Mechanism of mass transfer in the formation of hydrothermal deposits of sulphides [Translation from: Trudy Inst.Geol.rudn.Mesterozh. 16, 80 [pages 44-46 ”Solubility of sulphides of iron” only], 1958]

This partial translation of the original paper provides the summary of this study of the mechanism of mass transfer in the formation of hydrothermal deposits of sulphides. For determining the solubility of sulphides of iron, the radioactive isotope Fe59 was used. The solubility of two sulphides was determined.

On the character of the phytoplankton of the Yakimvarskii Gulf (Lake Ladoga) [Translation from: Botanicheskii Zhurnal, T. 44, No. 9, 1311-1314, 1959]

The Laboratory of Lake Studies of the Academy of Sciences of the USSR in 1956 undertook this complicated study of Lake Ladoga. The plan of the laboratory made allowance for the detailed investigation of the phytoplankton of the lake during a series of years. In the present article are given the preliminary results of observations on the phytoplankton of the Yakimvarskii Bay from 1956 to 1957. Details are also given on the concentration of dissolved gases and biogenic substances of the bay.

Back page of No. 44, 1986

Membership of CDF Council

拱形激光二极管侧抽运Nd∶YAG固体激光器的实验研究

详细阐述了同心抽运、同心冷却的激光二极管紧包侧抽运Nd：YAG激光器的实验研究工作。这种抽运结构使晶体内的增益场与谐振腔基模实现了良好的匹配，易于得到良好的光束质量和大能量输出，基模提取效率高。模拟分析了晶体内的增益场以及横截面内的温度分布，从不同角度探讨了激光二极管的温度特性对器件工作的影响。研究了晶体的热致退偏效应对器件调Q工作的影响．并且初步探讨了不同腔长、不同腔型下器件的工作情况，这些实验结果对进一步优化使用这种抽运结构有指导意义。所设计的激光器在工作频率6Hz时．得到了斜效率为44．3％的多模调

Fabrication of test structures for 4×4 InP/InGaAsP integrated optical matrix

A novel optical switching matrix measuring 1×2 mm2 in size is fabricated. The switching matrix is composed of waveguides, four 1×4 multimode interference (MMI) splitters, 32 total internal refraction mirrors and four 4×1 MMI combiners with the extremely compact size of 1×2 mm2. This integrated device are assessed and loss contribution measured from test structure is presented.

Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

Active-passive 44 SOA-based switch with integrated power monitoring

The first monolithically integrated 44 switch with power monitoring function using on-chip PIN photodiodes is reported. Using 10Gb/s signals, under active power control an IPDR of 12dB for a 1dB power penalty is achieved. © 2012 OSA.

Carbon nanotubes: carbon nanotube based high resolution holograms (adv. Mater. 44/2012).

By using carbon nanotubes as the smallest possible scattering element, light can be diffracted in a highly controlled manner to produce a 2D image, as reported by Haider Butt and co-workers on page OP331. An array of carbon nanotubes is elegantly patterned to produce a high resolution hologram. In response to incident light on the hologram, a high contrast and wide field of view "CAMBRIDGE" image is produced.

Demonstration of cascaded operation of active-passive integrated 4×4 SOA switches with on-chip monitoring for power control and energy consumption optimization

Cascaded 4×4 SOA switches with on-chip power monitoring exhibit potential for lowpower 16×16 integrated switches. Cascaded operation at 10Gbit/s with an IPDR of 8.5dB and 79% lower power consumption than equivalent all-active switches is reported © 2013 OSA.

High-quality GaNAs/GaAs quantum wells with light emission up to 1.44 mu m grown by molecular-beam epitaxy

High-quality GaNAs/GaAs quantum wells with high substitutional N concentrations, grown by molecular-beam epitaxy, are demonstrated using a reduced growth rate in a range of 0.125-1 mu m/h. No phase separation is observed and the GaNAs well thickness is limited by the critical thickness. Strong room-temperature photoluminescence with a record long wavelength of 1.44 mu m is obtained from an 18-nm-thick GaN0.06As0.94/GaAs quantum well. (C) 2005 American Institute of Physics.