Dynamics of laser produced silver plasma under film deposition conditions studied using optical emission spectroscopy

Laser produced plasma from silver is generated using a Q-switched Nd:YAG laser. Optical emission spectroscopy is used to carry out time of flight (TOF) analysis of atomic particles. An anomalous double peak profile in the TOF distribution is observed at low pressure. A collection of slower species emerge at reduced pressure below 4 X lO-3 mbar and this species has a greater velocity spread. At high pressure the plasma expansion follows the shockwave model with cylindrical symmetry whereas at reduced pressure it shows unsteady adiabatic expansion (UAE). During UAE the species show a parabolic increases in the expansion time with radial distance whereas during shock wave expansion the exponent is less than one. The angular distribution of the ablated species in the plume is obtained from the measurement of optical density of thin films deposited on to glass substrates kept perpendicular to the plume. There is a sharp variation in the film thickness away from the film centre due to asymmetries in the plume.

Optical studies of phthalocyanine molecules in PVA film

Optical absorption and emission spectral studies of various phthalocyanine (Pc) molecules in PVA matrix have been reported for the first time. The recorded spectra are analyzed to get the important spectral parameters, such as optical absorption cross-section (σa), emission cross-section (σe), oscillator strength (f), fluorescence bandwidth (Δλ), emission wavelength (λ), radiative decay time (τ) and optical gain (G). Analysis shows that the emission cross-section and optical gain are maximum in the NdHPc2-doped PVA matrix. However, a comparison of the calculated emission parameters with that of borate glass matrix show that they are many times smaller in the present matrix.

Low-voltage driven ZnS:Mn MIS and MISIM thin film electroluminescent devices with Eu2O3 insulator layer

AC thin film electroluminescent devices of MIS and MISIM have been fabricated with a novel dielectric layer of Eu2O3 as an insulator. The threshold voltage for light emission is found to depend strongly on the frequency of excitation source in these devices. These devices are fabricated with an active layer of ZnS:Mn and a novel dielectric layer of Eu2O3 as an insulator. The observed frequency dependence of brightness-voltage characteristics has been explained on the basis of the loss characteristic of the insulator layer. Changes in the threshold voltage and brightness with variation in emitting or insulating film thickness have been investigated in metal-insulator-semiconductor (MIS) structures. It has been found that the decrease in brightness occurring with decreasing ZnS layer thickness can be compensated by an increase in brightness obtained by reducing the insulator thickness. The optimal condition for low threshold voltage and higher stability has been shown to occur when the active layer to insulator thickness ratio lies between one and two.

Screen printed nanosized ZnO thick film

Nanosized ZnO was prepared by polyol synthesis. Fluorescence spectrum of the ZnO colloid at varying pump intensities was studied. The powder was extracted and characterized by XRD and BET. The extracted powder was screen printed on glass substrates using ethyl cellulose as binder and turpinol as solvent. Coherent back scattering studies were performed on the screen printed sample which showed evidence of weak localization. The screen printed pattern showed strong UV emission.

Synthesis and Characterisation of Zinc Gallate Based Phosphors for Thin Film Electroluminescent Devices

Department of Physics, Cochin University of Science and Technology

Studies on Laser Induced and RF Sputtered Plasma using Optical Emission Spectroscopy and Langmuir Probe

The main objective of the present study is to understand different mechanisms involved in the production and evolution of plasma by the pulsed laser ablation and radio frequency magnetron sputtering. These two methods are of particular interest, as these are well accomplished methods used for surface coatings, nanostructure fabrications and other thin film devices fabrications. Material science researchers all over the world are involved in the development of devices based on transparent conducting oxide (TCO) thin films. Our laboratory has been involved in the development of TCO devices like thin film diodes using zinc oxide (ZnO) and zinc magnesium oxide (ZnMgO), thin film transistors (TFT's) using zinc indium oxide and zinc indium tin oxide, and some electroluminescent (EL) devices by pulsed laser ablation and RF magnetron sputtering.In contrast to the extensive literature relating to pure ZnO and other thin films produced by various deposition techniques, there appears to have been relatively little effort directed towards the characterization of plasmas from which such films are produced. The knowledge of plasma dynamics corresponding to the variations in the input parameters of ablation and sputtering, with the kind of laser/magnetron used for the generation of plasma, is limited. To improve the quality of the deposited films for desired application, a sound understanding of the plume dynamics, physical and chemical properties of the species in the plume is required. Generally, there is a correlation between the plume dynamics and the structural properties of the films deposited. Thus the study of the characteristics of the plume contributes to a better understanding and control of the deposition process itself. The hydrodynamic expansion of the plume, the composition, and SIze distribution of clusters depend not only on initial conditions of plasma production but also on the ambient gas composition and pressure. The growth and deposition of the films are detennined by the thermodynamic parameters of the target material and initial conditions such as electron temperature and density of the plasma.For optimizing the deposition parameters of various films (stoichiometric or otherwise), in-situ or ex-situ monitoring of plasma plume dynamics become necessary for the purpose of repeatability and reliability. With this in mind, the plume dynamics and compositions of laser ablated and RF magnetron sputtered zinc oxide plasmas have been investigated. The plasmas studied were produced at conditions employed typically for the deposition of ZnO films by both methods. Apart from this two component ZnO plasma, a multi-component material (lead zirconium titanate) was ablated and plasma was characterized.

Amorphous Oxide Transparent Thin Films: Growth, Characterisation and Application to Thin Film Transistors

This work mainly concentrate to understand the optical and electrical properties of amorphous zinc tin oxide and amorphous zinc indium tin oxide thin films for TFT applications. Amorphous materials are promising in achieving better device performance on temperature sensitive substrates compared to polycrystalline materials. Most of these amorphous oxides are multicomponent and as such there exists the need for an optimized chemical composition. For this we have to make individual targets with required chemical composition to use it in conventional thin film deposition techniques like PLD and sputtering. Instead, if we use separate targets for each of the cationic element and if separately control the power during the simultaneous sputtering process, then we can change the chemical composition by simply adjusting the sputtering power. This is what is done in co-sputtering technique. Eventhough there had some reports about thin film deposition using this technique, there was no reports about the use of this technique in TFT fabrication until very recent time. Hence in this work, co-sputtering has performed as a major technique for thin film deposition and TFT fabrication. PLD were also performed as it is a relatively new technique and allows the use high oxygen pressure during deposition. This helps to control the carrier density in the channel and also favours the smooth film surface. Both these properties are crucial in TFT.Zinc tin oxide material is interesting in the sense that it does not contain costly indium. Eventhough some works were already reported in ZTO based TFTs, there was no systematic study about ZTO thin film's various optoelectronic properties from a TFT manufacturing perspective. Attempts have made to analyse the ZTO films prepared by PLD and co-sputtering. As more type of cations present in the film, chances are high to form an amorphous phase. Zinc indium tin oxide is studied as a multicomponent oxide material suitable for TFT fabrication.

Selective mode excitation in dye-doped DNA polyvinyl alcohol thin film

A solid-state laser based on a dye-doped deoxyribonucleic acid (DNA) matrix is described. A thin solid film of DNA has been fabricated by treating with polyvinyl alcohol (PVA) and used as a host for the laser dye Rhodamine 6G. The edge emitted spectrum clearly indicated the existence of laser modes and amplified spontaneous emission. Lasing was obtained by pumping with a frequency-doubled Nd:YAG laser at 532 nm. For a pump energy of 10 mJ/pulse, an intense line with FWHM ≈0.2 nm was observed at 566 nm due to selective mode excitation.

Effect of ambient gas on the expansion dynamics of plasma plume formed by laser blow off of thin film

A study has been carried out to understand the influence of ambient gases on the dynamics of laser-blow-off plumes of multi-layered LiF–C thin film. Plume images at various time intervals ranging from 100 to 3000 ns have been recorded using an intensified CCD camera. Enhancement in the plume intensity and change in size and shape occurs on introducing ambient gases and these changes are highly dependent on the nature and composition of the ambient gas used. Velocity of the plume was found to be higher in helium ambient whereas intensity enhancement is greater in argon environment. The plume shapes have maximum size at 10−2 and 10−1 Torr of Ar and He pressures, respectively. As the background pressure increases further (>10−2 Torr: depending on the nature of gas), the plume gets compressed/focused in the lateral direction. Internal structure formation and turbulences are observed at higher pressures (>10−1 Torr) in both ambient gases.

Metglas thin film based magnetostrictive transducers for use in long period fibre grating sensors

Metallic glass alloy Metglas 2826 MB based amorphous magnetic thin films were fabricated by the thermal evaporation technique. Transmission electron micrographs and electron diffraction pattern showed the amorphous nature of the films. Composition of the films was analyzed employing X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy techniques. The film was integrated to a long period fibre grating. It was observed that the resonance wavelength of the fibre grating decreased with an increase in the magnetic field. Change in the resonance wavelength was minimal at higher magnetic fields. Field dependent magnetostriction values revealed the potential application of these films in magnetostrictive sensor devices.

Synthesis, Growth and Characterization of Oxide Phosphors for Thin Film Electroluminescent Devices

Department of Physics, Cochin University of Science and Technology

Application of Imaging to Study the Evolution and Dynamics of Laser Produced Plasma from Solid and Thin Film Li Targets

The present thesis report the results obtained from the studies carried out on the laser blow off plasma (LBO) from LiF-C (Lithium Fluoride with Carbon) thin film target, which is of particular importance in Tokamak plasma diagnostics. Keeping in view of its significance, plasma generated by the irradiation of thin film target by nanosecond laser pulses from an Nd:YAG laser over the thin film target has been characterized by fast photography using intensified CCD. In comparison to other diagnostic techniques, imaging studies provide better understanding of plasma geometry (size, shape, divergence etc) and structural formations inside the plume during different stages of expansion.

Highly conductive and transparent ZnO thin film using Chemical Spray Pyrolysis technique: Effect of doping and deposition parameters

In the present work we report the preparation details studies on ZnO thin films. ZnO thin films are prepared using cost effective deposition technique viz., Chemical Spray Pyrolysis (CSP). The method is very effective for large area preparation of the ZnO thin film. A new post-deposition process could also be developed to avoid the adsorption of oxygen that usually occurs after the spraying process i.e., while cooling. Studies were done by changing the various deposition parameters for optimizing the properties of ZnO thin film. Moreover, different methods of doping using various elements are also tried to enhance the conductivity and transparency of the film to make these suitable for various optoelectronic applications.

Studies on electroluminescence using Powder and thin film devices

The subject of electroluminescence has currently acquired great importance because of its potential applications in display systems of a wide variety. A large number of scientists working in commercial, governmental as well as academic institutions all over the world are at present engaged in the intense effort to develop new and efficient phosphor materials and electroluminescent devices. This thesis presents the work carried out by the author in this field during the past few years. The studies discussed in this thesis are mostly confined to the development of some new phosphor materials, their uses in powder and thin film electroluminescent devices and to their electrical and spectral characteristics. Care has been taken to bring' out the physics involved in all the above aspects of the phenomenon

Prospects of sprayed CZTS thin film solar cells from the perspective of material characterization and device performance

This thesis is devoted to the development of a relatively new, rapidly developing quaternary semiconducting material (viz., Cu2ZnSnS4) used for photovoltaic applications. This semiconductor, commonly known as CZTS, is closely related to a family of materials that have been used for solar cell applications. It is a compound semiconductor made of copper, zinc, tin and sulfur, which are sufficiently abundant elements; none of them is harmful to the environment even at large scale usage. Aim of this study is to fabricate CZTS solar cells through chemical spray pyrolysis (CSP) technique. At first the influence of various spray parameters like substrate temperature, spray rate, precursor ratio etc. on the opto-electronic properties of CZTS films will be studied in detail. Then the fabrication of CZTS/In2S3 hetero junctions and various ways to improve the performance parameters will be tried