997 resultados para Tracer technique


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A technique for fabrication of thin-film circuits for microwave integrated circuit (MIC) application is presented. This low-cost fabrication technique utilizes laser direct write of copper patterns on alumina substrates. The method obviates the need for photomasks and photolithography. The film deposition mechanism, deposit film analysis, and MIC fabrication sequence are presented. Performance evaluation of MICs fabricated using this technique is also included

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The increasing variability in device leakage has made the design of keepers for wide OR structures a challenging task. The conventional feedback keepers (CONV) can no longer improve the performance of wide dynamic gates for the future technologies. In this paper, we propose an adaptive keeper technique called rate sensing keeper (RSK) that enables faster switching and tracks the variation across different process corners. It can switch upto 1.9x faster (for 20 legs) than CONV and can scale upto 32 legs as against 20 legs for CONV in a 130-nm 1.2-V process. The delay tracking is within 8% across the different process corners. We demonstrate the circuit operation of RSK using a 32 x 8 register file implemented in an industrial 130-nm 1.2-V CMOS process. The performance of individual dynamic logic gates are also evaluated on chip for various keeper techniques. We show that the RSK technique gives superior performance compared to the other alternatives such as Conditional Keeper (CKP) and current mirror-based keeper (LCR).

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Multilayer lithium tantalate thin films were deposited on Pt-Si Si(111)/SiO2/TiO2/Pt(111)]substrates by sol-gel process. The films were annealed at different annealing temperatures (300, 450 and 650 degrees C) for 15 min. The films are polycrystalline at 650 degrees C and at other annealing conditions below 650 degrees C the films are in amorphous state. The films were characterized using X-ray diffraction, atomic force microscopy (AFM) and Raman spectroscopy. The AFM of images show the formation of nanograins of uniform size (50 nm) at 650 degrees C. These polycrystalline films exhibit spontaneous polarization of 1.5 mu C/cm(2) at an application of 100 kV/cm. The dielectric constant of multilayer film is very small (6.4 at 10 kHz) as compared to that of single crystal. (C) 2010 Elsevier B.V. All rights reserved.

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A novel detection technique to estimate the amount of chirp in fiber Bragg gratings (FBGs) is proposed. This method is based on the fact that reflectivity at central wavelength of FBG reflection changes with strain/temperature gradient (linear chirp) applied to the same. Transfer matrix approach was used to vary different grating parameters (length, strength and apodization) to optimize variation of reflectivity with linear chirp. Analysis is done for different sets of `FBG length-refractive index strength' combinations for which reflectivity vary linearly with linear chirp over a decent measurement range. This article acts as a guideline to choose appropriate grating parameters in designing sensing apparatus based on change in reflectivity at central wavelength of FBG reflection.

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An oscillating droplet method combined with electromagnetic levitation has been applied to determine the surface tensions of liquid pure iron, nickel and iron-nickel alloys as a function of the temperature. The natural frequency of the oscillating droplet is evaluated using a Fourier analyser. The theoretical background of this method and the experimental set-up were described, and the influence of magnetic field strength was also discussed. The experimental results were compared with those of other investigators and interpreted using theoretical models (Butler's equation, subregular and perfect solution model for the surface phase).

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An oscillating droplet method combined with electromagnetic levitation technique has been applied to determine the surface tensions of liquid nickel sulphur alloys as a function of the temperature and composition. The natural frequency of the oscillating droplet is evaluated using a Fourier analyser, and the influence of magnetic field strength on the surface tension was considered. Furthermore, the applicability of Butler's equation and subregular solution model for the surface was shown to predict the surface tension of the systems containing the surface active elements.

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The integrated diffusion coefficient of the phases and the tracer diffusion coefficients of the species are determined in the Nb-Si system by the diffusion couple technique. The diffusion rate of Si is found to be faster than that of Nb in both the NbSi2 and Nb5Si3 phases. The possible atomic mechanism of diffusion is discussed based on the crystal structure and on available details of the defect concentration data. The faster diffusion rate of Si in the Nb5Si3 phase is found to be unusual. The growth mechanism of the phases is also discussed on the basis of the data calculated in this study. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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A hybrid technique to model two dimensional fracture problems which makes use of displacement discontinuity and direct boundary element method is presented. Direct boundary element method is used to model the finite domain of the body, while displacement discontinuity elements are utilized to represent the cracks. Thus the advantages of the component methods are effectively combined. This method has been implemented in a computer program and numerical results which show the accuracy of the present method are presented. The cases of bodies containing edge cracks as well as multiple cracks are considered. A direct method and an iterative technique are described. The present hybrid method is most suitable for modeling problems invoking crack propagation.

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Tin sulfide (SnS) is a material of interest for use as an absorber in low cost solar cells. Single crystals of SnS were grown by the physical vapor deposition technique. The grown crystals were characterized to evaluate the composition, structure, morphology, electrical and optical properties using appropriate techniques. The composition analysis indicated that the crystals were nearly stoichiometric with Sn-to-S atomic percent ratio of 1.02. Study of their morphology revealed the layered type growth mechanism with low surface roughness. The grown crystals had orthorhombic structure with (0 4 0) orientation. They exhibited an indirect optical band gap of 1.06 eV and direct band gap of 1.21 eV with high absorption coefficient (up to 10(3) cm(-1)) above the fundamental absorption edge. The grown crystals were of p-type with an electrical resistivity of 120 Omega cm and carrier concentration 1.52 x 10(15) cm(-3). Analysis of optical absorption and diffuse reflectance spectra showed the presence of a wide absorption band in the wavelength range 300-1200 nm, which closely matches with a significant part of solar radiation spectrum. The obtained results were discussed to assess the suitability of the SnS crystal for the fabrication of optoelectronic devices. (C) 2011 Elsevier B.V. All rights reserved.

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Gd2O3:Eu3+ (4 mol%) nanophosphor co-doped with Li+ ions have been synthesized by low-temperature solution combustion technique in a short time. Powder X-ray diffractometer (PXRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR), UV-VIS and photoluminescence (PL) techniques have been employed to characterize the synthesized nanoparticles. It is found that the lattice of Gd2O3:Eu3+ phosphor transforms from monoclinic to cubic as the Li+-ions are doped. Upon 254 nm excitation, the phosphor showed characteristic luminescence D-5(0) -> F-7(J) (J= 0-4) of the Eu3+ ions. The electronic transition located at 626 nm (D-5(0) -> F-7(2)) of Eu3+ ions was stronger than the magnetic dipole transition located at 595 nm (D-5(0) -> F-7(1)). Furthermore, the effects of the Li+ co-doping as well as calcinations temperature on the PL properties have been studied. The results show that incorporation of Li+ ions in Gd2O3:Eu3+ lattice could induce a remarkable improvement of their PL intensity. The emission intensity was observed to be enhanced four times than that of with out Li+-doped Gd2O3:Eu3+. (C) 2010 Elsevier B.V. All rights reserved,

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A new method based on analysis of a single diffraction pattern is proposed to measure deflections in micro-cantilever (MC) based sensor probes, achieving typical deflection resolutions of 1nm and surface stress changes of 50 mu N/m. The proposed method employs a double MC structure where the deflection of one of the micro-cantilevers relative to the other due to surface stress changes results in a linear shift of intensity maxima of the Fraunhofer diffraction pattern of the transilluminated MC. Measurement of such shifts in the intensity maxima of a particular order along the length of the structure can be done to an accuracy of 0.01mm leading to the proposed sensitivity of deflection measurement in a typical microcantilever. This method can overcome the fundamental measurement sensitivity limit set by diffraction and pointing stability of laser beam in the widely used Optical Beam Deflection method (OBDM).

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When examined using continuous wave electron paramagnetic resonance and nuclear magnetic resonance spectrometers, the high T-c superconductors give rise to intense, low field, 'non-resonant' absorption signals in the superconducting state. This phenomenon can be used as a highly sensitive, contactless technique for the detection and characterization of superconductivity even in samples containing only minute amounts of the superconducting phase. Further, it can also be applied to the determination of material parameters of interest such as J(c) and H-c2 in addition to being a powerful way of distinguishing between weak-link superconductivity and bulk superconductivity. The details of these aspects are discussed

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The sorting of crystals of (+/-)-4-methoxyphenyl 1-phenylethyl ketone into its enantiomers is facilitated by crystallisation in a cellular grid made of filter paper.

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The use of microwave heating technique for the acceleration of ortho ester Claisen rearrangement (a three step transformation) is described. Irradiation of a DMF solution of the allyl alcohol 5, triethyl orthoacetate and propionic acid (catalytic) in an Erlenmeyer flask for 10 minutes in a microwave oven generated the ester 8 in 83% yield. Analogously, ortho ester Claisen rearrangement of a variety of allyl and propargyl alcohols (9, 12-22) were achieved. The formation of the diester 10 from 2-butyne-1,4-diol (9) via the ortho ester Claisen rearrangement of two allyl alcohol moieties (involving sh steps) in 15 minutes, demonstrates the versatility of the microwave heating technique.