallen zu erreichen und ausreichend stabile Materialien zu erreichen.rnDer erste Fokus der Arbeiten lag in der Funktionalisierung von Coronen. Dieser PAH stellt einen guten Kompromiss bezüglich seiner Größe dar: Er ist groß genug, um Diffusion in andere Schichten von Bauteilen zu vermeiden, aber nicht zu groß, um Verarbeitung durch Vakuumsublimation zu ermöglichen. Bislang sind praktisch keine Coronen-Derivate in der Literatur beschrieben, weshalb eine neue Synthese entwickelt werden musste, die die Einführung starker Donor- und Akzeptorfunktionalitäten erlaubt. Die photochemische Cyclodehydrierung von substituierten [2.2.2]paracyclophan-trienen stellte sich als hervorragende Möglichkeit heraus, dies zu bewerkstelligen. Es wurde eine Reihe von methoxy-substitutierten Coronenen mit unterschiedlicher Symmetrie hergestellt. Mittels optischer Spektroskopie konnte gezeigt werden, dass Methoxygruppen wenig Einfluss auf die elektronischen Eigenschaften von Coronen haben. Unter Spaltung der Methylether und anschließender Oxidation allerdings sind Coronenketone zugänglich, welche bis zu drei α-Diketongruppen besitzen. Diese Moleküle sind enorm starke Akzeptoren, was durch Cyclovoltammetrie und Vergleich zu anderen Akzeptoren eindrucksvoll gezeigt werden konnte. Die Sublimation dieses Akzeptors auf die Oberfläche von Metallen zeigt einen dramatischen Einfluss auf die Austrittsarbeit dieses Metalls, was zur Herstellung eines ohmschen Kontakts zu organischen Halbleitern von außerordentlichem Nutzen ist. rnDen zweiten Teil der Arbeit bilden Benzodithiophen enthaltende Polymere, die für den Einsatz als aktive Komponente in elektronischen Bauteilen entwickelt wurden. Nach systematischer Strukturoptimierung wurde ein Polymer enthalten, welches in einem Feldeffekt-Transistor auf Standard-Silizium-Substraten Ladungsträger-Mobilitäten über 0,1 cm2/Vs erreicht mit großer Reproduzierbarkeit und ausgezeichneter Transistor-Charakteristik. Es konnte gezeigt werden, dass die durch die Monomergeometrie erzeugte Kurvung des Polymers zu einem optimalen Kompromiss aus Löslichkeit und effektiver Packung darstellt. Auf für industrielle Anwendungen besonders interessanten polymer-basierten Substraten wurde eine noch erheblich bessere Leistung gezeigt. Auf einem PET-Substrat wurden Feldeffekt-Mobilitäten von 0,5 cm2/Vs gemessen mit überzeugenden Reproduzierbarkeit und Stabilität.rnDamit konnte in der Arbeit ein bedeutender Beitrag zur Weiterentwicklung von Materialien für den Einsatz in elektronischen Bauteilen geleistet werden. Die Substanzen versprechen noch erhebliches Potenzial nach intensiver Optimierung und wurden deshalb zum Patent angemeldet.rn

Triphenylene-based polymers for organic electronics

An efficient synthesis has been developed toward a novel series of conjugated blue emitting polymers containing triphenylene as repeating unit for polymer light emitting diodes (PLEDs). Soluble triphenylene-based co- and homo-polymers have been synthesized by the palladium-catalyzed Suzuki-Miyaura and the nickel-catalysed Yamamoto polycondensation reactions, respectively. The photophysical properties as well as the application of the polymers in PLED devices are presented here.rnIn addition a simple GNR fabrication method that allows for the production of atomically precise GNRs of different topologies and widths is introduced. This bottom-up approach consists in the surface-assisted coupling of suitably designed molecular triphenylene precursors into linear polyphenylenes and their subsequent cyclodehydrogenation and results in GNRs whose topology, width and edge periphery are defined by the precursor monomers. Various types of atomically precise GNRs thus eventually become available for experimental investigation and exploitation of their many predicted and technologically highly interesting properties. Furthermore, it is anticipated that this bottom-up approach of GNR fabrication will allow the engineering of chemical and electronic properties and the yet elusive realization of theoretically predicted structures such as intraribbon quantum dots, superlattice structures, or magnetic devices based on specific GNR edge states.rn

Directed Metalation Cascade To Access Highly Functionalized Thieno2,3-fbenzofuran and Exploration as Building Blocks for Organic Electronics

A tandem directed metalation has been successfully applied to the preparation of thieno2,3-fbenzofuran-4,8-dione, providing an efficient and facile approach to symmetrically and unsymmetrically functionalize the thieno2,3-fbenzofuran core at the 2,6 positions as well as to introduce the electron-withdrawing or -donating groups (EWG or EDG) at its 4,8 positions. The presence of various functional groups makes late-stage derivatization attainable.

Enhanced zinc oxide and graphene nanostructures for electronics and sensing applications

Zinc oxide and graphene nanostructures are important technological materials because of their unique properties and potential applications in future generation of electronic and sensing devices. This dissertation investigates a brief account of the strategies to grow zinc oxide nanostructures (thin film and nanowire) and graphene, and their applications as enhanced field effect transistors, chemical sensors and transparent flexible electrodes. Nanostructured zinc oxide (ZnO) and low-gallium doped zinc oxide (GZO) thin films were synthesized by a magnetron sputtering process. Zinc oxide nanowires (ZNWs) were grown by a chemical vapor deposition method. Field effect transistors (FETs) of ZnO and GZO thin films and ZNWs were fabricated by standard photo and electron beam lithography processes. Electrical characteristics of these devices were investigated by nondestructive surface cleaning, ultraviolet irradiation treatment at high temperature and under vacuum. GZO thin film transistors showed a mobility of ∼5.7 cm2/V·s at low operation voltage of <5 V and a low turn-on voltage of ∼0.5 V with a sub threshold swing of ∼85 mV/decade. Bottom gated FET fabricated from ZNWs exhibit a very high on-to-off ratio (∼106) and mobility (∼28 cm2/V·s). A bottom gated FET showed large hysteresis of ∼5.0 to 8.0 V which was significantly reduced to ∼1.0 V by the surface treatment process. The results demonstrate charge transport in ZnO nanostructures strongly depends on its surface environmental conditions and can be explained by formation of depletion layer at the surface by various surface states. A nitric oxide (NO) gas sensor using single ZNW, functionalized with Cr nanoparticles was developed. The sensor exhibited average sensitivity of ∼46% and a minimum detection limit of ∼1.5 ppm for NO gas. The sensor also is selective towards NO gas as demonstrated by a cross sensitivity test with N2, CO and CO2 gases. Graphene film on copper foil was synthesized by chemical vapor deposition method. A hot press lamination process was developed for transferring graphene film to flexible polymer substrate. The graphene/polymer film exhibited a high quality, flexible transparent conductive structure with unique electrical-mechanical properties; ∼88.80% light transmittance and ∼1.1742Ω/sq k sheet resistance. The application of a graphene/polymer film as a flexible and transparent electrode for field emission displays was demonstrated.

Electrochemically exfoliated graphene for electrode films : effect of graphene flake thickness on the sheet resistance and capacitive properties

We present an electrochemical exfoliation method to produce controlled thickness graphene flakes by ultrasound assistance. Bilayer graphene flakes are dominant in the final product by using sonication during the electrochemical exfoliation process, while without sonication the product contains a larger percentage of four-layer graphene flakes. Graphene sheets prepared by using the two procedures are processed into films to measure their respective sheet resistance and optical transmittance. Solid-state electrolyte supercapacitors are made using the two types of graphene films. Our study reveals that films with a higher content of multilayer graphene flakes are more conductive, and their resistance is more easily reduced by thermal annealing, making them suitable as transparent conducting films. The film with higher content of bilayer graphene flakes shows instead higher capacitance when used as electrode in a supercapacitor.

Flexible Ag electrode for use in organic photovoltaics

High efficiency organic photovoltaic cells discussed in literature are normally restricted to devices fabricated on glass substrates. This is a consequence of the extreme brittleness and inflexibility of the commonly used transparent conductive oxide electrode, indium tin oxide (ITO). This shortcoming of ITO along with other concerns such as increasing scarcity of indium, migration of indium to organic layer, etc. makes it imperative to move away from ITO. Here we demonstrate a highly flexible Ag electrode that possesses low sheet resistances even in ultra-thin layers. It retains its conductivity under severe bending stresses where ITO fails completely. A P3HT:PCBM blend organic solar cell fabricated on this highly flexible electrode gives an efficiency of 2.3%.

Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes

A noncatalytic chemical vapor deposition mechanism is proposed, where high precursor concentration, long deposition time, high temperature, and flat substrate are needed to grow large-area nanocrystalline graphene using hydrocarbon pyrolysis. The graphene is scalable, uniform, and with controlled thickness. It can be deposited on virtually any nonmetallic substrate that withstands ∼1000 °C. For typical examples, graphene grown directly on quartz and sapphire shows transmittance and conductivity similar to exfoliated or metal-catalyzed graphene, as evidenced by transmission spectroscopy and transport measurements. Raman spectroscopy confirms the sp 2-C structure. The model and results demonstrate a promising transfer-free technique for transparent electrode production. © 2012 American Institute of Physics.

Highly electron transparent Graphene for field emission triode gates

The enhanced emission performance of a graphene/Mo hybrid gate electrode integrated into a nanocarbon field emission micro-triode electron source is presented. Highly electron transparent gate electrodes are fabricated from chemical vapor deposited bilayer graphene transferred to Mo grids with experimental and simulated data, showing that liberated electrons efficiently traverse multi-layer graphene membranes with transparencies in excess of 50-68%. The graphene hybrid gates are shown to reduce the gate driving voltage by 1.1 kV, whilst increasing the electron transmission efficiency of the gate electrode significantly. Integrated intensity maps show that the electron beam angular dispersion is dramatically improved (87.9°) coupled with a 63% reduction in beam diameter. Impressive temporal stability is noted (<1.0%) with surprising negligible long-term damage to the graphene. A 34% increase in triode perveance and an amplification factor 7.6 times that of conventional refractory metal grid gate electrode-based triodes are noted, thus demonstrating the excellent stability and suitability of graphene gates in micro-triode electron sources. A nanocarbon field emission triode with a hybrid gate electrode is developed. The graphene/Mo gate shows a high electron transparency (50-68%) which results in a reduced turn-on potential, increased beam collimation, reduced beam diameter (63%), enhanced stability (<1% variation), a 34% increase in perveance, and an amplification 7.6 times that of equivalent conventional refractory metal gate triodes. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator

Organic thin-film transistors (OTFTs) using high dielectric constant material tantalum pentoxide (Ta2O5) and benzocyclobutenone (BCBO) derivatives as double-layer insulator were fabricated. Three metals with different work function, including Al (4.3 eV), Cr (4.5 eV) and Au (5.1 eV), were employed as gate electrodes to study the correlation between work function of gate metals and hysteresis characteristics of OTFTs. The devices with low work function metal Al or Cr as gate electrode exhibited high hysteresis (about 2.5 V threshold voltage shift). However, low hysteresis (about 0.7 V threshold voltage shift) OTFTs were attained based on high work function metal Au as gate electrode.

Oxide Semiconductors For Organic Opto-electronic Devices

Development of transparent oxide semiconductors (TOS) from Earth-abundant materials is of great interest for cost-effective thin film device applications, such as solar cells, light emitting diodes (LEDs), touch-sensitive displays, electronic paper, and transparent thin film transistors. The need of inexpensive or high performance electrode might be even greater for organic photovoltaic (OPV), with the goal to harvest renewable energy with inexpensive, lightweight, and cost competitive materials. The natural abundance of zinc and the wide bandgap ($sim$3.3 eV) of its oxide make it an ideal candidate. In this dissertation, I have introduced various concepts on the modulations of various surface, interface and bulk opto-electronic properties of ZnO based semiconductor for charge transport, charge selectivity and optimal device performance. I have categorized transparent semiconductors into two sub groups depending upon their role in a device. Electrodes, usually 200 to 500 nm thick, optimized for good transparency and transporting the charges to the external circuit. Here, the electrical conductivity in parallel direction to thin film, i.e bulk conductivity is important. And contacts, usually 5 to 50 nm thick, are optimized in case of solar cells for providing charge selectivity and asymmetry to manipulate the built in field inside the device for charge separation and collection. Whereas in Organic LEDs (OLEDs), contacts provide optimum energy level alignment at organic oxide interface for improved charge injections. For an optimal solar cell performance, transparent electrodes are designed with maximum transparency in the region of interest to maximize the light to pass through to the absorber layer for photo-generation, plus they are designed for minimum sheet resistance for efficient charge collection and transport. As such there is need for material with high conductivity and transparency. Doping ZnO with some common elements such as B, Al, Ga, In, Ge, Si, and F result in n-type doping with increase in carriers resulting in high conductivity electrode, with better or comparable opto-electronic properties compared to current industry-standard indium tin oxide (ITO). Furthermore, improvement in mobility due to improvement on crystallographic structure also provide alternative path for high conductivity ZnO TCOs. Implementing these two aspects, various studies were done on gallium doped zinc oxide (GZO) transparent electrode, a very promising indium free electrode. The dynamics of the superimposed RF and DC power sputtering was utilized to improve the microstructure during the thin films growth, resulting in GZO electrode with conductivity greater than 4000 S/cm and transparency greater than 90 %. Similarly, various studies on research and development of Indium Zinc Tin Oxide and Indium Zinc Oxide thin films which can be applied to flexible substrates for next generation solar cells application is presented. In these new TCO systems, understanding the role of crystallographic structure ranging from poly-crystalline to amorphous phase and the influence on the charge transport and optical transparency as well as important surface passivation and surface charge transport properties. Implementation of these electrode based on ZnO on opto-electronics devices such as OLED and OPV is complicated due to chemical interaction over time with the organic layer or with ambient. The problem of inefficient charge collection/injection due to poor understanding of interface and/or bulk property of oxide electrode exists at several oxide-organic interfaces. The surface conductivity, the work function, the formation of dipoles and the band-bending at the interfacial sites can positively or negatively impact the device performance. Detailed characterization of the surface composition both before and after various chemicals treatment of various oxide electrode can therefore provide insight into optimization of device performance. Some of the work related to controlling the interfacial chemistry associated with charge transport of transparent electrodes are discussed. Thus, the role of various pre-treatment on poly-crystalline GZO electrode and amorphous indium zinc oxide (IZO) electrode is compared and contrasted. From the study, we have found that removal of defects and self passivating defects caused by accumulation of hydroxides in the surface of both poly-crystalline GZO and amorphous IZO, are critical for improving the surface conductivity and charge transport. Further insight on how these insulating and self-passivating defects cause charge accumulation and recombination in an device is discussed. With recent rapid development of bulk-heterojunction organic photovoltaics active materials, devices employing ZnO and ZnO based electrode provide air stable and cost-competitive alternatives to traditional inorganic photovoltaics. The organic light emitting diodes (OLEDs) have already been commercialized, thus to follow in the footsteps of this technology, OPV devices need further improvement in power conversion efficiency and stable materials resulting in long device lifetimes. Use of low work function metals such as Ca/Al in standard geometry do provide good electrode for electron collection, but serious problems using low work-function metal electrodes originates from the formation of non-conductive metal oxide due to oxidation resulting in rapid device failure. Hence, using low work-function, air stable, conductive metal oxides such as ZnO as electrons collecting electrode and high work-function, air stable metals such as silver for harvesting holes, has been on the rise. Devices with degenerately doped ZnO functioning as transparent conductive electrode, or as charge selective layer in a polymer/fullerene based heterojunction, present useful device structures for investigating the functional mechanisms within OPV devices and a possible pathway towards improved air-stable high efficiency devices. Furthermore, analysis of the physical properties of the ZnO layers with varying thickness, crystallographic structure, surface chemistry and grain size deposited via various techniques such as atomic layer deposition, sputtering and solution-processed ZnO with their respective OPV device performance is discussed. We find similarity and differences in electrode property for good charge injection in OLEDs and good charge collection in OPV devices very insightful in understanding physics behind device failures and successes. In general, self-passivating surface of amorphous TCOs IZO, ZTO and IZTO forms insulating layer that hinders the charge collection. Similarly, we find modulation of the carrier concentration and the mobility in electron transport layer, namely zinc oxide thin films, very important for optimizing device performance.

Plasmonic effect of gold nanoparticles in organic solar cells

Light trapping, due to the embedding of metallic nanoparticles, has been shown to be beneficial for a better photoabsorption in organic solar cells. Researchers in plasmonics and in the organic photovoltaics fields are working together to improve the absorption of sunlight and the photon–electron coupling to boost the performance of the devices. Recent advances in the field of plasmonics for organic solar cells focus on the incorporation of gold nanoparticles. This article reviews the different methods to produce and embed gold nanoparticles into organic solar cells. In particular, concentration, size and geometry of gold nanoparticles are key factors that directly influence the light absorption in the devices. It is shown that a careful choice of size, concentration and location of gold nanoparticles in the device result in an enhancement of the power conversion efficiencies when compared to standard organic solar cell devices. Our latest results on gold nanoparticles embedded in on organic solar cell devices are included. We demonstrate that embedded gold nanoparticles, created by depositing and annealing a gold film on transparent electrode, generate a plasmonic effect which can be exploited to increase the power conversion efficiency of a bulk heterojunction solar cell up to 10%.