An Advanced Gate Driver for Insulated Gate Bipolar Transistors to Eliminate Dead-time Induced Distortions in Inverter Output

Dead-time is introduced between the gating signals to the top and bottom switches in a voltage source inverter (VSI) leg, to prevent shoot through fault due to the finite turn-off times of IGBTs. The dead-time results in a delay when the incoming device is an IGBT, resulting in error voltage pulses in the inverter output voltage. This paper presents the design, fabrication and testing of an advanced gate driver, which eliminates dead-time and consequent output distortion. Here, the gating pulses are generated such that the incoming IGBT transition is not delayed and shoot-through is also prevented. The various logic units of the driver card and fault tolerance of the driver are verified through extensive tests on different topologies such as chopper, half-bridge and full-bridge inverter, and also at different conditions of load. Experimental results demonstrate the improvement in the load current waveform quality with the proposed circuit, on account of elimination of dead-time.

Comparative switching behaviour of silicon transistors and practical silicon carbide transistors

The motivation for our work is to identify a space for silicon carbide (SiC) devices in the silicon (Si) world. This paper presents a detailed experimental investigation of the switching behaviour of silicon and silicon carbide transistors (a JFET and a cascode device comprising a Si-MOSFET and a SiC-JFET). The experimental method is based on a clamped inductive load chopper circuit that puts considerable stress on the device and increases the transient power dissipation. A precise comparison of switching behaviour of Si and SiC devices on similar terms is the novelty of our work. The cascode is found to be an attractive fast switching device, capable of operating in two different configurations whose switching equivalent circuits are proposed here. The effect of limited dv/dt of the Si-MOSFET on the switching of the SiC-JFET in a cascode is also critically analysed.

Series-connected IGBTs using active voltage control technique

With series insulated-gate bipolar transistor (IGBT) operation, well-matched gate drives will not ensure balanced dynamic voltage sharing between the switching devices. Rather, it is IGBT parasitic capacitances, mainly gate-to-collector capacitance Cgc, that dominate transient voltage sharing. As Cgc is collector voltage dependant and is significantly larger during the initial turn-off transition, it dominates IGBT dynamic voltage sharing. This paper presents an active control technique for series-connected IGBTs that allows their dynamic voltage transition dV\ce/dt to adaptively vary. Both switch ON and OFF transitions are controlled to follow a predefined dVce/dt. Switching losses associated with this technique are minimized by the adaptive dv /dt control technique incorporated into the design. A detailed description of the control circuits is presented in this paper. Experimental results with up to three series devices in a single-ended dc chopper circuit, operating at various low voltage and current levels, are used to illustrate the performance of the proposed technique. © 2012 IEEE.

IGBT converters conducted EMI analysis by controlled multiple-slope switching waveform approximation

IGBTs realise high-performance power converters. Unfortunately, with fast switching of the IGBT-free wheel diode chopper cell, such circuits are intrinsic sources of high-level EMI. Therefore, costly EMI filters or shielding are normally needed on the load and supply side. In order to design these EMI suppression components, designers need to predict the EMI level with reasonable accuracy for a given structure and operating mode. Simplifying the transient IGBT switching current and voltage into a multiple slope switching waveform approximation offers a feasible way to estimate conducted EMI with some accuracy. This method is dependent on the availability of high-fidelity measurements. Also, that multiple slope approximation needs careful and time-costly IGBT parameters optimisation process to approach the real switching waveform. In this paper, Active Voltage Control Gate Drive(AVC GD) is employed to shape IGBT switching into several defined slopes. As a result, Conducted EMI prediction by multiple slope switching approximation could be more accurate, less costly but more friendly for implementation. © 2013 IEEE.

Shaping pulse transitions by active voltage control for reduced EMI generation

High-performance power switching devices (IGBT/MOSFET) realise high-performance power converters. Unfortunately, with a high switching speed of the IGBT or MOSFET freewheel diode chopper cell, the circuit has intrinsic sources of high-level EMI. Therefore, costly EMI filters or shielding are normally demanded on the load and supply side. Although an S-shaped voltage transient with a high order of derivation eliminates the discontinuity and could suppress HF spectrum of EMI emissions, a practical control scheme is still under development. In this paper, Active Voltage Control (AVC) is applied to successfully define IGBT switching dynamics with a smoothed Gaussian waveform so a reduced EMI can be achieved without extra EMI suppression devices. © 2013 IEEE.

Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE

Interdigital metal-semiconductor-metal (MSM) ultraviolet photoconductive detectors have been fabricated on undoped GaN films grown by molecular beam epitaxy (MBE), Response dependence on wavelength, applied current, excitation powers and chopper frequency has been extensively investigated. It is shown that the photodetector's spectral response remained nearly constant for wavelengths above the band gap and dropped sharply by almost three orders of magnitude for wavelengths longer than the band gap. It increases linearly with the applied constant current, but very nonlinearly with illuminating power. The photodetectors showed high photoconductor gains resulting from trapping of minority carriers (holes) at acceptor impurities or defects. The results demonstrated the high quality of the GaN crystal used to fabricate these devices. (C) 2000 Elsevier Science B.V. All rights reserved.

COM组件技术在CSR控制系统中的应用

HIRFL-CSR（兰州重离子冷却储存环）是国家重点实验室之一。CSR控制系统是保证CSR正常运行的重要环节。这样一个大型的控制系统，是由多个子系统分别构成的。在CSR的控制方案中，允许用户通过访问web浏览器并利用COM技术来控制设备和获知设备的当前运行情况。本文描述了一个典型子系统中设备控制的实现。并介绍了COM更高层次的应用，即DCOM技术在分布式领域的应用。一本文首先介绍了Windows编程，Win32应用程序等一些基本的编程知识，并且简单介绍了开发COM组件的开发工具ATL和COM组件的基本概念。其次，介绍了一个具体子系统的软件结构和整体设计。最后详细介绍了DCOM技术的基本结构，和它所提供的一些系统服务。整个论文的工作介绍了CSR控制子系统中COM组件技术的选择理由，并完成了COM组件的程序设计和软件调试。还为以后开发和实现分布式控制系统的控制组件提供了理论基础知识。

Photoacoustic investigation of the optical and thermal properties of selected amorphous chalcogenide semiconductors

This thesis work has mainly concentrated on the investigation of the ,optical and thermal properties of binary semiconducting chalcogenide glasses belonging to the AivB¥5x and AZBXEX families. The technique used for these studies is a relatively new one namely, the photoacoustic (PA) technique. This technique is based on the detection of acoustic signal produced in an enclosed volume when the sample is irradiated by an intensity modulated radiation. The signal produced depends upon the optical properties of the sample, and the thermal properties of the sample, backing material and the surrounding gas. For the present studies an efficient signal beam gas-microphone PA spectrometer, consisting of a high power Xenon lamp, monochromator, light beam chopper, PA cell with microphone and lock-in amplifier, has been set up. Two PA cells have been fabricated: one for room temperature measurements and another for measurements at high temperatures. With the high temperature PA cell measurements can be taken upto 250°C. Provisions are incorporated. in both the cells to change the volume and to use different backing materials for the sample. The cells have been calibrated by measuring the frequency response of the cells using carbon black as the sample

DC Motor Speed Control via Fuzzy / Pole Placement / PI Controller

This report presents a new way of control engineering. Dc motor speed controlled by three controllers PID, pole placement and Fuzzy controller and discusses the advantages and disadvantages of each controller for different conditions under loaded and unloaded scenarios using software Matlab. The brushless series wound Dc motor is very popular in industrial application and control systems because of the high torque density, high efficiency and small size. First suitable equations are developed for DC motor. PID controller is developed and tuned in order to get faster step response. The simulation results of PID controller provide very good results and the controller is further tuned in order to decrease its overshoot error which is common in PID controllers. Further it is purposed that in industrial environment these controllers are better than others controllers as PID controllers are easy to tuned and cheap. Pole placement controller is the best example of control engineering. An addition of integrator reduced the noise disturbances in pole placement controller and this makes it a good choice for industrial applications. The fuzzy controller is introduce with a DC chopper to make the DC motor speed control smooth and almost no steady state error is observed. Another advantage is achieved in fuzzy controller that the simulations of three different controllers are compared and concluded from the results that Fuzzy controller outperforms to PID controller in terms of steady state error and smooth step response. While Pole placement controller have no comparison in terms of controls because designer can change the step response according to nature of control systems, so this controller provide wide range of control over a system. Poles location change the step response in a sense that if poles are near to origin then step response of motor is fast. Finally a GUI of these three controllers are developed which allow the user to select any controller and change its parameters according to the situation.

Desempenho de uma semeadora-adubadora direta, em função da velocidade de eslocamento e do tipo de manejo da biomassa da cultura de cobertura do solo

O objetivo do presente trabalho foi estudar o desempenho de uma semeadora-adubadora, operando em duas velocidades sobre a palhada da cultura do milheto (Pennisetum glaucum (L.) R. Brown), após diferentes manejos, na semeadura direta da cultura da soja (Glycine Max L.). O experimento foi realizado com seis tratamentos, em esquema fatorial, delineados em blocos ao acaso, com quatro repetições. Os tratamentos combinaram três manejos (triturador de palhas tratorizado, rolo- faca e herbicida) com duas velocidades de deslocamento da semeadora-adubadora (5,2 e 7,3 km h-1). Foram analisadas as seguintes variáveis: acúmulo e decomposição de massa seca do milheto, índice de emergência da cultura da soja, uniformidade de distribuição longitudinal de sementes, capacidade de campo efetiva da semeadora-adubadora e produtividade da soja. Os resultados mostraram que não houve diferença na decomposição da massa de milheto após os manejos e que esses, juntamente com a velocidade de deslocamento do conjunto trator-semeadora-adubadora, não influenciaram no número de dias para a emergência das plântulas de soja e na distribuição longitudinal das sementes. A capacidade de campo efetiva da semeadora-adubadora foi maior na velocidade mais alta. O rendimento de grãos não diferiu significativamente nos tratamentos estudados.

Isolamento e caracterização ultraestrutural de folículos pré-antrais de vacas da raça Nelore (Bos taurus indicus)

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Fermentation and epiphytic microflora dynamics in sugar cane silage

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

A new technique for thermal neutron detection using pyroelectric ceramics

In this article a new technique for thermal neutron detection using pyroelectric ceramics is described. The detector system is basically constituted of a PZT (lead zirconate titanate) ceramic attached to an uranium disk. The energy released in the uranium fission gives rise to an electrical signal in the detector which is amplified by a lock-in system. The neutron beam impinging on the uranium disk was modulated with a cadmium chopper. Thermal neutron fluxes within the interval of 103 to 106 n/cm2 s have been detected using a U3O8 pellet with 20% enrichment in 235U. © 1992.

Two thermal methods to measure the energy fluence of a brief exposure of diagnostic x rays

This paper describes two simple thermal methods for measuring the energy fluence in J/cm 2 from a diagnostic x-ray exposure. Both detectors absorb essentially 100% of the radiation and give a signal that is directly proportional to the energy fluence of the x-ray beam. One detector measures the thermal effect when a pulse of x rays is totally absorbed in the pyroelectric detector of lead-zirconium-titanate (PZT). The other detector measures the expansion of a gas surrounding a lead disk detector in a photoacoustic chamber. The increased pressure of the gas is transmitted through a 1-mm duct to a sensitive microphone. Both detectors have previously been used to measure the energy fluence rate of continuous x-ray beams in the same energy region using a chopped beam and a lock-in amplifier. Measurement of the energy fluence of a pulse of radiation eliminates the need for the beam chopper and lock-in amplifier and results in a simple, rugged, and inexpensive dosimeter. Either method can be combined with the area of the beam to give an estimate of the imparted energy to the patient from a diagnostic x-ray exposure.

Efeito dos sistemas de manejo do solo e da cobertura de entressafra na cultura da soja (Glycine max L.)

Pós-graduação em Agronomia (Energia na Agricultura) - FCA