Ternary lanthanide (Er3+, Nd3+, Yb3+, Sm3+, Pr3+) complex-functionalized mesoporous SBA-15 materials that emit in the near-infrared range

The tertiary lanthanide complexes [Ln(hfth)(3)phen] (Ln=Er, Nd, Yb, Sm) and [Pr(tfnb)(3)phen] have been Successfully covalently attached in the ordered SBA-15 mesoporous materials via a functionalized 1,10-phenanthroline group 5-(N,N-bis-3-(triethoxysilyl)propyl)ureyl-1,10-phenanthroline (Phen-Si). The derivative materials [denoted as Ln(hfth)(3)phen-S15 and Pr(tfnb)(3)phen-S15; Ln=Er, Yb, Nd, Sm; hfth=4,4,5,5,6,6,6-heptafluoro-1-(2-thienyl)hexane-1,3-dionate; tfnb=4,4,4-trifluoro-1-(2-naphthyl)-1,3-butanedionate] were characterized by powder X-ray diffraction (XRD), transmission electron microscopy (TEM), and N-2 adsorption/desorption.

Near-infrared luminescent properties and natural lifetime calculation of a novel Er3+ complex

in this communication, a novel Er3+ complex Er(PT)(3)TPPO [PT = 1-phenyl-3-methyl-4-tert-butylbenzoyl-5-pyrazolone, TPPO = triphenyl phosphine oxide] is successfully synthesized and characterized by elemental analysis and single-crystal X-ray diffraction. Its optical properties and the energy transfer process from the ligand PT to the Er3+ ion are investigated, the typical near-infrared (NIR) luminescence (centered at around 1530 nm) is attributed to the I-4(13/2) -> I-4(15/2) transition of Er3+ ion which results from the efficient energy transfer from PT to Er3+ ion (an antenna effect). The wider full width at half maximum (78 nm) peaked at 1530 nm in the emission spectrum and the Judd-Ofelt theory calculation on the radiative properties suggest that Er(PT)(3)TPPO should be a promising candidate for tunable lasers and planar optical amplifiers.

Near-infrared luminescent xerogel materials covalently bonded with ternary lanthanide [Er(III), Nd(III), Yb(III), Sm(III)] complexes

A beta-diketone ligand 4,4,5,5,5-pentafluoro-1-(2-naphthyl)-1,3-butanedione (Hpfnp), which contains a pentafluoroalkyl chain, was synthesized as the main sensitizer for synthesizing new near-infrared (NIR) luminescent Ln(pfnp)(3)phen (phen = 1,10-phenanthroline) (Ln = Er, Nd, Yb, Sm) complexes. At the same time, a series of lanthanide complexes covalently bonded to xerogels by the ligand 5-(N,N-bis-3-(triethoxysilyl)propyl)ureyl-1,10-phenanthroline (phen-Si) were synthesized in situ via a sol-gel process. [The obtained materials are denoted as xerogel-bonded Ln complexes (Ln = Er, Nd, Yb, Sm).] The single crystal structures of the Ln(pfnp) 3phen complexes were determined.

一种低功耗微弱信号放大电路的优化设计与研究

针对远距离声源发射的水声信号微弱、水声接收设备电源能量有限的特点,提出一种功耗小、对无源元件误差灵敏度低、高增益放大的微弱水声信号通用放大电路。系统采用场效应管共源单调谐放大器为前置放大级,由四级级联低功耗运放构成带通滤波放大电路,省去传统的R、C低通网络,实现了对微弱水声信号的高增益放大和海洋背景噪声的归一化处理。通过计算电路网络传递函数极点证明了电路系统的稳定性。海上使用表明系统具有精度高、适应性强、电路稳定性好、功耗小等优点。

回转器及其应用

叙述了在自动控制、仪器仪表、信号变换以及传感器信号采集与处理等电路中实现大时间常数的一种新方法。根据近代电工理论中的回转器原理 ,利用运算放大器及电阻、电容器件可以实现模拟电容和模拟电感。给出了理论计算与应用实例

Parallel Networks for Machine Vision

The amount of computation required to solve many early vision problems is prodigious, and so it has long been thought that systems that operate in a reasonable amount of time will only become feasible when parallel systems become available. Such systems now exist in digital form, but most are large and expensive. These machines constitute an invaluable test-bed for the development of new algorithms, but they can probably not be scaled down rapidly in both physical size and cost, despite continued advances in semiconductor technology and machine architecture. Simple analog networks can perform interesting computations, as has been known for a long time. We have reached the point where it is feasible to experiment with implementation of these ideas in VLSI form, particularly if we focus on networks composed of locally interconnected passive elements, linear amplifiers, and simple nonlinear components. While there have been excursions into the development of ideas in this area since the very beginnings of work on machine vision, much work remains to be done. Progress will depend on careful attention to matching of the capabilities of simple networks to the needs of early vision. Note that this is not at all intended to be anything like a review of the field, but merely a collection of some ideas that seem to be interesting.

Evaluation of TFTP DDoS Amplification Attack.

Web threats are becoming a major issue for both governments and companies. Generally, web threats increased as much as 600% during last year (WebSense, 2013). This appears to be a significant issue, since many major businesses seem to provide these services. Denial of Service (DoS) attacks are one of the most significant web threats and generally their aim is to waste the resources of the target machine (Mirkovic & Reiher, 2004). Dis-tributed Denial of Service (DDoS) attacks are typically executed from many sources and can result in large traf-fic flows. During last year 11% of DDoS attacks were over 60 Gbps (Prolexic, 2013a). The DDoS attacks are usually performed from the large botnets, which are networks of remotely controlled computers. There is an increasing effort by governments and companies to shut down the botnets (Dittrich, 2012), which has lead the attackers to look for alternative DDoS attack methods. One of the techniques to which attackers are returning to is DDoS amplification attacks. Amplification attacks use intermediate devices called amplifiers in order to amplify the attacker's traffic. This work outlines an evaluation tool and evaluates an amplification attack based on the Trivial File Transfer Proto-col (TFTP). This attack could have amplification factor of approximately 60, which rates highly alongside other researched amplification attacks. This could be a substantial issue globally, due to the fact this protocol is used in approximately 599,600 publicly open TFTP servers. Mitigation methods to this threat have also been consid-ered and a variety of countermeasures are proposed. Effects of this attack on both amplifier and target were analysed based on the proposed metrics. While it has been reported that the breaching of TFTP would be possible (Schultz, 2013), this paper provides a complete methodology for the setup of the attack, and its verification.

Creation of a complex butterfly attractor using a novel Lorenz-type system

A novel Lorenz-type system of nonlinear differential equations is proposed. Unlike the original Lorenz system, where the chaotic dynamics remain confined to the positive half-space with respect to the Z state variable due to a limiting threshold effect, the proposed system enables bipolar swing of this state variable. In addition, the classical set of parameters (a, b, c) controlling the behavior of the Lorenz system are reduced to a single parameter, namely a. Two possible modes of operation are admitted by the system; switching between these two modes results in the creation of a complex butterfly chaotic attractor. Numerical simulations and results from an experimental setup are presented

Novel all-optical on-off-keyed to alternate-mark-inversion converter

We numerically investigate a novel 40 Gbps OOK to AMI all-optical modulation format converter employing an SOA-based Mach-Zehnder interferometer.  We demonstrate operation with a 27-1 PRBS and explain the phase modulation's relationship with patterning.

High speed nonlinear optical components for next-generation optical communications

Electronic signal processing systems currently employed at core internet routers require huge amounts of power to operate and they may be unable to continue to satisfy consumer demand for more bandwidth without an inordinate increase in cost, size and/or energy consumption. Optical signal processing techniques may be deployed in next-generation optical networks for simple tasks such as wavelength conversion, demultiplexing and format conversion at high speed (≥100Gb.s-1) to alleviate the pressure on existing core router infrastructure. To implement optical signal processing functionalities, it is necessary to exploit the nonlinear optical properties of suitable materials such as III-V semiconductor compounds, silicon, periodically-poled lithium niobate (PPLN), highly nonlinear fibre (HNLF) or chalcogenide glasses. However, nonlinear optical (NLO) components such as semiconductor optical amplifiers (SOAs), electroabsorption modulators (EAMs) and silicon nanowires are the most promising candidates as all-optical switching elements vis-à-vis ease of integration, device footprint and energy consumption. This PhD thesis presents the amplitude and phase dynamics in a range of device configurations containing SOAs, EAMs and/or silicon nanowires to support the design of all optical switching elements for deployment in next-generation optical networks. Time-resolved pump-probe spectroscopy using pulses with a pulse width of 3ps from mode-locked laser sources was utilized to accurately measure the carrier dynamics in the device(s) under test. The research work into four main topics: (a) a long SOA, (b) the concatenated SOA-EAMSOA (CSES) configuration, (c) silicon nanowires embedded in SU8 polymer and (d) a custom epitaxy design EAM with fast carrier sweepout dynamics. The principal aim was to identify the optimum operation conditions for each of these NLO device configurations to enhance their switching capability and to assess their potential for various optical signal processing functionalities. All of the NLO device configurations investigated in this thesis are compact and suitable for monolithic and/or hybrid integration.

Properties and applications of injection locking in 1.55 μm quantum-dash mode-locked semiconductor lasers

Mode-locked semiconductor lasers are compact pulsed sources with ultra-narrow pulse widths and high repetition-rates. In order to use these sources in real applications, their performance needs to be optimised in several aspects, usually by external control. We experimentally investigate the behaviour of recently-developed quantum-dash mode-locked lasers (QDMLLs) emitting at 1.55 μm under external optical injection. Single-section and two-section lasers with different repetition frequencies and active-region structures are studied. Particularly, we are interested in a regime which the laser remains mode-locked and the individual modes are simultaneously phase-locked to the external laser. Injection-locked self-mode-locked lasers demonstrate tunable microwave generation at first or second harmonic of the free-running repetition frequency with sub-MHz RF linewidth. For two-section mode-locked lasers, using dual-mode optical injection (injection of two coherent CW lines), narrowing the RF linewidth close to that of the electrical source, narrowing the optical linewidths and reduction in the time-bandwidth product is achieved. Under optimised bias conditions of the slave laser, a repetition frequency tuning ratio >2% is achieved, a record for a monolithic semiconductor mode-locked laser. In addition, we demonstrate a novel all-optical stabilisation technique for mode-locked semiconductor lasers by combination of CW optical injection and optical feedback to simultaneously improve the time-bandwidth product and timing-jitter of the laser. This scheme does not need an RF source and no optical to electrical conversion is required and thus is ideal for photonic integration. Finally, an application of injection-locked mode-locked lasers is introduced in a multichannel phase-sensitive amplifier (PSA). We show that with dual-mode injection-locking, simultaneous phase-synchronisation of two channels to local pump sources is realised through one injection-locking stage. An experimental proof of concept is demonstrated for two 10 Gbps phase-encoded (DPSK) channels showing more than 7 dB phase-sensitive gain and less than 1 dB penalty of the receiver sensitivity.

Differential amplifier with improved gain-accuracy and linearity

A novel circuit design technique is presented which improves gain-accuracy and linearity in differential amplifiers. The technique employs negative impedance compensation and results demonstrate a significant performance improvement in precision, lowering sensitivity, and wide dynamic range. A theoretical underpinning is given together with the results of a demonstrator differential input/output amplifier with gain of 12 dB. The simulation results show that, with the novel method, both the gain-accuracy and linearity can be improved greatly. Especially, the linearity improvement in IMD can get to more than 23 dB with a required gain.

Balanced class e amplifier based multimode modulator

In this paper we present an adaptation to the classical I/Q modulator topology which simultaneously allows it to operate both as a multi-modulation standard modulator, and as a high efficiency balanced amplifier. This is made possible by concurrently exploiting the ability of the Class E amplifiers to produce variable output power at maximum power added efficiency, PAE, by simple dc bias control while faithfully reproducing phase encoded signals. Experimental evidence for the behaviour of the modulator when operated in QPSK mode at 2.33 GHz with a 1 Msymbol/s rate shows that Error Vector Magnitude of less than 5% with amplifier PAE of 65% is possible. The multimode modulator presented here should lead to significantly reduced complexity, enhanced functionality transceivers for use in dc power sensitive handheld wireless applications. © 2007 EuMA.

2.4 GHz Class-E power amplifier with transmissionline harmonic terminations

The design procedure, fabrication and measurement of a Class-E power amplifier with excellent second- and third-harmonic suppression levels are presented. A simplified design technique offering compact physical layout is proposed. With a 1.2 mm gate-width GaAs MESFET as a switching device, the amplifier is capable of delivering 19.2 dBm output power at 2.41 GHz, achieves peak PAE of 60% and drain efficiency of 69%, and exhibits 9 dB power gain when operated from a 3 V DC supply voltage. When compared to the classical Class-E two-harmonic termination amplifier, the Class-E amplifier employing three-harmonic terminations has more than 10% higher drain efficiency and 23 dB better third-harmonic suppression level. Experimental results are presented and good agreement with simulation is obtained. Further, to verify the practical implementation in communication systems, the Bluetooth-standard GFSK modulated signal is applied to both two- and three-harmonic amplifiers. The measured RMS FSK deviation error and RMS magnitude error were, for the three-harmonic case, 1.01 kHz and 0.122%, respectively, and, for the two-harmonic case, 1.09 kHz and 0.133%. © 2007 The Institution of Engineering and Technology.

Series-L/parallel-tuned comparison with shunt-C/series-tuned class-E power amplifier

An analysis of the operation of a series-L/parallel-tuned class-E amplifier and its equivalence to the classic shunt-C/series-tuned class-E amplifier are presented. The first reported closed form design equations for the series-L/parallel-tuned topology operating under ideal switching conditions are given. Furthermore, a design procedure is introduced that allows the effect that nonzero switch resistance has on amplifier performance efficiency to be accounted for. The technique developed allows optimal circuit components to be found for a given device series resistance. For a relatively high value of switching device ON series resistance of 4O, drain efficiency of around 66% for the series-L/parallel-tuned topology, and 73% for the shunt-C/series-tuned topology appear to be the theoretical limits. At lower switching device series resistance levels, the efficiency performance of each type are similar, but the series-L/parallel-tuned topology offers some advantages in terms of its potential for MMIC realisation. Theoretical analysis is confirmed by numerical simulation for a 500mW (27dBm), 10% bandwidth, 5 V series-L/parallel-tuned, then, shunt-C/series-tuned class E power amplifier, operating at 2.5 GHz, and excellent agreement between theory and simulation results is achieved. The theoretical work presented in the paper should facilitate the design of high-efficiency switched amplifiers at frequencies commensurate with the needs of modern mobile wireless applications in the microwave frequency range, where intrinsically low-output-capacitance MMIC switching devices such as pHEMTs are to be used.