Very large dielectric constant of highly oriented Pb1-xBaxTiO3 thin films prepared by chemical deposition

Highly (100) oriented Pb0.8Ba0.2TiO3/LaNiO3 structures were grown on LaAlO3(100) substrates by using a wet, soft chemical method and crystallized by the microwave oven technique. The Au/PBT/LaNiO3/LaAlO3 capacitor shows a hysteresis loop with remnant polarization, P-r, of 15 muC/cm(2), and coercive field, E-c, of 47 kV/cm at an applied voltage of 3 V, along with a dielectric constant over 1800. Atomic force microscopy showed that Pb0.8Ba0.2TiO3 is composed of large grains about 300 nm. The experimental results demonstrated that the microwave preparation is rapid, clean, and energy efficient. Therefore, we demonstrated that the combination of the soft chemical method with the microwave process is a promising technique to grow highly oriented thin films with excellent dielectric and ferroelectric properties, which can be used in various integrated device applications. (C) 2004 American Institute of Physics.

Design and Test of a 0.5 THz Dipole Antenna With Integrated Schottky Diode Detector on a High Dielectric Constant Ceramic Electromagnetic Bandgap Substrate

This paper presents the first analysis of the input impedance and radiation properties of a dipole antenna, placed on top of Fan 's three-dimensional electromagnetic bandgap (EBG) structure, (Applied Physics Letters, 1994) constructed using a high dielectric constant ceramic. The best position of the dipole on the EBG surface is determined following impedance and radiation pattern analyses. Based on this optimum configuration an integrated Schottky heterodyne detector was designed, manufactured and tested from 0.48 to 0.52 THz. The main antenna features were not degraded by the high dielectric constant substrate due to the use of the EBG approach. Measured radiation patterns are in good agreement with the predicted ones.

3D reconstruction of complex dielectric function of the glass during the femtosecond micro-fabrication

We measure complex amplitude of scattered wave in the far field, and justify theoretically and numerically solution of the inverse scattering problem. This allows single-shot reconstructing of dielectric function distribution during direct femtosecond laser micro-fabrication.

3D Reconstruction of the complex dielectric function of glass during femtosecond laser micro-fabrication

We report on a new technique to reconstruct the 3D dielectric function change in transparent dielectric materials and the application of the technique for on-line monitoring of refractive index modification in BK7 glass during direct femtosecond laser microfabrication. The complex optical field scattered from the modified region is measured using two-beam, single-shot interferogram and the distribution of the modified refractive index is reconstructed by numerically solving the inverse scattering problem in Born approximation. The optical configuration suggested is further development of digital holographic microscopy (DHM). It takes advantage of high spatial resolution and almost the same optical paths for both interfering beams, and allows ultrafast time resolution.

3D reconstruction of complex dielectric function of the glass during the femtosecond micro-fabrication

We measure complex amplitude of scattered wave in the far field, and justify theoretically and numerically solution of the inverse scattering problem. This allows single-shot reconstructing of dielectric function distribution during direct femtosecond laser micro-fabrication.

3D reconstruction of the complex dielectric function of glass during femtosecond laser micro-fabrication

We report on a new technique to reconstruct the 3D dielectric function change in transparent dielectric materials and the application of the technique for on-line monitoring of refractive index modification in BK7 glass during direct femtosecond laser microfabrication. The complex optical field scattered from the modified region is measured using two-beam, single-shot interferogram and the distribution of the modified refractive index is reconstructed by numerically solving the inverse scattering problem in Born approximation. The optical configuration suggested is further development of digital holographic microscopy. It takes advantage of high spatial resolution and almost the same optical paths for both interfering beams, and allows ultrafast time resolution. © Springer Science+Business Media, LLC. 2011.

3D reconstruction of complex dielectric function of the glass during the femtosecond micro-fabrication

We measure complex amplitude of scattered wave in the far field, and justify theoretically and numerically solution of the inverse scattering problem. This allows single-shot reconstructing of dielectric function distribution during direct femtosecond laser micro-fabrication.

Assembly of a high-dielectric constant thin TiOX layer directly on H-terminated semiconductor diamond

A high-dielectric constant (high-k) TiOx thin layer was fabricated on hydrogen-terminated diamond (H-diamond) surface by low temperature oxidation of a thin titanium layer in ambient air. The metallic titanium layer was deposited by sputter deposition. The dielectric constant of the resultant TiOx was calculated to be around 12. The capacitance density of the metal-oxide-semiconductor (MOS) based on the TiOx/H-diamond was as high as 0.75 µF/cm2 contributed from the high-k value and the very thin thickness of the TiOx layer. The leakage current was lower than 10-13 A at reverse biases and 10-7A at the forward bias of -2 V. The MOS field-effect transistor based on the high-k TiOx/H-diamond was demonstrated. The utilization of the high-k TiOx with a very thin thickness brought forward the features of an ideally low subthreshold swing slope of 65 mV per decade and improved drain current at low gate voltages. The advantages of the utilization high-k dielectric for diamond MOSFETs are anticipated.

Electric-Field Dependence of the Effective Dielectric Constant in Graphene

Not Available

Exploration of Ground Penetrating Radar and Time Domain Reflectometry Methods for the Determination of Pavement Dielectric Constant

Traditionally, densities of newly built roadways are checked by direct sampling (cores) or by nuclear density gauge measurements. For roadway engineers, density of asphalt pavement surfaces is essential to determine pavement quality. Unfortunately, field measurements of density by direct sampling or by nuclear measurement are slow processes. Therefore, I have explored the use of rapidly-deployed ground penetrating radar (GPR) as an alternative means of determining pavement quality. The dielectric constant of pavement surface may be a substructure parameter that correlates with pavement density, and can be used as a proxy when density of asphalt is not known from nuclear or destructive methods. The dielectric constant of the asphalt can be determined using ground penetrating radar (GPR). In order to use GPR for evaluation of road surface quality, the relationship between dielectric constants of asphalt and their densities must be established. Field measurements of GPR were taken at four highway sites in Houghton and Keweenaw Counties, Michigan, where density values were also obtained using nuclear methods in the field. Laboratory studies involved asphalt samples taken from the field sites and samples created in the laboratory. These were tested in various ways, including, density, thickness, and time domain reflectometry (TDR). In the field, GPR data was acquired using a 1000 MHz air-launched unit and a ground-coupled unit at 200 and 500 MHz. The equipment used was owned and operated by the Michigan Department of Transportation (MDOT) and available for this study for a total of four days during summer 2005 and spring 2006. The analysis of the reflected waveforms included “routine” processing for velocity using commercial software and direct evaluation of reflection coefficients to determine a dielectric constant. The dielectric constants computed from velocities do not agree well with those obtained from reflection coefficients. Perhaps due to the limited range of asphalt types studied, no correlation between density and dielectric constant was evident. Laboratory measurements were taken with samples removed from the field and samples created for this study. Samples from the field were studied using TDR, in order to obtain dielectric constant directly, and these correlated well with the estimates made from reflection coefficients. Samples created in the laboratory were measured using 1000 MHz air-launched GPR, and 400 MHz ground-coupled GPR, each under both wet and dry conditions. On the basis of these observations, I conclude that dielectric constant of asphalt can be reliably measured from waveform amplitude analysis of GJPR data, based on the consistent agreement with that obtained in the laboratory using TDR. Because of the uniformity of asphalts studied here, any correlation between dielectric constant and density is not yet apparent.

Fluoreszenz und Lasertätigkeit in dünnen amorphen Schichten von Spirobifluorenderivaten

Es wurden die optischen Eigenschaften einiger Spirooligophenylverbindungen untersucht. Bei den Verbindungen handelte es sich um lineare und verzweigte Derivate des Spirobifluorens. Es wurden dünne amorphe Schichten der Verbindungen mittels spincoating und Vakuumverdampfen (OMBD) auf unterschiedlichen Substraten hergestellt. Mit spektroskopischer Ellipsometrie konnten die Schichtdicken und optische Konstanten der dünnen Schichten bestimmt werden. Dafür sind die Extinktionsspektren mit Tauc-Lorentz-Oszillatoren modelliert worden. Auf diese Weise ließen sich die optischen Konstanten der amorphen Filme besser beschreiben als mit den üblicherweise verwendeten Gauß-Oszillatoren. In dünnen Filmen von Spirosexiphenyl konnte uniaxiale Anisotropie nachgewiesen werden. Im Bereich der pie,pie*-Bande beträgt das Verhältnis des ordentlichen zum außerordentlichen Extinktionskoeffizienten 2.09. Mit einer Integrationskugel wurden die absoluten Quantenausbeuten der Fluoreszenz in festen Filmen bestimmt. Dafür ist ein vereinfachtes Verfahren der Auswertung entwickelt worden. Im Vergleich der untersuchten Substanzen zeigt sich, dass die Verbindungen mit dem Sexiphenyl-Chromophor höhere Quantenausbeuten im Festkörper haben (31 % - 48 %) als die Verbindungen mit Quaterphenyl als Chromophor (15 % - 30 %). In den beiden Klassen haben jeweils die sterisch anspruchsvollen Octopusvarianten die höchsten Festkörperquantenausbeuten. Durch verdünnen mit m,m-Spirosexiphenyl konnte die Quantenausbeute von p,p-Spirosexiphenyl in dünnen festen Filmen bis auf 65 % (95 % m,m- und 5 % p,p-Spirosexiphenyl) gesteigert werden. Eine Korrelation der Quantenausbeuten in Lösung und im festen, unverdünnten Film wurde nicht festgestellt. Als dünne Filme in Wellenleitergeometrie zeigen Spirooligophenyle bei optischer Anregung verstärkte spontane Emission (ASE). Dies manifestiert sich in einer Einengung des Emissionsspektrums mit zunehmender Pumpleistungsdichte. Auch für stimulierte Emission sind die Verbindungen mit Sexiphenylchromophor besser geeignet. Die niedrigste Schwelle in einer unverdünnten Reinsubstanz wurde mit 0.23 µJ/cm² in einer aufgeschleuderten Schicht Spirosexiphenyl gemessen. Auch 4-Spiro³, Spiro-SPO und Octo-2 zeigten niedrige ASE-Schwellen von 0.45 µJ/cm², 0.45 µJ/cm² und 0.5 µJ/cm². Die ASE-Schwellwerte von Spiroquaterphenyl und seinen beiden Derivaten Methoxyspiroquaterphenyl und Octo-1 sind mit 1.8 µJ/cm², 1.4 µJ/cm² und 1.2 µJ/cm² höher als die der Sexiphenylderivate. Im gemischten System aus m,m- und p,p-Spirosexiphenyl konnte die ASE-Schwelle noch weiter gesenkt werden. Bei einer Konzentration von 5 % p,p-Spirosexiphenyl wurde ein Schwellwert von nur 100 nJ/cm² bestimmt. Durch Dotierung mit unterschiedlichen Farbstoffen in Spirosexiphenyl als Matrix konnte ASE fast über den gesamten sichtbaren Spektralbereich gezeigt werden. Mit der „variable Streifenlänge“ (VSL-) -Methode wurden die pumpleistungsabhängigen Gainspektren dünner aufgedampfter Proben gemessen. Hieraus konnten die Wechselwirkungsquerschnitte der stimulierten Emission der Substanzen ermittelt werden. In Übereinstimmung mit den Verhältnissen bei den Festkörperfluoreszenzquantenausbeuten und den Schwellwerten der ASE sind auch bei den Gainkoeffizienten reiner Spirooligophenyle die besten Werte bei den Sexiphenylderivaten gefunden worden. Der Wirkungsquerschnitt der stimulierten Emission beträgt für Methylspiroquaterphenyl und Octo-1 ca. 1.8*10^-17 cm². Für Spiro-SPO und Spirosexiphenyl wurden Wirkungsquerschnitte von 7.5*10^-17 cm² bzw. 9.2*10^-17 cm² bestimmt. Noch etwas größer waren die Werte im gemischten System aus m,m- und p,p-Spirosexiphenyl (1.1*10^-16 cm²) und für DPAVB dotiert in Spirosexiphenyl (1.4*10^-16 cm²). Der höchste Maximalwert des Gainkoeffizienten von 328 cm-1 bei einer absorbierten Pumpenergiedichte von 149 µJ/cm² wurde mit Spirosexiphenyl erreicht. Abschließend wurden DFB-Laser-Strukturen mit reinen und dotierten Spirooligophenylverbindungen als aktiven Materialien vorgestellt. Mit Spiroterphenyl konnte ein DFB-Laser mit der bisher kürzesten Emissionswellenlänge (361.9 nm) in einem organischen Festkörperlaser realisiert werden. Mit reinen Spirooligophenylverbindungen und Mischungen daraus habe ich DFB-Lasing bei Wellenlängen zwischen 361.9 nm und 479 nm aufgezeigt. Durch Dotierung mit DPAVB wurde der Bereich der erreichbaren Wellenlängen bis 536 nm erweitert, bei gleichzeitiger Erniedrigung der Schwellenergiedichten für Lasertätigkeit. Bei Emissionswellenlängen von 495 nm bis 536 nm blieb die Laserschwelle zwischen 0.8 µJ/cm² und 1.1 µJ/cm². Diese Werte sind für DFB-Laser zweiter Ordnung sehr niedrig und geben Anlass zu glauben, dass sich mit DFB-Strukturen erster Ordnung Schwellen im Nanojoule Bereich erzielen lassen. Damit würde man den Bedingungen für elektrisch gepumpten Betrieb nahe kommen.

On the concept of electrical impedance for an electrolytic cell

The analysis of the electrical impedance of an electrolytic cell in the shape of a slab is performed. We have solved, numerically, the differential equations governing the phenomenon of the redistribution of the ions in the presence of an external electric field, and compared the results with the ones obtained by solving the linear approximation of these equations. The control parameters in our study are the amplitude and the frequency of the applied voltage, assumed a simple harmonic function of the time. We show that for the large amplitudes of the applied voltage, the actual current is no longer harmonic at low frequencies. From this result it follows that the concept of electrical impedance of a cell is a useful quantity only in the case where the linear approximation of the fundamental equations of problem work well.

Chromophore relaxation in a side-chain methacrylate copolymer functionalized with 4-[N-ethyl-N-(2-hydroxyethyl)]amino-2 '-chloro-4 '-nitroazobenzene

A side-chain methacrylate copolymer functionalized with the nonlinear optical chromophore 4-[N-ethyl-N-(2-hydroxyethyl)]amino-2'-chloro-4'-nitroazobenzene, disperse red-13, was prepared and characterized. The chromophore relaxation was investigated measuring the decay of the electrooptic coefficient r(13) and the complex dielectric constant at different temperatures. Results obtained below and above T-g were analyzed using the Kohlrausch-Williams-Watts(KWW) equation, through the study of the temperature dependence of the KWW parameters. Above T-g the relaxation time experimental data were fitted to the Williams-Landel-Ferry (WLF) equation and its parameters determined. Chromophore relaxation leading to the decrease of electrooptic properties was found associated with a primary alpha relaxation. The obtained WLF equation parameters were introduced into the Adam-Gibbs-Tool-Narayanaswamy-Moynihan equation, and the overall relaxation time temperature dependence was successfully obtained in terms of the fictive temperature, accounting for the sample thermal treatment and allowing optimized thermal treatment to be found. The copolymer KWW stretching parameter at the glass transition temperature lies close to the limit value for short-range interactions, i.e., 0.6, suggesting that the chromophore group is participating in primary a relaxation.