The scattering of general SH plane wave by interface crack between two dissimilar viscoelastic bodies

The scattering of general SH plane wave by an interface crack between two dissimilar viscoelastic bodies is studied and the dynamic stress,intensity factor at the crack-tip is computed. The scattering problem can be decomposed into two problems: one is the reflection and refraction problem of general SH plane waves at perfect interface (with no crack); another is the scattering problem due to the existence of crack. For the first problem, the viscoelastic wave equation, displacement and stress continuity conditions across the interface are used to obtain the shear stress distribution at the interface. For the second problem, the integral transformation method is used to reduce the scattering problem into dual integral equations. Then, the dual integral equations are transformed into the Cauchy singular integral equation of first kind by introduction of the crack dislocation density function. Finally, the singular integral equation is solved by Kurtz's piecewise continuous function method. As a consequence, the crack opening displacement and dynamic stress intensity factor are obtained. At the end of the paper, a numerical example is given. The effects of incident angle, incident frequency and viscoelastic material parameters are analyzed. It is found that there is a frequency region for viscoelastic material within which the viscoelastic effects cannot be ignored.

Interface crack problems with strain gradient effects

In this paper, the strain gradient theory proposed by Chen and Wang (2001 a, 2002b) is used to analyze an interface crack tip field at micron scales. Numerical results show that at a distance much larger than the dislocation spacing the classical continuum plasticity is applicable; but the stress level with the strain gradient effect is significantly higher than that in classical plasticity immediately ahead of the crack tip. The singularity of stresses in the strain gradient theory is higher than that in HRR field and it slightly exceeds or equals to the square root singularity and has no relation with the material hardening exponents. Several kinds of interface crack fields are calculated and compared. The interface crack tip field between an elastic-plastic material and a rigid substrate is different from that between two elastic-plastic solids. This study provides explanations for the crack growth in materials by decohesion at the atomic scale.

Asymptotic analysis for a crack on interface of damaged materials

An asymptotic analysis for a crack lying on the interface of a damaged plastic material and a linear elastic material is presented in this paper. The present results show that the stress distributions along the crack tip are quite similar to those with HRR singularity field and the crack faces open obviously. Material constants n, mu and mo are varied to examine their effects on the resulting stress distributions and displacement distributions in the damaged plastic region. It is found that the stress components sigma(rr), sigma(theta theta), sigma(r theta) and sigma(e) are slightly affected by the changes of material constants n, mu and m(0), but the damaged plastic region are greatly disturbed by these material parameters.

An overview of air-sea interface process studies

Recent progress in the study of air-sea interface processes for momentum, heat, moisture and mass transfer are reviewed in the present article. Except for turbulent structure, we have analysed the other physical mechanisms occurring in the wave boundary layer, such as the roles of the sea surface state, droplets and bubbles due to wave breaking, which at least partly account for the existing discrepancies between theory and observations. The experiments, both over the ocean and in the laboratory, are described briefly. In conclusion, a few perspective trends in this area are suggested for further investigation.

Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy

The structure and chemistry of the interface between a Si(111) substrate and an AlN(0001) thin film grown by metalorganic vapor phase epitaxy have been investigated at a subnanometer scale using high-angle annular dark field imaging and electron energy-loss spectroscopy. 〈1120̄〉AlN ∥ 〈110〉Si and 〈0001〉AlN ∥ 〈111〉 Si epitaxial relations were observed and an Al-face polarity of the AlN thin film was determined. Despite the use of Al deposition on the Si surface prior to the growth, an amorphous interlayer of composition SiNx was identified at the interface. Mechanisms leading to its formation are discussed. © 2010 American Institute of Physics.

Thickness of the near-interface regions and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films

Thickness of the near-interface regions (NIR) and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films were investigated. A method to separate the low-resistive near-interface regions (NIRs) from the high-resistive central bulk region (CBR) in ferroelectric thin films was presented. Results showed that the thickness of the NIRs depended on the electrode materials in use and the CBR resistivity depended on the impurity doping levels.

Linear Stability Analysis of Convection in Two-Layer System with an Evaporating Vapor-Liquid Interface

Classical theories have successfully provided an explanation for convection in a liquid layer heated from below without evaporation. However, these theories are inadequate to account for the convective instabilities in an evaporating liquid layer, especially in the case when it is cooled from below. In the present paper, we study the onset of Marangoni convection in a liquid layer being overlain by a vapor layer.A new two-sided model is put forward instead of the one-sided model in previous studies. Marangoni-Bénard instabilities in evaporating liquid thin layers are investigated with a linear instability analysis. We define a new evaporation Biot number, which is different from that in previous studies and discuss the influences of reference evaporating velocity and evaporation Biot number on the vapor-liquid system. At the end, we explain why the instability occurs even when an evaporating liquid layer is cooled from below.

Singularity of Stress Field Around Interface Crack Between Viscoelastic Bodies

研究两半无限大黏弹性体间Griffith界面裂纹在简谐载荷作用下裂纹尖端动应力场的奇异特性.通过引入裂纹张开位移和裂纹位错密度函数,相应的混合边值问题归结为一组耦合的奇异积分方程.渐近分析表明裂尖动应力场的奇异特征完全包含在奇异积分方程的基本解中.通过对基本解的深入分析发现黏弹性材料界面裂纹裂尖动应力场具有与材料参数和外载荷频率相关的振荡奇异特性.以标准线性固体黏弹材料为例讨论了材料参数和载荷频率对奇性指数和振荡指数的影响.

Dasher - A data entry interface using continuous gestures and language models

Existing devices for communicating information to computers are bulky, slow to use, or unreliable. Dasher is a new interface incorporating language modelling and driven by continuous two-dimensional gestures, e.g. a mouse, touchscreen, or eye-tracker. Tests have shown that this device can be used to enter text at a rate of up to 34 words per minute, compared with typical ten-finger keyboard typing of 40-60 words per minute. Although the interface is slower than a conventional keyboard, it is small and simple, and could be used on personal data assistants and by motion-impaired computer users.

Analysis of the strengthening and toughening of a biomaterial interface

Based on the transmission electron micrographs of nacre, the existence of mineral bridges in the organic matrix interface is confirmed. It is proposed that the microarchitecture of nacre should be considered as a "brick-bridge-mortar" (BBM) arrangement rather than traditional "brick and mortar" (BM) one. Experiments and analyses indicate that the mineral bridges effectively affect the strength and toughness of the interfaces in nacre. Comparison with a laminated composite with BM structure, SiC/BN, shows that the pattern of the crack extension and the toughening mechanism of the two materials are different. This reveals that the mineral bridges play a key role in the toughening mechanisms of nacre, which gives a conceptual guidance in material synthesis.

Finite Boundary Effects in Problem of a Crack Perpendicular to and Terminating at a Bimaterial Interface

In this paper, the problem of a crack perpendicular to and terminating at an interface in bimaterial structure with finite boundaries is investigated. The dislocation simulation method and boundary collocation approach are used to derive and solve the basic equations. Two kinds of loading form are considered when the crack lies in a softer or a stiffer material, one is an ideal loading and the other one fits to the practical experiment loading. Complete solutions of the stress field including the T stress are obtained as well as the stress intensity factors. Influences of T stress on the stress field ahead of the crack tip are studied. Finite boundary effects on the stress intensity factors are emphasized. Comparisons with the problem presented by Chen et al. (Int. J. Solids and Structure, 2003, 40, 2731-2755) are discussed also.

Debonding and cracking energy release rate of the fiber/matrix interface

An investigation of fiber/matrix interfacial fracture energy is presented in this paper. Several existing theoretical expressions for the fracture energy of interfacial debonding are reviewed. For the single-fiber/matrix debonding and pull-out experimental model, a study is carried out on the effect of interfacial residual compressive stress and friction on interface cracking energy release rate.

Stress state in front of a crack perpendicular to bimaterial interface

Using a dislocation simulation approach, the basic equation for a crack perpendicular to a bimaterial interface is formulated in this paper. A novel expansion method is proposed for solving the problem. The complete solution for the problem, including the T stress ahead of the crack tip and the stress intensity factors are presented. The stress field characteristics are analyzed in detail. It is found that ahead of the crack tip and near the interface the normal stress, perpendicular to the crack plane, sigma(x), is characterized by the K fields and the normal stress sigma(y) is dominated by the K field plus T stress in the region of 0 < r/b < 0.4 for b/a(0) less than or equal to 0.1, where b is the distance from the crack tip to the interface.

Immunosensor Interface Based on Physical and Chemical Immunogylobulin G Adsorption onto Mixed Self-Assembled Monolayers

An immunosensor interface based on mixed hydrophobic self-assembled monolayers (SAMs) of methyl and carboxylic acid terminated thiols with covalently attached human Immunoglobulin G (hIgG), is investigated. The densely packed and organised SAMs were characterised by contact angle measurements and cyclic voltammetry. The effect of the non-ionic surfactant, Tween 20, in preventing nonspecific adsorption is addressed by ellipsometry during physical and covalent hIgG immobilization on pure and mixed SAMs, respectively. It is clearly demonstrated that nonspecific adsorption due to hydrophobic interactions of hIgG on methyl ended groups is totally inhibited, whereas electrostatic/hydrogen bonding interactions with the exposed carboxylic groups prevail in the presence of surfactant. Results of ellipsometry and Atomic Force Microscopy, reveal that the surface concentration of covalently immobilized hIgG is determined by the ratio of COOH/CH3-terminated thiols in SAM forming solution. Moreover, the ellipsometric data demonstrates that the ratio of bound anti-hIgG/hIgG depends on the density of hIgG on the surface and that the highest ratio is close to three. We also report the selectivity and high sensitivity achieved by chronoamperometry in the detection of adsorbed hIgG and the reaction with its antibody.