Análisis del efecto laminador del cauce utilizando modelos fluviales bidimensionales

El método de Muskingum-Cunge, con más de 45 años de historia, sigue siendo uno de los más empleados a la hora de calcular el tránsito en un cauce. Una vez calibrado, permite realizar cálculos precisos, siendo asimismo mucho más rápido que los métodos que consideran las ecuaciones completas. Por esta razón, en el presente trabajo de investigación se llevó a cabo un análisis de su precisión, comparándolo con los resultados de un modelo hidráulico bidimensional. En paralelo se llevó a cabo un análisis de sus limitaciones y se ensayó una metodología práctica de aplicación. Con esta motivación se llevaron a cabo más de 200 simulaciones de tránsito en cauces prismáticos y naturales. Los cálculos se realizaron empleando el programa HEC-HMS con el método de Muskingum-Cunge de sección de 8 puntos, así como con la herramienta de cálculo hidráulico bidimensional InfoWorks ICM. Se eligieron HEC-HMS por su gran difusión e InfoWorks ICM por su rapidez de cálculo, pues emplea la tecnología CUDA (Arquitectura Unificada de Dispositivos de Cálculo). Inicialmente se validó el modelo hidráulico bidimensional contrastándolo con la formulación unidimensional en régimen uniforme y variado, así como con fórmulas analíticas de régimen variable, consiguiéndose resultados muy satisfactorios. También se llevó a cabo un análisis de la sensibilidad al mallado del modelo bidimensional aplicado a tránsitos, obteniéndose unos ábacos con tamaños recomendados de los elementos 2D que cuantifican el error cometido. Con la técnica del análisis dimensional se revisó una correlación de los resultados obtenidos entre ambos métodos, ponderando su precisión y definiendo intervalos de validez para la mejor utilización del método de Muskingum-Cunge. Simultáneamente se desarrolló una metodología que permite obtener la sección característica media de 8 puntos para el cálculo de un tránsito, basándose en una serie de simulaciones bidimensionales simplificadas. De este modo se pretende facilitar el uso y la correcta definición de los modelos hidrológicos. The Muskingum-Cunge methodology, which has been used for more 45 than years, is still one of the main procedures to calculate stream routing. Once calibrated, it gives precise results, and it is also much faster than other methods that consider the full hydraulic equations. Therefore, in the present investigation an analysis of its accuracy was carried out by comparing it with the results of a two-dimensional hydraulic model. At the same time, reasonable ranges of applicability as well as an iterative method for its adequate use were defined. With this motivation more than 200 simulations of stream routing were conducted in both synthetic and natural waterways. Calculations were performed with the aid of HEC-HMS choosing the Muskingum-Cunge 8 point cross-section method and in InfoWorks ICM, a two-dimensional hydraulic calculation software. HEC-HMS was chosen because its extensive use and InfoWorks ICM for its calculation speed as it takes advantage of the CUDA technology (Compute Unified Device Architecture). Initially, the two-dimensional hydraulic engine was compared to one-dimensional formulation in both uniform and varied flow. Then it was contrasted to variable flow analytical formulae, achieving most satisfactory results. A sensitivity size analysis of the two-dimensional rooting model mesh was also conduced, obtaining charts with suggested 2D element sizes to narrow the committed error. With the technique of dimensional analysis a correlation of results between the two methods was reviewed, assessing their accuracy and defining valid intervals for improved use of the Muskingum-Cunge method. Simultaneously, a methodology to draw a representative 8 point cross-section was developed, based on a sequence of simplified two-dimensional simulations. This procedure is intended to provide a simplified approach and accurate definition of hydrological models.

GPGPU implementation of growing neural gas: application to 3D scene reconstruction

Self-organising neural models have the ability to provide a good representation of the input space. In particular the Growing Neural Gas (GNG) is a suitable model because of its flexibility, rapid adaptation and excellent quality of representation. However, this type of learning is time-consuming, especially for high-dimensional input data. Since real applications often work under time constraints, it is necessary to adapt the learning process in order to complete it in a predefined time. This paper proposes a Graphics Processing Unit (GPU) parallel implementation of the GNG with Compute Unified Device Architecture (CUDA). In contrast to existing algorithms, the proposed GPU implementation allows the acceleration of the learning process keeping a good quality of representation. Comparative experiments using iterative, parallel and hybrid implementations are carried out to demonstrate the effectiveness of CUDA implementation. The results show that GNG learning with the proposed implementation achieves a speed-up of 6× compared with the single-threaded CPU implementation. GPU implementation has also been applied to a real application with time constraints: acceleration of 3D scene reconstruction for egomotion, in order to validate the proposal.

Visualization of flow fields in the web platform

Visualization of vector fields plays an important role in research activities nowadays -- Web applications allow a fast, multi-platform and multi-device access to data, which results in the need of optimized applications to be implemented in both high-performance and low-performance devices -- Point trajectory calculation procedures usually perform repeated calculations due to the fact that several points might lie over the same trajectory -- This paper presents a new methodology to calculate point trajectories over highly-dense and uniformly-distributed grid of points in which the trajectories are forced to lie over the points in the grid -- Its advantages rely on a highly parallel computing architecture implementation and in the reduction of the computational effort to calculate the stream paths since unnecessary calculations are avoided, reusing data through iterations -- As case study, the visualization of oceanic currents through in the web platform is presented and analyzed, using WebGL as the parallel computing architecture and the rendering Application Programming Interface

Characteristics of high-performance ambipolar organic field-effect transistors based on a diketopyrrolopyrrole-benzothiadiazole copolymer

In this paper, we report the device characteristics of ambipolar thin-film transistors (TFTs) based on a diketopyrrolopyrrole-benzothiadiazole copolymer. This polymer semiconductor exhibits the largest comparable electron and hole mobility values in a single organic semiconductor. The key to realizing such high mobility values, which are $0.5&cm}{2}/\hbox{V}̇\hbox{s, is molecular design, i.e., the use of suitable surface treatments of the source/drain contact electrodes and device architectures, particularly top-gate configurations. The subthreshold characteristics of the TFT devices are greatly improved by the use of dual-gate device geometry. We also report the first measurement of the velocity distribution of electron and hole velocities in an ambipolar organic semiconductor.

Floating-body SOI memory: Concepts, physics and challenges

We present an overview of the single-transistor memory cells (lT-DRAMs), which are based on floating-body effects in SOI MOSFETs. The typical device architectures, principles of operation and key mechanisms for programming are described. The various approaches (Z-RAM, MSDRAM, etc) are compared in terms of performance and potential for aggressive scaling. ©The Electrochemical Society.

Blue-phase templated fabrication of three-dimensional nanostructures for photonic applications.

A promising approach to the fabrication of materials with nanoscale features is the transfer of liquid-crystalline structure to polymers. However, this has not been achieved in systems with full three-dimensional periodicity. Here we demonstrate the fabrication of self-assembled three-dimensional nanostructures by polymer templating blue phase I, a chiral liquid crystal with cubic symmetry. Blue phase I was photopolymerized and the remaining liquid crystal removed to create a porous free-standing cast, which retains the chiral three-dimensional structure of the blue phase, yet contains no chiral additive molecules. The cast may in turn be used as a hard template for the fabrication of new materials. By refilling the cast with an achiral nematic liquid crystal, we created templated blue phases that have unprecedented thermal stability in the range -125 to 125 °C, and that act as both mirrorless lasers and switchable electro-optic devices. Blue-phase templated materials will facilitate advances in device architectures for photonics applications in particular.

Blue-phase templated fabrication of three-dimensional nanostructures for photonic applications

A promising approach to the fabrication of materials with nanoscale features is the transfer of liquid-crystalline structure to polymers. However, this has not been achieved in systems with full three-dimensional periodicity. Here we demonstrate the fabrication of self-assembled three-dimensional nanostructures by polymer templating blue phase I, a chiral liquid crystal with cubic symmetry. Blue phase I was photopolymerized and the remaining liquid crystal removed to create a porous free-standing cast, which retains the chiral three-dimensional structure of the blue phase, yet contains no chiral additive molecules. The cast may in turn be used as a hard template for the fabrication of new materials. By refilling the cast with an achiral nematic liquid crystal, we created templated blue phases that have unprecedented thermal stability in the range-125 to 125°C, and that act as both mirrorless lasers and switchable electro-optic devices. Blue-phase templated materials will facilitate advances in device architectures for photonics applications in particular. © 2012 Macmillan Publishers Limited. All rights reserved.

Au nanorods-semiconductor nanowire hybrid nanostructures : nanofabrication techniques and optoelectronic properties

The objective of this thesis is the exploration and characterization of novel Au nanorod-semiconductor nanowire hybrid nanostructures. I provide a comprehensive bottom-up approach in which, starting from the synthesis and theoretical investigation of the optical properties of Au nanorods, I design, nanofabricate and characterize Au nanorods-semiconductor nanowire hybrid nanodevices with novel optoelectronic capabilities compared to the non-hybrid counterpart. In this regards, I first discuss the seed-mediated protocols to synthesize Au nanorods with different sizes and the influence of nanorod geometries and non-homogeneous surrounding medium on the optical properties investigated by theoretical simulation. Novel methodologies for assembling Au nanorods on (i) a Si/SiO2 substrate with highly-ordered architecture and (ii) on semiconductor nanowires with spatial precision are developed and optimized. By exploiting these approaches, I demonstrate that Raman active modes of an individual ZnO nanowire can be detected in non-resonant conditions by exploring the longitudinal plasmonic resonance mediation of chemical-synthesized Au nanorods deposited on the nanowire surface otherwise not observable on bare ZnO nanowire. Finally, nanofabrication and detailed electrical characterization of ZnO nanowire field-effect transistor (FET) and optoelectronic properties of Au nanorods - ZnO nanowire FET tunable near-infrared photodetector are investigated. In particular we demonstrated orders of magnitude enhancement in the photocurrent intensity in the explored range of wavelengths and 40 times faster time response compared to the bare ZnO FET detector. The improved performance, attributed to the plasmonicmediated hot-electron generation and injection mechanism underlying the photoresponse is investigated both experimentally and theoretically. The miniaturized, tunable and integrated capabilities offered by metal nanorodssemicondictor nanowire device architectures presented in this thesis work could have an important impact in many application fields such as opto-electronic sensors, photodetectors and photovoltaic devices and open new avenues for designing of novel nanoscale optoelectronic devices.

Photoconduction action spectra of regio-regular poly(3-hexylthiopene):TiO2 diodes

The development of polymer-based photovoltaic devices brings the promise of low-cost and lightweight solar energy conversion systems. This technology requires new materials and device architectures with enhanced efficiency and lifetime, which depends on the understanding of charge-transport mechanisms. Organic films combined with electronegative nanoparticles may form systems with efficient dissociation of the photogenerated excitons, thus increasing the number of carriers to be collected by the electrodes. In this paper we investigate the steady-state photoconductive action spectra of devices formed by a bilayer of regio-regular poly(3-hexylthiophene) (RRP3HT) and TiO2 sandwiched between ITO and aluminum electrodes (ITO/TiO2:RRP3HT/Al). Photocurrents were measured for distinct bias voltages with illumination from either side of the device. Heterojunction structures were prepared by spin coating a RRP3HT film on an already deposited TiO2 layer on ITO. Symbatic and antibatic curves were obtained and a model for photocurrent action spectra was able to fit the symbatic responses. The quantum yield increased with the electric field, indicating that exciton dissociation is a field-assisted process as in an Onsager mechanism. Furthermore, the quantum yield was significantly higher when illumination was carried out through the ITO electrode onto which the TiO2 layer was deposited, as the highly electronegative TiO2 nanoparticles were efficient in exciton dissociation.

Physical models for numerical simulation of Si-based nanoscale FETs and sensors

To continuously improve the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs), innovative device architectures, gate stack engineering and mobility enhancement techniques are under investigation. In this framework, new physics-based models for Technology Computer-Aided-Design (TCAD) simulation tools are needed to accurately predict the performance of upcoming nanoscale devices and to provide guidelines for their optimization. In this thesis, advanced physically-based mobility models for ultrathin body (UTB) devices with either planar or vertical architectures such as single-gate silicon-on-insulator (SOI) field-effect transistors (FETs), double-gate FETs, FinFETs and silicon nanowire FETs, integrating strain technology and high-κ gate stacks are presented. The effective mobility of the two-dimensional electron/hole gas in a UTB FETs channel is calculated taking into account its tensorial nature and the quantization effects. All the scattering events relevant for thin silicon films and for high-κ dielectrics and metal gates have been addressed and modeled for UTB FETs on differently oriented substrates. The effects of mechanical stress on (100) and (110) silicon band structures have been modeled for a generic stress configuration. Performance will also derive from heterogeneity, coming from the increasing diversity of functions integrated on complementary metal-oxide-semiconductor (CMOS) platforms. For example, new architectural concepts are of interest not only to extend the FET scaling process, but also to develop innovative sensor applications. Benefiting from properties like large surface-to-volume ratio and extreme sensitivity to surface modifications, silicon-nanowire-based sensors are gaining special attention in research. In this thesis, a comprehensive analysis of the physical effects playing a role in the detection of gas molecules is carried out by TCAD simulations combined with interface characterization techniques. The complex interaction of charge transport in silicon nanowires of different dimensions with interface trap states and remote charges is addressed to correctly reproduce experimental results of recently fabricated gas nanosensors.

Organic thin-film photovoltaics

Zusammenfassung Zur Verbesserung der Leistungsumwandlung in organischen Solarzellen sind neue Materialien von zentraler Bedeutung, die sämtliche Erfordernisse für organische Photovoltaik-Elemente erfüllen. In der vorliegenden Arbeit „Organic thin-film photovoltaics“ wurden im Hinblick auf ein besseres Verständnis der Zusammenhänge zwischen molekularer Struktur und der Leistungsfähigkeit neue Materialien in „bulk-heterojunction“ Solarzellen und in Festphasen-Farbstoffsensibilisierten Solarzellen untersucht. Durch die Anwendung selbstorganisierender Materialien, diskotischer Graphen-Derivate oder konjugierter Polymere in Verbindung mit entsprechenden Akzeptoren in den „bulk-heterojunction“ Solarzellen wurde gezeigt, dass mit einer Erhöhung der Ordnung durch thermische Behandlung eine verbesserte Leistung des Photovoltaik-Elements einhergeht. In den Festphasen-Farbstoffsensibilisierten Solarzellen wurden zwei neue Farbstoffe untersucht, und es konnte gezeigt werden, dass diese gute Leistung zeigten. Ferner ermöglicht das komplementäre Absorptionsvermögen der beiden Farbstoffe die Herstellung von Vollspektrum-Zellen.

Identification of the degradation mechanisms of organic solar cells:active layer and interfacial layers

Organic Solar Cells (OSCs) represent a photovoltaic technology with multiple interesting application properties. However, the establishment of this technology into the market is subject to the achievement of operational lifetimes appropriate to their application purposes. Thus, comprehensive understanding of the degradation mechanisms occurring in OSCs is mandatory in both selecting more intrinsically stable components and/or device architectures and implementing strategies that mitigate the encountered stability issues. Inverted devices can suffer from mechanical stress and delamination at the interface between the active layer, e.g. poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM), and the hole transport layer, e.g. poly(3,4-ethylenedioxythiophene):poly(p-styrene sulfonate) (PEDOT:PSS). This work proposes the incorporation of a thin adhesive interlayer, consisting of a diblock copolymer composed of a P3HT block and a thermally-triggerable, alkyl-protected PSS block. In this context, the synthesis of poly(neopentyl p-styrene sulfonate) (PNSS) with controlled molar mass and low dispersity (Ð ≤ 1.50) via Reversible Addition-Fragmentation chain Transfer (RAFT) polymerisation has been extensively studied. Subsequently, Atomic Force Microscopy (AFM) was explored to characterise the thermal deprotection of P3HT-b-PNSS thin layers to yield amphiphilic P3HT-b-PSS, indicating that surface deprotection prior to thermal treatment could occur. Finally, structural variation of the alkyl protecting group in PSS allowed reducing the thermal treatment duration from 3 hours (P3HT-b-PNSS) to 45 minutes for the poly(isobutyl p-styrene sulfonate) (PiBSS) analogous copolymer. Another critical issue regarding the stability of OSCs is the sunlight-driven chemical degradation of the active layer. In the study herein, the combination of experimental techniques and theoretical calculations has allowed identification of the structural weaknesses of poly[(4,4’- bis(2-ethylhexyl) dithieno [3,2-b:2’,3’-d]silole)-2,6-diyl-alt-(4,7-bis(2-thienyl)-2,1,3-benzothiadiazole)-5,5’-diyl], Si-PCPDTBT, upon photochemical treatment in air. Additionally, the study of the relative photodegradation rates in air of a series of polymers with systematically modified backbones and/or alkyl side chains has shown no direct correlation between chemical structure and stability. It is proposed instead that photostability is highly dependent on the crystalline character of the deposited films. Furthermore, it was verified that photostability of blends based on these polymers is dictated by the (de)stabilising effect that [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) has over each polymer. Finally, a multiscale analysis on the degradation of solar cells based on poly[4,4' bis(2- ethylhexyl) dithieno[3,2-b:2',3'-d]silole)-2,6-diyl-alt-[2,5 bis(3 tetradecylthiophen 2-yl)thiazole[5,4-d]thiazole)-1,8-diyl] and PCBM, indicated that by judicious selection of device layers, architectures, and encapsulation materials, operational lifetimes up to 3.3 years with no efficiency losses can be successfully achieved.

The development of planar high-K/III-V p-channel MOSFETs for post-silicon CMOS

Conventional Si complementary-metal-oxide-semiconductor (CMOS) scaling is fast approaching its limits. The extension of the logic device roadmap for future enhancements in transistor performance requires non-Si materials and new device architectures. III-V materials, due to their superior electron transport properties, are well poised to replace Si as the channel material beyond the 10nm technology node to mitigate the performance loss of Si transistors from further reductions in supply voltage to minimise power dissipation in logic circuits. However several key challenges, including a high quality dielectric/III-V gate stack, a low-resistance source/drain (S/D) technology, heterointegration onto a Si platform and a viable III-V p-metal-oxide-semiconductor field-effect-transistor (MOSFET), need to be addressed before III-Vs can be employed in CMOS. This Thesis specifically addressed the development and demonstration of planar III-V p-MOSFETs, to complement the n-MOSFET, thereby enabling an all III-V CMOS technology to be realised. This work explored the application of InGaAs and InGaSb material systems as the channel, in conjunction with Al2O3/metal gate stacks, for p-MOSFET development based on the buried-channel flatband device architecture. The body of work undertaken comprised material development, process module development and integration into a robust fabrication flow for the demonstration of p-channel devices. The parameter space in the design of the device layer structure, based around the III-V channel/barrier material options of In_x≥0.53Ga_1-xAs/In_0.52Al_0.48As and In_x≥0.1Ga_1-xSb/AlSb, was systematically examined to improve hole channel transport. A mobility of 433 cm²/Vs, the highest room temperature hole mobility of any InGaAs quantum-well channel reported to date, was obtained for the In_0.85Ga_0.15As (2.1% strain) structure. S/D ohmic contacts were developed based on thermally annealed Au/Zn/Au metallisation and validated using transmission line model test structures. The effects of metallisation thickness, diffusion barriers and de-oxidation conditions were examined. Contacts to InGaSb-channel structures were found to be sensitive to de-oxidation conditions. A fabrication process, based on a lithographically-aligned double ohmic patterning approach, was realised for deep submicron gate-to-source/drain gap (L_side) scaling to minimise the access resistance, thereby mitigating the effects of parasitic S/D series resistance on transistor performance. The developed process yielded gaps as small as 20nm. For high-k integration on GaSb, ex-situ ammonium sulphide ((NH₄)₂S) treatments, in the range 1%-22%, for 10min at 295K were systematically explored for improving the electrical properties of the Al₂O₃/GaSb interface. Electrical and physical characterisation indicated the 1% treatment to be most effective with interface trap densities in the range of 4 - 10×10¹²cm^-2eV^-1 in the lower half of the bandgap. An extended study, comprising additional immersion times at each sulphide concentration, was further undertaken to determine the surface roughness and the etching nature of the treatments on GaSb. A number of p-MOSFETs based on III-V-channels with the most promising hole transport and integration of the developed process modules were successfully demonstrated in this work. Although the non-inverted InGaAs-channel devices showed good current modulation and switch-off characteristics, several aspects of performance were non-ideal; depletion-mode operation, modest drive current (I_d,sat=1.14mA/mm), double peaked transconductance (g_m=1.06mS/mm), high subthreshold swing (SS=301mV/dec) and high on-resistance (R_on=845kΩ.μm). Despite demonstrating substantial improvement in the on-state metrics of I_d,sat (11×), g_m (5.5×) and R_on (5.6×), inverted devices did not switch-off. Scaling gate-to-source/drain gap (L_side) from 1μm down to 70nm improved I_d,sat (72.4mA/mm) by a factor of 3.6 and gm (25.8mS/mm) by a factor of 4.1 in inverted InGaAs-channel devices. Well-controlled current modulation and good saturation behaviour was observed for InGaSb-channel devices. In the on-state In_0.3Ga_0.7Sb-channel (I_d,sat=49.4mA/mm, g_m=12.3mS/mm, R_on=31.7kΩ.μm) and In_0.4Ga_0.6Sb-channel (I_d,sat=38mA/mm, g_m=11.9mS/mm, R_on=73.5kΩ.μm) devices outperformed the InGaAs-channel devices. However the devices could not be switched off. These findings indicate that III-V p-MOSFETs based on InGaSb as opposed to InGaAs channels are more suited as the p-channel option for post-Si CMOS.

Towards a unified service description language for the internet of services : requirements and first developments

Service-oriented Architectures (SOA) and Web services leverage the technical value of solutions in the areas of distributed systems and cross-enterprise integration. The emergence of Internet marketplaces for business services is driving the need to describe services, not only from a technical level, but also from a business and operational perspective. While, SOA and Web services reside in an IT layer, organizations owing Internet marketplaces are requiring advertising and trading business services which reside in a business layer. As a result, the gap between business and IT needs to be closed. This paper presents USDL (Unified Service Description Language), a specification language to describe services from a business, operational and technical perspective. USDL plays a major role in the Internet of Services to describe tradable services which are advertised in electronic marketplaces. The language has been tested using two service marketplaces as use cases.

Multi-device key management using visual side channels in pervasive computing environments

In the modern connected world, pervasive computing has become reality. Thanks to the ubiquity of mobile computing devices and emerging cloud-based services, the users permanently stay connected to their data. This introduces a slew of new security challenges, including the problem of multi-device key management and single-sign-on architectures. One solution to this problem is the utilization of secure side-channels for authentication, including the visual channel as vicinity proof. However, existing approaches often assume confidentiality of the visual channel, or provide only insufficient means of mitigating a man-in-the-middle attack. In this work, we introduce QR-Auth, a two-step, 2D barcode based authentication scheme for mobile devices which aims specifically at key management and key sharing across devices in a pervasive environment. It requires minimal user interaction and therefore provides better usability than most existing schemes, without compromising its security. We show how our approach fits in existing authorization delegation and one-time-password generation schemes, and that it is resilient to man-in-the-middle attacks.