Ridge-shape phase distribution adjacent to 180 degrees domain wall in congruent LiNbO3 crystal

The digital holographic interferometry is used in the dynamic and static measurements of phase variation induced by domain inversion. For the first time, to the authors' knowledge, they observe the existence of ridge-shape phase distribution adjacent to 180 degrees domain wall in congruent LiNbO3 crystal. During the domain wall motion, the phase variations are not uniform but have obvious relaxations. In the static measurement, the ridge elevation can vary linearly with the uniform electric field. The reasonable assumptions are proposed to explain these effects. (c) 2006 American Institute of Physics.

Ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass produced by He+ ion implantation combined with Ar+ ion beam etching

This paper reports on the fabrication and characterization of a ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass. The He+ ion implantation (at energy of 2.8 MeV) is first applied onto the sample to produce a planar waveguide substrate, and then Ar+ ion beam etching (at energy of 500 eV) is carried out to construct rib stripes on the sample surface that has been deposited by a specially designed photoresist mask. According to a reconstructed refractive index profile of the waveguide cross section, the modal distribution of the waveguide is simulated by applying a computer code based on the beam propagation method, which shows reasonable agreement with the experimentally observed waveguide mode by using the end-face coupling method. Simulation of the incident He ions at 2.8 MeV penetrating into the Er3+/Yb3+ co-doped phosphate glass substrate is also performed to provide helpful information on waveguide formation.

Self-pulsation in a two-section DFB laser with a varied ridge width

A 1.55 mu m InGaAsP-InP two-section DFB laser with a variable ridge width has been fabricated. Self-pulsations with frequencies around 3 GHz and 40 GHz are observed. The pulsation mechanisms related to the two frequencies are discussed and the tunability of generated self-pulsations is studied.

A ridge width varied two-section index-coupled DFB self-pulsation laser with a wide continuously tunable frequency range

A 1.55 mu m InGaAsP-InP index-coupled two-section DFB self-pulsation laser (SPL) with a varied ridge width has been fabricated. A record wide self-pulsation tuning range above 450 GHz has been achieved for this index-coupled DFB SPL. Furthermore, frequency locking to an optically injected modulated signal is successfully demonstrated.

1.55-mu m ridge DFB laser integrated with a buried-ridge-stripe dual-core spot-size converter by quantum-well intermixing

A ridge distributed feedback laser monolithically integrated with a buried-ridge-stripe spot-size converter operating at 1.55 mu m was successfully fabricated by means of low-energy ion implantation quantum-well intermixing and dual-core technologies. The passive waveguide was optically combined with a laterally exponentially tapered active core to control the mode size. The devices emit in a single transverse and single longitudinal mode with a sidemode suppression ratio of 38.0 dB. The threshold current was 25 mA. The beam divergence angles in the horizontal and vertical directions were as small as 8.0 degrees x 12.6 degrees, respectively, resulting in 3.0-dB coupling loss with a cleaved single-mode optical fiber.

Ridge waveguide laser integrated with spot-size converter in a single step epitaxial for high coupling efficiency to single-mode fibres

A 1.55-mum laser diode integrated with a spot-size converter was fabricated in a single step epitaxial by using the conventional photolithography and chemical wet etching process. The device was constructed by a conventional ridge waveguide active layer and a larger passive ridge-waveguide layer. The threshold current was 40 mA together with high slope efficiency of 0.24 W/A. The beam divergence angles in the horizontal and vertical directions were as small as 12.0degrees x 15.0degrees, respectively, resulting in about 3.2-dB coupling losses with a cleaved optical fibre.

Electroabsorption modulator integrated with buried-ridge-stripe dual-core spot-size converter by quantum-well intermixing

A single shallow ridge electroabsorption modulator monolithically integrated with a buried-ridge-stripe dual-core spot-size converter at the input and output port was fabricated by combining quantum-well intermixing and dual-core integration techniques simultaneously, using only a two-step low-pressure metal-organic vapor phase epitaxial process, conventional photolithography, and a chemical wet etching process. The optical insertion loss of the modulator in the on-state and the dc extinction ratio between 0 and -3 V at 1550 nm was -7.5 and 16 dB, respectively. The 3-dB modulation bandwidth was more than 10.0 GHz in electrical-optical response.