Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III?V materials on silicon for photovoltaic applications. When manufacturing a multi-junction solar cell on silicon, one of the first processes to be addressed is the development of the bottom subcell and, in particular, the formation of its emitter. In this study, we analyze, both experimentally and by simulations, the formation of the emitter as a result of phosphorus diffusion that takes place during the first stages of the epitaxial growth of the solar cell. Different conditions for the Metal-Organic Vapor Phase Epitaxy (MOVPE) process have been evaluated to understand the impact of each parameter, namely, temperature, phosphine partial pressure, time exposure and memory effects in the final diffusion profiles obtained. A model based on SSupremIV process simulator has been developed and validated against experimental profiles measured by ECV and SIMS to calculate P diffusion profiles in silicon formed in a MOVPE environment taking in consideration all these factors.

Laser ablation modelling of aluminium, silver and crystalline silicon for applications in photovoltaic technologies

Laser material processing is being extensively used in photovoltaic applications for both the fabrication of thin film modules and the enhancement of the crystalline silicon solar cells. The two temperature model for thermal diffusion was numerically solved in this paper. Laser pulses of 1064, 532 or 248 nm with duration of 35, 26 or 10 ns were considered as the thermal source leading to the material ablation. Considering high irradiance levels (108–109 W cm−2), a total absorption of the energy during the ablation process was assumed in the model. The materials analysed in the simulation were aluminium (Al) and silver (Ag), which are commonly used as metallic electrodes in photovoltaic devices. Moreover, thermal diffusion was also simulated for crystalline silicon (c-Si). A similar trend of temperature as a function of depth and time was found for both metals and c-Si regardless of the employed wavelength. For each material, the ablation depth dependence on laser pulse parameters was determined by means of an ablation criterion. Thus, after the laser pulse, the maximum depth for which the total energy stored in the material is equal to the vaporisation enthalpy was considered as the ablation depth. For all cases, the ablation depth increased with the laser pulse fluence and did not exhibit a clear correlation with the radiation wavelength. Finally, the experimental validation of the simulation results was carried out and the ability of the model with the initial hypothesis of total energy absorption to closely fit experimental results was confirmed.

Effect of concentration on the performance of quantum dot intermediate-band solar cells

Implementation of a high-efficiency quantum dot intermediate-band solar cell (QD-IBSC) must accompany a sufficient photocurrent generation via IB states. The demonstration of a QD-IBSC is presently undergoing two stages. The first is to develop a technology to fabricate high-density QD stacks or a superlattice of low defect density placed within the active region of a p-i-n SC, and the second is to realize half-filled IB states to maximize the photocurrent generation by two-step absorption of sub-bandgap photons. For this, we have investigated the effect of light concentration on the characteristics of QDSCs comprised of multi-layer stacks of self-organized InAs/GaNAs QDs grown with and without impurity doping in molecular beam epitaxy.

IBPOWER Project, Intermediate band materials and solar cells for photovoltaics with high efficiency and reduced cost

IBPOWER is a Project awarded under the 7th European Framework Programme that aims to advance research on intermediate band solar cells (IBSCs). These are solar cells conceived to absorb below bandgap energy photons by means of an electronic energy band that is located within the semiconductor bandgap, whilst producing photocurrent with output voltage still limited by the total semiconductor bandgap. IBPOWER employs two basic strategies for implementing the IBSC concept. The first is based on the use of quantum dots, the IB arising from the confined energy levels of the electrons in the dots. Quantum dots have led to devices that demonstrate the physical operation principles of the IB concept and have allowed identification of the problems to be solved to achieve actual high efficiencies. The second approach is based on the creation of bulk intermediate band materials by the insertion of an appropriate impurity into a bulk semiconductor. Under this approach it is expected that, when inserted at high densities, these impurities will find it difficult to capture electrons by producing a breathing mode and will cease behaving as non-radiative recombination centres. Towards this end the following systems are being investigated: a) Mn: In1-xGax N; b) transition metals in GaAs and c) thin films.

Study of the effect of different hole sizes on mechanical strength of wafers for back contact solar cells

Drilling process on wafers to produce EWT or MWT solar cells is a critical fabrication step, which affects on their mechanical stability. The amount of damage introduced during drilling process depends on the density of holes, their size and the chemical process applied afterwards. To quantify the relation between size of the holes and reduction of mechanical strength, several sets of wafers have been prepared, with different hole diameter. The mechanical strength of these sets has been measured by the ring on ring bending test, and the stress state in the moment of failure has been deduced by FE simulation.

Damage reduction of the laser drilling process on back contact solar cells by chemical treatment

Production of back contact solar cells requires holes generations on the wafers to keep both positive and negative contacts on the back side of the cell. This drilling process weakens the wafer mechanically due to the presence of the holes and the damage introduced during the process as microcracks. In this study, several chemical processes have been applied to drilled wafers in order to eliminate or reduce the damage generated during this fabrication step. The treatments analyzed are the followings: alkaline etching during 1, 3 and 5 minutes, acid etching for 2 and 4 minutes and texturisation. To determine mechanical strength of the samples a common mechanical study has been carried out testing the samples by the Ring on Ring bending test and obtaining the stress state in the moment of failure by FE simulation. Finally the results obtained for each treatment were fitted to a three parameter Weibull distribution

ARXPS analysis of a GaAs/GaInP heterointerface with application in III-V multijunction solar cells

In this contribution, angle-resolved X-ray photoelectron spectroscopy is used to explore the extension and nature of a GaAs/GaInP heterointerface. This bilayer structure constitutes a very common interface in a multilayered III-V solar cell. Our results show a wide indium penetration into the GaAs layer, while phosphorous diffusion is much less important. The physico-chemical nature of such interface and its depth could deleteriously impact the solar cell performance. Our results probe the formation of spurious phases which may profoundly affect the interface behavior.

Optimization of the silicon subcell for III-V on silicon multijunction solar cells: key differences with conventional silicon technology

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

Preliminary temperature Accelerated Life Test (ALT) on III-V commercial concentrator triple-junction solar cells

A quantitative temperature accelerated life test on sixty GaInP/GaInAs/Ge triple-junction commercial concentrator solar cells is being carried out. The final objective of this experiment is to evaluate the reliability, warranty period, and failure mechanism of high concentration solar cells in a moderate period of time. The acceleration of the degradation is realized by subjecting the solar cells at temperatures markedly higher than the nominal working temperature under a concentrator Three experiments at three different temperatures are necessary in order to obtain the acceleration factor which relates the time at the stress level with the time at nominal working conditions. . However, up to now only the test at the highest temperature has finished. Therefore, we can not provide complete reliability information but we have analyzed the life data and the failure mode of the solar cells inside the climatic chamber at the highest temperature. The failures have been all of them catastrophic. In fact, the solar cells have turned into short circuits. We have fitted the failure distribution to a two parameters Weibull function. The failures are wear-out type. We have observed that the busbar and the surrounding fingers are completely deteriorate

InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

In the last decade several prototypes of intermediate band solar cells (IBSCs) have been manufactured. So far, most of these prototypes have been based on InAs/GaAs quantum dots (QDs) in order to implement the IB material. The key operation principles of the IB theory are two photon sub-bandgap (SBG) photocurrent, and output voltage preservation, and both have been experimentally demonstrated at low temperature. At room temperature (RT), however, thermal escape/relaxation between the conduction band (CB) and the IB prevents voltage preservation. To improve this situation, we have produced and characterized the first reported InAs/AlGaAs QD-based IBSCs. For an Al content of 25% in the host material, we have measured an activation energy of 361 meV for the thermal carrier escape. This energy is about 250 meV higher than the energies found in the literature for InAs/GaAs QD, and almost 140 meV higher than the activation energy obtained in our previous InAs/GaAs QD-IBSC prototypes including a specifically designed QD capping layer. This high value is responsible for the suppression of the SBG quantum efficiency under monochromatic illumination at around 220 K. We suggest that, if the energy split between the CB and the IB is large enough, activation energies as high as to suppress thermal carrier escape at room temperature (RT) can be achieved. In this respect, the InAs/AlGaAs system offers new possibilities to overcome some of the problems encountered in InAs/GaAs and opens the path for QD-IBSC devices capable of achieving high efficiency at RT.

Crack origin and detection in thin cristallyne solar cells in a production line

In order to reduce cost and make up for the rising price of silicon, silicon wafers are sliced thinner and wider,eading to weaker wafers and increased breakage rates during fabrication process. In this work we have analysed different cracks origins and their effect on wafer’s mechanical strength. To enhance wafer’s strength some etching methods have been tested. Also, we have analysed wafers from different points of an entire standard production process. Mechanical strength of the wafers has been obtained via the four line bending test and detection of cracks has been tested with Resonance Ultrasonic Vibration (RUV) system, developed by the University of South Florida.

Free-form optics for Fresnel-lens-based photovoltaic concentrators

The Concentrated Photovoltaics (CPV) promise relies upon the use of high-efficiency triple-junction solar cells (with proven efficiencies of over 44%) and upon high-performance optics that allow for high concentration concurrent with relaxed manufacturing tolerances (all key elements for low-cost mass production). Additionally, uniform illumination is highly desirable for efficiency and reliability reasons. All of these features have to be achieved with inexpensive optics containing only a few (in general no more than 2) optical elements. In this paper we show that the degrees of freedom using free-forms allow the introduction of multiple functionalities required for CPV with just 2 optical elements, one of which is a Fresnel lens.

Advanced Fresnel Köhler concentrators for photovoltaic applications

La concentración fotovoltaica (CPV) es una de las formas más prometedoras de reducir el coste de la energía proveniente del sol. Esto es posible gracias a células solares de alta eficiencia y a una significativa reducción del tamaño de la misma, que está fabricada con costosos materiales semiconductores. Ambos aspectos están íntimamente ligados ya que las altas eficiencias solamente son posibles con materiales y tecnologías de célula caros, lo que forzosamente conlleva una reducción del tamaño de la célula si se quiere lograr un sistema rentable. La reducción en el tamaño de las células requiere que la luz proveniente del sol ha de ser redirigida (es decir, concentrada) hacia la posición de la célula. Esto se logra colocando un concentrador óptico encima de la célula. Estos concentradores para CPV están formados por diferentes elementos ópticos fabricados en materiales baratos, con el fin de reducir los costes de producción. El marco óptimo para el diseño de concentradores es la óptica anidólica u óptica nonimaging. La óptica nonimaging fue desarrollada por primera vez en la década de los años sesenta y ha ido evolucionando significativamente desde entonces. El objetivo de los diseños nonimaging es la transferencia eficiente de energía entre la fuente y el receptor (sol y célula respectivamente, en el caso de la CPV), sin tener en cuenta la formación de imagen. Los sistemas nonimaging suelen ser simples, están compuestos de un menor número de superficies que los sistemas formadores de imagen y son más tolerantes a errores de fabricación. Esto hace de los sistemas nonimaging una herramienta fundamental, no sólo en el diseño de concentradores fotovoltaicos, sino también en el diseño de otras aplicaciones como iluminación, proyección y comunicaciones inalámbricas ópticas. Los concentradores ópticos nonimaging son adecuados para aplicaciones CPV porque el objetivo no es la reproducción de una imagen exacta del sol (como sería el caso de las ópticas formadoras de imagen), sino simplemente la colección de su energía sobre la célula solar. Los concentradores para CPV pueden presentar muy diferentes arquitecturas y elementos ópticos, dando lugar a una gran variedad de posibles diseños. El primer elemento óptico que es atravesado por la luz del sol se llama Elemento Óptico Primario (POE en su nomenclatura anglosajona) y es el elemento más determinante a la hora de definir la forma y las propiedades del concentrador. El POE puede ser refractivo (lente) o reflexivo (espejo). Esta tesis se centra en los sistemas CPV que presentan lentes de Fresnel como POE, que son lentes refractivas delgadas y de bajo coste de producción que son capaces de concentrar la luz solar. El capítulo 1 expone una breve introducción a la óptica geométrica y no formadora de imagen (nonimaging), explicando sus fundamentos y conceptos básicos. Tras ello, la integración Köhler es presentada en detalle, explicando sus principios, válidos tanto para aplicaciones CPV como para iluminación. Una introducción a los conceptos fundamentales de CPV también ha sido incluida en este capítulo, donde se analizan las propiedades de las células solares multiunión y de los concentradores ópticos empleados en los sistemas CPV. El capítulo se cierra con una descripción de las tecnologías existentes empleadas para la fabricación de elementos ópticos que componen los concentradores. El capítulo 2 se centra principalmente en el diseño y desarrollo de los tres concentradores ópticos avanzados Fresnel Köhler que se presentan en esta tesis: Fresnel-Köhler (FK), Fresnel-Köhler curvo (DFK) y Fresnel-Köhler con cavidad (CFK). Todos ellos llevan a cabo integración Köhler y presentan una lente de Fresnel como su elemento óptico primario. Cada uno de estos concentradores CPV presenta sus propias propiedades y su propio procedimiento de diseño. Además, presentan todas las características que todo concentrador ha de tener: elevado factor de concentración, alta tolerancia de fabricación, alta eficiencia óptica, irradiancia uniforme sobre la superficie de la célula y bajo coste de producción. Los concentradores FK y DFK presentan una configuración de cuatro sectores para lograr la integración Köhler. Esto quiere decir que POE y SOE se dividen en cuatro sectores simétricos cada uno, y cada sector del POE trabaja conjuntamente con su correspondiente sector de SOE. La principal diferencia entre los dos concentradores es que el POE del FK es una lente de Fresnel plana, mientras que una lente curva de Fresnel es empleada como POE del DFK. El concentrador CFK incluye una cavidad de confinamiento externo integrada, que es un elemento óptico capaz de recuperar los rayos reflejados por la superficie de la célula con el fin de ser reabsorbidos por la misma. Por tanto, se aumenta la absorción de la luz, lo que implica un aumento en la eficiencia del módulo. Además, este capítulo también explica un método de diseño alternativo para los elementos faceteados, especialmente adecuado para las lentes curvas como el POE del DFK. El capítulo 3 se centra en la caracterización y medidas experimentales de los concentradores ópticos presentados en el capítulo 2, y describe sus procedimientos. Estos procedimientos son en general aplicables a cualquier concentrador basado en una lente de Fresnel, e incluyen tres tipos principales de medidas experimentales: eficiencia eléctrica, ángulo de aceptancia y uniformidad de la irradiancia en el plano de la célula. Los resultados que se muestran a lo largo de este capítulo validarán a través de medidas a sol real las características avanzadas que presentan los concentradores Köhler, y que se demuestran en el capítulo 2 mediante simulaciones de rayos. Cada concentrador (FK, DFK y CFK) está diseñado y optimizado teniendo en cuenta condiciones de operación realistas. Su rendimiento se modela de forma exhaustiva mediante el trazado de rayos en combinación con modelos distribuidos para la célula. La tolerancia es un asunto crítico de cara al proceso de fabricación, y ha de ser máxima para obtener sistemas de producción en masa rentables. Concentradores con tolerancias limitadas generan bajadas significativas de eficiencia a nivel de array, causadas por el desajuste de corrientes entre los diferentes módulos (principalmente debido a errores de alineación en la fabricación). En este sentido, la sección 3.5 presenta dos métodos matemáticos que estiman estas pérdidas por desajuste a nivel de array mediante un análisis de sus curvas I-V, y por tanto siendo innecesarias las medidas a nivel de mono-módulo. El capítulo 3 también describe la caracterización indoor de los elementos ópticos que componen los concentradores, es decir, de las lentes de Fresnel que actúan como POE y de los secundarios free-form. El objetivo de esta caracterización es el de evaluar los adecuados perfiles de las superficies y las transmisiones ópticas de los diferentes elementos analizados, y así hacer que el rendimiento del módulo sea el esperado. Esta tesis la cierra el capítulo 4, en el que la integración Köhler se presenta como una buena alternativa para obtener distribuciones uniformes en aplicaciones de iluminación de estado sólido (iluminación con LED), siendo particularmente eficaz cuando se requiere adicionalmente una buena mezcla de colores. En este capítulo esto se muestra a través del ejemplo particular de un concentrador DFK, el cual se ha utilizado para aplicaciones CPV en los capítulos anteriores. Otra alternativa para lograr mezclas cromáticas apropiadas está basada en un método ya conocido (deflexiones anómalas), y también se ha utilizado aquí para diseñar una lente TIR aplanética delgada. Esta lente cumple la conservación de étendue, asegurando así que no hay bloqueo ni dilución de luz simultáneamente. Ambos enfoques presentan claras ventajas sobre las técnicas clásicas empleadas en iluminación para obtener distribuciones de iluminación uniforme: difusores y mezcla caleidoscópica mediante guías de luz. ABSTRACT Concentrating Photovoltaics (CPV) is one of the most promising ways of reducing the cost of energy collected from the sun. This is possible thanks to both, very high-efficiency solar cells and a large decrease in the size of cells, which are made of costly semiconductor materials. Both issues are closely linked since high efficiency values are only possible with expensive cell materials and technologies, implying a compulsory area reduction if cost-effectiveness is desired. The reduction in the cell size requires that light coming from the sun must be redirected (i.e. concentrated) towards the cell position. This is achieved by placing an optical concentrator system on top of the cell. These CPV concentrators consist of different optical elements manufactured on cheap materials in order to maintain low production costs. The optimal framework for the design of concentrators is nonimaging optics. Nonimaging optics was first developed in the 60s decade and has been largely developed ever since. The aim of nonimaging devices is the efficient transfer of light power between the source and the receiver (sun and cell respectively in the case of CPV), disregarding image formation. Nonimaging systems are usually simple, comprised of fewer surfaces than imaging systems and are more tolerant to manufacturing errors. This renders nonimaging optics a fundamental tool, not only in the design of photovoltaic concentrators, but also in the design of other applications as illumination, projection and wireless optical communications. Nonimaging optical concentrators are well suited for CPV applications because the goal is not the reproduction of an exact image of the sun (as imaging optics would provide), but simply the collection of its energy on the solar cell. Concentrators for CPV may present very different architectures and optical elements, resulting in a vast variety of possible designs. The first optical element that sunlight goes through is called the Primary Optical Element (POE) and is the most determinant element in order to define the shape and properties of the whole concentrator. The POE can be either refractive (lens) or reflective (mirror). This thesis focuses on CPV systems based on Fresnel lenses as POE, which are thin and inexpensive refractive lenses able to concentrate sunlight. Chapter 1 exposes a short introduction to geometrical and nonimaging optics, explaining their fundamentals and basic concepts. Then, the Köhler integration is presented in detail, explaining its principles, valid for both applications: CPV and illumination. An introduction to CPV fundamental concepts is also included in this chapter, analyzing the properties of multijunction solar cells and optical concentrators employed in CPV systems. The chapter is closed with a description of the existing technologies employed for the manufacture of optical elements composing the concentrator. Chapter 2 is mainly devoted to the design and development of the three advanced Fresnel Köhler optical concentrators presented in this thesis work: Fresnel-Köhler (FK), Dome-shaped Fresnel-Köhler (DFK) and Cavity Fresnel-Köhler (CFK). They all perform Köhler integration and comprise a Fresnel lens as their Primary Optical Element. Each one of these CPV concentrators presents its own characteristics, properties and its own design procedure. Their performances include all the key issues in a concentrator: high concentration factor, large tolerances, high optical efficiency, uniform irradiance on the cell surface and low production cost. The FK and DFK concentrators present a 4-fold configuration in order to perform the Köhler integration. This means that POE and SOE are divided into four symmetric sectors each one, working each POE sector with its corresponding SOE sector by pairs. The main difference between both concentrators is that the POE of the FK is a flat Fresnel lens, while a dome-shaped (curved) Fresnel lens performs as the DFK’s POE. The CFK concentrator includes an integrated external confinement cavity, which is an optical element able to recover rays reflected by the cell surface in order to be re-absorbed by the cell. It increases the light absorption, entailing an increase in the efficiency of the module. Additionally, an alternative design method for faceted elements will also be explained, especially suitable for dome-shaped lenses as the POE of the DFK. Chapter 3 focuses on the characterization and experimental measurements of the optical concentrators presented in Chapter 2, describing their procedures. These procedures are in general applicable to any Fresnel-based concentrator as well and include three main types of experimental measurements: electrical efficiency, acceptance angle and irradiance uniformity at the solar cell plane. The results shown along this chapter will validate through outdoor measurements under real sun operation the advanced characteristics presented by the Köhler concentrators, which are demonstrated in Chapter 2 through raytrace simulation: high optical efficiency, large acceptance angle, insensitivity to manufacturing tolerances and very good irradiance uniformity on the cell surface. Each concentrator (FK, DFK and CFK) is designed and optimized looking at realistic performance characteristics. Their performances are modeled exhaustively using ray tracing combined with cell modeling, taking into account the major relevant factors. The tolerance is a critical issue when coming to the manufacturing process in order to obtain cost-effective mass-production systems. Concentrators with tight tolerances result in significant efficiency drops at array level caused by current mismatch among different modules (mainly due to manufacturing alignment errors). In this sense, Section 3.5 presents two mathematical methods that estimate these mismatch losses for a given array just by analyzing its full-array I-V curve, hence being unnecessary any single mono-module measurement. Chapter 3 also describes the indoor characterization of the optical elements composing the concentrators, i.e. the Fresnel lenses acting as POEs and the free-form SOEs. The aim of this characterization is to assess the proper surface profiles and optical transmissions of the different elements analyzed, so they will allow for the expected module performance. This thesis is closed by Chapter 4, in which Köhler integration is presented as a good approach to obtain uniform distributions in Solid State Lighting applications (i.e. illumination with LEDs), being particularly effective when dealing with color mixing requirements. This chapter shows it through the particular example of a DFK concentrator, which has been used for CPV applications in the previous chapters. An alternative known method for color mixing purposes (anomalous deflections) has also been used to design a thin aplanatic TIR lens. This lens fulfills conservation of étendue, thus ensuring no light blocking and no light dilution at the same time. Both approaches present clear advantages over the classical techniques employed in lighting to obtain uniform illumination distributions: diffusers and kaleidoscopic lightpipe mixing.

Development and characterization of an FK photovoltaic concentrator for maximum conversion efficiency

The outdoor measurements of a single-cell concentrator PV module reaching a regressed 35.6% efficiency and a maximum peak efficiency of 36.0% (both corrected @Tcell=25ºC) are presented. This is the result of the joint effort by LPI and Solar Junction to demonstrate the potential of combining their respective state-of-the-art concentrator optics and solar cells. The LPI concentrator used is an FK, which is an advanced nonimaging concentrator using 4-channel Köhler homogenization, with a primary Fresnel lens and a refractive secondary made of glass. Solar Junction’s cell is a triplejunction solar cell with the A-SLAMTM architecture using dilute-nitrides.

Self-organized colloidal quantum dots and metal nanoparticles for plasmon-enhanced intermediate-band solar cells

A colloidal deposition technique is presented to construct long-range ordered hybrid arrays of self-assembled quantum dots and metal nanoparticles. Quantum dots are promising for novel opto-electronic devices but, in most cases, their optical transitions of interest lack sufficient light absorption to provide a significant impact in their implementation. A potential solution is to couple the dots with localized plasmons in metal nanoparticles. The extreme confinement of light in the near-field produced by the nanoparticles can potentially boost the absorption in the quantum dots by up to two orders of magnitude. In this work, light extinction measurements are employed to probe the plasmon resonance of spherical gold nanoparticles in lead sulfide colloidal quantum dots and amorphous silicon thin-films. Mie theory computations are used to analyze the experimental results and determine the absorption enhancement that can be generated by the highly intense near-field produced in the vicinity of the gold nanoparticles at their surface plasmon resonance. The results presented here are of interest for the development of plasmon-enhanced colloidal nanostructured photovoltaic materials, such as colloidal quantum dot intermediate-band solar cells.