A fully integrated 660 MHz low-swing energy-recycling DC-DC converter

A fully integrated 0.18 μm DC-DC buck converter using a low-swing "stacked driver" configuration is reported in this paper. A high switching frequency of 660 MHz reduces filter components to fit on chip, but this suffers from high switching losses. These losses are reduced using: 1) low-swing drivers; 2) supply stacking; and 3) introducing a charge transfer path to deliver excess charge from the positive metal-oxide semiconductor drive chain to the load, thereby recycling the charge. The working prototype circuit converts 2.2 to 0.75-1.0 V at 40-55 mA. Design and simulation of an improved circuit is also included that further improves the efficiency by enhancing the charge recycling path, providing automated zero voltage switching (ZVS) operation, and synchronizing the half-swing gating signals. © 2009 IEEE.

Saint Martin's biological survey report, Bangladesh: fauna and flora checklist

This report presents an overview of the land-based biodiversity of the St Martin's Island, based on field visits during October 2014 and from historical data.

Report on Saint Martin's Island ecosystem boundary, Bangladesh: final report

This report seeks to strengthen national capacity on managing Marine Protected Area (MPAs) in Bangladesh. St Martin's Island was used as the pilot ecosystem boundary delineation.

Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R

We investigate a new structure of high-power 660-nm AlGaInP laser diodes. In the structure, a p-GaAs layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. Stable fundamental mode operation was achieved at up to 80 mW without kinks, and the maximum output power was 184 mW at 22 degrees C. The threshold current was 40 mA.

~(179)Au的1/2[660](πi_(13/2))转动带

利用能量为 16 4— 180MeV的 3 5Cl束流 ,通过重离子核反应 14 9Sm(3 5Cl ,5n)研究了 179Au的高自旋态能级结构 .实验进行了γ射线的激发函数、X γ和γ γ t符合测量 .基于对实验测量结果的分析 ,首次建立了 179Au的 1 2 [6 6 0 ](πi13 2 )转动带 .结合已有的实验数据 ,着重讨论了奇AAu核中1 2 [6 6 0 ](πi13 2 )转动带的带头激发能随中子数的变化