Irving langmuir: o milagre da ciência

Irving Langmuir received the Nobel Prize in Chemistry in 1932 "...for his outstanding discoveries and investigations within the field of surface chemistry", according to the Swedish Academy. However, few people know that his work comprises other very important contributions, and not only for chemistry, such as the discovery of plasma, the atomic hydrogen, the pure thermoionic phenomenon, the development of the cloud seeding technique for weather modification, among many others. This paper summarizes Langmuir's most important discoveries and theories, with an especial mention for his practical inventions and his work on the atomic theory.

Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.

UV optical absorption spectra analysis of beryl crystals from Brazil

The spectral decomposition analysis was applied to the optical absorption spectra of green and colorless beryl crystals from the Brazilian Eastern Pegmatitic province in the natural state, Submitted to heat treatment and irradiated with UV light The attributions of the lines were made taking into account highly accurate quantum mechanical calculations The deconvolution of the green beryl spectra revealed four lines, two of them around 12,000 cm(-1) (1 5eV) and two of them around 34,000 cm(-1) (4.2 eV) attributed to Fe(2+) and Fe(3+), respectively The deconvolution of the colorless beryl spectra without any treatment, after heating and for the same heat treatment followed by UV light irradiation revealed five lines The analysis of ratio relations showed that the lines at 36,400 cm(-1) (4.5 eV) and 41,400 cm(-1) (5 1 eV) belongs to a single defect attributed to a silicon dangling bond defect (=Si). Discussions and comparison with reported defects in quartz have supported the allocation of the lines at 61,000 cm(-1) (7.6 eV) and 43,800 cm(-1) (5 4 eV) to diamagnetic oxygen vacancy defect ( Si-Si ) and unrelaxed ( Si Si ) defect, respectively Finally, the line at 39.100 cm(-1) (4.8 eV), quite polarized along the c-axis, was attributed to a (Fe(2+) OH(-)) defect in the structural channels (C) 2009 Elsevier B V All rights reserved

Source of slow lithium atoms from Ne or H-2 matrix isolation sublimation

We have studied, via laser absorption spectroscopy, the velocity distribution of Li-7 atoms released from cryogenic matrices of solid neon or molecular hydrogen. The Li atoms are implanted into the Ne or H-2 matrices - grown onto a sapphire substrate - by laser ablation of a solid Li or LiH precursor. A heat pulse is then applied to the sapphire substrate sublimating the matrix together with the isolated atoms. With a NiCr film resistor deposited directly onto the sapphire substrate we are able to transfer high instantaneous power to the matrix, thus reaching a fast sublimation regime. In this regime the Li atoms can get entrained in the released matrix gas, and we were also able to achieve matrix sublimation times down to 10 mu s for both H-2 or Ne matrix, enabling us to proceed with the trapping of the species of our interest such as atomic hydrogen, lithium, and molecules. The sublimation of the H-2 matrix, with its large center-of-mass velocity, provides evidence for a new regime of one-dimensional thermalization. The laser ablated Li seems to penetrate the H-2 matrix deeper than it does in Ne. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704125]

Impact of metal-organic vapor phase epitaxy environment on silicon bulk lifetime for III–V-on-Si multijunction solar cells

With the final goal of integrating III-V materials on silicon substrates for tandem solar cells, the influence of the Metal-Organic Vapor Phase Epitaxy (MOVPE) environment on the minority carrier properties of silicon wafers has been evaluated. These properties will essentially determine the photovoltaic performance of the bottom cell in a III-V-on-Si tandem solar cell. A comparison of the base minority carrier lifetimes obtained for different thermal processes carried out in a MOVPE reactor on Czochralski silicon wafers has been carried out. An important degradation of minority carrier lifetime during the surface preparation (i.e. H2 anneal) has been observed. Three different mechanisms have been proposed for explaining this behavior: 1) the introduction of extrinsic impurities coming from the reactor; 2) the activation of intrinsic lifetime killing impurities coming from the wafer itself; and finally, 3) the formation of crystal defects, which eventually become recombination centers. The effect of the emitter formation by phosphorus diffusion has also been evaluated. In this sense, it has been reported that lifetime can be recovered during the emitter formation either by the effect of the P on extracting impurities, or by the role of the atomic hydrogen on passivating the defects.

Influência do tempo de imersão em solução aquosa contendo H2S sobre a tenacidade de tubo API 5L X65 sour avaliada a partir de ensaio Charpy

Com o decorrer dos anos o consumo de petróleo e seus derivados aumentou significativamente e com isso houve a necessidade de se investir em pesquisas para descobertas de novas jazidas de petróleo como o pré-sal. Porém, não apenas a localização dessas jazidas deve ser estudada, mas, também, sua forma de exploração. Essa exploração e extração, na maioria das vezes, se dão em ambientes altamente corrosivos e o transporte do produto extraído é realizado através de tubulações de aço de alta resistência e baixa liga (ARBL). Aços ARBL expostos a ambientes contendo H2S e CO2 (sour gas) sofrem corrosão generalizada que promovem a entrada de hidrogênio atômico no metal, podendo diminuir sua tenacidade e causar falha induzida pela presença de hidrogênio (Hydrogen Induced Cracking HIC), gerando falhas graves no material. Tais falhas podem ser desastrosas para o meio ambiente e para a sociedade. O objetivo deste trabalho é estudar a tenacidade, utilizando ensaio Charpy, de um tubo API 5L X65 sour após diferentes tempos de imersão em uma solução saturada com H2S. O eletrólito empregado foi a solução A (ácido acético contendo cloreto de sódio) da norma NACE TM0284 (2011), fazendo-se desaeração com injeção de N2, seguida de injeções de H2S. Os materiais foram submetidos a: ensaios de resistência a HIC segundo a norma NACE TM0284 (2011) e exames em microscópio óptico e eletrônico de varredura para caracterização microestrutural, de inclusões e trincas. As amostras foram submetidas a imersão em solução A durante 96h e 360h, sendo que, após doze dias do término da imersão, foram realizados os ensaios Charpy e exames fractográficos. Foram aplicados dois métodos: o de energia absorvida e o da expansão lateral, conforme recomendações da norma ASTM E23 (2012). As curvas obtidas, em função da temperatura de impacto, foram ajustadas pelo método da tangente hiperbólica. Esses procedimentos foram realizados nas duas seções do tubo (transversal e longitudinal) e permitiram a obtenção dos seguintes parâmetros: energias absorvidas e expansão lateral nos patamares superior e inferior e temperaturas de transição dúctil-frágil (TTDF) em suas diferentes definições, ou seja, TTDFEA, TTDFEA-DN, TTDFEA-FN, TTDFEL, TTDFEL-DN e TTDFEL-FN (identificação no item Lista de Abreviaturas e Siglas). No exame fractográfico observou-se que o material comportou-se conforme o previsto, ou seja, em temperaturas mais altas ocorreu fratura dúctil, em temperaturas próximas a TTDF obteve-se fratura mista e nas temperaturas mais baixas observou-se o aparecimento de fratura frágil. Os resultados mostraram que quanto maior o tempo de imersão na solução A, menor é a energia absorvida e a expansão lateral no patamar superior, o que pode ser explicado pelo (esperado) aumento do teor de hidrogênio em solução sólida com o tempo de imersão. Por sua vez, os resultados mostraram que há tendência à diminuição da temperatura de transição dúctil-frágil com o aumento do tempo de imersão, particularmente, as TTDFEA-DN e TTDFEL-DN das duas seções do tubo (longitudinal e transversal). Esse comportamento controverso, que pode ser denominado de tenacificação com o decorrer do tempo de imersão na solução A, foi explicado pelo aparecimento de trincas secundárias durante o impacto (Charpy). Isso indica uma limitação do ensaio Charpy para a avaliação precisa de materiais hidrogenados.

Electronic structure methods applied to gas-carbon reactions

A review is given on the fundamental studies of gas-carbon reactions using electronic structure methods in the last several decades. The three types of electronic structure methods including semi-empirical, ab initio and density functional theory, methods are briefly introduced first, followed by the studies on carbon reactions with hydrogen and oxygen-containing gases (non-catalysed and catalysed). The problems yet to solve and possible promising directions are discussed. (C) 2002 Elsevier Science Ltd. All rights reserved.

Simulating quantum interference in a three-level system with perpendicular transition dipole moments

We consider a three-level V-type atomic system with the ground state coupled by a laser field to only one of the excited states, and with the two excited states coupled together by a dc field. Although the dipole moments of the two dipole-allowed transitions are assumed perpendicular, we demonstrate that this system emulates to a large degree a three-level system with parallel dipole moments-the latter being a system that exhibits quantum interference and displays a number of interesting features. As examples, we show that the system can produce extremely large values for the intensity-intensity correlation function, and that its resonance fluorescence spectrum can display ultranarrow lines. The dressed states for this system are identified, and the spectral features are interpreted in terms of transitions among these dressed states. We also show that this system is capable of exhibiting considerable squeezing.

Dark matter in dwarf irregular galaxies, DDO 210 and DDO 169

It has been proposed that dwarf irregular galaxies can be separated into two classes based on their formation mechanism; that they are the result of the collapse of a primordial gas cloud or that they are the product of condensation of gas in the tidal tails of interacting galaxies. Simulations of galaxy interactions indicate that one can differentiate between these two scenarios by the dark matter content, with a low dark matter content indicating a fossil tidal dwarf. The purpose of this dissertation was to explore the dark matter distribution of two dwarf irregular galaxies using optical and neutral atomic hydrogen data. For DDO 210, the method of mass-modelling was used to determine its dark matter. About 64% of the galaxy mass was calculated to be in the form of dark matter and hence it is unlikely to be a fossil tidal dwarf. The method of mass-modelling could not be used for DDO 169 as the galaxy shows evidence of being tidally disrupted and hence, has a disturbed velocity field. Instead, the suggestion that dark matter might be responsible for a pressure anomaly in DDO 169 was tested to determine its dark matter content. According to this method, a pressure anomaly does exist but without a concrete value for the scale-height, it is unclear whether the anomaly is due to the presence of dark matter. Hence one cannot say how much dark matter might actually be present in DDO 169. A rotation curve would be required to do this. ^

The H I chronicles of LITTLE THINGS blue compact dwarf galaxies

Star formation occurs when the gas (mostly atomic hydrogen; H I) in a galaxy becomes disturbed, forming regions of high density gas, which then collapses to form stars. In dwarf galaxies it is still uncertain which processes contribute to star formation and how much they contribute to star formation. Blue compact dwarf (BCD) galaxies are low mass, low shear, gas rich galaxies that have high star formation rates when compared to other dwarf galaxies. What triggers the dense burst of star formation in BCDs but not other dwarfs is not well understood. It is often suggested that BCDs may have their starburst triggered by gravitational interactions with other galaxies, dwarf-dwarf galaxy mergers, or consumption of intergalactic gas. However, there are BCDs that appear isolated with respect to other galaxies, making an external disturbance unlikely.^ Here, I study six apparently isolated BCDs from the LITTLE THINGS sample in an attempt to understand what has triggered their burst of star formation. LITTLE THINGS is an H I survey of 41 dwarf galaxies. Each galaxy has high angular and velocity resolution H I data from the Very Large Array (VLA) telescope and ancillary stellar data. I use these data to study the detailed morphology and kinematics of each galaxy, looking for signatures of starburst triggers. In addition to the VLA data, I have collected Green Bank Telescope data for the six BCDs. These high sensitivity, low resolution data are used to search the surrounding area of each galaxy for extended emission and possible nearby companion galaxies.^ The VLA data show evidence that each BCD has likely experienced some form of external disturbance despite their apparent isolation. These external disturbances potentially seen in the sample include: ongoing/advanced dwarf-dwarf mergers, an interaction with an unknown external object, and external gas consumption. The GBT data result in no nearby, separate H I companions at the sensitivity of the data. These data therefore suggest that even though these BCDs appear isolated, they have not been evolving in isolation. It is possible that these external disturbances may have triggered the starbursts that defines them as BCDs.^

Optical emission spectroscopy as a process-monitoring tool in PECVD of amorphous carbon coatings

Dans ce projet de recherche, le dépôt des couches minces de carbone amorphe (généralement connu sous le nom de DLC pour Diamond-Like Carbon en anglais) par un procédé de dépôt chimique en phase vapeur assisté par plasma (ou PECVD pour Plasma Enhanced Chemical Vapor deposition en anglais) a été étudié en utilisant la Spectroscopie d’Émission Optique (OES) et l’analyse partielle par régression des moindres carrés (PLSR). L’objectif de ce mémoire est d’établir un modèle statistique pour prévoir les propriétés des revêtements DLC selon les paramètres du procédé de déposition ou selon les données acquises par OES. Deux séries d’analyse PLSR ont été réalisées. La première examine la corrélation entre les paramètres du procédé et les caractéristiques du plasma pour obtenir une meilleure compréhension du processus de dépôt. La deuxième série montre le potentiel de la technique d’OES comme outil de surveillance du procédé et de prédiction des propriétés de la couche déposée. Les résultats montrent que la prédiction des propriétés des revêtements DLC qui était possible jusqu’à maintenant en se basant sur les paramètres du procédé (la pression, la puissance, et le mode du plasma), serait envisageable désormais grâce aux informations obtenues par OES du plasma (particulièrement les indices qui sont reliées aux concentrations des espèces dans le plasma). En effet, les données obtenues par OES peuvent être utilisées pour surveiller directement le processus de dépôt plutôt que faire une étude complète de l’effet des paramètres du processus, ceux-ci étant strictement reliés au réacteur plasma et étant variables d’un laboratoire à l’autre. La perspective de l’application d’un modèle PLSR intégrant les données de l’OES est aussi démontrée dans cette recherche afin d’élaborer et surveiller un dépôt avec une structure graduelle.

First-principles study of the adsorption of atomic and molecular hydrogen on BC(2)N nanotubes

The adsorption of atomic and molecular hydrogen on armchair and zigzag boron carbonitride nanotubes is investigated within the ab initio density functional theory. The adsorption of atomic H on the BC(2)N nanotubes presents properties which are promising for nanoelectronic applications. Depending on the adsorption site for the H, the Fermi energy moves toward the bottom of the conduction band or toward the top of the valence band, leading the system to exhibit donor or acceptor characteristics, respectively. The H(2) molecules are physisorbed on the BC(2)N surface for both chiralities. The binding energies for the H(2) molecules are slightly dependent on the adsorption site, and they are near to the range to work as a hydrogen storage medium.

Distributed Atomic Polarizabilities of Amino Acids and their Hydrogen-Bonded Aggregates

With the purpose of rational design of optical materials, distributed atomic polarizabilities of amino acid molecules and their hydrogen-bonded aggregates are calculated in order to identify the most efficient functional groups, able to buildup larger electric susceptibilities in crystals. Moreover, we carefully analyze how the atomic polarizabilities depend on the one-electron basis set or the many-electron Hamiltonian, including both wave function and density functional theory methods. This is useful for selecting the level of theory that best combines high accuracy and low computational costs, very important in particular when using the cluster method to estimate susceptibilities of molecular-based materials.

Direct measurement of hydrogen bonding in DNA nucleotide bases by atomic force microscopy.

We have used self-assembled purines and pyrimidines on planar gold surfaces and on gold-coated atomic force microscope (AFM) tips to directly probe intermolecular hydrogen bonds. Electron spectroscopy for chemical analysis (ESCA) and thermal programmed desorption (TPD) measurements of the molecular layers suggested monolayer coverage and a desorption energy of about 25 kcal/mol. Experiments were performed under water, with all four DNA bases immobilized on AFM tips and flat surfaces. Directional hydrogen-bonding interaction between the tip molecules and the surface molecules could be measured only when opposite base-pair coatings were used. The directional interactions were inhibited by excess nucleotide base in solution. Nondirectional van der Waals forces were present in all other cases. Forces as low as two interacting base pairs have been measured. With coated AFM tips, surface chemistry-sensitive recognition atomic force microscopy can be performed.

Hydrogen bond interactions between acetone and supercritical water

Hydrogen bond interactions between acetone and supercritical water are investigated using a combined and sequential Monte Carlo/quantum mechanics (S-MC/QM) approach. Simulation results show a dominant presence of con. gurations with one hydrogen bond for different supercritical states, indicating that this specific interaction plays an important role on the solvation properties of acetone in supercritical water. Using QM MP2/aug-cc-pVDZ the calculated average interaction energy reveals that the hydrogen-bonded acetone-water complex is energetically more stable under supercritical conditions than ambient conditions and its stability is little affected by variations of temperature and/or pressure. All average results reported here are statistically converged.