Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1-xSnx nanowires

The development of non-equilibrium group IV nanoscale alloys is critical to achieving new functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap elemental semiconductor. Here, we describe the fabrication of uniform diameter, direct bandgap Ge1-xSnx alloy nanowires, with a Sn incorporation up to 9.2[thinsp]at.%, far in excess of the equilibrium solubility of Sn in bulk Ge, through a conventional catalytic bottom-up growth paradigm using noble metal and metal alloy catalysts. Metal alloy catalysts permitted a greater inclusion of Sn in Ge nanowires compared with conventional Au catalysts, when used during vapour-liquid-solid growth. The addition of an annealing step close to the Ge-Sn eutectic temperature (230[thinsp][deg]C) during cool-down, further facilitated the excessive dissolution of Sn in the nanowires. Sn was distributed throughout the Ge nanowire lattice with no metallic Sn segregation or precipitation at the surface or within the bulk of the nanowires. The non-equilibrium incorporation of Sn into the Ge nanowires can be understood in terms of a kinetic trapping model for impurity incorporation at the triple-phase boundary during growth.

The structural conversion from α-AgVO3 to β-AgVO3: Ag nanoparticle decorated nanowires with application as cathode materials for Li-ion batteries

The majority of electrode materials in batteries and related electrochemical energy storage devices are fashioned into slurries via the addition of a conductive additive and a binder. However, aggregation of smaller diameter nanoparticles in current generation electrode compositions can result in non-homogeneous active materials. Inconsistent slurry formulation may lead to inconsistent electrical conductivity throughout the material, local variations in electrochemical response, and the overall cell performance. Here we demonstrate the hydrothermal preparation of Ag nanoparticle (NP) decorated α-AgVO3 nanowires (NWs) and their conversion to tunnel structured β-AgVO3 NWs by annealing to form a uniform blend of intercalation materials that are well connected electrically. The synthesis of nanostructures with chemically bound conductive nanoparticles is an elegant means to overcome the intrinsic issues associated with electrode slurry production, as wire-to-wire conductive pathways are formed within the overall electrode active mass of NWs. The conversion from α-AgVO3 to β-AgVO3 is explained in detail through a comprehensive structural characterization. Meticulous EELS analysis of β-AgVO3 NWs offers insight into the true β-AgVO3 structure and how the annealing process facilitates a higher surface coverage of Ag NPs directly from ionic Ag content within the α-AgVO3 NWs. Variations in vanadium oxidation state across the surface of the nanowires indicate that the β-AgVO3 NWs have a core–shell oxidation state structure, and that the vanadium oxidation state under the Ag NP confirms a chemically bound NP from reduction of diffused ionic silver from the α-AgVO3 NWs core material. Electrochemical comparison of α-AgVO3 and β-AgVO3 NWs confirms that β-AgVO3 offers improved electrochemical performance. An ex situ structural characterization of β-AgVO3 NWs after the first galvanostatic discharge and charge offers new insight into the Li+ reaction mechanism for β-AgVO3. Ag+ between the van der Waals layers of the vanadium oxide is reduced during discharge and deposited as metallic Ag, the vacant sites are then occupied by Li+.

Growth and application of planar III-V semiconductor nanowires grown with MOCVD

The semiconductor nanowire has been widely studied over the past decade and identified as a promising nanotechnology building block with application in photonics and electronics. The flexible bottom-up approach to nanowire growth allows for straightforward fabrication of complex 1D nanostructures with interesting optical, electrical, and mechanical properties. III-V nanowires in particular are useful because of their direct bandgap, high carrier mobility, and ability to form heterojunctions and have been used to make devices such as light-emitting diodes, lasers, and field-effect transistors. However, crystal defects are widely reported for III-V nanowires when grown in the common out-of-plane <111>B direction. Furthermore, commercialization of nanowires has been limited by the difficulty of assembling nanowires with predetermined position and alignment on a wafer-scale. In this thesis, planar III-V nanowires are introduced as a low-defect and integratable nanotechnology building block grown with metalorganic chemical vapor deposition. Planar GaAs nanowires grown with gold seed particles self-align along the <110> direction on the (001) GaAs substrate. Transmission electron microscopy reveals that planar GaAs nanowires are nearly free of crystal defects and grow laterally and epitaxially on the substrate surface. The nanowire morphology is shown to be primarily controlled through growth temperature and an ideal growth window of 470 +\- 10 °C is identified for planar GaAs nanowires. Extension of the planar growth mode to other materials is demonstrated through growth of planar InAs nanowires. Using a sacrificial layer, the transfer of planar GaAs nanowires onto silicon substrates with control over the alignment and position is presented. A metal-semiconductor field-effect transistor fabricated with a planar GaAs nanowire shows bulk-like low-field electron transport characteristics with high mobility. The aligned planar geometry and excellent material quality of planar III-V nanowires may lead to highly integrated III-V nanophotonics and nanoelectronics.

Application of chitosan loaded with metal oxide nano particles to remove lead present from sea water

Chitosan is a natural polymer obtained by deacetylation of chitin. After cellulose chitin is the second most abundant polysaccharide in nature. It is biologically safe, non-toxic, biocompatible and biodegradable polysaccharide. Chitosan loaded with zinc oxide nanoparticles have gained more attention bio sorbent because of their better stability, low toxicity, simple and mild preparation method and high sorption capacity. Chitosan loaded with zinc oxide nanoparticles have been prepared of chitosan. The physicochemical properties of nanoparticles were characterized by Fourier Transform Infrared (FTIR), Scanning Electron Microscope (SEM) Analysis. Its sorption capacity for lead and cadmium ions studied. Factors such as initial concentration of lead ions, cadmium ions sorbent amount, contact time, pH and temperature were investigated. It is found that chitosan loaded with zinc oxide nanoparticles could sorb lead and cadmium ions effectively, this sorption rate was affected significantly by initial concentration of lead and cadmium ions, sorbent amount, contact time, pH of solution. The maximum of percentage of lead sorption was 98 % with initial concentration 3 mg/l and sorbent amount 0.05 g, pH 11 in 45 min and cadmiumwas90 %with initial concentration 3mg/l and sorbent amount 0.05 g, pH 11 in45 min. Consequently chitosan loaded with zinc oxide nanoparticles demonstrated greater fixation ability for lead ions than cadmium ions.

Fabrication and optimizing of metal nano silicate as toxic metal absorbent from sea water

Pure Water, is a crucial demand of creature life. Following industrial development, extra amount of toxic metals such as chromium enters the environmental cycle through the sewage, which is considered as a serious threat for organisms. One of the modern methods of filtration and removal of contaminants in water, is applying Nano-technology. According to specific property of silicate materials, in this article we try to survey increased power in composites and various absorption in several morphologies and also synthesis of Nano-metal silicates with different morphologies as absorbent of metal toxic ions. At first, we synthesize nano zink silicate with three morphologies considering context and the purpose of this survey. 1) Nano synthesis of zink silicate hollow cavity by hydrothermal method in mixed solvent system of ethanol/glycol polyethylene. 2) Zink nano wires silicate in a water-based system by controlling the amount of sodium silicate. 3) Synthesis of nano zink silicate membrane. After synthesizing, we measured the cadmium ion absorbance by synthesized nano zink silicates. Controlling PH, is the applied absorption method. Next step, we synthesized nano zink-magnesium silicate composite in two various morphologies of nanowires and membrane by different precent of zink and magnesium, in order to optimize synthesized nano metal silicate. We used zink nitrate and magnesium nitrate and also measured cadmium absorption by synthesized nano metal silicates in the same way of PH control absorption. In the 3rd step, in order to determine the impact of the type of metal in nano metal silicate, we synthesized nano magnesium silicate and compared its absorption with nano zink silicate. Furthermore, we calculated the optimal concentration in one of synthesizes. Optimal concentration is the process which has the maximum absorption. While applying two methods of absorption in the test, finally we compared the effect of absorption method on the absorption level. Below you find further steps of synthesis: 1) Using IR, RAMAN, XRD spectroscopy to check the accuracy of synthesis. 2) Checking the dispersion of nano particles in ethanol solution by light microscope. 3) Measuring and observing particles with scanning electron microscope (SEM). 4) Using atomic absorption device for measuring the cadmium concentration in water-based solutions. The nano metal silicates were synthesized successfully. All of synthesized nano absorbents have the cadmium ion absorbency. The cadmium absorption via nano absorbents depend on various factors such as kind of metal in nano silicate and percent of metal in nano metal silicate composite. Meanwhile the absorption and PH control of medium containing the absorbent and solution would affect the cadmium absorption.

In situ differentiation of labile/inert metal species in Brazilian tropical rivers by means of a time-controlled batch-procedure based on TEPHA resin

The present study deals with a new analytical procedure based on a cellulose diffusion membrane and immobilised tetraethylene-pentamine-hexaacetate chelator (DM-TEPHA) for an in situ differentiation of labile and inert metal species in aquatic systems. The DM-TEPHA system was prepared by placing TEPHA chelator in pre-purified cellulose bags and in situ applied immersing the system in two Brazilian rivers to study the relative lability of metal species (Cu, Pb, Fe, Mn and Ni) as a function of the time and the quantity of exchanger, respectively. The procedure is simple and enables a new perspective for understanding the complexation, transport, stability and lability of metal species in aquatic systems rich in organic matter.

Modifying the band gap and optical properties of Germanium nanowires by surface termination

Semiconductor nanowires, based on silicon (Si) or germanium (Ge) are leading candidates for many ICT applications, including next generation transistors, optoelectronics, gas and biosensing and photovoltaics. Key to these applications is the possibility to tune the band gap by changing the diameter of the nanowire. Ge nanowires of different diameter have been studied with H termination, but, using ideas from chemistry, changing the surface terminating group can be used to modulate the band gap. In this paper we apply the generalised gradient approximation of density functional theory (GGA-DFT) and hybrid DFT to study the effect of diameter and surface termination using –H, –NH2 and –OH groups on the band gap of (001), (110) and (111) oriented germanium nanowires. We show that the surface terminating group allows both the magnitude and the nature of the band gap to be changed. We further show that the absorption edge shifts to longer wavelength with the –NH2 and –OH terminations compared to the –H termination and we trace the origin of this effect to valence band modifications upon modifying the nanowire with –NH2 or –OH. These results show that it is possible to tune the band gap of small diameter Ge nanowires over a range of ca. 1.1 eV by simple surface chemistry.