Synthesis and characterization of spherical Sr2CeO4 phosphors by spray pyrolysis for field emission displays

A blue emitting Sr2CeO4 phosphor with a one-dimensional structure has been prepared by a two-step spray pyrolysis (SP) method, starting from the aqueous solutions of metal nitrates with citric acid and polyethylene glycol (PEG) as additives. The material is ultimately designed for field emission displays (FEDs). X-ray diffraction (XRD), thermogravimetric and differential thermal analysis (TG-DTA), field emission scanning electron microscope pictures (FE-SEM) as well as photoluminescence (PL) and cathodoluminescence (CL) spectroscopy and lifetime measurements have been employed to characterize the samples. The morphology, PL and low voltage CL properties of Sr2CeO4 phosphors as-prepared using the SP method have been investigated by changing the concentration of the precursor solution, concentration of PEG, annealing temperature, acceleration voltage and filament current. The obtained Sr2CeO4 phosphor particles are spherical and of submicron size, 0.5-2 mu m. The emission spectrum of the phosphors shows a broad band with maximum at 467 nm (lifetime = 37.4 mu s; CIE chromaticity coordinates: x = 0.15 and y = 0.21), presumably due to a ligand-to-metal charge-transfer transition.

On-chip electron-impact ion source using carbon nanotube field emitters

A lateral on-chip electron-impact ion source utilizing a carbon nanotube field emission electron source was fabricated and characterized. The device consists of a cathode with aligned carbon nanotubes, a control grid, and an ion collector electrode. The electron-impact ionization of He, Ar, and Xe was studied as a function of field emission current and pressure. The ion current was linear with respect to gas pressure from 10-4 to 10-1 Torr. The device can operate as a vacuum ion gauge with a sensitivity of approximately 1 Torr-1. Ion currents in excess of 1 μA were generated. © 2007 American Institute of Physics.

Double-electron above threshold ionization of helium

We present calculations of intense-field multiphoton ionization processes in helium at XUV wavelengths. The calculations are obtained from a full-dimensional integration of the two-electron time-dependent Schrödinger equation. A momentum-space analysis of the ionizing two-electron wavepacket reveals the existence of double-electron above threshold ionization (DATI). In momentum-space two distinct forms of DATI are resolved, namely non-sequential and sequential. In non-sequential DATI correlated electrons resonantly absorb and share energy in integer units of Ïlaser.

On the investigation of fast electron beam filamentation in laser-irradiated solid targets using multi-MeV proton emission

The transverse filamentation of beams of fast electrons transported in solid targets irradiated by ultraintense (5 x 10(20) W cm(-2)), picosecond laser pulses is investigated experimentally. Filamentation is diagnosed by measuring the uniformity of a beam of multi-MeV protons accelerated by the sheath field formed by the arrival of the fast electrons at the rear of the target, and is investigated for metallic and insulator targets ranging in thickness from 50 to 1200 mu m. By developing an analytical model, the effects of lateral expansion of electron beam filaments in the sheath during the proton acceleration process is shown to account for measured increases in proton beam nonuniformity with target thickness for the insulating targets.

Lateral electron transport in high-intensity laser-irradiated foils diagnosed by ion emission

An experimental investigation of lateral electron transport in thin metallic foil targets irradiated by ultraintense (>= 10(19) W/cm(2)) laser pulses is reported. Two-dimensional spatially resolved ion emission measurements are used to quantify electric-field generation resulting from electron transport. The measurement of large electric fields (similar to 0.1 TV/m) millimeters from the laser focus reveals that lateral energy transport continues long after the laser pulse has decayed. Numerical simulations confirm a very strong enhancement of electron density and electric field at the edges of the target.

Effects of resistive magnetic field on fast electron divergence measured in experiments

Transport of fast electrons driven by an ultraintense laser through a tracer layer buried in solid targets is studied by particle-in-cell simulations. It is found that intense resistive magnetic fields, having a magnitude of several thousand Tesla, are generated at the interfaces of the materials due to the steep resistivity gradient between the target and tracer layer. Such magnetic fields can significantly inhibit the fast electron propagation. The electrons that can penetrate the first interface are mostly confined in the buried layer by the magnetic fields and cause heating of the tracer layer. The lateral extent of the heated region can be significantly larger than that of the relativistic electron beam. This finding suggests that the relativistic electron divergence inferred from Ká x-ray emission in experiments might be overestimated.

Fast-electron refluxing effects on anisotropic hard-x-ray emission from intense laser-plasma interactions

Fast-electron generation and dynamics, including electron refluxing, is at the core of understanding high-intensity laser-plasma interactions. This field is itself of strong relevance to fast ignition fusion and the development of new short-pulse, intense, x-ray, gamma-ray, and particle sources. In this paper, we describe experiments that explicitly link fast-electron refluxing and anisotropy in hard-x-ray emission. We find the anisotropy in x-ray emission to be strongly correlated to the suppression of refluxing. In contrast to some previous work, the peak of emission is directly along the rear normal to the target rather than along either the incident laser direction or the specular reflection direction.

Electron rescattering in strong-field photodetachment of F-

We present ab initio studies of photoelectron spectra for above threshold detachment (ATD) of F- anions in short, 1300 nm and 1800 nm laser pulses. We identify and assess the importance of electron rescattering in strong-field photodetachment of a negative ion through comparison with an analytic, Keldysh-type approach, demonstrating the capability of ab-initio computation in the challenging near-IR regime. We further assess the influence of the strong electron correlation on the photodetachment.

Field-emission characteristics of conical boron nitride nanorods

We present the electron field-emission (FE) characteristics of conical boron nitride nanorods grown on a (1 0 0) n-type silicon substrate. The emission current can be up to ~60 µA at an applied voltage of ~3 kV. Two distinct slopes are evident in the Fowler–Nordheim (FN) plot. The FE characteristics can be explained using a site-related tunnelling-controlled mechanism. The occurrence of two FN slopes is attributed to the switchover from tip emission to side emission, which results from the differences in interface barrier, geometry, as well as the total emission area of the two emission interfaces.

Field emission properties from boron nitride nanotube field emitters

Boron nitride nanotubes (BNNTs) have been studied as a field emission material due to their unique and excellent properties such as high oxidation resistance and negative electron affinity. However, field emission properties of BNNT field emitters were rarely reported until now because it is difficult to synthesize high purity BNNTs and fabricate stable BNNT field emitters. Here, we report high field emission properties from BNNT field emitters fabricated on a tungsten rod.

High-density large-scale field emitter arrays for x-ray free electron laser cathodes

High brightness electron sources are of great importance for the operation of the hard X-ray free electron lasers. Field emission cathodes based on the double-gate metallic field emitter arrays (FEAs) can potentially offer higher brightness than the currently used ones. We report on the successful application of electron beam lithography for fabrication of the large-scale single-gate as well as double-gate FEAs. We demonstrate operational high-density single-gate FEAs with sub-micron pitch and total number of tips up to 106 as well as large-scale double-gate FEAs with large collimation gate apertures. The details of design, fabrication procedure and successful measurements of the emission current from the single- and double-gate cathodes are presented.

Collimated Field Emission Beams from Metal Double-Gate Nanotip Arrays Optically Excited via Surface Plasmon Resonance

The generation of collimated electron beams from metal double-gate nanotip arrays excited by near infrared laser pulses is studied. Using electromagnetic and particle tracking simulations, we showed that electron pulses with small rms transverse velocities are efficiently produced from nanotip arrays by laser-induced field emission with the laser wavelength tuned to surface plasmon polariton resonance of the stacked double-gate structure. The result indicates the possibility of realizing a metal nanotip array cathode that outperforms state-of-the-art photocathodes.

A study of field emission from cadmium sulphide

It was decided to investigate field emission from cadmium sulphide because many workers have found that the agreement between theory and experiment for this material, and other semiconductors, is poor. An electron energy analyser, similar to those used in most of the previously reported experiments, was, therefore, built. The performance of the analyser was thoroughly investigated both theoretically and practically and the results of these investigations were used in conjunction with a tungsten emitter. Excellent agreement was obtained between the usually accepted total energy distribution for tungsten and the corresponding .distribution measured with the present analyser. A method of obtaining reliable cadmium sulphide emitter was developed. These emitters were then used in the analyser and it was found that the agreement between theory and experiment was poor. Previous explanations of the lack of agreement are considered and are found to be doubtful. The theory of field emission from semiconductors is reviewed and possible reasons for the discrepancy between theory and experiment are proposed. Finally, further experiments are described which should prove or disprove the conclusions arrived at in this work.

Robust and high current cold electron source based on carbon nanotube field emitters and electron multiplier microchannel plate

The aim of this research was to demonstrate a high current and stable field emission (FE) source based on carbon nanotubes (CNTs) and electron multiplier microchannel plate (MCP) and design efficient field emitters. In recent years various CNT based FE devices have been demonstrated including field emission displays, x-ray source and many more. However to use CNTs as source in high powered microwave (HPM) devices higher and stable current in the range of few milli-amperes to amperes is required. To achieve such high current we developed a novel technique of introducing a MCP between CNT cathode and anode. MCP is an array of electron multipliers; it operates by avalanche multiplication of secondary electrons, which are generated when electrons strike channel walls of MCP. FE current from CNTs is enhanced due to avalanche multiplication of secondary electrons and in addition MCP also protects CNTs from irreversible damage during vacuum arcing. Conventional MCP is not suitable for this purpose due to the lower secondary emission properties of their materials. To achieve higher and stable currents we have designed and fabricated a unique ceramic MCP consisting of high SEY materials. The MCP was fabricated utilizing optimum design parameters, which include channel dimensions and material properties obtained from charged particle optics (CPO) simulation. Child Langmuir law, which gives the optimum current density from an electron source, was taken into account during the system design and experiments. Each MCP channel consisted of MgO coated CNTs which was chosen from various material systems due to its very high SEY. With MCP inserted between CNT cathode and anode stable and higher emission current was achieved. It was ∼25 times higher than without MCP. A brighter emission image was also evidenced due to enhanced emission current. The obtained results are a significant technological advance and this research holds promise for electron source in new generation lightweight, efficient and compact microwave devices for telecommunications in satellites or space applications. As part of this work novel emitters consisting of multistage geometry with improved FE properties were was also developed.

Enhancement of field emission from multistage structure of carbon nanotube arrays

The field emission measurements for the multistage structured nanotubes (i.e., thin-multiwall and single wall carbon nanotubes grown on multiwall carbon nanotubes) were carried out and a low turn-on field of ~0.45 V/ μm, high emission current of 450 μA at a field of IV/μm and a large field enhancement factor of ~26200 were obtained. The thin multiwall carbon nanotubes (thin-MWNTs) and single wall carbon nanotubes (SWNTs) were grown on the regular arrays of vertically aligned multi wall carbon nanotubes (MWNTs) on porous silicon substrate by Chemical Vapor Deposition (CVD) method. The thin-MWNTs and SWNTs grown on MWNTs in this way have a multistage structure which gives higher enhancement of the electric field and hence the electron field emission.