The physical properties of basalt at DSDP Hole 45-395A

A detailed study has been made of the physical properties of core samples from Deep Sea Drilling Project Hole 395A. The properties include: density, porosity, compressional and shear wave velocity, thermal conductivity, thermal diffusivity, and electrical resistivity. Of particular importance are the relations among the parameters. Most of the variations in the basalt properties follow the porosity, with smaller inferred dependence on pore structure, original mineralogy differences, and alteration. The sample measurements give very similar results to (and extend previous data from) Mid-Atlantic Ridge drillholes, the sample data from this site and previous data are used to estimate relations between porosity and other large-scale physical properties of the upper oceanic crust applicable to this area. These relations are important for the analysis and interpretation of downhole logging measurements and marine geophysical data.

Susceptibility, conductivity and porosity along a GEM-SHARK profile

The coastal systems, are often subjected to high anthropogenic pressure, which makes it necessary to develop new techniques to assess the environmental impacts caused by such human activity. This paper presents the first results obtained during the development and implementation of a new equipment of submarine geophysics survey oriented to integrated coastal zone management (ICZM). It is based on the drag of a submarine in contact with the sea-bottom. The submarine is equipped with an electromagnetic sensor which allows the measurement of the magnetic susceptibility and electrical conductivity of the surface sediments continuously and to a depth of sediment of 40 cm. This system, once improved, will allow us to obtain valuable information for monitoring the environmental quality of coastal areas.

Conductivity and oxygen isotope measured on ice core FRI09C90_13 (B13) from the Filchner-Ronne ice shelf, Antarctica

The Filchner-Ronne ice shelf, which drains most of the marine-based portions of the West Antarctic ice sheet, is the largest ice shelf on Earth by volume. The origin and properties of the ice that constitutes this shelf are poorly understood, because a strong reflecting interface within the ice and the diffuse nature of the ice?ocean interface make seismic and radio echo sounding data difficult to interpret. Ice in the upper part of the shelf is of meteoric origin, but it has been proposed that a basal layer of saline ice accumulates from below. Here we present the results of an analysis of the physical and chemical characteristics of an ice core drilled almost to the bottom of the Ronne ice shelf. We observe a change in ice properties at about 150 m depth, which we ascribe to a change from meteoric ice to basal marine ice. The basal ice is very different from sea ice formed at the ocean surface and we propose a formation mechanism in which ice platelets in the water column accrete to the bottom of the ice shelf.

Towards the development of poly (phenylene sulphide) based nanocomposites with enhanced mechanical, electrical and tribological properties

Novel poly(phenylene sulphide) (PPS) nanocomposites reinforced with an aminated derivative (PPS-NH2) covalently attached to acid-treated single-walled carbon nanotubes (SWCNTs) were prepared via simple melt-blending technique. Their morphology, viscoelastic behaviour, electrical conductivity, mechanical and tribological properties were investigated. Scanning electron microscopy revealed that the grafting process was effective in uniformly dispersing the SWCNTs within the matrix. The storage and loss moduli as a function of frequency increased with the SWCNT content, tending to a plateau in the low-frequency regime. The electrical conductivity of the nanocomposites was considerably enhanced in the range 0.1?0.5 wt% SWCNTs; electrical and rheological percolation thresholds occurred at similar nanotube concentrations. Mechanical tests demonstrated that with only 1.0 wt% SWCNTs the Young's modulus and tensile strength of the matrix improved by 51 and 37%, respectively, without decrement in toughness, ascribed to a very efficient load transfer. A moderate decrease in the friction coefficient and a 75% reduction in wear rate were found for the abovementioned nanotube loading, indicating that PPS-NH2-g-SWCNTs are good tribological additives for thermoplastic polymers. Based on the promising results obtained in this work, it is expected that these nanofillers will be used to develop high-performance thermoplastic/CNT nanocomposites for structural applications.

Conductivity test in seeds of different passion flower species

The objective of this work was to evaluate the use of the conductivity test as a means of predicting seed viability in seven Passiflora species: P. alata, P. cincinnata, P. edulis f. edulis, P. edulis f. flavicarpa, P. morifolia, P. mucronata, and P. nitida. Conductivity of non?desiccated (control), desiccated, and non?desiccated cryopreserved seeds was determined and related to their germination percentage. The obtained results suggest that the electrical conductivity test has potential as a germination predictor for P. edulis f. flavicarpa seed lots, but not for the other tested species. Index terms: Passiflora, seed cryopreservation, seed desiccation, seed viability.

Electrical investigation of p-type 4H-SiC heavily doped by ion implantation

In the last decades, an increasing interest in the research field of wide bandgap semiconductors was observed, mostly due to the progressive approaching of silicon-based devices to their theoretical limits. 4H-SiC is an example among these, and is a mature compound for applications. The main advantages offered 4H-SiC in comparison with silicon are an higher breakdown field, an higher thermal conductivity, a higher operating temperature, very high hardness and melting point, biocompatibility, but also low switching losses in high frequencies applications and lower on-resistances in unipolar devices. Then, 4H-SiC power devices offer great performance improvement; moreover, they can work in hostile environments where silicon power devices cannot function. Ion implantation technology is a key process in the fabrication of almost all kinds of SiC devices, owing to the advantage of a spatially selective doping. This work is dedicated to the electrical investigation of several differently-processed 4H-SiC ion- implanted samples, mainly through Hall effect and space charge spectroscopy experiments. It was also developed the automatic control (Labview) of several experiments. In the work, the effectiveness of high temperature post-implant thermal treatments (up to 2000°C) were studied and compared considering: (i) different methods, (ii) different temperatures and (iii) different duration of the annealing process. Preliminary p + /n and Schottky junctions were also investigated as simple test devices. 1) Heavy doping by ion implantation of single off-axis 4H-SiC layers The electrical investigation is one of the most important characterization of ion-implanted samples, which must be submitted to mandatory post-implant thermal treatment in order to both (i) recover the lattice after ion bombardment, and (ii) address the implanted impurities into lattice sites so that they can effectively act as dopants. Electrical investigation can give fundamental information on the efficiency of the electrical impurity activation. To understand the results of the research it should be noted that: (a) To realize good ohmic contacts it is necessary to obtain spatially defined highly doped regions, which must have conductivity as low as possible. (b) It has been shown that the electrical activation efficiency and the electrical conductivity increase with the annealing temperature increasing. (c) To maximize the layer conductivity, temperatures around 1700°C are generally used and implantation density high till to 10 21 cm -3 . In this work, an original approach, different from (c), is explored by the using very high annealing temperature, around 2000°C, on samples of Al + -implant concentration of the order of 10 20 cm -3 . Several Al + -implanted 4H-SiC samples, resulting of p-type conductivity, were investigated, with a nominal density varying in the range of about 1-5∙10 20 cm -3 and subjected to two different high temperature thermal treatments. One annealing method uses a radiofrequency heated furnace till to 1950°C (Conventional Annealing, CA), the other exploits a microwave field, providing a fast heating rate up to 2000°C (Micro-Wave Annealing, MWA). In this contest, mainly ion implanted p-type samples were investigated, both off-axis and on-axis <0001> semi-insulating 4H-SiC. Concerning p-type off-axis samples, a high electrical activation of implanted Al (50-70%) and a compensation ratio below 10% were estimated. In the work, the main sample processing parameters have been varied, as the implant temperature, CA annealing duration, and heating/cooling rates, and the best values assessed. MWA method leads to higher hole density and lower mobility than CA in equivalent ion implanted layers, resulting in lower resistivity, probably related to the 50°C higher annealing temperature. An optimal duration of the CA treatment was estimated in about 12-13 minutes. A RT resistivity on the lowest reported in literature for this kind of samples, has been obtained. 2) Low resistivity data: variable range hopping Notwithstanding the heavy p-type doping levels, the carrier density remained less than the critical one required for a semiconductor to metal transition. However, the high carrier densities obtained was enough to trigger a low temperature impurity band (IB) conduction. In the heaviest doped samples, such a conduction mechanism persists till to RT, without significantly prejudice the mobility values. This feature can have an interesting technological fall, because it guarantee a nearly temperature- independent carrier density, it being not affected by freeze-out effects. The usual transport mechanism occurring in the IB conduction is the nearest neighbor hopping: such a regime is effectively consistent with the resistivity temperature behavior of the lowest doped samples. In the heavier doped samples, however, a trend of the resistivity data compatible with a variable range hopping (VRH) conduction has been pointed out, here highlighted for the first time in p-type 4H-SiC. Even more: in the heaviest doped samples, and in particular, in those annealed by MWA, the temperature dependence of the resistivity data is consistent with a reduced dimensionality (2D) of the VRH conduction. In these samples, TEM investigation pointed out faulted dislocation loops in the basal plane, whose average spacing along the c-axis is comparable with the optimal length of the hops in the VRH transport. This result suggested the assignment of such a peculiar behavior to a kind of spatial confinement into a plane of the carrier hops. 3) Test device the p + -n junction In the last part of the work, the electrical properties of 4H-SiC diodes were also studied. In this case, a heavy Al + ion implantation was realized on n-type epilayers, according to the technological process applied for final devices. Good rectification properties was shown from these preliminary devices in their current-voltage characteristics. Admittance spectroscopy and deep level transient spectroscopy measurements showed the presence of electrically active defects other than the dopants ones, induced in the active region of the diodes by ion implantation. A critical comparison with the literature of these defects was performed. Preliminary to such an investigation, it was assessed the experimental set up for the admittance spectroscopy and current-voltage investigation and the automatic control of these measurements.

Tailored conductivity in ion implanted polyetheretherketone

Ion implantation can be used to confer electrical conductivity upon conventional insulating polymers such as polyetheretherketone (PEEK). We have implanted PEEK films using three different types of ion implantation: conventional inert gas and metal ion implantation, and ion beam mixing. We have applied a number of analytical techniques to compare the chemical, structural and electrical properties of these films. The most effective means of increasing electrical conductivity appears to be via ion beam mixing of metals into the polymer, followed by metal ion implantation and finally, inert gas ion implantation. Our results suggest that in all cases, the conducting region corresponds to the implanted layer in the near surface to a depth of similar to750 Angstrom (ion beam mixed) to similar to5000 Angstrom (metal ion). This latter value is significantly higher than would be expected from a purely ballistic standpoint, and can only be attributed to thermal inter-diffusion. Our data also indicates that graphitic carbon is formed within the implant region by chain scission and subsequent cross-linking. All ion implanted samples retained their bulk mechanical properties, i.e. they remained flexible. The implant layers showed no signs of de-lamination. We believe this to be the first comparative study between different implantation techniques, and our results support the proposition that soft electronic circuitry and devices can be created by conductivity engineering with ion beams. (C) 2004 Elsevier B.V. All rights reserved.

Synthesis, characterization, and electrical conduction of 10 mol% Dy2O3 doped CeO2 ceramics

Well-densified 10 mol% Dy2O3-doped CeO2 (20DDC) ceramics with average grain sizes of similar to 0.12-1.5 mu m were fabricated by pressureless sintering at 950-1550 degrees C using a reactive powder thermally decomposed from a carbonate precursor, which was synthesized via a carbonate coprecipitation method employing nitrates as the starting salts and ammonium carbonate as the precipitant. Electrical conductivity of the ceramics, measured by the dc three-point impedance method, shows a V-shape curve against the average grain size. The sample with the smallest grain size of 0.12 mu m exhibits a high conductivity of similar to 10(-1.74) S/cm at the measurement temperature of 700 degrees C, which is about the same conduction level of the micro-grained 10 mol% Sm2O3- or Gd2O3-doped CeO2, two leading electrolyte materials. (c) 2004 Elsevier Ltd. All rights reserved.

A study of the electrical and optical properties of unhydrogenated neon-sputtered amorphous silicon

Films of amorphous silicon (a-Si) were prepared by r.f. sputtering in a Ne plasma without the addition of hydrogen or a halogen. The d.c. dark electrical conductivity, he optical gap and the photoconductivity of the films were investigated for a range of preparation conditions, the sputtering gas pressure, P, the target-substrate spacing, d, the self-bias voltage, Vsb, on the target and the substrate temperature, Ts. The dependence of the electrical and optical properties on these conditions showed that various combinations of P, d and Vsb, at a constant Ts, giving the same product (Pd/V sb) result in films with similar properties, provided that P, d and Vsb remain vithin a certain range. Variation of Pd/Vsb between about 0.2 and 0.8 rrTorr.cm!V varied the dark conductivity over about 4 orders of magnitude, the optical gap by 0.5 eV and the photoconductivity over 4-5 orders of magnitude. This is attributed to controlling the density-of-states distribution in the mobility gap. The temperature-dependence of photoconductivity and the photoresponse of undoped films are in support of this conclusion. Films prepared at relatively high (Pd/Vsb) values and Ts=300 ºc: exhibited low dark-conductivity and high thermal activation energy, optical gap and photoresponse, characteristic properties of a 'low density-of-states material. P-type doping with group-Ill elements (Al, B and Ga) by sputtering from a composite target or from a predoped target (B-.doped) was investigated. The systematic variation of room-temperature conductivity over many orders of magnitude and a Fermi-level shift of about 0.7 eV towards the valence-band edge suggest that substitutional doping had taken place. The effects of preparation conditions on doping efficiency were also investigated. The post-deposition annealing of undoped and doped films were studied for a temperature range from 250 ºC to 470 ºC. It was shown that annealing enhanced the doping efficiency considerably, although it had little effect on the basic material (a-Si) prepared at the optimum conditions (Pd/Vsb=0.8 mTorr.cm/V and Ts=300 $ºC). Preliminary experiments on devices imply potential applications of the present material, such as p-n and MS junctions.

Preparation and electrical properties of graphene nanosheet/Al2O3 composites

Fully dense graphene nanosheet(GNS)/Al2O3 composites with homogeneously distributed GNSs of thicknesses ranging from 2.5 to 20 nm have been fabricated from ball milled expanded graphite and Al2O3 by spark plasma sintering. The percolation threshold of electrical conductivity of the as-prepared GNS/Al2O3 composites is around 3 vol.%, and this new composite outperforms most of carbon nanotube/Al2O3 composites in electrical conductivity. The temperature dependence of electrical conductivity indicated that the as-prepared composites behaved as a semimetal in a temperature range from 2 to 300 K.

Development of functionalised multiwalled carbon nanotube/polyaniline composites for electrical applications

Combining intrinsically conducting polymers with carbon nanotubes (CNT) helps in creating composites with superior electrical and thermal characteristics. These composites are capable of replacing metals and semiconductors as they possess unique combination of electrical conductivity, flexibility, stretchability, softness and bio-compatibility. Their potential for use in various organic devices such as super capacitors, printable conductors, optoelectronic devices, sensors, actuators, electrochemical devices, electromagnetic interference shielding, field effect transistors, LEDs, thermoelectrics etc. makes them excellent substitutes for present day semiconductors.However, many of these potential applications have not been fully exploited because of various open–ended challenges. Composites meant for use in organic devices require highly stable conductivity for the longevity of the devices. CNT when incorporated at specific proportions, and with special methods contributes quite positively to this end.The increasing demand for energy and depleting fossil fuel reserves has broadened the scope for research into alternative energy sources. A unique and efficient method for harnessing energy is thermoelectric energy conversion method. Here, heat is converted directly into electricity using a class of materials known as thermoelectric materials. Though polymers have low electrical conductivity and thermo power, their low thermal conductivity favours use as a thermoelectric material. The thermally disconnected, but electrically connected carrier pathways in CNT/Polymer composites can satisfy the so-called “phonon-glass/electron-crystal” property required for thermoelectric materials. Strain sensing is commonly used for monitoring in engineering, medicine, space or ocean research. Polymeric composites are ideal candidates for the manufacture of strain sensors. Conducting elastomeric composites containing CNT are widely used for this application. These CNT/Polymer composites offer resistance change over a large strain range due to the low Young‟s modulus and higher elasticity. They are also capable of covering surfaces with arbitrary curvatures.Due to the high operating frequency and bandwidth of electronic equipments electromagnetic interference (EMI) has attained the tag of an „environmental pollutant‟, affecting other electronic devices as well as living organisms. Among the EMI shielding materials, polymer composites based on carbon nanotubes show great promise. High strength and stiffness, extremely high aspect ratio, and good electrical conductivity of CNT make it a filler of choice for shielding applications. A method for better dispersion, orientation and connectivity of the CNT in polymer matrix is required to enhance conductivity and EMI shielding. This thesis presents a detailed study on the synthesis of functionalised multiwalled carbon nanotube/polyaniline composites and their application in electronic devices. The major areas focused include DC conductivity retention at high temperature, thermoelectric, strain sensing and electromagnetic interference shielding properties, thermogravimetric, dynamic mechanical and tensile analysis in addition to structural and morphological studies.

Electrical and dielectric properties of uncoated and coated wood-free paper for electrophotography

The print substrate influences the print result in dry toner electrophotography, which is a widely used digital printing method. The influence of the substrate can be seen more easily in color printing, as that is a more complex process compared to monochrome printing. However, the print quality is also affected by the print substrate in grayscale printing. It is thus in the interests of both substrate producers and printing equipment manufacturers to understand the substrate properties that influence the quality of printed images in more detail. In dry toner electrophotography, the image is printed by transferring charged toner particles to the print substrate in the toner transfer nip, utilizing an electric field, in addition to the forces linked to the contact between toner particles and substrate in the nip. The toner transfer and the resulting image quality are thus influenced by the surface texture and the electrical and dielectric properties of the print substrate. In the investigation of the electrical and dielectric properties of the papers and the effects of substrate roughness, in addition to commercial papers, controlled sample sets were made on pilot paper machines and coating machines to exclude uncontrolled variables from the experiments. The electrical and dielectric properties of the papers investigated were electrical resistivity and conductivity, charge acceptance, charge decay, and the dielectric permittivity and losses at different frequencies, including the effect of temperature. The objective was to gain an understanding of how the electrical and dielectric properties are affected by normal variables in papermaking, including basis weight, material density, filler content, ion and moisture contents, and coating. In addition, the dependency of substrate resistivity on the electric field applied was investigated. Local discharging did not inhibit transfer with the paper roughness levels that are normal in electrophotographic color printing. The potential decay of paper revealed that the charge decay cannot be accurately described with a single exponential function, since in charge decay there are overlapping mechanisms of conduction and depolarization of paper. The resistivity of the paper depends on the NaCl content and exponentially on moisture content although it is also strongly dependent on the electric field applied. This dependency is influenced by the thickness, density, and filler contents of the paper. Furthermore, the Poole-Frenkel model can be applied to the resistivity of uncoated paper. The real part of the dielectric constant ε’ increases with NaCl content and relative humidity, but when these materials cannot polarize freely, the increase cannot be explained by summing the effects of their dielectric constants. Dependencies between the dielectric constant and dielectric loss factor and NaCl content, temperature, and frequency show that in the presence of a sufficient amount of moisture and NaCl, new structures with a relaxation time of the order of 10-3 s are formed in paper. The ε’ of coated papers is influenced by the addition of pigments and other coating additives with polarizable groups and due to the increase in density. The charging potential decreases and the electrical conductivity, potential decay rate, and dielectric constant of paper increase with increasing temperature. The dependencies are exponential and the temperature dependencies and their activation energies are altered by the ion content. The results have been utilized in manufacturing substrates for electrophotographic color printing.

Efeitos dos fatores ambientais na comunidade de macrófitas em pequenos cursos lóticos perenes subtropicais

Neste estudo foi investigado como a distribuição das espécies e a produção de biomassa de macrófitas aquáticas são influenciadas pelas condições físico-químicas do ambiente. Também foi avaliado como uma espécie com maior potencial competitivo pode interferir na diversidade de espécies da comunidade macrofítica. Para tanto, em cada um dos três arroios, foram dispostos seis transecções, perpendiculares à margem. Em cada transecção foram demarcadas três unidades amostrais de 1m², nas quais foram registrados os parâmetros fitossociológicos cobertura e frequência relativas e valor de importância. A diversidade de espécies foi estimada pelo índice de Shannon, utilizando os valores de cobertura de espécies. Para determinar a biomassa das macrófitas aquáticas foram usados quadrats de 0,25m², alocados dentro da unidade amostral de 1m² usadas para quantificar os dados fitossociológicos, nos mesmos pontos onde foi feito o levantamento de cobertura da vegetação. Utilizamos como variáveis preditoras a velocidade da corrente, radiação solar incidente, coeficiente de sombreamento, vegetação ripária arbórea adjacente, nitrogênio orgânico dissolvido, carbono orgânico dissolvido e condutividade elétrica. Foram registradas 32 espécies de macrófitas aquáticas, distribuídas em 19 famílias e 28 gêneros. Conforme Análise de Correspondência Canônica (CCA), as espécies com maiores valores de biomassa foram relacionadas a unidades amostrais com alta incidência luminosa. As unidades amostrais com dominância de Pistia stratiotes apresentaram menor diversidade de espécies indicando que esta espécie, quando encontra condições que permitam sua proliferação, pode excluir espécies de menor potencial competitivo. De acordo com GLM (Generalized Linear Model), a ausência de vegetação ripária ou presente em apenas uma das margens e baixas velocidades de corrente configura-se em condições favoráveis ao estabelecimento e desenvolvimento de macrófitas aquáticas, possibilitando produção maiores valores de biomassa.

Properties of polycrystalline gas sensors based on d.c. and a.c. electrical measurements

Electrical properties of polycrystalline gas sensors are analyzed by d.c. and a.c. measurements. d.c. electrical conductivity values compared with those obtained by admittance spectroscopy methods help to obtain a detailed 'on line' analysis of conductivity-modulated gas sensors. The electrical behaviour of grain boundaries is obtained and a new design of sensors can be achieved by enhancing the activity of surface states in the detecting operation. A Schottky barrier model is used to explain the grain boundary action under the presence of surrounding gases. The height of this barrier is a function of gas concentration due to the trapping of excess charge generated by gas adsorption at the interface. A comparison between this dependence, and a plot of the real and imaginary components of the admittance versus frequency at different gas concentrations, provides information on the different parameters that play a role in the conduction mechanisms. These methods have been applied to the design of a CO sensor based on tin oxide films for domestic purposes, the characteristics of which are presented.