Scalable quantum memory in the ultrastrong coupling regime

Circuit quantum electrodynamics, consisting of superconducting artificial atoms coupled to on-chip resonators, represents a prime candidate to implement the scalable quantum computing architecture because of the presence of good tunability and controllability. Furthermore, recent advances have pushed the technology towards the ultrastrong coupling regime of light-matter interaction, where the qubit-resonator coupling strength reaches a considerable fraction of the resonator frequency. Here, we propose a qubit-resonator system operating in that regime, as a quantum memory device and study the storage and retrieval of quantum information in and from the Z(2) parity-protected quantum memory, within experimentally feasible schemes. We are also convinced that our proposal might pave a way to realize a scalable quantum random-access memory due to its fast storage and readout performances.

Compulsory heterosexuality and Caribbean queer identities: an investigation of Achy Obejas's Memory mambo and Shani Mootoo's Valmiki's daughter

Esta dissertação pretende investigar de que forma idéias construídas socialmente impõem a heterossexualidade e afetam indivíduos não heterosexuais das ilhas Caribenhas, conforme ilustrado nos romances Memory Mambo, da Cubana-Americana Achy Obejas e Valmikis Daughters, da Trinitária-Canadense Shani Mootoo. Este trabalho se concentra na análise de políticas sexuais ligadas à homossexualidade tanto nas ilhas do Caribe quanto nos Estados Unidos da América. Em Memory Mambo, a protagonista Juani Casas deseja entender como sua condição de exilada cubana molda sua identidade sexual e como seu lesbianismo afeta seus relacionamentos familiares e amorosos. Reconstruindo sua história através de uma memória não confiável, Juani procura descobrir como sua sexualidade e sua nacionalidade estão ligadas, para que ela possa conciliar as duas. Em Valmikis Daughter, Viveka Krishnu e seu pai Valmiki Krishnu tentam esconder seus verdadeiros desejos por causa dos comportamentos supostamente corretos que foram designados tanto para homens quanto para mulheres em Trinidad, e mais especificamente na sociedade indo-caribenha. Pai e filha sofrem com a opressão e tentam não se tornarem vítimas de homofobia constante, ele escondendo sua sexualidade e ela deixando a ilha. Assim, através da representação literária, Obejas e Mootoo participam de uma discussão necessária sobre as consequencias das políticas sexuais na construção identitária de Caribenhos que vivem nas ilhas ou em destinos diaspóricos

Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.

We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF states exceeding 10(4), a long retention time of over 4 × 10(4) s, and multibit memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible with simple processing techniques at low temperature for flexible devices made on plastic substrates.

Nonvolatile memory functionality of ZnO nanowire transistors controlled by mobile protons.

We demonstrated the nonvolatile memory functionality of ZnO nanowire field effect transistors (FETs) using mobile protons that are generated by high-pressure hydrogen annealing (HPHA) at relatively low temperature (400 °C). These ZnO nanowire devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We show that the memory characteristics are attributed to the movement of protons between the Si/SiO(2) interface and the SiO(2)/ZnO nanowire interface by the applied gate electric field. The memory mechanism is explained in terms of the tuning of interface properties, such as effective electric field, surface charge density, and surface barrier potential due to the movement of protons in the SiO(2) layer, consistent with the UV photoresponse characteristics of nanowire memory devices. Our study will further provide a useful route of creating memory functionality and incorporating proton-based storage elements onto a modified CMOS platform for FET memory devices using nanomaterials.