907 resultados para forced mobility
Resumo:
Organic thin-film transistors based on polycrystalline copper phthalocyanine (CuPc) were fabricated by using poly(vinyl alcohol) as gate dielectric. After treatment of the gate dielectric using an octadecyltrichlorosilane self-assembled monolayer, a mobility of up to 0.11 cm2/V∈s was achieved, which is comparable to that of single-crystal CuPc devices (0.1-1 cm2/V∈s). The surface morphology was analyzed and the possible reasons for the enhanced mobility are discussed. © 2009 Springer-Verlag.
Resumo:
Increasing demand for energy and continuing increase in environmental as well as financial cost of use of fossil fuels drive the need for utilization of fuels from sustainable sources for power generation. Development of fuel-flexible combustion systems is vital in enabling the use of sustainable fuels. It is also important that these sustainable combustion systems meet the strict governmental emission legislations. Biogas is considered as one of the viable sustainable fuels that can be used to power modern gas turbines: However, the change in chemical, thermal and transport properties as well as change in Wobbe index due to the variation of the fuel constituents can have a significant effect on the performance of the combustor. It is known that the fuel properties have strong influence on the dynamic flame response; however there is a lack of detailed information regarding the effect of fuel compositions on the sensitivity of the flames subjected to flow perturbations. In this study, we describe an experimental effort investigating the response of premixed biogas-air turbulent flames with varying proportions of CH4 and CO2 to velocity perturbations. The flame was stabilized using a centrally placed conical bluff body. Acoustic perturbations were imposed to the flow using loud speakers. The flame dynamics and the local heat release rate of these acoustically excited biogas flames were studied using simultaneous measurements of OH and H2CO planar laser induced fluorescence. OH* chemiluminescence along with acoustic pressure measurements were also recorded to estimate the total flame heat release modulation and the velocity fluctuations. The measurements were carried out by keeping the theoretical laminar flame speed constant while varying the bulk velocity and the fuel composition. The results indicate that the flame sensitivity to perturbations increased with increased dilution of CH4 by CO2 at low amplitude forcing, while at high amplitude forcing conditions the magnitude of the flame response was independent of dilution.
Resumo:
Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distorts the extracted device parameters, in particular, the field-effect mobility. This letter presents a method capable of accounting for both the non-ohmic (nonlinear) and ohmic (linear) contact resistance effects solely based upon terminal I-V measurements. Applying our analysis to a nanocrystalline silicon thin film transistor, we demonstrate that contact resistance effects can lead to a twofold underestimation of the field-effect mobility. © 2008 American Institute of Physics.
Resumo:
We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.
Resumo:
The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm 2/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth. © 2012 American Chemical Society.
Resumo:
The ability of hydrodynamically self-excited jets to lock into strong external forcing is well known. Their dynamics before lock-in and the specific bifurcations through which they lock in, however, are less well known. In this experimental study, we acoustically force a low-density jet around its natural global frequency. We examine its response leading up to lock-in and compare this to that of a forced van der Pol oscillator. We find that, when forced at increasing amplitudes, the jet undergoes a sequence of two nonlinear transitions: (i) from periodicity to T{double-struck}2 quasiperiodicity via a torus-birth bifurcation; and then (ii) from T{double-struck}2 quasiperiodicity to 1:1 lock-in via either a saddle-node bifurcation with frequency pulling, if the forcing and natural frequencies are close together, or a torus-death bifurcation without frequency pulling, but with a gradual suppression of the natural mode, if the two frequencies are far apart. We also find that the jet locks in most readily when forced close to its natural frequency, but that the details contain two asymmetries: the jet (i) locks in more readily and (ii) oscillates more strongly when it is forced below its natural frequency than when it is forced above it. Except for the second asymmetry, all of these transitions, bifurcations and dynamics are accurately reproduced by the forced van der Pol oscillator. This shows that this complex (infinite-dimensional) forced self-excited jet can be modelled reasonably well as a simple (three-dimensional) forced self-excited oscillator. This result adds to the growing evidence that open self-excited flows behave essentially like low-dimensional nonlinear dynamical systems. It also strengthens the universality of such flows, raising the possibility that more of them, including some industrially relevant flames, can be similarly modelled. © 2013 Cambridge University Press.
Power Law Dependence of Field-Effect Mobility in Amorphous Oxide Semiconductor Thin Film Transistors