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Photodetection with gate-controlled lateral BJTs from standard CMOS technology

The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS transistor in inversion mode, the photodetector allows for increasing the photocurrent gain by 106 at low light intensities when the base-emitter voltage is smaller than 0.4 V, and BJT is off. Two operation modes, with constant voltage bias between gate and emitter/source terminals and between gate and base/body terminals, allow for tuning the photoresponse from sublinear to slightly above linear, satisfying the application requirements for wide dynamic range, high-contrast, or linear imaging. MOSFETs from a standard 0.18-μm triple-well complementary-metal oxide semiconductor technology with a width to length ratio of 8 μm /2 μm and a total area of ∼ 500μm2 are used. When using this area, the responsivities are 16-20 kA/W. © 2001-2012 IEEE.

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ein Beitrag zur Geschichte der jüd. Gemeinde Worms mit zwei Briefen des A. Weckerling. Von S. Rothschild

Trium scriptorum illustrium de tribus Judaeorum sectis syntagma : in quo Nicolai Serarii, Johannis Drusii, Josephi Scaligeri opuscula quae eò pertinent, cum aliis, junctim exhibentur. Jacobus Triglandius J. F. J. N. Diatriben de secta Karaeorum adjecit

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Aus der Zeit der Renaissance : Nicolaus von Cusa. Jacobus Faber Stapulensis. Bonet de Lattes. Carolus Bovillus

Jakob Guttmann

Ms. germ. qu. 11 - Belial, dt. nach Jacobus de Theramo

Vorbesitzer: Erhard von Muggenthal auf Hexenagger; Becker (Würzburg 1852)

Fragm. germ. IV 21 - Privileg für Valentin Geißler, Buchdrucker in Nürnberg, zum Druck der Nürnberger Erneuerten Reformation; Preßburg 5. November 1563. Abschrift

Vorbesitzer: Georg Kloß