The evolution of information while building cross-domain models of a design: A video experiment

Models capturing the connectivity between different domains of a design, e.g. between components and functions, can provide a tool for tracing and analysing aspects of that design. In this paper, video experiments are used to explore the role of cross-domain modelling in building up information about a design. The experiments highlight that cross-domain modelling can be a useful tool to create and structure design information. Findings suggest that consideration of multiple domains encourages discussion during modelling, helps identify design aspects that might otherwise be overlooked, and can help promote consideration of alternative design options. Copyright © 2002-2012 The Design Society. All rights reserved.

A backward-simulation based Rao-Blackwellized particle smoother for conditionally linear Gaussian models

In this article, we develop a new Rao-Blackwellized Monte Carlo smoothing algorithm for conditionally linear Gaussian models. The algorithm is based on the forward-filtering backward-simulation Monte Carlo smoother concept and performs the backward simulation directly in the marginal space of the non-Gaussian state component while treating the linear part analytically. Unlike the previously proposed backward-simulation based Rao-Blackwellized smoothing approaches, it does not require sampling of the Gaussian state component and is also able to overcome certain normalization problems of two-filter smoother based approaches. The performance of the algorithm is illustrated in a simulated application. © 2012 IFAC.

Linear semiconductor optical amplifiers

The chapter reviews properties and applications of linear semiconductor optical amplifiers (SOA). Section 12.1 covers SOA basics, including working principles, material systems, structures and their growth. Booster or inline amplifiers as well as low-noise preamplifiers are classified. Section 12.2 discusses the influence of parameters like gain, noise figure, gain saturation, gain and phase dynamics, and alpha-factor. In Sect. 12.3, the application of a linear SOA as a reach extender in future access networks is addressed. The input power dynamic range is introduced, and measurements for on-off keying and phase shift keying signals are shown. Section 12.4 presents the state of the art for commercially available SOA and includes a treatment of reflective SOAs (RSOA) as well. © 2012 Springer-Verlag Berlin Heidelberg.

高原浅水湖泊沉积物中磷、氮形态化学研究

以滇池马村湾和海东湾为研究对象,对其沉积物-间隙水-上覆水三界面中的磷、氮形态作研究,其中钙结合态磷占的比例最大,其次是有机/细菌聚合态磷和残渣磷;总氮含量很高,平均值为2.63mg/g,而亚硝酸盐氮含量很低,其它三种无机氮形态(硝酸盐氮、亚硝酸盐氮和氨氮)之间并不存在恒定的化学计量关系,这主要是无机氮循环还受水体和沉积物中有机氮的影响。调查还表明沉积物中Fe-P含量与间隙水中溶解性磷酸盐磷有着较好的线性关系,沉积物中Fe-P含量与间隙水Eh呈对数关系。

大眼华鳊和伍氏华鳊的形态差异及其物种有效性

分别对大眼华鳊和伍氏华鳊 137尾标本 7个可数性状和 18个可量性状进行主成分分析 ,以探讨这两个种之间的形态差异及其物种有效性。研究结果显示 :无论是在可数性状上还是可量性状上 ,大眼华鳊和伍氏华鳊之间的形态差异并不显著 ,而且大眼华鳊大陆的标本和台湾的标本无明显的不同。此表明 ,大眼华鳊和伍氏华鳊应该为同一个种。根据国际动物命名法规 ,伍氏华鳊应是大眼华鳊的次定同物异名。

碳酸酐酶在中肋骨条藻光合作用中的作用(英文)

探讨了在正常空气条件下生长的中肋骨条藻(Skeletonema costatum)的碳酸酐酶(CA)在其光合固碳中的作用。在中肋骨条藻的胞内和胞外均有CA活性,但胞外CA活性很低。CA抑制剂AZ(乙酰唑磺胺)对中肋骨条藻的光合放氧速率没有明显影响,而CA抑制剂EZ(乙氧苯唑胺)对其光合放氧速率有强烈的抑制作用。EZ的抑制作用使细胞最大光合速率、饱和光强和无机碳亲和力下降,无机碳的补偿点和光呼吸提高,使强光下光抑制作用增强。这些结果表明:中肋骨条藻的胞外CA在其光合作用中所起的作用较小,而其胞内CA通过催化

中国鱼类病原菌耐药质粒

通过细菌接合试验，从 ３１ 株鱼类病原菌中检测到 １ 株含有可自身传递的耐药质粒，命名为 ｐ Ｗ Ｈ１０１。该质粒具有四环素和磺胺 ２ 种抗性，经溴化乙锭处理，获得了该质粒被消除的抗性敏感株。质粒提取及电泳试验也证实了该质粒的存在，其分子量约为 １０７ ｋｂ 。

Asymmetrical low-voltage ride through of brushless doubly fed induction generators for the wind power generation

Compared with the Doubly fed induction generators (DFIG), the brushless doubly fed induction generator (BDFIG) has a commercial potential for wind power generation due to its lower cost and higher reliability. In the most recent grid codes, wind generators are required to be capable of riding through low voltage faults. As a result of the negative sequence, induction generators response differently in asymmetrical voltage dips compared with the symmetrical dip. This paper gave a full behavior analysis of the BDFIG under different types of the asymmetrical fault and proposed a novel control strategy for the BDFIG to ride through asymmetrical low voltage dips without any extra hardware such as crowbars. The proposed control strategies are experimentally verified by a 250-kW BDFIG. © 2012 IEEE.

Hybrid cytomegalovirus-U6 promoter-based plasmid vectors improve efficiency of RNA interference in zebrafish

Short hairpin RNA (shRNA) directed by RNA polymerase III (Pol III) or Pol II promoter was shown to be capable of silencing gene expression, which should permit analyses of gene functions or as a potential therapeutic tool. However, the inhibitory effect of shRNA remains problematic in fish. We demonstrated that silencing efficiency by shRNA produced from the hybrid construct composed of the CMV enhancer or entire CMV promoter placed immediately upstream of a U6 promoter. When tested the exogenous gene, silencing of an enhanced green fluorescent protein (EGFP) target gene was 89.18 +/- 5.06% for CMVE-U6 promoter group and 88.26 +/- 6.46% for CMV-U6 promoter group. To test the hybrid promoters driving shRNA efficiency against an endogenous gene, we used shRNA against no tail (NTL) gene. When vectorized in the zebrafish, the hybrid constructs strongly repressed NTL gene expression. The NTL phenotype occupied 52.09 +/- 3.06% and 51.56 +/- 3.68% for CMVE-U6 promoter and CMV-U6 promoter groups, respectively. The NTL gene expression reduced 82.17 +/- 2.96% for CMVE-U6 promoter group and 83.06 +/- 2.38% for CMV-U6 promoter group. We concluded that the CMV enhancer or entire CMV promoter locating upstream of the U6-promoter could significantly improve inhibitory effect induced by the shRNA for both exogenous and endogenous genes compared with the CMV promoter or U6 promoter alone. In contrast, the two hybrid promoter constructs had similar effects on driving shRNA.

Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer

We have fabricated a quantum dot (QD) structure for long-wavelength temperature-insensitive semiconductor laser by introducing a combined InAlAs and InGaAs overgrowth layer on InAs/GaAs QDs. We found that QDs formed on GaAs (100) substrate by InAs deposition followed by the InAlAs and InGaAs combination layer demonstrate two effects: one is the photoluminescence peak redshift towards 1.35 mum at room temperature, the other is that the energy separation between the ground and first excited states can be up to 103 meV. These results are attributed to the fact that InAs/GaAs intermixing caused by In segregation at substrate temperature of 520 degreesC can be considerably suppressed by the thin InAlAs layer and the strain in the quantum dots can be reduced by the combined InAlAs and InGaAs layer. (C) 2002 American Institute of Physics.

Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy

A systematic study of self-organized In0.5Ga0.5As quantum dots (QDs) and islands grown by molecular beam epitaxy on (100) and (n11) A/B GaAs substrates is given, where n varies from 1 to 5. Low-temperature photoluminescence results show that the properties of the dots have a strong dependence on the substrate orientation as revealed by atomic force microscopy, consistent with the differences in size, shape, and distribution of QDs on different substrates. From (100) to (111) surface, the photoluminescence peak position of dots on B surfaces is found to blueshift more than that on A surfaces. QDs are also formed on (511) A surface. The positional distribution of these dots exhibits a wavy shape, which is related to the corrugated structure of this surface. Two kinds of islands are formed on (111) A surface, but further work is needed to explain the mechanism of these islands. (C) 2001 American Vacuum Society.

Infrared absorption efficiency in AlAs/AlxGa1-xAs type-II multiple-quantum-well structure grown on (211) GaAs substrate

We have made a normal incidence high infrared absorption efficiency AlAs/Al0.55Ga0.45As multiple-quantum-well structure grown on (211) GaAs substrates by molecular beam epitaxy (MBE). A strong infrared absorption signal at 11.6 mu m due to the transition of the ground state to the first excited state, and a small signal at 6.8 mu m due to the transition from the ground state to continuum. were observed. A 45 degrees tilted incidence measurement was also performed on the same sample for the comparison with a normal incidence measurement. Both measurements provide important information about the quantum well absorption efficiency. Efficiencies which evaluate the absorption of electric components perpendicular and parallel to the well plane are eta(perpendicular to) = 25% and eta(parallel to) = 88%, respectively. The total efficiency is then deduced to be eta = 91%. It is apparent that the efficiency eta(parallel to) dominates the total quantum efficiency eta Because an electron in the (211) AlAs well has a small effective mass (m(zx)* or m(zy)*), the normal incidence absorption coefficient is expected to be higher:than that grown on (511) and (311) substrates. Thus, in the present study, we use the (211) substrate to fabricate QWIP. The experimental results indicate the potential of these novel structures for use as normal incidence infrared photodetectors.

Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset of the ZnO/BaTiO3 heterojunction grown by metal-organic chemical vapor deposition. The valence band offset (VBO) is determined to be 0.48 +/- 0.09 eV, and the conduction band offset (CBO) is deduced to be about 0.75 eV using the band gap of 3.1 eV for bulk BaTiO3. It indicates that a type-II band alignment forms at the interface, in which the valence and conduction bands of ZnO are concomitantly higher than those of BaTiO3. The accurate determination of VBO and CBO is important for use of semiconductor/ferroelectric heterojunction multifunctional devices.