Moment Tensor Analysis of the Acoustic Emission Source in the Rock Damage Process

To further investigate the mechanism of acoustic emission (AE) in the rock fracture experiment, moment tensor analysis was carried out. The AE sources characterized by crack sizes, orientations and fracture modes, are represented by a time-dependent momen

Models for acoustic propagation through turbofan exhaust flows-lined ducts

Turbomachinery noise radiating into the rearward arc is an important problem. This noise is scattered by the trailing edges of the nacelle and the jet exhaust, and interacts with the shear layers between the external flow, bypass stream and jet, en route to the far field. In the past a range of relevant model problems involving semi-infinite cylinders have been solved. However, one limitation of these previous solutions is that they do not allow for the jet nozzle protruding a finite distance beyond the end of the nacelle (or in certain configurations being buried a finite distance upstream). With this in mind, we have used the matrix Wiener-Hopf technique to allow precisely this finite nacelle-jet nozzle separation to be included. We have previously reported results for the case of hard-walled ducts, which requires factorisation of a 2 × 2 matrix. In this paper we extend this work by allowing one of the duct walls, in this case the outer wall of the jet pipe, to be acoustically lined. This results in the need to factorise a 3 × 3 matrix, which is completed by use of a combination of pole-removal and Pad́e approximant techniques. Sample results are presented, investigating in particular the effects of exit plane stagger and liner impedance. Here we take the mean flow to be zero, but extension to nonzero Mach numbers in the core and bypass flow has also been completed. Copyright © 2009 by Nigel Peake & Ben Veitch.

ZnO film based surface acoustic wave micro-pump

In this study, a micro-pump unit based on surface acoustic wave (SAW) on piezoelectric ZnO film is designed and fabricated as a micro-fluidic device. It employs a mechanical wave, which is generated electrically using an aluminum interdigital transducer (IDT), and propagates on the surface of the ZnO film. The ZnO film was used in this study because it has a high electromechanical coefficient and an excellent bonding with various substrate materials, in particular silicon. The sputtering parameters for ZnO film deposition have been optimized, and the ZnO films with different thickness from 1 micron to 5.5 microns were prepared. The film properties have been characterized using different methods, such as scanning electron microscopy, X-ray diffraction and atomic force microscopy. Aluminum IDT with a finger width and spacing of 8 microns was patterned on the ZnO film using a lift-off process. The frequency generated was measured using a network analyzer, and it varies from 130 MHz to 180 MHz as a function of film thickness. A signal generator was used to generate the frequency with a power amplifier to amplify the signal, which was then applied to aluminum IDT to generate the surface acoustic wave. If a liquid droplet exists on the surface carrying the acoustic wave, the energy and the momentum of the SAW will be coupled into the fluid, causing the liquid to vibrate and move on film surface. The strength of this movement is determined by the applied voltage and frequency. The volume of the liquid drop loaded on the SAW device in this study is of several hundreds of nanoliters. The movement of the liquid inside the droplet and also on the ZnO film surface can be demonstrated. The performance of ZnO SAW device was characterized as a function of film thickness. © 2007 IOP Publishing Ltd.

ZnO films for surface acoustic wave microfluidic devices

SAW devices were fabricated on c-axis oriented ZnO films grown on Si substrates. Effects of film thickness on the film microstructure and acoustic frequencies were studied. Both Rayleigh and Sezawa mode waves were detected on the devices, and their resonant frequencies were found to decrease with increase in film thickness.

ZnO films for surface acoustic wave microfluidic devices

SAW devices were fabricated on c-axis oriented ZnO films grown on Si substrates. Effects of film thickness on the film microstructure and acoustic frequencies were studied. Both Rayleigh and Sezawa mode waves were detected on the devices, and their resonant frequencies were found to decrease with increase in film thickness.

A bulk acoustic mode single-crystal silicon microresonator with a high-quality factor

This paper details a bulk acoustic mode resonator fabricated in single-crystal silicon with a quality factor of 15 000 in air, and over a million below 10 mTorr at a resonant frequency of 2.18 MHz. The resonator is a square plate that is excited in the square-extensional mode and has been fabricated in a commercial foundry silicon-on-insulator (SOI) MEMS process through MEMSCAP. This paper also presents a simple method of extracting resonator parameters from raw measurements heavily buried in electrical feedthrough. Its accuracy has been demonstrated through a comparison between extracted motional resistance values measured at different voltage biases and those predicted from an analytical model. Finally, a method of substantially cancelling electrical feedthrough through system-level electronic implementation is also introduced. © 2008 IOP Publishing Ltd.

Ultrasensitive mass balance based on a bulk acoustic mode single-crystal silicon resonator

A single-crystal silicon resonant bulk acoustic mass sensor with a measured resolution of 125 pg cm2 is presented. The mass sensor comprises a micromachined silicon plate that is excited in the square-extensional bulk acoustic resonant mode at a frequency of 2.182 MHz, with a quality factor exceeding 106. The mass sensor has a measured mass to frequency shift sensitivity of 132 Hz cm2 μg. The resonator element is embedded in a feedback loop of an electronic amplifier to implement an oscillator with a short term frequency stability of better than 7 ppb at an operating pressure of 3.8 mTorr. © 2007 American Institute of Physics.

A surface acoustic wave-based immunosensing device using a nanocrystalline ZnO film on Si

The novelty of this study resides in the fabrication of a bio-sensing device, based on the surface acoustic wave (SAW) on a nanocrystalline ZnO film. The ZnO film was deposited using an rf magnetron sputtering at room temperature on silicon. The deposited films showed the c-axisoriented crystallite with grain size of ∼40 nm. The immunosensing device was fabricated using photolithographic protocols on the film. As a model biomolecular recognition and immunosensing, biospecific interaction between a 6-(2,4-dinitrophenyl) aminohexanoic acid (DNP) antigen and its antibody was employed, demonstrating the shifts of resonant frequencies on SAW immunosensing device. The device exhibited a linearity as a function of the antibody concentration in the range of 20∼20,000 ng/ml. © 2009 American Scientific Publishers. All rights reserved.

Binary excitation of a high-Q bulk acoustic microresonator by actuation polarity inversion

We present a technique for independently exciting two resonant modes of vibration in a single-crystal silicon bulk mode microresonator using the same electrode configuration through control of the polarity of the DC actuation voltage. Applications of this technique may include built-in temperature compensation by the simultaneous selective excitation of two closely spaced modes that may have different temperature coefficients of resonant frequency. The technique is simple and requires minimum circuit overhead for implementation. The technique is implemented on square plate resonators with quality factors as high as 3.06 × 106. Copyright © 2008 by ASME.

Thin film monitoring with silicon bulk acoustic resonators

Abstract-This paper reports a single-crystal silicon mass sensor based on a square-plate resonant structure excited in the wine glass bulk acoustic mode at a resonant frequency of 2.065 MHz and an impressive quality factor of 4 million at 12 mtorr pressure. Mass loading on the resonator results in a linear downshift in the resonant frequency of this device, wherein the measured sensitivity is found to be 175 Hz cm2/μg. The silicon resonator is embedded in an oscillator feedback loop, which has a short-term frequency stability of 3 mHz (approximately 1.5 ppb) at an operating pressure of 3.2 mtorr, corresponding to an equivalent mass noise floor of 17 pg/cm2. Possible applications of this device include thin film monitoring and gas sensing, with the potential added benefits of scalability and integration with CMOS technology. © 2008 IEEE.