878 resultados para Wolan, Andrzej, 1530-1616.


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This paper presents an automatic speaker recognition system for intelligence applications. The system has to provide functionalities for a speaker skimming application in which databases of recorded conversations belonging to an ongoing investigation can be annotated and quickly browsed by an operator. The paper discusses the criticalities introduced by the characteristics of the audio signals under consideration - in particular background noise and channel/coding distortions - as well as the requirements and functionalities of the system under development. It is shown that the performance of state-of-the-art approaches degrades significantly in presence of moderately high background noise. Finally, a novel speaker recognizer based on phonetic features and an ensemble classifier is presented. Results show that the proposed approach improves performance on clean audio, and suggest that it can be employed towards improved real-world robustness. © EURASIP, 2009.

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采用ISSR分子标记对中国水域隶属于不同江豚(Neophocaena phocaenoides)亚种的两个群体即长江群体和渤海群体的遗传多样性进行分析。用19条ISSR引物及3对引物组合对两个群体共36个样品的基因组DNA进行PCR扩增,共得到115个清晰的扩增位点,其中多态性位点48个,多态位点百分率(PPL)为41.71%。POPGENE分析结果表明:两个江豚群体的总体遗传多样性水平相对较低(He=0.1643;Ho=0.2413);长江群体的遗传多样性水平(He=0.1530;Ho=0.2223)稍

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建立了微囊藻毒素的一种新的测定方法。在Ni2 + 硼砂为支持电解质的体系中 ,微囊藻毒素 RR在 -1 5 5V产生一个极谱波。在此实验条件下 ,微囊藻毒素在 1 5 0~8 0 0mg L浓度范围内 ,极谱波高与微囊藻毒素浓度有良好的线性关系 ,线性相关系数为 0 998,检测限为 0 0 7mg L。同时对测定条件进行了研究 ,并探讨了极谱电流的性质 ,认为该极谱波是一个催化氢波 ;常见无机物和有机物不干扰本法测定 ,具有良好的选择性。该方法用于实际水样测定 ,获得了满意结果

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2002年6—8月对南方鲇(SilurusmeridionalisChen)(初始体重12.93±0.13g)进行人工配合饲料的喂养实验。实验以白鱼粉、玉米油、糊化玉米淀粉分别作为蛋白质、脂肪和碳水化合物(CBH)原料。配制等蛋白质(含量为40%),等脂肪(含量为10%),不同CBH梯度的6组饲料,饲料CBH水平分别设计为0%,6%,12%,18%,24%,30%。实验每水平设4个重复,采用室内循环水养殖系统,在27.5℃下以饱足日粮水平喂养8周。实验结果表明:随着饲料淀粉水平的增加,摄食率和生长率呈先增

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Hybrid nanostructured materials can exhibit different properties than their constituent components, and can enable decoupled engineering of energy conversion and transport functions. Novel means of building hybrid assemblies of crystalline C 60 and carbon nanotubes (CNTs) are presented, wherein aligned CNT films direct the crystallization and orientation of C 60 rods from solution. In these hybrid films, the C 60 rods are oriented parallel to the direction of the CNTs throughout the thickness of the film. High-resolution imaging shows that the crystals incorporate CNTs during growth, yet grazing-incidence X-ray diffraction (GIXD) shows that the crystal structure of the C 60 rods is not perturbed by the CNTs. Growth kinetics of the C 60 rods are enhanced 8-fold on CNTs compared to bare Si, emphasizing the importance of the aligned, porous morphology of the CNT films as well as the selective surface interactions between C 60 and CNTs. Finally, it is shown how hybrid C 60-CNT films can be integrated electrically and employed as UV detectors with a high photoconductive gain and a responsivity of 10 5 A W -1 at low biases (± 0.5 V). The finding that CNTs can induce rapid, directional crystallization of molecules from solution may have broader implications to the science and applications of crystal growth, such as for inorganic nanocrystals, proteins, and synthetic polymers. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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An optical and irreversible temperature sensor (e.g., a time-temperature integrator) is reported based on a mechanically embossed chiral-nematic polymer network. The polymer consists of a chemical and a physical (hydrogen-bonded) network and has a reflection band in the visible wavelength range. The sensors are produced by mechanical embossing at elevated temperatures. A relative large compressive deformation (up to 10%) is obtained inducing a shift to shorter wavelength of the reflection band (>30 nm). After embossing, a temperature sensor is obtained that exhibits an irreversible optical response. A permanent color shift to longer wavelengths (red) is observed upon heating of the polymer material to temperatures above the glass transition temperature. It is illustrated that the observed permanent color shift is related to shape memory in the polymer material. The films can be printed on a foil, thus showing that these sensors are potentially interesting as time-temperature integrators for applications in food and pharmaceutical products. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm 2/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth. © 2012 American Chemical Society.

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In conventional planar growth of bulk III-V materials, a slow growth rate favors high crystallographic quality, optical quality, and purity of the resulting material. Surprisingly, we observe exactly the opposite effect for Au-assisted GaAs nanowire growth. By employing a rapid growth rate, the resulting nanowires are markedly less tapered, are free of planar crystallographic defects, and have very high purity with minimal intrinsic dopant incorporation. Importantly, carrier lifetimes are not adversely affected. These results reveal intriguing behavior in the growth of nanoscale materials, and represent a significant advance toward the rational growth of nanowires for device applications.

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We demonstrate vertically aligned epitaxial GaAs nanowires of excellent crystallographic quality and optimal shape, grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. This is achieved by a two-temperature growth procedure, consisting of a brief initial high-temperature growth step followed by prolonged growth at a lower temperature. The initial high-temperature step is essential for obtaining straight, vertically aligned epitaxial nanowires on the (111)B GaAs substrate. The lower temperature employed for subsequent growth imparts superior nanowire morphology and crystallographic quality by minimizing radial growth and eliminating twinning defects. Photoluminescence measurements confirm the excellent optical quality of these two-temperature grown nanowires. Two mechanisms are proposed to explain the success of this two-temperature growth process, one involving Au nanoparticle-GaAs interface conditions and the other involving melting-solidification temperature hysteresis of the Au-Ga nanoparticle alloy.

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Low-temperature time-resolved photoluminescence spectroscopy is used to probe the dynamics of photoexcited carriers in single InP nanowires. At early times after pulsed excitation, the photoluminescence line shape displays a characteristic broadening, consistent with emission from a degenerate, high-density electron-hole plasma. As the electron-hole plasma cools and the carrier density decreases, the emission rapidly converges toward a relatively narrow band consistent with free exciton emission from the InP nanowire. The free excitons in these single InP nanowires exhibit recombination lifetimes closely approaching that measured in a high-quality epilayer, suggesting that in these InP nanowires, electrons and holes are relatively insensitive to surface states. This results in higher quantum efficiencies than other single-nanowire systems as well as significant state-filling and band gap renormalization, which is observed at high electron-hole carrier densities.

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Nonequilibrium spin distributions in single GaAs/AlGaAs core-shell nanowires are excited using resonant polarized excitation at 10 K. At all excitation energies, we observe strong photoluminescence polarization due to suppressed radiative recombination of excitons with dipoles aligned perpendicular to the nanowire. Excitation resonances are observed at 1- or 2-LO phonon energies above the exciton ground states. Using rate equation modeling, we show that, at the lowest energies, strongly nonequilibrium spin distributions are present and we estimate their spin relaxation rate.

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We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal-organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the strong influence of nanowire density on nanowire height, tapering, and base shape specific to the nanowires with high In composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Energy dispersive X-ray spectroscopy analysis together with high-resolution electron microscopy study of individual InGaAs nanowires shows large In/Ga compositional variation along the nanowire supporting the present diffusion model. Photoluminescence spectra exhibit a red shift with decreasing nanowire density due to the higher degree of In incorporation in more sparsely distributed InGaAs nanowires.