Transient analysis in Al-doped barium strontium titanate thin films grown by pulsed laser deposition

Thin films of (Ba0.5Sr0.5)TiO3 (BST) with different concentrations of Al doping were grown using a pulsed laser deposition technique. dc leakage properties were studied as a function of Al doping level and compared to that of undoped BST films. With an initial Al doping level of 0.1 at. % which substitutes Ti in the lattice site, the films showed a decrease in the leakage current, however, for 1 at. % Al doping level the leakage current was found to be relatively higher. Current time measurements at elevated temperatures on 1 at. % Al doped BST films revealed space-charge transient type characteristics. A complete analysis of the transient characteristics was carried out to identify the charge transport process through variation of applied electric field and ambient temperature. The result revealed a very low mobility process comparable to ionic motion, and was found responsible for the observed feature. Calculation from ionic diffusivity and charge transport revealed a conduction process associated with an activation energy of around 1 eV. The low mobility charge carriers were identified as oxygen vacancies in motion under the application of electric field. Thus a comprehensive understanding of the charge transport process in highly acceptor doped BST was developed and it was conclusive that the excess of oxygen vacancies created by intentional Al doping give rise to space-charge transient type characteristics. © 2001 American Institute of Physics.

Role of rigidity and temperature in the kinetics of photodarkening in Ge(x)As((45-x))Se(55) thin films

We present insightful results on the kinetics of photodarkening (PD) in Ge(x)As(45-x)Se(55) glasses at the ambient and liquid helium temperatures when the network rigidity is increased by varying x from 0 to 16. We observe a many fold change in PD and its kinetics with decreasing network flexibility and temperature. Moreover, temporal evolution of PD shows a dramatic change with increasing x. (C)2011 Optical Society of America

Microwave ECR Plasma Assisted MOCVD of Y(2)O(3) Thin Films Using Y(tod)(3) Precursor and Their Characterization

Yttrium oxide (Y(2)O(3)) thin films were deposited by microwave electron cyclotron resonance (ECR) plasma assisted metal organic chemical vapour deposition (MOCVD) process using indigenously developed metal organic precursors Yttrium 2,7,7-trimethyl-3,5-octanedionates, commonly known as Y(tod)(3) which were synthesized by an ultrasound method. A series of thin films were deposited by varying the oxygen flow rate from 1-9 sccm, keeping all other parameters constant. The deposited coatings were characterized by X-ray photoelectron spectroscopy, glancing angle X-ray diffraction and infrared spectroscopy. Thickness and roughness for the films were measured by stylus profilometry. Optical properties of the coatings were studied by the spectroscopic ellipsometry. Hardness and elastic modulus of the films were measured by nanoindentation technique. Being that microwave ECR CVD process is operating-pressure-sensitive, optimum oxygen activity is very essential for a fixed flow rate of precursor, in order to get a single phase cubic yttrium oxide in the films. To the best of our knowledge, this is the first effort that describes the use of Y(tod)(3) precursor for deposition of Y(2)O(3) films using plasma assisted CVD process.

Modeling the Field Emission Current Fluctuation in Carbon Nanotube Thin Films

Owing to their distinct properties, carbon nanotubes (CNTs) have emerged as promising candidate for field emission devices. It has been found experimentally that the results related to the field emission performance show variability. The design of an efficient field emitting device requires the analysis of the variabilities with a systematic and multiphysics based modeling approach. In this paper, we develop a model of randomly oriented CNTs in a thin film by coupling the field emission phenomena, the electron-phonon transport and the mechanics of single isolated CNT. A computational scheme is developed by which the states of CNTs are updated in time incremental manner. The device current is calculated by using Fowler-Nordheim equation for field emission to study the performance at the device scale.

Effect of oxygen pressure on the grain and domain structure of polycrystalline 0.85PbMg(1/3)Nb(2/3)O(3)-0.15PbTiO(3) thin films studied by scanning probe microscopy

0.85PbMg(1/3)Nb(2/3)O(3)-0.15PbTiO(3) ferroelectric-relaxor thin films have been deposited on La(0.5)nSr(0.5)CoO(3)/(1 1 1) Pt/TiO(2)/SiO(2)/Si by pulsed laser ablation at various oxygen partial pressures in the range 0.05 to 0.4 Torr. All the films have a rhombohedral perovskite structure. The grain morphology and orientation are drastically affected by the oxygen pressure, studied by x-ray diffraction and scanning electron microscopy. The domain structure investigations by dynamic contact electrostatic force microscopy have revealed that the distribution of polar nanoregions and their dynamics is influenced by the grain morphology, orientation and more importantly, oxygen vacancies. The correlation length extracted from autocorrelation function images has shown that the polarization disorder decreases with oxygen pressure up to 0.3 Torr. The presence of polarized domains and their electric field induced switching is discussed in terms of internal bias field and domain wall pinning. Film deposited at 0.4 Torr presents a curious case with unique triangular grain morphology and large polarization disorder.