Crystal structure of quenched and in-field electroluminescent phosphors

Electroluminescent zinc sulfide doped with copper and chloride (ZnS:Cu, Cl) powder was heated to 400°C and rapidly quenched to room temperature. Comparison between the quenched and non-quenched phosphors using synchrotron radiation X-ray powder diffraction (XRPD) (λ = 0.828692 Å) and X-ray absorption spectroscopy (XAS) was made. XRPD shows that the expected highly faulted structure is observed with excellent resolution out to 150° 2θ (or to (12 2 2) of the sphalerite phase). The quenched sample compared to the unheated sample shows a large change in peak ratios between 46.7° and 46.9°, which is thought to correspond to the wurtzite (0 0 6), (0 3 2) and sphalerite (3 3 3)/(5 1 1) peaks. Hence, a large proportion of this sphalerite diffraction is lost from the material upon rapid quenching, but not when the material is allowed to cool slowly. The Zn K-edge XAS data indicate that the crystalline structures are indistinguishable using this technique, but do give an indication that the electronic structure has altered due to changing intensity of the white line. It is noted that the blue electroluminescence (EL) emission bands are lost upon quenching: however, a large amount of total EL emission intensity is also removed, which is consistent with our findings. We report the XRPD of a working alternating-current electroluminescence device in the synchrotron X-ray beam, which exhibits a new diffraction pattern when the device is powered in an AC field even though the phosphor is fixed in the binder. Significantly, only a few crystals are required to yield the diffraction data because of the high flux X-ray source. These in panel data show multiple sharp diffraction lines spread out under the region, where capillary data show broad diffraction intensity indicating that the phosphor powder is comprised of unique crystals, each having different structures.

Mechanisms of efficiency enhancement in the doped electroluminescent devices based on a europium complex

In this study, we investigated the dependence of electroluminescence (EL) efficiency on carrier distribution in the light-emitting layer (EML) of the device based on Eu(TTA)(3)phen (TTA = thenoyltrifluoroacetone, phen = 1, 10-phenanthroline) doped 4,4'-N,N'-dicarbazole- biphenyl (CBP) system. We found that EL efficiency increases monotonously with increasing hole injection even when holes are the majority carriers. This phenomenon was attributed to the accumulation of holes in EML, which improves the balance of holes and electrons on Eu(TTA)(3)phen molecules, thus enhancing the EL efficiency.

Origin of improvement in device performance via the modification role of cesium hydroxide doped tris(8-hydroxyquinoline) aluminum interfacial layer on ITO cathode in inverted bottom-emission organic light-emitting diodes

It has been found that cesium hydroxide (CsOH) doped tris(8-hydroxyquinoline) aluminum (Alq(3)) as an interfacial modification layer on indium-tin-oxide (ITO) is an effective cathode structure in inverted bottom-emission organic light-emitting diodes (IBOLEDs). The efficiency and high temperature stability of IBOLEDs with CsOH:Alq(3) interfacial layer are greatly improved with respect to the IBOLEDs with the case of Cs2CO3:Alq(3). Herein, we have studied the origin of the improvement in efficiency and high temperature stability via the modification role of CsOH:Alq(3) interfacial layer on ITO cathode in IBOLEDs by various characterization methods, including atomic force microscopy (AFM), ultraviolet photoemission spectroscopy (UPS), X-ray photoemission spectroscopy (XPS) and capacitance versus voltage (C-V). The results clearly demonstrate that the CsOH:Alq(3) interfacial modification layer on ITO cathode not only enhances the stability of the cathode interface and electron-transporting layer above it. which are in favor of the improvement in device stability, but also reduces the electron injection barrier and increases the carrier density for current conduction, leading to higher efficiency.

Efficient organic electroluminescent devices based on an organosamarium complex

Several organic electroluminescent devices with different device structures were fabricated based on an organosamarium complex Sm(HFNH)(3)phen[HFNH=4, 4, 5, 5, 6, 6, 6-heptafluoro-l-(2-naphthvl)hexane-1, 3-dione; phen=1, 10-phenanthroline] as emitter. Their electroluminescent properties were investigated in detail. Although the devices with the optimal structure ITO/TPD (50nm)/ Sm(HFNH)(3)phen (xwt%):CBP (50nm)/BCP (20nm)/AIQ (30nm)/LiF (1 nm),/Al (200nm) show high brightness (more than 400cd/m(2)) and high current efficiency (about 1 cd/A), there are emissions from CBP, BCP and even from AIQ existing in the electroluminescence (EL) spectra besides emission from Sm(HFNH)(3)Phen. The reason to this was discussed. The device with the structure ITO/TPD (50 nm)/ Sm(HFNH)(3)phen (50 nm)/AIQ (30 nm)/LiF (1 nm)/Al (200 nm) exhibits the maximum brightness of 118 cd/m(2) and current efficiency of 0.029 cd/A, and shows emissions from AIQ and Sm(HFNH)(3)phen at high voltages. However, with the BCP hole-block layer added, the device [ITO/TPD (50 nm)/Sm(HFNH)(3)phen (50 nm)/BCP (20 nm)/AIQ (30 nm)/LiF (1 nm)/Al (200 nm)] exhibits pure Sm3+ emission in 2 the EL spectra even at high voltages, with the maximum current efficiency of 0.29cd/A and brightness of 82cd/m(2)

Charge carrier transporting, photoluminescent, and electroluminescent properties of zinc(II)-2-(2-hydroxyphenyl)benzothiazolate complex

Zinc(II)-2-(2-hydroxyphenyl)benzothiazolate complex is an excellent white-light-emitting material. Despite some studies devoted to this complex, no information on the real origin of the unusually broad electroluminescent (EL) emission is available. Therefore, we investigate photoluminescent and EL properties of the zinc complex. Orange phosphorescent emission at 580 nm was observed for the complex in thin film at 77 K, whereas only fluorescent emission was obtained at room temperature. Molecular orbitals, excitation energy, and emission energy of the complex were investigated using quantum chemical calculations. We fabricated the device with a structure of ITO/F16CuPc(5.5 nm)/Zn-complex/Al, where F16CuPc is hexadecafluoro copper phthalocyanine. The EL spectra varied strongly with the thickness of the emissive layer. We observed a significant change in the emission spectra with the viewing angles. Optical interference effects and light emission originating both from fluorescence and from phosphorescence can explain all of the observed phenomena, resulting in the broad light emission for the devices based on the Zn complex. We calculated the charge transfer integral and the reorganization energy to explain why the Zn complex is a better electron transporter than a hole transporter.

Phenylene vinylene-based electroluminescent polymers with electron transport block in the main chain

We report a new route for the design of soluble phenylene vinylene (PV) based electroluminescent polymers bearing electron-deficient oxadizole (OXD) and triazole (TZ) moieties in the main chains with the aryloxy linkage. Both series of the PV-based polymers were prepared by Wittig reaction. By properly adjusting the OXD and/or TZ content through copolymerization, we can achieve an enhanced balance of hole- and electron injections, such that the device efficiency is significantly improved. Light-emitting diodes fabricated from P1, P2, P3, P4, P5, P6, and P7 with the configuration of Indium-Tin Oxide (ITO)/Poly (styrene sulfonic acid) doped poly (ethylenedioxythiophene) (PEDOT)/polymer/Ca/Al, emit bright green light with the maximum peak around 500 nm. For the device using the optimal polymer (P4) as emitting layer, a maximum brightness of 1300 cd/m(2) at 20 V and a maximum luminance efficiency of 0.325 cd/A can be obtained.

Green electroluminescent polyfluorenes containing 1,8-naphthalimide moieties as color tuner

A series of copolymers (CNPFs) containing low-band-gap 1,8-naphthalimide moieties as color tuner was prepared by a Yamamoto coupling reaction of 2,7-dibromo-9,9-dioctylfluorene (DBF) and different amount of 4-(3,6-dibromocarbazol-9-yl)-N-(4'-tert-butyl-phenyl)-1,8-naphthalimide (Br-CN) (0.05-1 mol% feed ratio). The light emitting properties of the resulting copolymers showed a heavy dependence on the feed ratio. In photoluminescence (PL) studies, an efficient color tuning through the Forster energy transfer mechanism was revealed from blue to green as the increase of Br-CN content, while in electroluminescence (EL) studies, the color tuning was found to go through a charge trapping mechanism. It was found that by introduction of a very small amount of Br-CN (0.1-0.5 mol%) into polyfluorene, the emission color can be tuned from blue to pure green with Commission International de l'Echairage (CIE) coordinates being (0.21, 0.42) and (0.21, 0.48). A green emitting EL single-layer device based on CNPF containing 0.1 mol% of Br-CN showed good performances with a low turn-on voltage of 4.2 V, a brightness of 9104 cd/m(2), the maximum luminous efficiency of 2.74 cd/A and the maximum power efficiency of 1.51 lm/W.

Synthesis, characterization, photoluminescent and electroluminescent properties of new conjugated 2,2 '-(arylenedivinylene)bis-8-substituted quinolines

A series of new PPV oligomers containing 8-substituted quinoline, 2,2'-(arylenedivinylene) bis-8-quinoline derivatives, were designed and synthesized via a Knoevenagel condensation reaction of quinaldine, 8-hydroxy-or 8-methoxy-quinaldine with aromatic dialdehydes. These PPV oligomers were characterized by H-1 and C-13-NMR, X-ray diffraction, elemental analysis, UV-visible and fluorescence spectroscopies. The X-ray diffraction investigation showed that there are intermolecular pi...pi interactions in the solid state in 1 and 3. The optical and photoluminescent properties study demonstrated that the emission color of the resulting materials varies from blue to yellow and is dependent on the substituents (pi-donor and pi-acceptor groups) on both sides of the conjugated molecules and the aromatic core in the middle of the conjugated backbones. The electroluminescent devices using compounds 1-4 as the emitters and electron-transporting layers were fabricated with the structure ITO/NPB/emitter/LiF/Al. The best device performance with the maximum brightness of 5530 cd m(-2) and the luminous efficiency of 2.4 cd A(-1) is achieved by using compound 4, with intramolecular charge transfer character, as the emitter; these values represent a more than 5-fold improvement in brightness and efficiency compared to compound 3 without methoxy groups on the phenyl rings.

A novel terbium (III) beta-diketonate complex as thin film for optical device application

A novel terbium complex, Tb(acac)(3)AAP (acac: acetylacetone, AAP: 4-amino-antipyrine), was synthesized and its luminescent properties were studied. When it was used as an emitting center, triple-layer-type device with a structure of glass substrate/ITO (indium-tin oxide)/TPD (N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine)./Tb(acac)(3)AAP/PBD (2-(4-biphenyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole) or Alq(3) (tris(8-hydroxyquinolinato) aluminum)/Al (aluminum) exhibited bright characteristic emission of terbium ion upon applying d.c. voltage. The maximum luminance of the device is 56 cd/m(2) at 19 V and the maximum luminance efficiency is 0.357 lm/W.

Electroluminescent properties of the Tris-(acetylsalicylate)-terbium (Tb(AS)(3))

The solubility of [Tris-(acetylsalicylate)-terbium] [Tb(AS)(3)] is improved to a greater extent than [Tris-(salicylate)-terbium] [Tb(Sal)(3)] following introduction of a flexible acetyl group. Th3+ binds with acetylsalicylate in solution at low pH value and the resultant Tb(AS)(3) has good solubility in chloroform. A Green EL device with the structure ITO/PVK/PVB:PBD: Tb(AS)(3)/ PBD/Al has been fabricated based on soluble Tb(AS)(3), in which Tb(AS)(3) was first used as an emissive center doped with PVK and PBD. The hole-transporting layer and the emissive layer were formed by spin coating. The device exhibited a highly pure characteristic green light of Tb3+. (C) 2001 Elsevier Science B.V. All rights reserved.

Bright green organic electroluminescent devices based on a novel thermally stable terbium complex

A navel thermally stable terbium carboxylate complex, Tb(MTP)(3)(phen) (MTP=monotetradecyl phthalate, phen=1,10-phehanthroline), was synthesized and characterized. The device structure of glass substrate/indium-tin-oxide/poly(p-phenylenevinylene) (PPV)/poly (N-vinycarbazole) (PVK):Tb(MTP)(3)(phen): 1,3,4-oxadizole derivative (PBD)/tris(8-hydroxyquinoline) (Alq(3))/aluminum (Al) was employed to study the electroluminescent properties of Tb(MTP)(3)(phen). A green emission with extremely sharp spectral band of less than 10 nm at 544 nm peak wavelength was observed. A maximum luminance of 152 cd/m(2) and an external quantum efficiency of 0.017% were achieved at a drive voltage of 24 V. A possible mechanism of energy transfer based on the polymer doped with lanthanide organic complex was also proposed.

Electroluminescent devices based on monohexadecyl phthalate terbium

Electroluminescent devices with PVK film doped with monohexadecyl phthalate terbium and PBD were fabricated. The device structure of glass substrate/ITO/PPV/PVK:Tb(MHP)(3):PBD/Alq(3)/Al was employed. The emissive layer was formed by a spin-casting technique. The EL cells exhibited characteristic emission of terbium ions with a maximum luminance of 74 cd/m(2) at 18 V. (C) 1998 Elsevier Science S.A. All rights reserved.

Organic electroluminescent devices using rare earth complex Eu(DBM)(3) as an emitter

Eu3+ narrow band emitting EL device with PPV, Alq(3) as hole and electron transportation layers has been prepared. The emitting layer, which consists of PVK, Eu(DBM)(3) and PBD is formed by spin-casting method. A maximum luminance of 52cd.m(-2) is achieved from the device.

Bright red electroluminescent devices based on a soluble lanthanide complex Eu(DBM)(3)(phen)

Electroluminescent devices with PVK film doped with Eu(DBM)(3)(phen) and PBD were fabricated. The device structure of glass substrate/indium-tin-oxide/PPV/PVK:Eu(DBM)(3)-(phen):PBD/Alq(3)/Al was employed. The emissive layer was formed by spin-casting method. A sharply red electroluminescence with a maximum luminance of 114.4 cd/m(2) was achieved at 42 V.

Bright blue electroluminescent devices utilizing poly (N-vinylcarbazole) doped with fluorescent dye

Bright blue electroluminescent devices have been fabricated using poly (N-vinylcarbazole) (PVK) doped with perylene as the emissive layer, poly(p-phenylenevinylene) (PPV) as the hole-transporting layer, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), tris(8-hydroxyquinoline)aluminum (Alq(3)) as the electron-transporting layer, and Al as the cathode. A luminance of 700 cd/m(2) and a luminescent efficiency of 0.8% are achieved at a drive voltage of 36 V. In the experiment, it is found that the introduction of electron-transporting layer PBD has a great effect on the emissive color of the electroluminescent devices prepared by PVK doped with perylene. Yellow-green emission is observed from the device structure of glass substrate/indium-tin-oxide/PVK:perylene/Al. The possible emissive mechanisms are given. The effect of the transporting layer on the electroluminescence is also discussed. (C) 1997 Elsevier Science S.A.