Implantação iônica por imersão em plasma e deposição de filmes finos poliméricos provenientes da mistura hexametildisilazano/argônio

Thin polymeric films deposited by plasma are very atractive for many industrial and scientific applications, in areas such as electronics, mechanics, coatings, biomaterials, among others, due to its favorable properties such as good adhesion to the substrate, high crosslinking, nanomectric thickness, homogeneity, etc. In this work, thin films were deposited by plasma immersion ion implantation and deposition technique from a hexamethyldisilazane/argon mixture at different proportions. These films were subjected to several characterizations, such as, contact angle, which presented values near to 100 degrees, surface energy, with values near to 31 mJ/m2, hardness with values between 0.7 and 2.6 GPa, thickness from 100 to 200 nm, refractive index from 1.56 to 1.64, molecular structure presenting the following functional groups in the infrared spectra region: CHx from 2960 to 2900 cm-1; Si-H around 2130 cm-1; CH3 in Si-(CH3)x around 1410 cm-1; CH3 in Si-(CH3)x in 1260 cm-1; N-H around 1180 cm-1; CH2 in Si-CH2-Si bonds around 1025 cm-1; Si-O in Si-O-Si from 1020 to 1100 cm-1; Si-N in Si-H-Si bonds around 940 cm-1; CH3 in Si-(CH3)3 in 850 cm-1; Si-C bonds in Si-(CH3)2 around 800 cm-1; and Si-H in 680 cm-1 . From these characterizations, it was possible to conclude that the concentration of argon or hexamethyldisilazane in the mixture changed the resulting polymer

Volatile organic compounds at the air-sea interface : gas exchange rates, oceanic emissions and the effect of ocean acidification

Oceans are key sources and sinks in the global budgets of significant atmospheric trace gases, termed Volatile Organic Compounds (VOCs). Despite their low concentrations, these species have an important role in the atmosphere, influencing ozone photochemistry and aerosol physics. Surprisingly, little work has been done on assessing their emissions or transport mechanisms and rates between ocean and atmosphere, all of which are important when modelling the atmosphere accurately.rnA new Needle Trap Device (NTD) - GC-MS method was developed for the effective sampling and analysis of VOCs in seawater. Good repeatability (RSDs <16 %), linearity (R2 = 0.96 - 0.99) and limits of detection in the range of pM were obtained for DMS, isoprene, benzene, toluene, p-xylene, (+)-α-pinene and (-)-α-pinene. Laboratory evaluation and subsequent field application indicated that the proposed method can be used successfully in place of the more usually applied extraction techniques (P&T, SPME) to extend the suite of species typically measured in the ocean and improve detection limits. rnDuring a mesocosm CO2 enrichment study, DMS, isoprene and α-pinene were identified and quantified in seawater samples, using the above mentioned method. Based on correlations with available biological datasets, the effects of ocean acidification as well as possible ocean biological sources were investigated for all examined compounds. Future ocean's acidity was shown to decrease oceanic DMS production, possibly impact isoprene emissions but not affect the production of α-pinene. rnIn a separate activity, ocean - atmosphere interactions were simulated in a large scale wind-wave canal facility, in order to investigate the gas exchange process and its controlling mechanisms. Air-water exchange rates of 14 chemical species (of which 11 VOCs) spanning a wide range of solubility (dimensionless solubility, α = 0:4 to 5470) and diffusivity (Schmidt number in water, Scw = 594 to 1194) were obtained under various turbulent (wind speed at ten meters height, u10 = 0:8 to 15ms-1) and surfactant modulated (two different sized Triton X-100 layers) surface conditions. Reliable and reproducible total gas transfer velocities were obtained and the derived values and trends were comparable to previous investigations. Through this study, a much better and more comprehensive understanding of the gas exchange process was accomplished. The role of friction velocity, uw* and mean square slope, σs2 in defining phenomena such as waves and wave breaking, near surface turbulence, bubbles and surface films was recognized as very significant. uw* was determined as the ideal turbulent parameter while σs2 described best the related surface conditions. A combination of both uw* and σs2 variables, was found to reproduce faithfully the air-water gas exchange process. rnA Total Transfer Velocity (TTV) model provided by a compilation of 14 tracers and a combination of both uw* and σs2 parameters, is proposed for the first time. Through the proposed TTV parameterization, a new physical perspective is presented which provides an accurate TTV for any tracer within the examined solubility range. rnThe development of such a comprehensive air-sea gas exchange parameterization represents a highly useful tool for regional and global models, providing accurate total transfer velocity estimations for any tracer and any sea-surface status, simplifying the calculation process and eliminating inevitable calculation uncertainty connected with the selection or combination of different parameterizations.rnrn

Zooplankton and chlorophyll in upper water layers within research polygons in the Atlantic Ocean, June-September 2001

During Cruise 46 of R/V Akademik Mstislav Keldysh (from June to September 2001), vertical distributions of Radiolaria (Acantharia - Bac and Euradiolaria - Beur), mesozooplankton (from 0.2 to 3.0 mm size, Bm), and chlorophyll a (Cchl) in the epipelagic zone of the North Atlantic were studied. To examine the above-listed characteristics, samples were taken by Niskin 30 l bottles from 12-16 depth levels within the upper 100 to 200 m layer in the subarctic (48°11'N, 16°06'W) and subtropical (27°31'N, 75°51'W) waters, as well as in the transitional zone (41°44'N, 49°57'W). The latter proved to be characterized by the highest values of all averaged parameters examined by us within the upper 100 m layer (Bm - 365mg/m**3, Bac - 140 mg/m**3, Beur - 0.37 mg/m**3, and Cchl - 0.32 mg/m**3). For subarctic and subtropical waters corresponding characteristics were as follows: Bm - 123 and 53 mg/m**3, Bac - 0 and 0.06 mg/m**3, Beur - 0.17 and 0.19 mg/m**3, and Cchl - 0.27 and 0.05 mg/m**3, respectively. Percentage of Acantharia in total biomass of Radiolaria and zooplankton ranged from 0 to 39%, whereas that of Euradiolaria varied from 0.01 to 0.36%. Depth levels with maximum abundance of Acantharia were located above maxima of zooplankton and chlorophyll a or coincided with them. As for Euradiolaria, vertical profiles of their biomass were more diverse as compared with Acantharia. The latter group preferred more illuminated depth levels for its maximum development (10-100% of surface irradiance, E0) with respect to Euradiolaria (1-60% of E0). Possible reasons for this difference are discussed.

Practical, Computation Efficient High-Order Neural Network for Rotation and Shift Invariant Pattern Recognition

In this paper, a modification for the high-order neural network (HONN) is presented. Third order networks are considered for achieving translation, rotation and scale invariant pattern recognition. They require however much storage and computation power for the task. The proposed modified HONN takes into account a priori knowledge of the binary patterns that have to be learned, achieving significant gain in computation time and memory requirements. This modification enables the efficient computation of HONNs for image fields of greater that 100 × 100 pixels without any loss of pattern information.

Thiophene adsorption studies on clean and hydrogen-preadsorbed MoS2(100) surface

It is known from temperature-programmed desorption studies that the binding energy of thiophene over Mo/gamma-Al2O3 and Co-Mo/gamma-Al2O3, hydrodesulfurization catalysts, is lower in the presence of hydrogen. The adsorption of thiophene on clean and hydrogen-adsorbed MoS2 was modelled using extended Huckel tight binding band structure calculations. In the eta(1) adsorption configuration the calculations show a lower binding energy for adsorption on the hydrogen-preadsorbed surface similar to that observed experimentally. The lowering is due to an increased occupancy of the Mo density of states in the presence of hydrogen.

Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots

The influence of GaAS(1 0 0)2 degrees substrate misorientation on the formation and optical properties of InAs quantum dots (QDs) has been studied in compare with dots on exact GaAs(1 0 0) substrates. It is shown that, while QDs on exact substrates have only one dominant size, dots on misoriented substrates are formed in lines with a clear bimodal size distribution. Room temperature photoluminescence measurements show that QDs on misoriented substrates have narrower FWHM, longer emission wavelength and much larger PL intensity relative to those of dots on exact substrates. However, our rapid thermal annealing (RTA) experiments indicate that annealing shows a stronger effect on dots with misoriented substrates by greatly accelerating the degradation of material quality. (c) 2005 Elsevier B.V All rights reserved.

Investigation of a chemically treated InP(100) surface during hydrophilic wafer bonding process

Surface micro-roughness, surface chemical properties, and surface wettability are three important aspects of wafer surfaces during a wafer cleaning process, which determine the bonding quality of ordinary direct wafer bonding. In this study, InP wafers are divided into four groups and treated by different chemical processes. Subsequently, the characteristics of the treated InP surfaces are carefully studied by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and contact angle measurements. The optimal wafer treatment method for wafer bonding is determined by comparing the results of the processes as a whole. This optimization is later evaluated by a scanning electronic microscope (SEM), and the ridge waveguide 1.55 mu m Si-based InP/InGaAsP multi-quantum-well laser chips are also fabricated. (c) 2005 Elsevier B.V. All rights reserved.

INVESTIGATION OF THE GROWN DIAMOND (100) SURFACE USING HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY

The diamond (100) facets deposited at initial 1.0% CH4 have been investigated using high resolution electron energy loss spectroscopy (HREELS). The diamond (100) facets grown at 800-degrees-C are terminated by CH2 radicals, and there is no detectable frequency shift compared with the characteristic frequencies of molecular subgroup CH2. Beside the CH2 vibration loss, CH bend loss (at 140 meV) of locally monohydrogenated dimer is detected for the diamond (100) facets grown at 1000-degrees-C. Dosing the (100) facets grown at 800-degrees-C with atomic hydrogen at 1*10(-6) mbar, the loss peak at 140 meV appears. It is suggested that there are enough separately vacant sites and uniformly dispersed monohydrogenated dimers on (100) facets. This structure relaxes the steric repulsion between the adjacent hydrogen atoms during the diamond (100) surface growth.

ELECTRONIC SPECTROSCOPY STUDIES OF A P2S5NH4OH TREATED GAS(100) SURFACE

Microscopic characteristics of the GaAs(100) surface treated with P2S5/NH4OH solution has been investigated by using Auger-electron spectroscopy (AES) and x-ray photoemission spectroscopy (XPS). AES reveals that only phosphorus and sulfur, but not oxygen, are contained in the interface between passivation film and GaAs substrate. Using XPS it is found that both Ga2O3 and As2O3 are removed from the GaAs surface by the P2S5/NH4OH treatment; instead, gallium sulfide and arsenic sulfide are formed. The passivation film results in a reduction of the density of states of the surface electrons and an improvement of the electronic and optical properties of the GaAs surface.

New aspects of K promoted nitridation of the InP(100) surface

The effect of molecular nitrogen exposure on the InP(100) surface modified by the alkali metal K overlayer is investigated by core-level photoemission spectroscopy using synchrotron radiation. The alkali metal covered surface exhibits reasonable nitrogen uptake at room temperature, and results in the formation of a P3N5 nitride complex. Flash annealing at 400 degrees C greatly enhanced the formation of this kind of nitride complex. Above 500 degrees C, the nitride complex dissolved completely. (C) 1997 American Vacuum Society.

PASSIVATION OF THE INP(100) SURFACE USING (NH4)(2)S-X

InP(100) surface treated with (NH4)(2)S-x has been investigated by using photoluminescence(PL), Auger electron spectroscopy and X-ray photoelectron spectroscopy. It is found that PL intensity increased by a factor of 3.3 after (NH4)(2)S-x passivation and the sulfur remained on the surface only bonded to indium, not to phosphorus. This suggests that the sulfur atoms replace the phosphorus atoms on the surface and occupy the phosphorus vacancies.

PHOTOEMISSION-STUDIES OF K-PROMOTED NITRIDATION AND OXIDATION OF THE INP(100) SURFACE USING SYNCHROTRON-RADIATION

The effect of a potassium overlayer on nitridation and oxidation of the InP(100) surface is investigated by core-level and valence-band photoemission spectroscopy using synchrotron radiation. In comparison with the K-promoted nitridation of the InP(110) surface obtained by cleavage in situ, we found that the promotive effect for the InP(100) surface cleaned by ions bombardment is much stronger and that the nitridation products consist of two kinds of complexes: InPNx and InPNx+y. The results confirmed that surface defects play an important part in the promotive effect. Furthermore, in contrast with K-promoted oxidation of InP(100) where bonding is observed between indium and oxygen, indium atoms did not react directly with nitrogen atoms during the K-promoted nitridation of InP(100). (C) 1995 American Vacuum Society.

PHOTOEMISSION-STUDIES OF K-PROMOTED NITRIDATION OF INP(100) SURFACE USING SYNCHROTRON-RADIATION

The effect of molecular nitrogen exposure on the surfaces of InP(100) modified by potassium overlayers is investigated by core-level and valence-band photoemission spectroscopy using Synchrotron radiation. In comparison with InP(110) surface, we found the promotion is much stronger for InP(100) surface due to the central role of surface defects in the promotion; furthermore, in contrast with K-promoted oxidation of InP(100) where the bonding is observed between indium and oxygen, indium atoms did not react directly with nitrogen atoms during the K-promoted nitridation of InP(100).