Electrochemical phase formation involving multicomponents: hemispherical overlap models for varied nucleation and growth conditions

The phenomenological theory of hemispherical growth in the context of phase formation with more than one component is presented. The model discusses in a unified manner both instantaneous and progressive nucleation (at the substrate) as well as arbitrary growth rates (e.g. constant and diffusion controlled growth rates). A generalized version of Avrami ansatz (a mean field description) is used to tackle the ''overlap'' aspects arising from the growing multicentres of the many components involved, observing that the nucleation is confined to the substrate plane only. The time evolution of the total extent of macrogrowth as well as those of the individual components are discussed explicitly for the case of two phases. The asymptotic expressions for macrogrowth are derived. Such analysis depicts a saturation limit (i.e. the maximum extent of growth possible) for the slower growing component and its dependence on the kinetic parameters which, in the electrochemical context, can be controlled through potential. The significance of this model in the context of multicomponent alloy deposition and possible future directions for further development are pointed out.

Diffusion and Growth of the mu Phase (Ni6Nb7) in the Ni-Nb System

Incremental diffusion couple experiments are conducted to determine the average interdiffusion coefficient and the intrinsic diffusion coefficients of the species in the Ni6Nb7 (mu phase) in the Ni-Nb system. Further, the tracer diffusion coefficients are calculated from the knowledge of thermodynamic parameters. The diffusion rate of Ni is found to be higher than that of Nb, which indicates higher defect concentration in the Ni sublattice.

Morphology Controlled Growth of Meso-Porous Co3O4 Nanostructures and Study of Their Electrochemical Capacitive Behavior

The morphology of nanocrystalline Co3O4 synthesized through microwave irradiation of a solution of a cobalt complex is found to depend reproducibly on the conditions of synthesis and, in particular, on the composition of the solvent used. Despite the rapidity of the process, oriented aggregation occurs under certain conditions, depending on solvent composition. Annealing the oriented samples leads to microstructures with significant porosity, rendering the material suitable as electrodes for electrochemical capacitors. Electrochemical analysis of the oxide samples was carried out in 0.1M Na2SO4 electrolyte vs. Ag/AgCl electrode. A stable specific capacitance of 221 F/g was measured for a meso-porous sample displaying oriented aggregation. Stability of these oxide materials were checked for longer charge-discharge cycling. (C) 2012 The Electrochemical Society. DOI: 10.1149/2.002210jes] All rights reserved.

Diffusion and growth mechanism of phases in the Pd-Sn system

Growth mechanism of phases and atomic mechanism of diffusion are discussed in the Pd-Sn system. The Kirkendall marker plane location indicates that the PdSn4 phase grows because of diffusion of Sn. Atomic arrangement in the crystal indicates that Sn can diffuse through its own sublattice but Pd cannot diffuse unless antisites are present. The negligible diffusion of Pd indicates the absence of Pd antisites. The activation energy value indicates that the contribution from grain boundary diffusion cannot be neglected although experiments were conducted in the homologous temperature range of 0.7-0.79.

Uninterrupted and reusable source for the controlled growth of nanowires

Generally, the length of the oxide nanowires grown by vapor phase transport is limited by the degradation of the source materials. Furthermore, the source material is used once for the nanowires growth. By exploiting the Si-Zn phase diagram, we have developed a simple methodology for the non-catalytic growth of ultralong ZnO nanowires in large area with controllable aspect ratio and branched structures. The insolubility of Zn in Si and the use of a Si cap on the Zn source to prevent local source oxidation of Zn (i.e. prevents the degradation of the source) are the keys to grow longer nanowires without limitations. It has been shown that the aspect ratio can be controlled by thermodynamically (temperature) and more importantly by kinetically (vapor flux). One of the interesting findings is that the same source material can be used for several depositions of oxide nanostructured materials.

Effect of Nb orientation and deformation on the growth of Nb3Sn intermetallic superconductor by bronze technique

The growth of Nb3Sn by bronze technique on single crystals and deformed Nb is studied. The grain boundary diffusion-controlled growth rate is found to be higher for Nb-(0 1 3) than Nb-(0 1 1) because of smaller grain size of Nb3Sn. The difference in grain size is explained with the help of surface energies leading to different nucleation barrier. Significantly finer grains and higher growth rate of the product phase is found for rolled Nb because of available defects acting as potential nucleation sites.

Effect of Ga content in Cu(Ga) on the growth of V3Ga following bronze technique

Diffusion controlled growth rate of V3Ga in the Cu(Ga)/V system changes dramatically because of a small change in Ga content in Cu(Ga). One atomic percent increase from 15 to 16 leads to more than double the product phase layer thickness and a decrease in activation energy from 255 to 142 kJ/mol. Kirkendall marker experiment indicates that V3Ga grows because of diffusion of Ga. Role of different factors influencing the diffusion rate of Ga and high growth rate of V3Ga are discussed. (C) 2015 Elsevier Ltd. All rights reserved.

Controlled growth of aligned ZnO nanowires

The growth of vertically aligned zinc oxide nanowires (ZnO NW) using a simple vapor deposition method system is reported. The growth properties are studied as a function of the Au catalyst layer thickness, pressure, deposition temperature, and oxygen ratio. It was found that the diameter and density of the nanowires is controlled mostly by the growth temperature and pressure. The alignment of the nanowires depends on a combination of three factors including the pressure, temperature and the oxygen ratio. Our results implicates the growth occurs by a vapor liquid solid (VLS) process [1].

Controlled growth orientation of carbon nanotube pillars by catalyst patterning in microtrenches

We present a novel method for controlling the growth orientation of individual carbon nanotube (CNT) microstructures on a silicon wafer substrate. Our method controls the CNT forest orientation by patterning the catalyst layer used in the CNTs growth on slanted KOH edges. The overlap of catalyst area on the horizontal bottom and sloped sidewall surfaces of the KOH-etched substrate enables precise variation of the growth direction. These inclined structures can profit from the outstanding mechanical, electrical, thermal, and optical properties of CNTs and can therefore improve the performance of several MEMS devices. Inclined CNT microstructures could for instance be used as cantilever springs in probe card arrays, as tips in dip-pen lithography, and as sensing element in advanced transducers. ©2009 IEEE.

High performance transistors based on the controlled growth of triisopropylsilylethynyl-pentacene crystals via non-isotropic solvent evaporation

Triisopropylsilylethynyl-pentacene (TIPS-PEN) has proven to be one of the most promising small molecules in the field of molecular electronics, due to its unique features in terms of stability, performance and ease of processing. Among a wide variety of well-established techniques for the deposition of TIPS-PEN, blade-metered methods have recently gained great interest towards the formation of uniform crystalline films over a large area. Following this rationale, we herein designed a versatile approach based on blade-coating, which overcomes the problem of anisotropic crystal formation by manipulating the solvent evaporation behaviour, in a way that brings about a preferential degree of crystal orientation. The applicability of this method was evaluated by fabricating field-effect transistors on glass as well as on silicon dioxide/silicon (SiO2/Si) substrates. Interestingly, in an attempt to improve the rheological and wetting behaviour of the liquid films on the SiO2/Si substrates, we introduced a polymeric interlayer of polystyrene (PS) or polymethylmethacrylate (PMMA) which concurrently acts as passivation and crystallization assisting layer. In this case, the synergistic effects of the highly-ordered crystalline structure and the oxide surface modification were thoroughly investigated. The overall performance of the fabricated devices revealed excellent electrical characteristics, with high saturation mobilities up to 0.72 cm2 V-1 s-1 (on glass with polymeric dielectric), on/off current ratio >104 and low threshold voltage values (<-5 V). This journal is © the Partner Organisations 2014.

Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. High-power, long-life quantum dots (QD) lasers emitting at similar to 1 mu m, red-emitting QD lasers, and long-wavelength QD lasers on GaAs substrates have successfully been achieved by optimizing the growth conditions of QDs.

Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

Various techniques on the growth of self-assembled compound semiconductor nano-structures (quantum dots, QDs) have been tried to enhance the controlling on size, density, emitting wavelength, uniformity in size and ordering in location of the QDs. Optimized growth conditions have been used in the application of the QD materials in opto-electronic devices. High-power long-lifetime quantum-dot laser-diodes (QD-LDs) emitting near 1 mu m, QD-LDs emitting in red-light range, 1.3 mu m QD-LDs on GaAs substrate and quantum-dot super-luminescent diodes (QD-SLDs) have successfully been achieved.

Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism

High quality silicon nanowires (SiNWs) were grown directly from n-(111) silicon single crystal substrate by using Au film as a metallic catalyst. The diameter and length of the formed nanowires are 30-60 nm and from several micrometers to sereral tens of micrometers, respectively. The effects of Au film thickness, annealing temperature, growth time and N-2 gas flow rate on the formation of the nanowires were experimentally investigated. The results confirmed that the silicon nanowires with controlled diameter, length, shape and orientation can be obtained via reasonably choosing and optimizing various technical conditions. The formation process of the silicon nanowires is analyzed qualitatively based on solid-liquid-solid growth mechanism.