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Kirjallisuusarvostelu

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Kirjallisuusarvostelu

Side peaks in Nb and NbTi point-contact spectra

Superconductor – normal metal point contacts were investigated, using different combinations of Cu, brass, Nb and NbTi. The resulting spectra contained side peaks. The currents at which these side peaks appeared, depended on the radii of the contacts. For contacts with Nb this dependence was quadratic, while for contacts with NbTi it was linear. Based on this, we argue that the side peaks in the case of the Nb contacts are due to the critical current density being exceeded. In contrast, side peaks of the NbTi contacts are caused by the self-magnetic field exceeding the lower critical field of NbTi. The NbTi contacts did not show the expected contribution from the vanishing Maxwell resistance of the superconductor, a question which remained open.

Cyber warfare

A postgraduate seminar series with a title Cyber Warfare held at the Department of Military Technology of the National Defence University in the fall of 2012. This book is a collection of some of talks that were presented in the seminar. The papers address computer network defence in military cognitive networks, computer network exploitation, non-state actors in cyberspace operations, offensive cyber-capabilities against critical infrastructure and adapting the current national defence doctrine to cyber domain. This set of papers tries to give some insight to current issues of the cyber warfare. The seminar has always made a publication of the papers but this has been an internal publication of the Finnish Defence Forces and has not hindered publication of the papers in international conferences. Publication of these papers in peer reviewed conferences has indeed been always the goal of the seminar, since it teaches writing conference level papers. We still hope that an internal publication in the department series is useful to the Finnish Defence Forces by offering an easy access to these papers.

Research and development of III-V semiconductor surfaces for improved device interfaces

This thesis is devoted to understanding and improving technologically important III-V compound semiconductor (e.g. GaAs, InAs, and InSb) surfaces and interfaces for devices. The surfaces and interfaces of crystalline III-V materials have a crucial role in the operation of field-effect-transistors (FET) and highefficiency solar-cells, for instance. However, the surfaces are also the most defective part of the semiconductor material and it is essential to decrease the amount of harmful surface or interface defects for the next-generation III-V semiconductor device applications. Any improvement in the crystal ordering at the semiconductor surface reduces the amount of defects and increases the material homogeneity. This is becoming more and more important when the semiconductor device structures decrease to atomic-scale dimensions. Toward that target, the effects of different adsorbates (i.e., Sn, In, and O) on the III-V surface structures and properties have been investigated in this work. Furthermore, novel thin-films have been synthesized, which show beneficial properties regarding the passivation of the reactive III-V surfaces. The work comprises ultra-high-vacuum (UHV) environment for the controlled fabrication of atomically ordered III-V(100) surfaces. The surface sensitive experimental methods [low energy electron diffraction (LEED), scanning tunneling microscopy/spectroscopy (STM/STS), and synchrotron radiation photoelectron spectroscopy (SRPES)] and computational density-functionaltheory (DFT) calculations are utilized for elucidating the atomic and electronic properties of the crucial III-V surfaces. The basic research results are also transferred to actual device tests by fabricating metal-oxide-semiconductor capacitors and utilizing the interface sensitive measurement techniques [capacitance voltage (CV) profiling, and photoluminescence (PL) spectroscopy] for the characterization. This part of the thesis includes the instrumentation of home-made UHV-compatible atomic-layer-deposition (ALD) reactor for growing good quality insulator layers. The results of this thesis elucidate the atomic structures of technologically promising Sn- and In-stabilized III-V compound semiconductor surfaces. It is shown that the Sn adsorbate induces an atomic structure with (1×2)/(1×4) surface symmetry which is characterized by Sn-group III dimers. Furthermore, the stability of peculiar ζa structure is demonstrated for the GaAs(100)-In surface. The beneficial effects of these surface structures regarding the crucial III-V oxide interface are demonstrated. Namely, it is found that it is possible to passivate the III-V surface by a careful atomic-scale engineering of the III-V surface prior to the gate-dielectric deposition. The thin (1×2)/(1×4)-Sn layer is found to catalyze the removal of harmful amorphous III-V oxides. Also, novel crystalline III-V-oxide structures are synthesized and it is shown that these structures improve the device characteristics. The finding of crystalline oxide structures is exploited by solving the atomic structure of InSb(100)(1×2) and elucidating the electronic structure of oxidized InSb(100) for the first time.

Viherlannoitusopas

Tässä oppaassa käsitellään mahdollisuuksia käyttää viherlannoitusnurmea maan kasvukunnon parantamiseen. Viherlannoitusnurmi on hyvä vaihtoehto saada nurmea viljelykiertoon myös tiloilla, jotka eivät muuten viljele nurmea. Nurmen perustamiseen, hoitoon ja lopettamiseen liittyviä asioita havainnollistetaan esimerkeillä. Lisäksi käydään läpi talouslaskelmia, jotka kertovat viherlannoitusnurmen tuotto- ja kustannuseroista verrattuna saman kasvilajin jatkuvaan viljelyyn eli monokulttuuriin. Tämä opas on osa TEHO Plus -hankkeen tuottamaa materiaalia viljelijöiden ja neuvojien käyttöön, mikä täydentää hankkeen laatimaa Maatilan ympäristökäsikirjaa.

Igor Stravinsky : Hulttion tie

Ooppera, yhteensä kuusi esitystä