Confidence Bands for Isotonic Median Curves using Sign-Tests

Suppose that one observes independent random variables (X1, Y1), (X2, Y2), …, (Xn, Yn) in R2 with unknown distributions, except that Median(Yi | Xi = M(x) for some unknown isotonic function M. We describe an explicit algorithm for the computation of confidence bands for the median function M whose running time is of order O(n2). The bands rely on multiscale sign tests and are shown to have desirable asymptotic properties.

Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots

Diluted nitride self-assembled In(Ga)AsN quantum dots (QDs) grown on GaAs substrates are potential candidates to emit in the windows of maximum transmittance for optical fibres (1.3-1.55 μm). In this paper, we analyse the effect of nitrogen addition on the indium desorption occurring during the capping process of InxGa1−xAs QDs (x = l and 0.7). The samples have been grown by molecular beam epitaxy and studied through transmission electron microscopy (TEM) and photoluminescence techniques. The composition distribution inside the dots was determined by statistical moiré analysis and measured by energy dispersive X-ray spectroscopy. First, the addition of nitrogen in In(Ga)As QDs gave rise to a strong redshift in the emission peak, together with a large loss of intensity and monochromaticity. Moreover, these samples showed changes in the QDs morphology as well as an increase in the density of defects. The statistical compositional analysis displayed a normal distribution in InAs QDs with an average In content of 0.7. Nevertheless, the addition of Ga and/or N leads to a bimodal distribution of the Indium content with two separated QD populations. We suggest that the nitrogen incorporation enhances the indium fixation inside the QDs where the indium/gallium ratio plays an important role in this process. The strong redshift observed in the PL should be explained not only by the N incorporation but also by the higher In content inside the QDs

Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN

Arsenic alloying is observed for epitaxial layers nominally intended to be In0.75Ga0.25N. Voids form beneath their interfaces with GaAs substrates, acting as sources of Ga + As out-diffusion into the growing epilayers. As a result, heteroepitaxial single-phase quaternary InxGa1-xAsyN1-y, films are formed with x similar to 0.55 and 0.05 menor que y menor que 0,10. While an undoped epilayer retains the wurtzite structure, a Mn-doped sample showed randomly spaced dopant segregations, which, together with a slightly higher As concentration, led to a transformation from the hexagonal to the twinned cubic phase.

Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content

The luminescence properties of InxAl1−xN/GaN heterostructures are investigated systematically as a function of the In content (x = 0.067 − 0.208). The recombination between electrons confined in the two-dimensional electron gas and free holes in the GaN template is identified and analyzed. We find a systematic shift of the recombination with increasing In content from about 80 meV to only few meV below the GaN exciton emission. These results are compared with model calculations and can be attributed to the changing band profile and originating from the polarization gradient between InAlN and GaN.

Generation of representation models for complex systems using Lagrangian functions

In this article, a new methodology is presented to obtain representation models for a priori relation z = u(x1, x2, . . . ,xn) (1), with a known an experimental dataset zi; x1i ; x2i ; x3i ; . . . ; xni i=1;2;...;p· In this methodology, a potential energy is initially defined over each possible model for the relationship (1), what allows the application of the Lagrangian mechanics to the derived system. The solution of the Euler–Lagrange in this system allows obtaining the optimal solution according to the minimal action principle. The defined Lagrangian, corresponds to a continuous medium, where a n-dimensional finite elements model has been applied, so it is possible to get a solution for the problem solving a compatible and determined linear symmetric equation system. The computational implementation of the methodology has resulted in an improvement in the process of get representation models obtained and published previously by the authors.

Geometric Stable Laws Through Series Representations

Let (Xi ) be a sequence of i.i.d. random variables, and let N be a geometric random variable independent of (Xi ). Geometric stable distributions are weak limits of (normalized) geometric compounds, SN = X1 + · · · + XN , when the mean of N converges to infinity. By an appropriate representation of the individual summands in SN we obtain series representation of the limiting geometric stable distribution. In addition, we study the asymptotic behavior of the partial sum process SN (t) = ⅀( i=1 ... [N t] ) Xi , and derive series representations of the limiting geometric stable process and the corresponding stochastic integral. We also obtain strong invariance principles for stable and geometric stable laws.

Well-Behavior, Well-Posedness and Nonsmooth Analysis

AMS subject classification: 90C30, 90C33.

Densities with Spherical Level Sets in the Gauss-exponential Domain

2000 Mathematics Subject Classification: 60F05, 60B10.

Cayley-Hamilton Theorem for Matrices over an Arbitrary Ring

2000 Mathematics Subject Classification: 15A15, 15A24, 15A33, 16S50.

Some Coefficient Estimates for Polynomials on the Unit Interval

2000 Mathematics Subject Classification: 26C05, 26C10, 30A12, 30D15, 42A05, 42C05.

Exact Solutions of Nonlocal BVPs for the Multidimensional Heat Equations

MSC 2010: 44A35, 44A45, 44A40, 35K20, 35K05

Oscillation Criteria of Second-Order Quasi-Linear Neutral Delay Difference Equations

2000 Mathematics Subject Classification: 39A10.

Special compositions in affinely connected spaces without a torsion

2000 Mathematics Subject Classification: 53B05, 53B99.