990 resultados para laser method
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AIM To evaluate the performance of a pen‑type laser fluorescence device (DIAGNOdent 2190; LFpen, KaVo, Germany) and bitewing radiographs (BW) for approximal caries detection in permanent and primary teeth. MATERIALS AND METHODS A total of 246 anterior approximal surfaces (102 permanent and 144 primary) were selected. Contact points were simulated using sound teeth. Two examiners assessed all approximal surfaces using LFpen and BW. The teeth were histologically assessed for the reference standard. Optimal cut‑off limits were calculated for LFpen for primary and permanent teeth. Sensitivity, specificity, accuracy and area under the receiver operating characteristic curve (Az) were calculated for D1 (enamel and dentin lesions) and D3 (dentin lesions) thresholds. The reproducibility was assessed by intraclass correlation coefficient (ICC) and Cohen's weighted kappa values. RESULTS For permanent teeth, the LFpen cut‑off were 0- 27 (sound), 28- 33 (enamel caries) and >33 (dentin caries). For primary teeth, the LFpen cut‑off were 0- 7 (sound), 8- 32 (enamelcaries) and >32 (dentin caries). The LFpen presented higher sensitivity values than BW for primary teeth (0.58 vs. 0.32 at D1 and 0.80 vs. 0.47 at D3) and permanent teeth (0.80 vs. 0.57 at D1 and 0.94 vs. 0.51 at D3). Specificity did not show a significant difference between the methods. Rank correlations with histology were 0.59 and 0.83 (LFpen) and 0.36 and 0.70 (BW) for primary and permanent teeth, respectively, considering all lesions. ICC values for LFpen were 0.71 (inter) and 0.86 (intra) for permanent teeth and 0.94 (inter) and 0.90/0.99 for primary teeth. Kappa values for BW were 0.69 (inter) and 0.68/0.90 (intra) for permanent teeth and 0.64 (inter) and 0.89/0.89 for primary teeth. CONCLUSION LFpen presented better reproducibility for primary and permanent teeth and higher accuracy in detecting caries lesions at D1 threshold than BW for permanent teeth. LFpen should be used as an adjunct method for approximal caries detection.
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A number of liquid argon time projection chambers (LAr TPCs) are being built or are proposed for neutrino experiments on long- and short baseline beams. For these detectors, a distortion in the drift field due to geometrical or physics reasons can affect the reconstruction of the events. Depending on the TPC geometry and electric drift field intensity, this distortion could be of the same magnitude as the drift field itself. Recently, we presented a method to calibrate the drift field and correct for these possible distortions. While straight cosmic ray muon tracks could be used for calibration, multiple coulomb scattering and momentum uncertainties allow only a limited resolution. A UV laser instead can create straight ionization tracks in liquid argon, and allows one to map the drift field along different paths in the TPC inner volume. Here we present a UV laser feed-through design with a steerable UV mirror immersed in liquid argon that can point the laser beam at many locations through the TPC. The straight ionization paths are sensitive to drift field distortions, a fit of these distortion to the linear optical path allows to extract the drift field, by using these laser tracks along the whole TPC volume one can obtain a 3D drift field map. The UV laser feed-through assembly is a prototype of the system that will be used for the MicroBooNE experiment at the Fermi National Accelerator Laboratory (FNAL).
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Recent studies of Schwinger pair production have demonstrated that the asymptotic particle spectrum is extremely sensitive to the applied field profile. We extend the idea of the dynamically assisted Schwinger effect from single pulse profiles to more realistic field configurations to be generated in an all-optical experiment searching for pair creation. We use the quantum kinetic approach to study the particle production and employ a multi-start method, combined with optimal control theory, to determine a set of parameters for which the particle yield in the forward direction in momentum space is maximized. We argue that this strategy can be used to enhance the signal of pair production on a given detector in an experimental setup.
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BACKGROUND Port-wine stains (PWS) are malformations of capillaries in 0.3% of newborn children. The treatment of choice is by pulsed dye LASER (PDL), and requires several sessions. The efficacy of this treatment is at present evaluated on the basis of clinical inspection and of digital photographs taken throughout the treatment. LASER-Doppler imaging (LDI) is a noninvasive method of imaging the perfusion of the tissues by the microcirculatory system (capillaries). The aim of this paper is to demonstrate that LDI allows a quantitative, numerical evaluation of the efficacy of the PDL treatment of PWS. METHOD The PDL sessions were organized according to the usual scheme, every other month, from September 1, 2012, to September 30, 2013. LDI imaging was performed at the start and at the conclusion of the PDL treatment, and simultaneously on healthy skin in order to obtain reference values. The results evidenced by LDI were analyzed according to the "Wilcoxon signed-rank" test before and after each session, and in the intervals between the three PDL treatment sessions. RESULTS Our prospective study is based on 20 new children. On average, the vascularization of the PWS was reduced by 56% after three laser sessions. Compared with healthy skin, initial vascularization of PWS was 62% higher than that of healthy skin at the start of treatment, and 6% higher after three sessions. During the 2 months between two sessions, vascularization of the capillary network increased by 27%. CONCLUSION This study shows that LDI can demonstrate and measure the efficacy of PDL treatment of PWS in children. The figures obtained when measuring the results by LDI corroborate the clinical assessments and may allow us to refine, and perhaps even modify, our present use of PDL and thus improve the efficacy of the treatment.
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In this work we propose a method for cleaving silicon-based photonic chips by using a laser based micromachining system, consisting of a ND:YVO4laser emitting at 355 nm in nanosecond pulse regime and a micropositioning system. The laser makes grooved marks placed at the desired locations and directions where cleaves have to be initiated, and after several processing steps, a crack appears and propagate along the crystallographic planes of the silicon wafer. This allows cleavage of the chips automatically and with high positioning accuracy, and provides polished vertical facets with better quality than the obtained with other cleaving process, which eases the optical characterization of photonic devices. This method has been found to be particularly useful when cleaving small-sized chips, where manual cleaving is hard to perform; and also for polymeric waveguides, whose facets get damaged or even destroyed with polishing or manual cleaving processing. Influence of length of the grooved line and speed of processing is studied for a variety of silicon chips. An application for cleaving and characterizing sol–gel waveguides is presented. The total amount of light coupled is higher than when using any other procedure.
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Although there are numerous accurate measuring methods to determine soil moisture content in a spot, until very recently there were no precise in situ and in real time methods that were able to measure soil moisture content along a line. By means of the Distributed Fiber Optic Temperature Measurement method or DFOT, the temperature in 0.12 m intervals and long distances (up to 10,000 m) with a high time frequency and an accuracy of +0.2º C is determined. The principle of temperature measurement along a fiber optic cable is based on the thermal sensitivity of the relative intensities of backscattered photons that arise from collisions with electrons in the core of the glass fiber. A laser pulse, generated by the DTS unit, traversing a fiber optic cable will result in backscatter at two frequencies. The DTS quantifies the intensity of these backscattered photons and elapsed time between the pulse and the observed returned light. The intensity of one of the frequencies is strongly dependent on the temperature at the point where the scattering process occurred. The computed temperature is attributed to the position along the cable from which the light was reflected, computed from the time of travel for the light.
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We demonstrate a simple self-referenced single-shot method for simultaneously measuring two different arbitrary pulses, which can potentially be complex and also have very different wavelengths. The method is a variation of cross-correlation frequency-resolved optical gating (XFROG) that we call double-blind (DB) FROG. It involves measuring two spectrograms, both of which are obtained simultaneously in a single apparatus. DB FROG retrieves both pulses robustly by using the standard XFROG algorithm, implemented alternately on each of the traces, taking one pulse to be ?known? and solving for the other. We show both numerically and experimentally that DB FROG using a polarization-gating beam geometry works reliably and appears to have no nontrivial ambiguities.
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The influence of nanosecond laser pulses applied by laser shock peening without absorbent coating (LSPwC) with a Q-switched Nd:YAG laser operating at a wavelength of λ = 1064 nm on 6082-T651 Al alloy has been investigated. The first portion of the present study assesses laser shock peening effect at two pulse densities on three-dimensional (3D) surface topography characteristics. In the second part of the study, the peening effect on surface texture orientation and micro-structure modification, i.e. the effect of surface craters due to plasma and shock waves, were investigated in both longitudinal (L) and transverse (T) directions of the laser-beam movement. In the final portion of the study, the changes of mechanical properties were evaluated with a residual stress profile and Vickers micro-hardness through depth variation in the near surface layer, whereas factorial design with a response surface methodology (RSM) was applied. The surface topographic and micro-structural effect of laser shock peening were characterised with optical microscopy, InfiniteFocus® microscopy and scanning electron microscopy (SEM). Residual stress evaluation based on a hole-drilling integral method confirmed higher compression at the near surface layer (33 μm) in the transverse direction (σmin) of laser-beam movement, i.e. − 407 ± 81 MPa and − 346 ± 124 MPa, after 900 and 2500 pulses/cm2, respectively. Moreover, RSM analysis of micro-hardness through depth distribution confirmed an increase at both pulse densities, whereas LSPwC-generated shock waves showed the impact effect of up to 800 μm below the surface. Furthermore, ANOVA results confirmed the insignificant influence of LSPwC treatment direction on micro-hardness distribution indicating essentially homogeneous conditions, in both L and T directions.
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We present improved experimental transition probabilities for the optical Ca I 4s4p-4s4d and 4s4p-4p2multiplets. The values were determined with an absolute uncertainty of 10%. Transition probabilities have been determined by the branching ratios from the measurement of relative line intensities emitted by laser-induced plasma (LIP). The line intensities were obtained with the target (leadcalcium) placed in argon atmosphere at 6 Torr, recorded at a 2.5 µs delay from the laser pulse, which provides appropriate measurement conditions, and analysed between 350.0 and 550.0 nm. They are measured when the plasma reaches local thermodynamic equilibrium (LTE). The plasma is characterized by electron temperature (T) of 11400 K and an electron number density (Ne) of 1.1 x 1016 cm-3. The influence self-absorption has been estimated for every line, and plasma homogeneity has been checked. The values obtained were compared with previous experimental values in the literature. The method for measurement of transition probabilities using laser-induced plasma as spectroscopic source has been checked.
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A method of unpolarized laser pulses shaping is reported. The basis of the method is the use of an hybrid optical bistable device with nematic liquid-crystals, similar to the one previously reported by us. A sample of the input light constrols, by an asymmetrical electronic comparator, a 1 x 2 electro-optical total switch. The output pulses are reshaped and maintain the same polarization properties as the input light. From triangular input light signals, symmetriacl and asymmetrical output pulses have been obtained. The minimum pulse width achieved was 0.1 msec. A representation of the output versus input light signals gives an hysteresys cycle in the asymmetrical case.
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In this paper we report a new method of laser pulse shaping by the use of liquid crystals as non linear materials. The basis of this method is similar to the one reported by us for an hybrid optical bistable device, but with a different electronic circuitry and feedback.
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We present direct-drive target design studies for the laser mégajoule using two distinct initial aspect ratios (A = 34 and A = 5). Laser pulse shapes are optimized by a random walk method and drive power variations are used to cover a wide variety of implosion velocities between 260 km/s and 365 km/s. For selected implosion velocities and for each initial aspect ratio, scaled-target families are built in order to find self-ignition threshold. High-gain shock ignition is also investigated in the context of Laser MégaJoule for marginally igniting targets below their own self-ignition threshold.
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Crystallization and grain growth technique of thin film silicon are among the most promising methods for improving efficiency and lowering cost of solar cells. A major advantage of laser crystallization and annealing over conventional heating methods is its ability to limit rapid heating and cooling to thin surface layers. Laser energy is used to heat the amorphous silicon thin film, melting it and changing the microstructure to polycrystalline silicon (poly-Si) as it cools. Depending on the laser density, the vaporization temperature can be reached at the center of the irradiated area. In these cases ablation effects are expected and the annealing process becomes ineffective. The heating process in the a-Si thin film is governed by the general heat transfer equation. The two dimensional non-linear heat transfer equation with a moving heat source is solve numerically using the finite element method (FEM), particularly COMSOL Multiphysics. The numerical model help to establish the density and the process speed range needed to assure the melting and crystallization without damage or ablation of the silicon surface. The samples of a-Si obtained by physical vapour deposition were irradiated with a cw-green laser source (Millennia Prime from Newport-Spectra) that delivers up to 15 W of average power. The morphology of the irradiated area was characterized by confocal laser scanning microscopy (Leica DCM3D) and Scanning Electron Microscopy (SEM Hitachi 3000N). The structural properties were studied by micro-Raman spectroscopy (Renishaw, inVia Raman microscope).
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In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 104 cm−1 in the photons energy range from 1.1 to 0.6 eV.