Structural electrical and optical properties of undoped and indium doped ZnO thin films prepared by the pyrosol process at different temperatures

The influence of the substrate temperature on the structural features and opto-electrical properties of undoped and indium-doped ZnO thin films deposited by pyrosol process was investigated. The addition of indium induces a drastic decrease (by a factor approximate to 10(10) for samples deposited at 300 degreesC) in the electrical resistivity of films, the lowest electrical resistivity (6 mOmega-cm) being observed for the film deposited at 450 degreesC. Films are highly transparent (>80%) in the Vis-NIR ranges, and the optical band gap exhibits a blue shift (from 3.29 to 3.33 eV) for the In-doped films deposited at increasing temperature. Preferential orientation of the ZnO crystallites with the c-axis perpendicular to the substrate surface and an anisotropic morphology of the nanoporous structure was observed for films growth at 300 and 350 degreesC. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Transparent and conductive ZnO : Al thin films prepared by sol-gel dip-coating

Aluminum doped zinc oxide polycrystalline thin films (AZO) were prepared by sol-gel dip-coating process. The sol was prepared from an ethanolic solution of zinc acetate using lithium hydroxide or succinic acid as hydrolytic catalyst. The quantity of aluminum in the sol was varied from 1 to 10 mol%. The structural characteristics studied by X-ray diffractometry were complemented by resistivity measurements and UV-Vis-NIR spectroscopy. The films are transparent from the near ultraviolet to the near infrared, presenting an absorption cut-off at almost 290 nm, irrespective of the nature of the catalyst and doping level. The best conductors were obtained for the AZO films containing 3 mol% of aluminum, prepared under acidic and basic catalysis and sintered at 450 degreesC. Their optical band-gap of 4.4 eV calculated from the absorption cut-off is larger than the values for band-gap widening predicted by the standard model for polar semiconductors. These polycrystalline films are textured with preferential orientation of grains along the wurtzite c-axis or the (100) direction. (C) 2003 Elsevier Ltd. All rights reserved.

Morphological and electrical evolution of ZnO:Al thin films deposited by rf magnetron sputtering onto glass substrates

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Host-guest interactions between xanthones and water: the role of O-H center dot center dot center dot O, C-H center dot center dot center dot O, and pi center dot center dot center dot pi contacts in the channel- and cage-type frameworks

In this article were studied two xanthone derivatives known as 1,5-dihydroxy-8-methoxyxanthone (I) and 1,3,7-trihydroxy-8-methoxyxanthone (II), which show one water molecule into their crystal structures. In xanthone I, there are water wires contributing to build up channel-like cavities along the c axis, whereas in xanthone II the water is surrounded by three xanthone molecules forming a cage-type structure. The geometries of I and II were optimized using the density functional theory method with B3LYP functional, and the results were compared with crystal structure. Both theoretical and experimental investigations reveal a concordance between structural parameters, with the xanthone core presenting an almost flat conformation and substituents adopting the more stable orientations. In the two compounds, the hydroxyl group linked at position 1 is involved in a resonance-assisted hydrogen bond with the carbonyl group. Besides, the supramolecular arrangement of the host/guest systems are stabilized mainly by classical intermolecular hydrogen bonds (O-H center dot center dot center dot O) involving xanthone-to-water and xanthone-to-xanthone. In addition, C-H center dot center dot center dot O weak hydrogen bonds, as well as pi-pi interactions play an important role to stabilize the crystal self-assembly of xanthones I and II. The results reported here underline the role of inclusion of water molecules and their different arrangement into the crystal structure of two xanthone host/guest systems.

Präparation, Charakterisierung und elektronische Eigenschaften von dünnen Schichten des Hochtemperatursupraleiters HgReBa 2 Ca n-1 Cu n O y

Ziel dieser Arbeit war die Pr"{a}paration, Charakterisierung und Untersuchung der elektronischen Eigenschaften von d"{u}nnen Schichten des Hochtemperatursupraleiters HgReBa$_{2}$Ca$_{n-1}$Cu$_{n}$O$_{y}$, die mittels gepulster Laser-Deposition hergestellt wurden. Die HgRe1212-Filme zeigen in der AC-Suszeptibilit"{a}t einen scharfen "{U}bergang in die supraleitende Phase bei 124 K mit einer "{U}bergangsbreite von 2 K. Die resistiven "{U}berg"{a}nge der Proben wurden mit zunehmender St"{a}rke des externen Magnetfeldes breiter. Aus der Steigung der Arrheniusplots konnte die Aktivierungsenergie f"{u}r verschiedene Feldst"{a}rken bestimmt werden. Weiterhin wurde die Winkelabh"{a}ngigkeit des Depinning-Feldes $B_{dp}(theta)$ der Filme gemessen. Hieraus wurde ein Anisotropiewert von $gamma$ = 7.7 bei 105 K ermittelt. Dies ist relevant, um den f"{u}r Anwendungen wichtigen Bereich im $T$-$B$-$theta$-Phasenraum des Materials absch"{a}tzen zu k"{o}nnen. Die kritische Stromdichte $J_{c}$ der d"{u}nnen Filme aus HgRe-1212 wurde mit Hilfe eines SQUID-Magnetometers gemessen. Die entsprechenden $M$-$H$ Kurven bzw. das magnetische Moment dieser Filme wurde f"{u}r einen weiten Temperatur- und Feldbereich mit einem magnetischen Feld senkrecht zum Film aufgenommen. F"{u}r einen HgRe-1212-Film konnte bei 5 K eine kritische Stromdichte von 1.2 x 10$^{7}$ A/cm$^{2}$ und etwa 2 x 10$^{6}$ A/cm$^{2}$ bei 77 K ermittelt werden. Es wurde die Magnetfeld- und die Temperaturabh"{a}ngigkeit des Hall-Effekts im normalleitenden und im Mischzustand in Magnetfeldern senkrecht zur $ab$-Ebene bis zu 12 T gemessen. Oberhalb der kritischen Temperatur $T_{c}$ steigt der longitudinale spezifische Widerstand $rho_{xx}$ linear mit der Temperatur, w"{a}hrend der spezifische Hall-Widerstand $rho_{yx}$ sich umgekehrt proportional zur Temperatur "{a}ndert. In der N"{a}he von $T_{c}$ und in Feldern kleiner als 3 T wurde eine doppelte Vorzeichen"{a}nderung des spezifischen Hall-Widerstandes beobachtet. Der Hall-Winkel im Normalzustand, cot $theta_{H}= alpha T^{2} + beta$, folgt einer universellen $textit{T }^{2}$-Abh"{a}ngigkeit in allen magnetischen Feldern. In der N"{a}he des Nullwiderstand-Zustandes h"{a}ngt der spezifische Hall-Widerstand $rho_{yx}$ "{u}ber ein Potenzgesetz mit dem longitudinalen Widerstand $rho_{xx}$ zusammen. Das Skalenverhalten zwischen $rho_{yx}$ und $rho_{xx}$ weist eine starke Feld-Abh"{a}ngigkeit auf. Der Skalenexponent $beta$ in der Gleichung $rho_{yx}$ =A $rho_{xx}^{beta}$ steigt von 1.0 bis 1.7, w"{a}hrend das Feld von 1.0 bis 12 T zunimmt.

Wet and dry resistivities along three orthogonal directions of ODP Holes 185-801C and 185-1149B

The results of shore-based three-axis resistivity and X-ray computed tomography (CT) measurements on cube-shaped samples recovered during Leg 185 are presented along with moisture and density, P-wave velocity, resistivity, and X-ray CT measurements on whole-round samples of representative lithologies from Site 1149. These measurements augment the standard suite of physical properties obtained during Leg 185 from the cube samples and samples obtained adjacent to the cut cubes. Both shipboard and shore-based measurements of physical properties provide information that assists in characterizing lithologic units, correlating cored material with downhole logging data, understanding the nature of consolidation, and interpreting seismic reflection profiles.

Electrical investigation of p-type 4H-SiC heavily doped by ion implantation

In the last decades, an increasing interest in the research field of wide bandgap semiconductors was observed, mostly due to the progressive approaching of silicon-based devices to their theoretical limits. 4H-SiC is an example among these, and is a mature compound for applications. The main advantages offered 4H-SiC in comparison with silicon are an higher breakdown field, an higher thermal conductivity, a higher operating temperature, very high hardness and melting point, biocompatibility, but also low switching losses in high frequencies applications and lower on-resistances in unipolar devices. Then, 4H-SiC power devices offer great performance improvement; moreover, they can work in hostile environments where silicon power devices cannot function. Ion implantation technology is a key process in the fabrication of almost all kinds of SiC devices, owing to the advantage of a spatially selective doping. This work is dedicated to the electrical investigation of several differently-processed 4H-SiC ion- implanted samples, mainly through Hall effect and space charge spectroscopy experiments. It was also developed the automatic control (Labview) of several experiments. In the work, the effectiveness of high temperature post-implant thermal treatments (up to 2000°C) were studied and compared considering: (i) different methods, (ii) different temperatures and (iii) different duration of the annealing process. Preliminary p + /n and Schottky junctions were also investigated as simple test devices. 1) Heavy doping by ion implantation of single off-axis 4H-SiC layers The electrical investigation is one of the most important characterization of ion-implanted samples, which must be submitted to mandatory post-implant thermal treatment in order to both (i) recover the lattice after ion bombardment, and (ii) address the implanted impurities into lattice sites so that they can effectively act as dopants. Electrical investigation can give fundamental information on the efficiency of the electrical impurity activation. To understand the results of the research it should be noted that: (a) To realize good ohmic contacts it is necessary to obtain spatially defined highly doped regions, which must have conductivity as low as possible. (b) It has been shown that the electrical activation efficiency and the electrical conductivity increase with the annealing temperature increasing. (c) To maximize the layer conductivity, temperatures around 1700°C are generally used and implantation density high till to 10 21 cm -3 . In this work, an original approach, different from (c), is explored by the using very high annealing temperature, around 2000°C, on samples of Al + -implant concentration of the order of 10 20 cm -3 . Several Al + -implanted 4H-SiC samples, resulting of p-type conductivity, were investigated, with a nominal density varying in the range of about 1-5∙10 20 cm -3 and subjected to two different high temperature thermal treatments. One annealing method uses a radiofrequency heated furnace till to 1950°C (Conventional Annealing, CA), the other exploits a microwave field, providing a fast heating rate up to 2000°C (Micro-Wave Annealing, MWA). In this contest, mainly ion implanted p-type samples were investigated, both off-axis and on-axis <0001> semi-insulating 4H-SiC. Concerning p-type off-axis samples, a high electrical activation of implanted Al (50-70%) and a compensation ratio below 10% were estimated. In the work, the main sample processing parameters have been varied, as the implant temperature, CA annealing duration, and heating/cooling rates, and the best values assessed. MWA method leads to higher hole density and lower mobility than CA in equivalent ion implanted layers, resulting in lower resistivity, probably related to the 50°C higher annealing temperature. An optimal duration of the CA treatment was estimated in about 12-13 minutes. A RT resistivity on the lowest reported in literature for this kind of samples, has been obtained. 2) Low resistivity data: variable range hopping Notwithstanding the heavy p-type doping levels, the carrier density remained less than the critical one required for a semiconductor to metal transition. However, the high carrier densities obtained was enough to trigger a low temperature impurity band (IB) conduction. In the heaviest doped samples, such a conduction mechanism persists till to RT, without significantly prejudice the mobility values. This feature can have an interesting technological fall, because it guarantee a nearly temperature- independent carrier density, it being not affected by freeze-out effects. The usual transport mechanism occurring in the IB conduction is the nearest neighbor hopping: such a regime is effectively consistent with the resistivity temperature behavior of the lowest doped samples. In the heavier doped samples, however, a trend of the resistivity data compatible with a variable range hopping (VRH) conduction has been pointed out, here highlighted for the first time in p-type 4H-SiC. Even more: in the heaviest doped samples, and in particular, in those annealed by MWA, the temperature dependence of the resistivity data is consistent with a reduced dimensionality (2D) of the VRH conduction. In these samples, TEM investigation pointed out faulted dislocation loops in the basal plane, whose average spacing along the c-axis is comparable with the optimal length of the hops in the VRH transport. This result suggested the assignment of such a peculiar behavior to a kind of spatial confinement into a plane of the carrier hops. 3) Test device the p + -n junction In the last part of the work, the electrical properties of 4H-SiC diodes were also studied. In this case, a heavy Al + ion implantation was realized on n-type epilayers, according to the technological process applied for final devices. Good rectification properties was shown from these preliminary devices in their current-voltage characteristics. Admittance spectroscopy and deep level transient spectroscopy measurements showed the presence of electrically active defects other than the dopants ones, induced in the active region of the diodes by ion implantation. A critical comparison with the literature of these defects was performed. Preliminary to such an investigation, it was assessed the experimental set up for the admittance spectroscopy and current-voltage investigation and the automatic control of these measurements.

Determinação do estado fundamental de compostos antiferromagnéticos da série Tb(1-x)Y(x)RhIn(5): aproximação teórico experimental

We present the results of electrical resistivity, magnetic susceptibility, specific heat and x-ray absorption spectroscopy measurements in Tb1−xYxRhIn5 (x = 0.00, 0.15, 0.4.0, 0.50 e 0.70) single crystals. Tb1−xYxRhIn5 is an antiferromagnetic AFM compound with ordering temperature TN ≈ 46 K, the higher TN within the RRhIn5 serie (R : rare earth). We evaluate the physical properties evolution and the supression of the AFM state considering doping and Crystalline Electric Field (CEF) effects on magnetic exchange interaction between Tb3+ magnetic ions. CEF acts like a perturbation potential, breaking the (2J + 1) multiplet s degeneracy. Also, we studied linear-polarization-dependent soft x-ray absorption at Tb M4 and M5 edges to validate X-ray Absorption Spectroscopy as a complementary technique in determining the rare earth CEF ground state. Samples were grown by the indium excess flux and the experimental data (magnetic susceptibility and specific heat) were adjusted with a mean field model that takes account magnetic exchange interaction between first neighbors and CEF effects. XAS experiments were carried on Total Electron Yield mode at Laborat´onio Nacional de Luz S´ıncrotron, Campinas. We measured X-ray absorption at Tb M4,5 edges with incident polarized X-ray beam parallel and perpendicular to c-axis (E || c e E ⊥ c). The mean field model simulates the mean behavior of the whole system and, due to many independent parameters, gives a non unique CEF scheme. XAS is site- and elemental- specific technique and gained the scientific community s attention as complementary technique in determining CEF ground state in rare earth based compounds. In this work we wil discuss the non conclusive results of XAS technique in TbRhIn5 compounds.

Magnetoelectric effects in an organometallic quantum magnet

Metal-organic materials constitute a new field in which to search for ferroelectricity and coupling between electricity and magnetism. We observe a magnetic field-induced change in the electric polarization, Delta P(H), that reaches 50 mu C/m(2) in single crystals of NiCl(2)-4SC(NH(2))(2) (DTN). DTN forms a tetragonal structure that breaks inversion symmetry with the electrically polar thiourea molecules [SC(NH(2))] all tilted in the same direction along the c axis. The field H induces canted antiferromagnetism of the Ni S = 1 spins between 2 and 12 T and our measurements show that the electric polarization increases monotonically in this range, saturating above 12 T. By modeling the microscopic origin of this magnetoelectric effect, we find that the leading contribution to Delta P comes from the change in the crystal electric field, with a smaller contribution from magnetic exchange striction. The finite value of Delta P induced by magnetostriction results from the polar nature of the thiourea molecules bonded to the Ni atoms, and it is amplified by the softness of these organic molecules.

Lupeol

The title compound [systematic name: 3 beta-lup-20(29)-en-3-ol], C(30)H(50)O, was isolated from the leaves of Garcinia brasiliensis (common name: bacupari; a member of the Guttiferae family) and has been shown to have many useful medicinal and biological properties. The lupeol molecule consists of four six-membered rings (adopting chair conformations) and one five-membered ring (with an envelope conformation), all fused in trans fashion. Lupeol is isomorphic with the pentacyclic triterpene 3 beta,30-dihydroxylup-20(29)-ene, which differs from lupeol due to the presence of an additional hydroxy group. The crystal packing is stabilized by van der Waals interactions and intermolecular O-H center dot center dot center dot O hydrogen bonds, giving rise to an infinite helical chain along the c axis.

N-(2-furylcarbonyl)piperidine-1-carbothioamide

The title compound, C11H14N2O2S, was synthesized from furoyl isothiocyanate and piperidine in dry acetone. The thiourea group is in the thioamide form. The thiourea group makes a dihedral angle of 53.9 (1)degrees with the furan carbonyl group. In the crystal structure, molecules are linked by intermolecular N-H center dot center dot center dot O hydrogen bonds, forming one-dimensional chains along the c axis. An intramolecular N-H center dot center dot center dot O hydrogen bond is also present.

Angular dependence of the thermal-lens effect on LiSrAlF(6) and LiSrGaF(6) single crystals

We apply thermal-lens (TL) spectrometry to measure the angular dependence of the TL effect on colquiriite single crystals. The experiments were performed with LiSrAlF(6) and LiSrGaF(6) using a two-beam mode-mismatched configuration. The results show that it is possible to minimize the TL effect by selecting the appropriate crystal orientation. Our data also show that the anisotropy of the linear thermal expansion coefficient drives the amplitude of the TL effect, including the inversion from focusing to defocusing as the crystal orientation angle tends to the c-axis direction. The results may be useful for those working to develop a high-power laser using LiSrAlF(6)(:Cr) and LiSrGaF(6)(:Cr) single crystals, allowing for optimization of the designed laser cavity. (C) 2008 Optical Society of America.

(4-Hydroxy-2,5-dimethylphenyl)phenylmethanone

The title compound, C(15)H(14)O(2), was obtained by Friedel-Crafts acylation between 2,5-dimethylphenol and benzoyl chloride in the presence of aluminium chloride as a catalyst. The dihedral angle between the benzene rings is 61.95 (4)degrees. In the crystal, O-H center dot center dot center dot O hydrogen bonding and C-H center dot center dot center dot O weak interactions lead to polymeric C(6), C(8) and C(11) chains along the a, b and c-axis directions, respectively.

Thermal expansion of the V(5)Si(3) and T(2) phases of the V-Si-B system investigated by high-temperature X-ray diffraction

The thermal expansion anisotropy of the V(5)Si(3) and T(2)-phase of the V-Si-B system were determined by high-temperature X-ray diffraction from 298 to 1273 K. Alloys with nominal compositions V(62.5)Si(37.5) (V5Si3 phase) and V(63)Si(12)B(25) (T(2)-phase) were prepared from high-purity materials through arc-melting followed by heat-treatment at 1873 K by 24 h, under argon atmosphere. The V(5)Si(3) phase exhibits thermal expansion anisotropy equals to 1.3, with thermal expansion coefficients along the a and c-axis equal to 9.3 x 10(-6) K(-1) and 11.7 x 10(-6) K(-1), respectively. Similarly, the thermal expansion anisotropy value of the T(2)-phase is 0.9 with thermal expansion coefficients equal to 8.8 x 10(-6) K(-1) and 8.3 x 10(-6) K(-1) along the, a and c-axis respectively. Compared to other isostructural silicides of the 5:3 type and the Ti(5)Si(3) phase, the V(5)Si(3) phase presents lower thermal expansion anisotropy. The T(2)-phase present in the V-Si-B system exhibits low thermal expansion anisotropy, as the T(2)-phase of the Mo-Si-B, Nb-Si-B and W-Si-B systems. (C) 2009 Elsevier Ltd. All rights reserved.

Internal Residual Stresses in Sintered and Commercial Low Expansion Li(2)O-Al(2)O(3)-SiO(2) Glass-Ceramics

We performed Synchrotron X-ray diffraction (XRD) analyses of internal residual stresses in monolithic samples of a newly developed Li(2)O-Al(2)O(3)-SiO(2) (LAS) glass-ceramic produced by sintering and in a commercial LAS glass-ceramic, CERAN (R), produced by the traditional crystal nucleation and growth treatments. The elastic constants were measured by instrumented indentation and a pulse-echo technique. The thermal expansion coefficient of virgilite was determined by high temperature XRD and dilatometry. The c-axis contracts with the increasing temperature whereas the a-axis does not vary significantly. Microcracking of the microstructure affects the thermal expansion coefficients measured by dilatometry and thermal expansion hysteresis is observed for the sintered glass-ceramic as well as for CERAN (R). The measured internal stress is quite low for both glass-ceramics and can be explained by theoretical modeling if the high volume fraction of the crystalline phase (virgilite) is considered. Using a modified Green model, the calculated critical (glass) island diameter for spontaneous cracking agreed with experimental observations. The experimental data collected also allowed the calculation of the critical crystal grain diameters for grain-boundary microcracking due to the anisotropy of thermal expansion of virgilite and for microcracking in the residual glass phase surrounding the virgilite particles. All these parameters are important for the successful microstructural design of sintered glass-ceramics.