Análises morfológicas e moleculares dos gêneros Galium L.e Relbunium (Endl.)Hook.f. (RUbieae-Rubiaceae)no estado do Rio Grande do Sul-Brasil

Desde o início da história taxonômica de Relbunium, muitos foram os trabalhos que enfatizaram sua autonomia e posição taxonômica. Atualmente, alguns estudos sugerem que as espécies pertencentes a Relbunium devam ser incluídas em uma seção do gênero Galium. Porém, recentes estudos moleculares na tribo Rubieae, destacam Galium como um grupo parafilético, e Relbunium como um gênero independente e monofilético. O problema taxonômico referente a Galium e Relbunium é de difícil solução, devido à ausência de estudos que integrem caracteres morfológicos, ecológicos e moleculares. No presente trabalho objetivou-se adicionar informações para o conhecimento básico das espécies de Relbunium e Galium para o sul do Brasil, a partir de caracteres morfológicos e moleculares, buscando responder a seguinte questão: “Relbunium pode ser considerado um gênero ou apenas uma seção dentro de Galium?”. Para atingir os objetivos, foi analisada a morfologia das espécies, com ênfase nas folhas, flores e frutos para duas espécies de Galium e treze de Relbunium: G. latoramosum, G. uruguayense, R. equisetoides, R. gracillimum, R. hirtum, R. humile, R. humilioides, R. hypocarpium, R. longipedunculatum, R. mazocarpum, R. megapotamicum, R. nigro-ramosum, R. ostenianum, R. richardianum e R. valantioides. Chaves de identificação foram geradas a partir dos resultados das análises morfológicas. As folhas foram analisadas quanto à forma, ápice, padrão de venação, tricomas, estômatos, distribuição de idioblastos secretores e vascularização do hidatódio. Esses caracteres não evidenciaram a separação entre os gêneros, auxiliando apenas na individualização das espécies. A morfologia das flores e frutos auxiliou na diferenciação dos gêneros e espécies estudadas. As flores são comumente bispóricas, a exceção de G. latoramosum. Brácteas involucrais, ausentes em Galium, estão presentes nas espécies de Relbunium, de duas a quatro; nesse gênero há presença de antopódio, ausente em Galium. A corola possui tricomas glandulares unicelulares na face adaxial, e na face abaxial os tricomas, quando presentes, são simples e idioblastos secretores estão presentes apenas em R. gracillimum. O androceu tem quatro estames alternipétalos e exsertos, com anteras dorsifixas e tetrasporangiadas, de deiscência longitudinal. O ovário é ínfero, bicarpelar, bilocular, com um rudimento seminal anátropo e unitegumentado por lóculo. O desenvolvimento dos frutos, a estrutura do pericarpo e da testa foram descritos. Os frutos são do tipo baga, em R. gracillimum e R. hypocarpium, ou esquizocarpo, nas demais espécies. A consistência do pericarpo pode variar de carnosa, nos frutos do tipo baga, a levemente seca, nos frutos esquizocarpos. Entre as espécies, observou-se uma variação com relação ao exocarpo, que pode ser liso, piloso ou com idioblastos secretores. A testa é constituída por apenas uma camada de células, que em R. hypocarpium mostra-se descontínua. Além das descrições morfológicas, foram realizados estudos moleculares das espécies, através do seqüenciamento de fragmentos do DNA nuclear (ITS) e plastidial (trnL-F). A partir dos resultados obtidos formam elaborados cladogramas com base nos dados morfológicos e moleculares. O cladograma construído a partir dos dados morfológicos (vegetativos e reprodutivos) evidenciou a distinção dos dois gêneros, ou seja, sustenta Relbunium como táxon independente. Nesse cladograma observa-se que a VI presença ou ausência de brácteas foi determinante, e proporcionou a separação dos gêneros. A uniformidade dos caracteres morfológicos vegetativos entre as espécies auxiliou apenas na distinção das espécies de Relbunium. Com relação aos dados moleculares, os fragmentos de DNA utilizados mostraram-se pouco informativos. A análise do fragmento ITS, em especial, contribuiu para confirmação da relação entre algumas espécies (R. hirtum e R. ostenianum, e R. humile e R. mazocarpum). A análise combinada dos dados morfológicos e moleculares não caracterizou Relbunium como um clado monofilético, sendo sua manutenção não sustentada, isso, principalmente, devido à falta de diferenças moleculares entre as espécies. Conclui-se que para o grupo em questão as análises morfológicas, das folhas, flores e frutos, foram suficientes para destacar Relbunium como um gênero autônomo e monofilético na tribo Rubieae.

Clinical evaluation of low-level laser therapy and fluoride varnish for treating cervical dentinal hypersensitivity

The aim of this study was to evaluate in vivo the use of low-level galium-aluminium-arsenide (GaAlAs) (BDP 600) laser and sodium fluoride varnish (Duraphat((R))) in the treatment of cervical dentine hypersensitivity. Twelve patients, with at least two sensitive teeth were selected. A total of 60 teeth were included in the trial. Prior to desensitizing treatment, dentine hypersensitivity was assessed by a thermal stimulus and patients' response to the examination was considered to be a control. The GaAlAs laser (15 mW, 4 J/cm(2)) was irradiated on contact mode and fluoride varnish was applied at cervical region. The efficiency of the treatments was assessed at three examination periods: immediately after first application, 15 and 30 days after the first application. The degree of sensitivity was determined following predefined criteria. Data were submitted to analysis and no statistically significant difference was observed between fluoride varnish and laser. Considering the treatments separately, there was no significant difference for the fluoride varnish at the three examination periods, and for laser therapy, significant difference (P < 0.05) was found solely between the values obtained before the treatment and 30 days after the first application. It may be concluded that both treatments may be effective in decreasing cervical dentinal hypersensitivity. Moreover, the low-level GaAlAs laser showed improved results for treating teeth with higher degree of sensitivity.

Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique

We investigate the effect of the hydrogen intentional incorporation on the structural properties of the amorphous gallium arsenide prepared by rf-magnetron sputtering technique. The properties of the non-hydrogenated films are: band gap of 1.4 eV (E-04), Urbach energy of 110 meV, stoichiometric composition ([As]/[Ga] = 0.50), and dark conductivity of about 3.2 x 10(-5) (Omega.cm)(-1). Hydrogen was incorporated in the films by the introduction of an electronically controlled H-2 flux during deposition, keeping constant the other deposition parameters. It was observed that small hydrogen incorporation produces a great change in the structural properties of the films. The main changes result from the formation of GaAs nanocrystals with mean sizes of about 7 nm into the amorphous network.

Low temperature annealing of amorphous gallium arsenide films

This work reports the changes in the optical properties produced by annealing of amorphous GaAs at temperatures smaller than or just sufficient to produce crystallization of the material. The films were grown by the flash evaporation technique on glass substrates at room temperature. Optical and structural changes of our samples were monitored through photothermal deflection spectroscopy, optical transmittance and reflectance and X-ray diffraction (XRD). The structural results from XRD detected no crystallization of the films for temperatures up to 240 degreesC. We have observed consistent changes in the optical gap and Urbach energy of the annealed film. The optical gap increases with increasing annealing temperature from 1.17 to 1.32 eV. The Urbach energy decrease from 120 meV (as-grown film) to 105 meV (anneal at 200 degreesC). We propose that these changes are due to a diminution of the tail state defects and/or the relaxation of strained bonds. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Urbach energy parameter of flash evaporated amorphous gallium arsenide films

The dependence of the optical absorption edge on the deposition crucible temperature is used to investigate the electronic states in As-rich a-GaAs flash evaporated films. The Urbach energy parameter, determined from photothermal deflection spectroscopy (PDS), presents large correlated variations with crucible temperature. The optical and electrical results are consistent with the As under coordinated sites being the more important defect in the material. © 2002 Elsevier Science B.V. All rights reserved.

High final energy of low-level gallium arsenide laser therapy enhances skeletal muscle recovery without a positive effect on collagen remodeling

The aim of this study was to evaluate the effects of a Gallium Arsenide (GaAs) laser, using a high final energy of 4.8J, during muscle regeneration after cryoinjury. Thirty Wistar rats were divided into three groups: Control (C, n=10); Injured (I, n=10) and Injured and laser treated (Injured/LLLT, n=10). The cryoinjury was induced in the central region of the tibialis anterior muscle (TA). The applications of the laser (904nm, 50mW average power) were initiated 24h after injury, at energy density of 69Jcm(-1) for 48s, for 5days, to two points of the lesion. Twenty-four hours after the final application, the TA muscle was removed and frozen in liquid nitrogen to assess the general muscle morphology and the gene expression of TNF-, TGF-, MyoD, and Myogenin. The Injured/LLLT group presented a higher number of regenerating fibers and fewer degenerating fibers (P<0.05) without changes in the collagen remodeling. In addition, the Injured/LLLT group presented a significant decrease in the expression of TNF- and myogenin compared to the injured group (P<0.05). The results suggest that the GaAs laser, using a high final energy after cryoinjury, promotes muscle recovery without changing the collagen remodeling in the muscle extracellular matrix.

Orobanche caryophyllacea (auf Galium)

R. Anheisser

Thin films of gallium arsenide on low-cost substrates : final technical report for period July 5, 1976-December 5, 1978 /

"Work Performed Under Contract No. AC03-79ET20435."

Demand bibliography : gallium arsenide /

"Results from a search of the technical report database over a 10-year period ... references cover only unclassified, unlimited document references with abstracts."

Investigation of generation -recombination noise and related processes in aluminum gallium arsenide TEGFETs and Hall structures with quantum wells

Experimental and theoretical studies regarding noise processes in various kinds of AlGaAs/GaAs heterostructures with a quantum well are reported. The measurement processes, involving a Fast Fourier Transform and analog wave analyzer in the frequency range from 10 Hz to 1 MHz, a computerized data storage and processing system, and cryostat in the temperature range from 78 K to 300 K are described in detail. The current noise spectra are obtained with the “three-point method”, using a Quan-Tech and avalanche noise source for calibration. ^ The properties of both GaAs and AlGaAs materials and field effect transistors, based on the two-dimensional electron gas in the interface quantum well, are discussed. Extensive measurements are performed in three types of heterostructures, viz., Hall structures with a large spacer layer, modulation-doped non-gated FETs, and more standard gated FETs; all structures are grown by MBE techniques. ^ The Hall structures show Lorentzian generation-recombination noise spectra with near temperature independent relaxation times. This noise is attributed to g-r processes in the 2D electron gas. For the TEGFET structures, we observe several Lorentzian g-r noise components which have strongly temperature dependent relaxation times. This noise is attributed to trapping processes in the doped AlGaAs layer. The trap level energies are determined from an Arrhenius plot of log (τT2) versus 1/T as well as from the plateau values. The theory to interpret these measurements and to extract the defect level data is reviewed and further developed. Good agreement with the data is found for all reported devices. ^

Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications

Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems. III-V semiconductors and their alloys hold a distinct advantage over silicon because they have much higher electron mobility which is a prerequisite for high frequency operation. InGaAs/InP pseudomorphic heterojunction bipolar transistors (HBTs) have demonstrated fT of 765 GHz at room temperature and InP based high electron mobility transistors (HEMTs) have demonstrated fMax of 1.2 THz. The 6.1 A lattice family of InAs, GaSb, AlSb covers a wide variety of band gaps and is an attractive future material system for high speed device development. Extremely high electron mobilities ~ 30,000 cm^2 V^-1s^-1 have been achieved in modulation doped InAs-AlSb structures. The work described in this thesis involves material characterization and process development for HEMT fabrication on this material system.

Low temperature magneto-photoluminescence characterization of high purity gallium arsenide and indium phosphide

Low-temperature magneto-photoluminescence is a very powerful technique to characterize high purity GaAs and InP grown by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding energy differences of acceptors in GaAs and InP make possible the identification of those impurities by low-temperature photoluminescence without the use of any magnetic field. However, the sensitivity and resolution provided by this technique rema1ns inadequate to resolve the minute binding energy differences of donors in GaAs and InP. To achieve higher sensitivity and resolution needed for the identification of donors, a magneto-photoluminescence system 1s installed along with a tunable dye laser, which provides resonant excitation. Donors 1n high purity GaAs are identified from the magnetic splittings of "two-electron" satellites of donor bound exciton transitions 1n a high magnetic field and at liquid helium temperature. This technique 1s successfully used to identify donors 1n n-type GaAs as well as 1n p-type GaAs in which donors cannot be identified by any other technique. The technique is also employed to identify donors in high purity InP. The amphoteric incorporation of Si and Ge impurities as donors and acceptors in (100), (311)A and (3ll)B GaAs grown by molecular beam epitaxy is studied spectroscopically. The hydrogen passivation of C acceptors in high purity GaAs grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) 1s investigated using photoluminescence. Si acceptors ~n MBE GaAs are also found to be passivated by hydrogenation. The instabilities in the passivation of acceptor impurities are observed for the exposure of those samples to light. Very high purity MOCVD InP samples with extremely high mobility are characterized by both electrical and optical techniques. It is determined that C is not typically incorporated as a residual acceptor ~n high purity MOCVD InP. Finally, GaAs on Si, single quantum well, and multiple quantum well heterostructures, which are fabricated from III-V semiconductors, are also measured by low-temperature photoluminescence.

Identification and characterization of shallow impurity states in gallium arsenide and indium phosphide using photothermal ionization spectroscopy

A model of far infrared (FIR) dielectric response of shallow impurity states in a semiconductor has been developed and is presented for the specific case of the shallow donor transitions in high purity epitaxial GaAs. The model is quite general, however, and should be applicable with slight modification, not only to shallow donors in other materials such as InP, but also to shallow acceptors and excitons. The effects of the enormous dielectric response of shallow donors on the FIR optical properties of reflectance, transmittance, and absorptance, and photoconductive response of high purity epitaxial GaAs films are predicted and compared with experimental photothermal ionization spectra. The model accounts for many of the peculiar features that are frequently observed in these spectra, one of which was the cause of erroneous donor identifications in the early doping experiments. The model also corrects some commonly held misconceptions concerning photo-thermal ionization peak widths and amplitudes and their relationships to donor and acceptor concentrations. These corrections are of particular relevance to the proper interpretation of photothermal ionization spectra in the study of impurity incorporation in high purity epitaxial material. The model also suggests that the technique of FIR reflectance, although it has not been widely employed, should be useful in the study of shallow impurities in semiconductors.

The experimental determination of impact ionization coefficients in gallium arsenide and indium phosphide

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