Silicon in plant disease control

All essential nutrients can affect the incidence and severity of plant diseases. Although silicon (Si) is not considered as an essential nutrient for plants, it stands out for its potential to decrease disease intensity in many crops. The mechanism of Si action in plant resistance is still unclear. Si deposition in plant cell walls raised the hypothesis of a possible physical barrier to pathogen penetration. However, the increased activity of phenolic compounds, polyphenol oxidases and peroxidases in plants treated with Si demonstrates the involvement of this element in the induction of plant defense responses. The studies examined in this review address the role of Si in disease control and the possible mechanisms involved in the mode of Si action in disease resistance in plants.

Synthesis and characterization of zeolite NaP using kaolin waste as a source of silicon and aluminum

The synthesis of zeolite NaP using kaolin waste, from the Amazon region, as a predominant source of silicon and aluminum has been studied. The zeolitisation process occurred in hydrothermal conditions using static autoclaving and the effects of time, temperature, and the Si/Al ratio were investigated. The starting material and the phases formed as reaction products were characterized by XRD, SEM and FTIR. The results showed that pure zeolite NaP is hydrothermally synthesized, at 100 °C for 20 hours, using metakaolin waste material in alkaline medium in presence of additional silica. The XRD and SEM analyses indicate that the synthesized zeolite presents good crystallinity.

Cycling of nutrients and silicon in pigeonpea and pearl millet monoculture and intercropping

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of argon ion bombardment on amorphous silicon carbonitride films

Amorphous silicon carbonitride (a-SiCN:H) films were synthesized by radiofrequency (RF) Plasma Enhanced Vapor Chemical Deposition (PECVD) using hexamethyldisilazane (HMDSN) as precursor compound. Then, the films were post-treated by Plasma Immersion Ion Implantation (PIII) in argon atmosphere from 15 to 60 min The hardness of the film enhanced after ion implantation, and the sample treated at 45 min process showed hardness greater than sixfold that of the untreated sample. This result is explained by the crosslinking and densification of the structure Films were exposed to oxygen plasma for determining of the etching rate. It decreased monotonically from 33 angstrom/min to 19 angstrom/min for the range of process time, confirming structural alterations. Hydrophobic character of the a-SiCN:H films were modified immediately after ion bombardment, due to incorporation of polar groups. However, the high wettability of the films acquired by the ion implantation was diminished after aging in air. Therefore, argon PIII made a-SiCN.H films mechanically more resistant and altered their hydrophobic character.

Study of magnetic field enhanced plasma immersion ion implantation in Silicon

A comparison between experimental measurements and numerical calculations of the ion current distribution in plasma immersion ion implantation (PIII) with external magnetic field is presented. Later, Silicon samples were implanted with nitrogen ion to analyze the effect on them. The magnetic field considered is essentially non-uniform and is generated by two magnetic coils installed on vacuum chamber. The presence of both, electric and magnetic field in PIII create a crossed ExB field system, promoting drift velocity of the plasma around the target. The results found shows that magnetized electrons drifting in ExB field provide electron-neutral collision. The efficient ionization increases the plasma density around the target where a magnetic confinement is formed. As result, the ion current density increases, promoting significant changes in the samples surface properties, especially in the surface wettability.

Bonding of facial silicon with nanoparticles to an acrylic resin substrate

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Unusual broadening of the NIR luminescence of Er3+-doped Nb2O5 nanocrystals embedded in silica host: Preparation and their structural and spectroscopic study for photonics applications

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Laser stimulated piezoelectricity in Er3+ doped GeO2-Bi2O3 glasses containing silicon nanocrystals

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Amorphous silicon carbonitride films modified by plasma immersion ion implantation

Amorphous silicon carbonitride (a-SiCN:H) films were deposited from hexamethyldisilazane (HMDSN) organic compounds via radio-frequency (RF) glow discharges. Afterwards the films were bombarded, from 15 to 60 min, with nitrogen ions using Plasma Immersion Ion Implantation (PIII) technique. X-ray photoelectron spectroscopy (XPS) showed that O-containing groups increased, while C-C and/or C-H groups decreased with treatment time. This result indicates chemical alterations of the polymeric films with the introduction of polar groups on the surface, which changes the surface wettability. In fact, the hydrophobic nature of a-SiCN:H films (contact angle of 100 degrees) was changed by nitrogen ion implantation and, and after aging in atmosphere air, all samples preserved the hydrophilic character (contact angle <80 degrees) independently of treatment time. The exposure of the films to oxygen plasma was performed to evaluate the etching rate, which dropped from 24% to 6% while the implantation time increased from 15 to 60 min. This data suggests that Pill increased the film structure strength, probably due to crosslinking enhancement of polymeric chains. Therefore, the treatment with nitrogen ions via Pill process was effective to modify the wettability and oxidation resistance of a-SiCN:H films. (C) 2014 Elsevier Ltd. All rights reserved.

One-dimensional silicon and germanium nanostructures with no carbon analogues

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

SILICON IN ROW AND NITROGEN IN TOPDRESSING FERTILIZATION ON RICE UNDER DRY LAND AND SPRINKLER IRRIGATION CONDITIONS

The objective of this work was to evaluate the effects of silicon application adjusted with nitrogen fertilization via top-dressing on grain productivity, the silicon contents of the soil, in the plant tissue and nitrogen contents in dry and irrigated conditions. The experimental outlining was from designed blocks with subdivided parcels and four repetitions. The treatments consisted of culture system (dry and irrigated) and the under parcels by the combination of silicon (0 and 100 kg ha(-1)), in magnesium and calcium silicate form (with 23% of SiO2), and four doses of N (urea) via top-dressing (0, 30, 60 and 90 kg ha(-1)). Silicon application at sowing furrow was a viable technique because it provided significant increase in the content of this element in the root growth of rice. The application of silicon in the sowing furrow did not change the content of the element nor the nitrogen nutrition in rice plants. The nitrogen application reduced the silicon content and increased nitrogen nutrition in rice plants. Silicon application at sowing furrow provided no increase in rice grain yield. When there was no water limitation to nitrogen fertilization enhanced linearly on rice grain yield, whereas under water stress the effect of nitrogen fertilization was limited.

Endogenous and exogenous teeth whitening through gel-based bleaching hydrogen peroxide (35%) with the aid of silicon guide

The aim of this study is to demonstrate through a case report, a proposed treatment for discolored teeth, with and without pulp vitality, by the technique of external and internal tooth bleaching with hydrogen peroxide to 35% Lase Peroxide Sensy (DMC) using Whitening Lase II Device (DMC), and a silicone guide (3M ESPE) in the palatine portion of the upper teeth. In this clinical case, the patient had darkened dental elements 11 and 22, and dissatisfaction with the coloring of other elements. It was observed that the techniques used and the materials chosen allowed for an excellent aesthetic result, with technical simplicity and low cost, and minimal occurrence of signs and symptoms

Surface morphology and structural modification induced by femtosecond pulses in hydrogenated amorphous silicon films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Foliar or soil applications of silicon alleviate water-deficit stress of potato plants

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)