Analytical model for the 3D-RESURF effect

This paper presents an analytical model for the determination of the basic breakdown properties of three-dimensional (3D)-RESURF/CoolMOS/super junction type structures. To account for the two-dimensional (2D) effect of the 3D-RESURF action, 2D models of the electric field distribution are developed. Based on these, expressions are derived for the breakdown voltage as a function of doping concentration and physical dimensions. In addition to cases where the drift regions are fully depleted, the model developed is also applicable to situations involving drift regions which are almost depleted. Accuracy of the analytical approach is verified by comparison with numerical results obtained from the MEDICI device simulator.

Extraction of fibre network architecture by X-ray tomography and prediction of elastic properties using an affine analytical model

This paper proposes a method for extracting reliable architectural characteristics from complex porous structures using micro-computed tomography (μCT) images. The work focuses on a highly porous material composed of a network of fibres bonded together. The segmentation process, allowing separation of the fibres from the remainder of the image, is the most critical step in constructing an accurate representation of the network architecture. Segmentation methods, based on local and global thresholding, were investigated and evaluated by a quantitative comparison of the architectural parameters they yielded, such as the fibre orientation and segment length (sections between joints) distributions and the number of inter-fibre crossings. To improve segmentation accuracy, a deconvolution algorithm was proposed to restore the original images. The efficacy of the proposed method was verified by comparing μCT network architectural characteristics with those obtained using high resolution CT scans (nanoCT). The results indicate that this approach resolves the architecture of these complex networks and produces results approaching the quality of nanoCT scans. The extracted architectural parameters were used in conjunction with an affine analytical model to predict the axial and transverse stiffnesses of the fibre network. Transverse stiffness predictions were compared with experimentally measured values obtained by vibration testing. © 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Flow of wet powder in a conical centrifugal filter-an analytical model

A one-dimensional analytical model is developed for the steady state, axisymmetric, slender flow of saturated powder in a rotating perforated cone. Both the powder and the fluid spin with the cone with negligible slip in the hoop direction. They migrate up the wall of the cone along a generator under centrifugal force, which also forces the fluid out of the cone through the powder layer and the porous wall. The flow thus evolves from an over-saturated paste at inlet into a nearly dry powder at outlet. The powder is treated as a Mohr-Coulomb granular solid of constant void fraction and permeability. The shear traction at the wall is assumed to be velocity and pressure dependent. The fluid is treated as Newtonian viscous. The model provides the position of the colour line (the transition from over- to under-saturation) and the flow velocity and thickness profiles over the cone. Surface tension effects are assumed negligible compared to the centrifugal acceleration. Two alternative conditions are considered for the flow structure at inlet: fully settled powder at inlet, and progressive settling of an initially homogeneous slurry. The position of the colour line is found to be similar for these two cases over a wide range of operating conditions. Dominant dimensionless groups are identified which control the position of the colour line in a continuous conical centrifuge. Experimental observations of centrifuges used in the sugar industry provide preliminary validation of the model. © 2011 Elsevier Ltd.

Steady-state analytical model for the trench insulated gate bipolar transistor

A steady-state, physically-based analytical model for the Trench Insulated Gate Bipolar Transistor which accounts for a combined PIN diode - PNP transistor carrier dynamics is proposed. Previous models (i.e. PIN model and PNP transistor model) cannot account properly for the carrier dynamics in Trench IGBT since neither the PNP transistor nor the PIN diode effect can be neglected. An optimized Trench IGBT with a large ratio between the accumulation layer and the cell size leads to substantially improved on-state characteristics, which makes the Trench IGBT potentially the most attractive device in the area of high voltage fast switching devices.

Breakdown voltage for superjunction power devices with charge imbalance: An analytical model valid for both punch through and non punch through devices

An analytical model for the electric field and the breakdown voltage (BV) of an unbalanced superjunction (SJ) device is presented in this paper. The analytical technique uses a superposition approach treating the asymmetric charge in the pillars as an excess charge component superimposed on a balanced charge component. The proposed double-exponentialmodel is able to accurately predict the electric field and the BV for unbalanced SJ devices in both punch through and non punch through conditions. The model is also reasonably accurate at extremely high levels of charge imbalance when the devices behave similarly to a PiN diode or to a high-conductance layer. The analytical model is compared against numerical simulations of charge unbalanced SJ devices and against experimental results. © 2009 IEEE.

An analytical model for guided wave inspection optimization for prismatic structures of any cross section.

This paper presents an analytical modeling technique for the simulation of long-range ultrasonic guided waves in structures. The model may be used to predict the displacement field in a prismatic structure arising from any excitation arrangement and may therefore be used as a tool to design new inspection systems. It is computationally efficient and relatively simple to implement, yet gives accuracy similar to finite element analysis and semi-analytical finite element analysis methods. The model has many potential applications; one example is the optimization of part-circumferential arrays where access to the full circumference of the pipe is restricted. The model has been successfully validated by comparison with finite element solutions. Experimental validation has also been carried out using an array of piezoelectric transducer elements to measure the displacement field arising from a single transducer element in an 88.9-mm-diameter pipe. Good agreement has been obtained between the two models and the experimental data.

Analytical model and experimental validation of friction laws for composites under low loads

In order to account for interfacial friction of composite materials, an analytical model based on contact geometry and local friction is proposed. A contact area includes several types of microcontacts depending on reinforcement materials and their shape. A proportion between these areas is defined by in-plane contact geometry. The model applied to a fibre-reinforced composite results in the dependence of friction on surface fibre fraction and local friction coefficients. To validate this analytical model, an experimental study on carbon fibrereinforced epoxy composites under low normal pressure was performed. The effects of fibre volume fraction and fibre orientation were studied, discussed and compared with analytical model results. © Springer Science+Business Media, LLC 2012.

Analytical model of spin filtering effect and its experimental verification in a forward-biased iron-metal-Al2O3-n-type GaAs tunneling structure under optical spin orientation

An analytical model for the spin filtering transport in a ferromagnetic-metal - Al2O3 - n-type semiconductor tunneling structure has been developed, and demonstrated that the ratio of the helicity-modulated photo-response to the chopped one is proportional to the sum of the relative asymmetry in conductance of two opposite spin-polarized tunneling channels and the MCD effect of the ferromagnetic metal film. The performed measurement in an iron-metal/Al2O3/n-type GaAs tunneling structure under the optical spin orientation has verified that all the aspects of the experimental results are very well in accordance with our model in the regime of the spin filtering. After the MCD effect of the iron film is calibrated by an independent measurement, the physical quantity of Delta G(t)/G(t) (Delta G(t) = G(t)(up arrow) - G(t)(down arrow) is the difference of the conductance between two opposite spin tunneling channels, G(t) =( G(t)(up arrow) + G(t)(down arrow))/2 the averaged tunneling conductance), which concerns us most, can be determined quantitatively with a high sensitivity in the framework of our analytical model. Copyright (c) EPLA, 2008.

Engineering source/drain extension regions in nanoscale double gate (DG) SOI MOSFETs: Analytical model and design considerations

In this paper, we propose for the first time, an analytical model for short channel effects in nanoscale source/drain extension region engineered double gate (DG) SOI MOSFETs. The impact of (i) lateral source/drain doping gradient (d), (ii) spacer width (s), (iii) spacer to doping gradient ratio (s/d) and (iv) silicon film thickness (T-si), on short channel effects - threshold voltage (V-th) and subthreshold slope (S), on-current (I-on), off-current (I-on) and I-on/I-off is extensively analysed by using the analytical model and 2D device simulations. The results of the analytical model confirm well with simulated data over the entire range of spacer widths, doping gradients and effective channel lengths. Results show that lateral source/drain doping gradient along with spacer width can not only effectively control short channel effects, thus presenting low off-current, but can also be optimised to achieve high values of on-currents. The present work provides valuable design insights in the performance of nanoscale DG Sol devices with optimal source/drain engineering and serves as a tool to optimise important device and technological parameters for 65 nm technology node and below. (c) 2006 Elsevier Ltd. All rights reserved.