Characteristics of the interfacial capacitance in thin film Ba0.5Sr0.5TiO3 capacitors with SrRuO3 and (La, Sr)CoO3 bottom electrodes

Thin film Ba0.5Sr0.5TiO3 (BST) capacitors of thickness similar to75 nm to similar to1200 nm, with Au top electrodes and SrRuO 3 (SRO) or (La, Sr)CoO3 (LSCO) bottom electrodes were fabricated using Pulsed Laser Deposition. Implementing the "series capacitor model," bulk and interfacial capacitance properties were extracted as a function of temperature and frequency. 'Bulk' properties demonstrated typical ceramic behaviour, displaying little frequency dependence and a permittivity and loss peak at 250 K and 150 K respectively. The interfacial component was found to be relatively temperature and frequency independent for the LSCO/BST capacitors, but for the SRO/BST configuration the interfacial capacitance demonstrated moderate frequency and little temperature dependence below T similar to 300 K but a relatively strong frequency and temperature dependence above T similar to3 00 K. This was attributed to the thermal activation of a space charge component combined with a thermally independent background. The activation energy for the space charge was found to be E-A similar to 0.6 eV suggesting de-trapping of electrons from shallow level traps associated with a thin interfacial layer of oxygen vacancies, parallel to the electrodes.

Understanding thickness effects in thin film capacitors

Pulsed Laser Deposition (PLD) was used to make Au/(Ba0.5Sr0.5)TiO3/(La0.5Sr0.5) CoO3/MgO thin film capacitor structures. Functional properties were studied with changing BST thickness from similar to1265 nm to similar to63 nm. The dielectric constant was found to decrease, and migration of T-m (the temperature at which the dielectric constant is maximum) to lower temperatures occurred as thickness was reduced. Curie-Weiss plots of the as-obtained dielectric data, indicated that the Curie temperature was also systemmatically progressively depressed. Further, fitting to expressions previously used to describe diffuse phase transitions suggested increased diffuseness in transformation behaviour as film thickness decreased. This paper discusses the care needed in interpreting the observations given above. We make particular distinction between the apparent Curie-temperature derived from Curie-Weiss plots of as-measured data, and the inherent Curie temperature determined after correction for the interfacial capacitance. We demonstrate that while the apparent Curie temperature decreases as thickness decreases, the inherent Curie temperature is thickness independent. Thickness-invariant phase transition behaviour is confirmed from analysis of polarisation loops, and from examination of the temperature dependence of the loss-tangent. We particularly note that correction of data for interfacial capacitance does not alter the position of T-m. We must therefore conclude that the position of T-m is not related simply to phase transformation behaviour in BST thin films.

The Influence of Point Defects and Inhomogeneous Strain on the Functional Behaviour of Thin film Ferroelectrics

An attempt has been made to unequivocally identify the influence that inhomogeneous strain fields, surrounding point defects, have on the functional properties of thin film ferroelectrics. Single crystal thin film lamellae of BaTiO3 have been integrated into capacitor structures, and the functional differences between those annealed in oxygen and those annealed in nitrogen have been mapped. Key features, such as the change in the paraelectric-ferroelectric phase transition from first to second order were noted and found to be consistent with mean field modeling predictions for the effects of inhomogeneous strain. Switching characteristics appeared to be unaffected, suggesting that point defects have a low efficacy in domain wall pinning.

Ferroelectrics at the Nanoscale

There are several factors which make the investigation and understanding of nanoscale ferroelectrics particularly timely and important. Firstly, there is a market pressure, primarily from the electronics industry, to integrate ferroelectrics into devices with progressive decreases in size and increases in morphological complexity. This is perhaps best illustrated through the roadmaps for product development in FeRAM (Ferroelectric Randorn Access Memory) where the need for increases in bit density will require a move from 2D planar capacitor structures to 3D trenched capacitors in the next few years. Secondly, there is opportunity for novel exploration, as it is only relatively recently that developments in thin film growth of complex oxides, self-assembly techniques and high-resolution 'top-down' patterning have converged to allow the fabrication of isolated and well-defined ferroelectric nanoshapes, the properties of which are not known. Thirdly, there is an expectation that the behaviour of small scale ferroelectrics will be different from bulk, as this group of functional materials is highly sensitive to boundary/surface conditions, which are expected to dominate the overall response when sizes are reduced into the nanoscale regime. This feature article attempts to introduce some of the current areas of discovery and debate surrounding studies on ferroelectrics at the nanoscale. The focus is directed primarily at the search for novel size-related properties and behaviour which are not necessarily observed in bulk.

Electrical characterization of ALD Al2O3 and HfO2 films on germanium

Al2O3 and HfO2 films were deposited on germanium substrates by atomic layer deposition (ALD) and analyzed by MOS capacitor electrical characterization. In-situ plasma nitridation performed prior to ALD was found to improve the stability of the interface. For Al 2O3/GeON/Ge capacitors, a 450°C anneal in nitrogen ambient reduced hysteresis and oxide fixed charge to 90 mV and 1012 cm-2 respectively, with low leakage current density. On the contrary, degradation was observed for un-nitrided Al2O3/Ge capacitors after 300 and 400°C post-metal anneals. HfO2/GeON/Ge capacitors benefitted from a 400°C densification anneal but exhibited degradation after post-metal anneals at temperatures greater than 300°C. This degradation is attributed to the influence of Al electrodes on the HfO 2 gate stack. HfO2 is considered to be a suitable material for the gate stack and Al2O3 for the buried dielectric in a GeOI structure. ©The Electrochemical Society.

The effects of temperature on the performance of electrochemical double layer capacitors

An electrochemical double layer capacitor test cell containing activated carbon xerogel electrodes and ionic liquid electrolyte was tested at 15, 25 and 40 OC to examine the effect of temperature on electrolyte resistance (RS) and equivalent series resistance (ESR) measured using impedance spectroscopy and capacitance using charge/discharge cycling. A commercial 10F capacitor was used as a comparison. Viscosity, ionic self-diffusion coefficients and differential scanning calorimetry measurements were used to provide an insight into the behaviour of the 1,2-dimethyl-3-propylimdazolium electrolyte. Both RS and ESR decreased with increasing temperature for both capacitors. Increasing the temperature also increased the capacitance for both the test cell and the commercial capacitor but proportionally more for the test cell. An increase in temperature decreased the ionic liquid electrolyte viscosity and increased the self diffusion coefficients of both the anion and the cation indicating an increase in dissociation and increase in ionic mobility.

Energy storage in electrochemical capacitors: designing functional materials to improve device performance

Electrochemical capacitors, also known as supercapacitors, are becoming increasingly important components in energy storage, although their widespread use has not been attained due to a high cost/ performance ratio. Fundamental research is contributing to lowered costs through the engineering of new materials. Currently the most viable materials used in electrochemical capacitors are biomassderived and polymer-derived activated carbons, although other carbon materials are useful research tools. Metal oxides could result in a step change for electrochemical capacitor technology and is an exciting area of research. The selection of an appropriate electrolyte and electrode structure is fundamental in determining device performance. Although there are still many uncertainties in understanding the underlying mechanisms involved in electrochemical capacitors, genuine progress continues to be made. It is argued that a large, collaborative international research programme is necessary to fully develop the potential of electrochemical capacitors.

First-Order Reversal Curve Probing of Spatially Resolved Polarization Switching Dynamics in Ferroelectric Nanocapacitors

Spatially resolved polarization switching In ferroelectric nanocapacitors was studied on the sub-25 nm scale using the first-order reversal curve (FORC) method. The chosen capacitor geometry allows both high-veracity observation of the domain structure and mapping of polarization switching in a uniform field, synergistically combining microstructural observations and probing of uniform-field polarization responses as relevant to device operation. A classical Kolmogorov-Avrami-Ishibashi model has been adapted to the voltage domain, and the individual switching dynamics of the FORC response curves are well approximated by the adapted model. The comparison with microstructures suggests a strong spatial variability of the switching dynamics inside the nanocapacitors.

Loading Artificial Magnetic Conductor and Artificial Magnetic Conductor Absorber with Negative Impedance Convertor Elements

The general properties of a frequency selective surface loaded with negative impedance converter (NIC)-based active loads are discussed from a theoretical perspective.The stability problem associated with NIC circuits embedded in artificial magnetic conductor (AMC) and AMC absorber applications is studied using pole-zero analysis. The requirements and constraints for achieving stable operation with enhanced bandwidth using negative capacitance as realized by a floating NIC network are derived. Furthermore, it is shown that it is nearly impossible to simultaneously implement a negative capacitor and a negative inductor to such structures. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2111–2114, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27019

Voltage Sensing Using an Asynchronous Charge-to-Digital Converter for Energy-Autonomous Environments

In future systems with relatively unreliable and unpredictable energy sources such as harvesters, the system power supply may become non-deterministic. For energy effective operations, Vdd is an important parameter in any meaningful system control mechanism. Reliable and accurate on-chip voltage sensors are therefore indispensible for the power and computation management of such systems. Existing voltage sensing methods are not suitable because they usually require a stable and known reference (voltage, current, time, frequency, etc.), which is difficult to obtain in this environment. This paper describes an autonomous reference-free voltage sensor designed using an asynchronous counter powered by the charge on a capacitor and a small controller. Unlike existing methods, the voltage information is directly generated as a digital code. The sensor, fabricated in the 180 nm technology node, was tested successfully through performing measurements over the voltage range from 1.8 V down to 0.8 V.

A Lead-Free and High-Energy Density Ceramic for Energy Storage Applications

In this work, we demonstrate a very high-energy density and high-temperature stability capacitor based on SrTiO3-substituted BiFeO3 thin films. An energy density of 18.6 J/cm3 at 972 kV/cm is reported. The temperature coefficient of capacitance (TCC) was below 11% from room temperature up to 200°C. These results are of practical importance, because it puts forward a promising novel and environmentally friendly, lead-free material, for high-temperature applications in power electronics up to 200°C. Applications include capacitors for low carbon vehicles, renewable energy technologies, integrated circuits, and for the high-temperature aerospace sector. © 2013 Crown copyright

Switching ferroelectric domain configurations using both electric and magnetic fields in Pb(Zr,Ti)O3–Pb(Fe,Ta)O3 single-crystal lamellae

Thin single-crystal lamellae cut from Pb(Zr,Ti)O3–Pb(Fe,Ta)O3 ceramic samples have been integrated into simple coplanar capacitor devices. The influence of applied electric and magnetic fields on ferroelectric domain configurations has been mapped, using piezoresponse force microscopy. The extent to which magnetic fields alter the ferroelectric domains was found to be strongly history dependent: after switching had been induced by applying electric fields, the susceptibility of the domains to change under a magnetic field (the effective magnetoelectric coupling parameter) was large. Such large, magnetic field-induced changes resulted in a remanent domain state very similar to the remanent state induced by an electric field. Subsequent magnetic field reversal induced more modest ferroelectric switching.

Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”

Simple meso-scale capacitor structures have been made by incorporating thin (300 nm) single crystal lamellae of KTiOPO4 (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.

Synchronous records of pCO2 and Δ14C suggest rapid, ocean-derived pCO2 fluctuations at the onset of Younger Dryas

Just before the onset of the Younger Dryas (YD) cold event, several stomatal proxy-based pCO2 records have shown a sharp increase in atmospheric CO2 concentration (pCO2) of between ca 50 and 100 ppm, followed by a rapid decrease of similar or even larger magnitude. Here we compare one of these records, a high-resolution pCO2 record from southern Sweden, with the IntCal13 record of radiocarbon (Δ14C). The two records show broadly synchronous fluctuations at the YD onset. Specifically, the IntCal13 record documents decreasing Δ14C just before the YD onset when pCO2 peaks, consistent with a source of “old” CO2 from the deep ocean. We propose that this fluctuation occurred due to a major ocean flushing event. The cause of the flushing event remains speculative but could be related to the hypothesis of the glacial ocean as a thermobaric capacitor. We confirm that the earth system can produce such large multi-decadal timescale fluctuations in pCO2 through simulating an artificial ocean flushing event with the GENIE Earth System Model. We suggest that sharp transitions of pCO2 may have remained undetected so far in ice cores due to inter-firn gas exchange and time-averaging. The stomatal proxy record is a powerful complement to the ice core records for the study of rapid climate change.

Pre-charging and DC Fault Ride-Through of Hybri MMC Based HVDC Systems

Compared to half-bridge based MMCs, full-bridge based systems have the advantage of blocking dc fault, but at the expense of increased power semiconductors and power losses. In view of the relationships among ac/dc voltages and currents in full-bridge based MMC with the negative voltage state, this paper provides a detailed analysis on the link between capacitor voltage variation and the maximum modulation index. A hybrid MMC, consisting of mixed half-bridge and full-bridge circuits to combine their respective advantages is investigated in terms of its pre-charging process and transient dc fault ride-through capability. Simulation and experiment results demonstrate the feasibility and validity of the proposed strategy for a full-bridge based MMC and the hybrid MMC.