Bias-dependent recovery time of all-optical resonant nonlinearity in InGaAsP/InGaAsP MQW waveguide

We have investigated a resonant refractive nonlinearity in a semiconductor waveguide by measuring intensity dependent phase shifts and bias-dependent recovery times. The measurements were performed on an optimized 750-μm-long AR coated buried heterostructure MQW p-i-n waveguide with a bandedge at 1.48 μm. Figure 1 shows the experimental arrangement. The mode-locked color center laser was tuned to 50 meV beyond the bandedge and 8 ps pulses with peak incident power up to 57 W were coupled into the waveguide. Some residual bandtail absorption remains at this wavelength and this is sufficient to cause carriers to be photogenerated and these give rise to a refractive nonlinearity, predominantly by plasma and bandfilling effects. A Fabry-Perot interferometer is used to measure the spectrum of the light which exits the waveguide. The nonlinearity within the guide causes self phase modulation (SPM) of the light and a study of the spectrum allows information to be recovered on the magnitude and recovery time of the nonlinear phase shift with a reasonable degree of accuracy. SPM spectra were recorded for a variety of pulse energies coupled into he unbiased waveguide. Figure 2 shows the resultant phase shift measured from the SPM spectra as a function of pulse energy. The relationship is a linear one, indicating that no saturation of the nonlinearity occurs for coupled pulse energies up to 230 pJ. A π phase shift, the minimum necessary for an all-optical switch, is obtained for a coupled pulse energy of 57 pJ while the maximum phase shift, 4 π, was measured for 230 pJ. The SPM spectra were highly asymmetric with pulse energy shifted to higher frequencies. Such spectra are characteristic of a slow, negative nonlinearity. This relatively slow speed is expected for the unbiased guide as the recovery time will be of the order of the recombination time of the photogenerated electrons, about 1 ns for InGaAsP material. In order to reduce the recovery time of the nonlinearity, it is necessary to remove the photogenerated carriers from the waveguide by a process other than recombination. One such technique is to apply a reverse bias to the waveguide in order to sweep the carriers out. Figure 3 shows the effect on the recovery time of the nonlinearity of applying reverse bias to the waveguide for 230 pJ coupled power. The recovery time was reduced from one much longer than the length of the pulse, estimated to be about 1 ns, at zero bias to 18 ± 3 ps for a bias voltage greater than -4 V. This compares with a value of 24 ps obtained in a bulk waveguide.

Demonstration of multi wavelength picosecond pulse generation with resonant RF drive using an monolithically integrated multi-grating cavity (MGC) laser

Multiwavelength pulses were generated using a monolithically integrated device. The device used is an integrated InGaAs/InGaAsP/InP multi-wavelength laser fabricated by selective area regrowth. The device self pulsated on all of the four wavelength channels. 48 ps pulses were obtained which were measured by a 50GHz oscilloscope and 32GHz photodiode which was not bandwidth limited. Simultaneous multi-wavelength pulse generation was also achieved.

Resonant-cavity LED transceiver arrays for optical wireless communication

155Mb/s operation of an optical wireless link is achieved by using the spectral characteristics and angular emission spectra of a 7-element tracking array of 980nm RC-LEDs. Preliminary results show extension to 200 Mb/s/channel. © 2006 Optical Society of America.

Fabrication and testing of a high resolution extensometer based on resonant MEMS strain sensors

A novel type of linear extensometer with exceptionally high resolution of 4 nm based on MEMS resonant strain sensors bonded on steel and operating in a vacuum package is presented. The tool is implemented by means of a steel thin bar that can be pre-stressed in tension within two fixing anchors. The extension of the bar is detected by using two vacuum-packaged resonant MEMS double- ended tuning fork (DETF) sensors bonded on the bar with epoxy glue, one of which is utilized for temperature compensation. Both sensors are driven by a closed loop self-oscillating transresistance amplifier feedback scheme implemented on a PCB (Printed Circuit Board). On the same board, a microcontroller-based frequency measurement circuit is also implemented, which is able to count the square wave fronts of the MEMS oscillator output with a resolution of 20 nsec. The system provides a frequency noise of 0.2 Hz corresponding to an extension resolution of 4 nm for the extensometer. Nearly perfect temperature compensation of the frequency output is achieved in the temperature range 20-35 C using the reference sensor. © 2011 IEEE.

Air stable complementary polymer circuits fabricated in ambient condition by inkjet printing

Air stable complementary polymer inverters were demonstrated by inkjet printing of both top-gate electrodes and the semiconductors in ambient conditions. The p-type and n-type polymer semiconductors were also thermally annealed in ambient conditions after printing. The good performance of circuits in ambient condition shows that the transistors are not only air-stable in term of ambient humidity and oxygen, but also inert to ion migration through dielectrics from the printed gate. The result obtained here has further confirmed the feasibility of fabrication of low-cost polymer complementary circuits in a practical environment. © 2011 Elsevier B.V. All rights reserved.

Disconnection of the hippocampal-prefrontal cortical circuits impairs spatial working memory performance in rats

There is a unidirectional, ipsilateral and monosynaptic projection from the hippocampus to the prefrontal cortex. The cognitive function of hippocampal-prefrontal cortical circuit is not well established. In this paper, we use muscimol treated rats to inv

One step self-aligned multilayer patterning process for the fabrication of organic complementary circuits in combination with inkjet printing

Recent development of solution processable organic semiconductors delineates the emergence of a new generation of air-stable, high performance p- and n-type materials. This makes it indeed possible for printed organic complementary circuits (CMOS) to be used in real applications. The main technical bottleneck for organic CMOS to be adopted as the next generation organic integrated circuit is how to deposit and pattern both p- and n-type semiconductor materials with high resolutions at the same time. It represents a significant technical challenge, especially if it can be done for multiple layers without mask alignment. In this paper, we propose a one-step self-aligned fabrication process which allows the deposition and high resolution patterning of functional layers for both p- and n-channel thin film transistors (TFTs) simultaneously. All the dimensional information of the device components is featured on a single imprinting stamp, and the TFT-channel geometry, electrodes with different work functions, p- and n-type semiconductors and effective gate dimensions can all be accurately defined by one-step imprinting and the subsequent pattern transfer process. As an example, we have demonstrated an organic complementary inverter fabricated by 3D imprinting in combination with inkjet printing and the measured electrical characteristics have validated the feasibility of the novel technique. © 2012 Elsevier B.V. All rights reserved.

NEMS based logic and memory circuits

Carbon nanotube (CNT) based nano electromechanical system (NEMS) were developed to apply to the logic and the memory circuit. The electrical 'on-off' behavior induced by the mechanical movements of CNTs can promise low power consumption in circuit with very low level leakage current. Additionally, the unique vertical structure of nanotubes allows high integration density for devices. © 2012 IEEE.

Micro-electro-mechanical resonant tilt sensor

This paper reports a micro-electro-mechanical tilt sensor based on resonant sensing principles. The tilt sensor measures orientation by sensing the component of gravitational acceleration along a specified input axis. Design aspects of the tilt sensor are first introduced and a design trade-off between sensitivity, resolution and robustness is addressed. A prototype sensor is microfabricated in a foundry process. The sensor is characterized to validate predictive analytical and FEA models of performance. The prototype is tested over tilt angles ranging over ±90 degrees and the linearity of the sensor is found to be better than 1.4% over the tilt angle range of ±20°. The noise-limited resolution of the sensor is found to be approximately 0.00026 degrees for an integration time of 0.6 seconds. © 2012 IEEE.

Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowires.

Nonequilibrium spin distributions in single GaAs/AlGaAs core-shell nanowires are excited using resonant polarized excitation at 10 K. At all excitation energies, we observe strong photoluminescence polarization due to suppressed radiative recombination of excitons with dipoles aligned perpendicular to the nanowire. Excitation resonances are observed at 1- or 2-LO phonon energies above the exciton ground states. Using rate equation modeling, we show that, at the lowest energies, strongly nonequilibrium spin distributions are present and we estimate their spin relaxation rate.

Micro-electro-mechanical resonant tilt sensor with 250 nano-radian resolution

This paper reports a high-resolution frequency-output MEMS tilt sensor based on resonant sensing principles. The tilt sensor measures orientation by sensing the component of gravitational acceleration along a specified input axis. A combination of design enhancements enables significantly higher sensitivity for this device as compared to previously reported prototype sensors. The MEMS tilt sensor is calibrated on a manual tilt table over tilt angles ranging over 0-90 degrees with a relatively linear response measured in the range of ±20°(linearity error <2.3%) with a scale factor of approximately 50.06 Hz/degree. The noise-limited resolution of the sensor is found to be approximately 250 nano-radians for an integration time of 0.8 s, which is over an order of magnitude better than previously reported results [1]. © 2013 IEEE.