光纤Fabry-Perot可调谐光滤波器的研究

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热光调谐平顶响应全介质Fabry-Perot 滤波器

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VCSEL 的电、热、光特性分析及微机械可调谐Fabry-Perot 光学滤波器的研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

注入锁定Fabry-Perot激光器的研究

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具有平顶输出响应的窄带Fabry-Perot滤波器

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平顶和陡峭带边响应的窄带热光调谐Fabry-Perot滤波器

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Enhanced modulation bandwidth of a Fabry-Perot semiconductor laser subject to light injection from another Fabry-Perot laser

Variations in optical spectrum and modulation band-width of a modulated Fabry-Perot (FP) semiconductor laser subject to the external light injection from another FP Laser is investigated in this paper. Optimal wavelength matching conditions for two FP lasers are discussed. A series of experiments show that two FP lasers should have a central wavelength overlapping and a mode spacing difference of several gigahertz. Under these conditions both the magnitude and phase frequency responses can be improved significantly.

Single mode operation of a Fabry-Perot laser locked by a tunable laser

In this article, the single mode operation of a Fabry-Perot laser (FP-LD) subject to the optical injection from a tunable laser is investigated. The maximum side mode suppression ratio (SMSR) is 53 dB, and the locked wavelength range is about 46 nm, which can cover 58 International Telecommunication Union (ITU) wavelengths with 100 GHz spacing or 115 ITU wavelengths with 50 GHz spacing for wavelength division multiplexing (WDM) system. In the wavelength range front 1535 to 1569 nm, the SMSR is over 46 dB, and the frequency response of the injection-locked FP-LD can be improved with the proper wavelength detuning. (c) 2008 Wiley Periodicals, Inc.

Injection locked Fabry-Perot laser diodes for WDM passive optical network spare function

In this paper, a protection scheme for transmitters in wavelength-division-multiplexing passive optical network (WDM-PON) has been proposed and demonstrated. If any downstream transmitter encounters problems at the central office (CO), the interrupted communication can be restored immediately by injecting a Fabry-Perot laser diode (FP-LD) with the upstream lightwave corresponding to the failure transmitter. Compared with the conventional methods, this proposed architecture provides a cost-effective and reliable protection scheme employing a common FP-LD. In the experiment, a 1 36 protection capability was implemented with a 2.5 Gbit/s downstream transmission capability. (C) 2009 Elsevier B.V. All rights reserved.

Fabry-Perot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure

We report on the fabrication of the nanowires with InGaAs/GaAs heterostructures on the GaAs(111) B substrate using selective-area metal organic vapor phase epitaxy. Fabry-Perot microcavity modes were observed in the nanowires with perfect end facets dispersed onto the silicon substrate and not observed in the free-standing nanowires. We find that the calculated group refractive indices only considering the material dispersion do not agree with the experimentally determined values although this method was used by some researchers. The calculated group refractive indices considering both the material dispersion and the waveguide dispersion agree with the experimentally determined values well. We also find that Fabry-Perot microcavity modes are not observable in the nanowires with the width less than about 180 nm, which is mainly caused by their poor reflectivity at the end facets due to their weak confinement to the optical field. (C) 2009 Optical Society of America

Fourier series expansion method for gain measurement from amplified spontaneous emission spectra of Fabry-Perot semiconductor lasers

A gain measurement technique, based on Fourier series expansion of periodically extended single fringe of the amplified spontaneous emission spectrum, is proposed for Fabry-Perot semiconductor lasers. The underestimation of gain due to the limited resolution of the measurement system is corrected by a factor related to the system response function. The standard deviations of the gain-reflectivity product under low noise conditions are analyzed for the Fourier series expansion method and compared with those of the Hakki-Paoli method and Cassidy's method. The results show that the Fourier series expansion method is the least sensitive to noise among the three methods. The experiment results obtained by the three methods are also presented and compared.

A new method of restraining the Fabry-Perot resonance

In the paper, we present a new method of restraining the Fabry-Perot resonance. The method is to combine dip angle with taper angle in the structure of the device and avoids the process of antireflection coatings. The experimental results show that restraining effect is apparent. A high threshold current has been obtained for the sample with both dip angle and taper angle structure. It provides a new method to make traveling-wave optical amplifiers.

Measurement of gain spectrum for Fabry-Perot semiconductor lasers by the Fourier transform method with a deconvolution process

To improve the accuracy of measured gain spectra, which is usually limited by the resolution of the optical spectrum analyzer (OSA), a deconvolution process based on the measured spectrum of a narrow linewidth semiconductor laser is applied in the Fourier transform method. The numerical simulation shows that practical gain spectra can be resumed by the Fourier transform method with the deconvolution process. Taking the OSA resolution to be 0.06, 0.1, and 0.2 nm, the gain-reflectivity product spectra with the difference of about 2% are obtained for a 1550-nm semiconductor laser with the cavity length of 720 pm. The spectra obtained by the Fourier transform method without the deconvolution process and the Hakki-Paoli method are presented and compared. The simulation also shows that the Fourier transform method has less sensitivity to noise than the Hakki-Paoli method.

The effect of Fabry-Perot interference on the packaging of SOI-based optoelectronic devices

During the packaging of optoelectrome device, a problem always met is the instability of output power. The main effect causing this problem, Fabry-Perot interference, is discussed in this paper. Both theoretical analysis and experimental test are carried out and in good agreement. As an example of avoiding the disadvantage of Fabry-Perot interference, the packaging process of Silicon-on-Insulator (SOI) based Variable Optical Attenuator(VOA) is shown at last.