Recycling of silicon carbide and corn starch as binder originating from commercial starch consolidation

The main goal of this work is to demonstrate that the use of recycled material originated from SiC ceramics is viable. These ceramics were produced by commercial starch consolidation process. Before calcination stage, surplus of these materials always appears. This surplus is rich in SiC and starch. Samples were made by material previously milled in automatic mortar and sieved (100 Tyler). Later, 10% of distilled water was added to the material and the mixture was pressed at 40 MPa. In order to characterize the ceramic, three point flexural test were made, according to the ASTM C1161/94 norm. The results were analyzed by Weibull statistical method. Apparent density and porosity measures also were made, according to ASTM C20/87 norm. A verification of the surface was made in the fracture area by the depth from focus method and SEM image analysis. The results showed that the recycling process is fully viable, being a good economic option and reduce possible pollutant effect to the environment.

Comparative study on turning CI and CGI using silicon nitride cutting tools

There has been a great interest for improving the machining of cast iron materials in the automotive and other industries. Comparative studies for tool used to machine grey cast iron (CI) and compacted graphite iron (CGI) on dry machining were also performed in order to find out why in this case the tool lifetime is not significantly higher. However the machining these materials while considering turning with the traditional high-speed steel and carbide cutting tools present any disadvantages. One of these disadvantages is that all the traditional machining processes involve the cooling fluid to remove the heat generated on workpiece due to friction during cutting. This paper present a new generation of ceramic cutting tool exhibiting improved properties and important advances in machining CI and CGI. The tool performance was analyzed in function of flank wear, temperature and roughness, while can be observed that main effects were found for tool wear, were abrasion to CI and inter-diffusion of constituting elements between tool and CGI, causing crater. However the difference in tool lifetime can be explained by the formation of a MnS layer on the tool surface in the case of grey CI. This layer is missing in the case of CGI.

Properties advanced of the silicon nitride based ceramics and recent performance on automotive parts manufacture by machining process: Advanced Ceramics, demand Forecast

Automotive parts manufacture by machining process using silicon nitride-based ceramic tool development in Brazil already is a reality. Si 3N4-based ceramic cutting tools offer a high productivity due to their excellent hot hardness, which allows high cutting speeds. Under such conditions the cutting tool must be resistant to a combination of mechanical, thermal and chemical attacks. Silicon nitride based ceramic materials constitute a mature technology with a very broad base of current and potential applications. The best opportunities for Si3N 4-based ceramics include ballistic armor, composite automotive brakes, diesel particulate filters, joint replacement products and others. The goal of this work was to show latter advance in silicon nitride manufacture and its recent evolution on machining process of gray cast iron, compacted graphite iron and Ti-6Al-4V. Materials characterization and machining tests were analyzed by X-Ray Diffraction, Scanning Electron Microscopy, Vickers hardness and toughness fracture and technical norm. In recent works the authors has been proved to advance in microstructural, mechanical and physic properties control. These facts prove that silicon nitride-based ceramic has enough resistance to withstand the impacts inherent to the machining of gray cast iron (CI), compacted graphite iron (CGI) and Ti-6Al-4V (6-4). Copyright © 2008 SAE International.

Alignment of the CMS silicon tracker during commissioning with cosmic rays

The CMS silicon tracker, consisting of 1440 silicon pixel and 15 148 silicon strip detector modules, has been aligned using more than three million cosmic ray charged particles, with additional information from optical surveys. The positions of the modules were determined with respect to cosmic ray trajectories to an average precision of 3-4 microns RMS in the barrel and 3-14 microns RMS in the endcap in the most sensitive coordinate. The results have been validated by several studies, including laser beam cross-checks, track fit self-consistency, track residuals in overlapping module regions, and track parameter resolution, and are compared with predictions obtained from simulation. Correlated systematic effects have been investigated. The track parameter resolutions obtained with this alignment are close to the design performance. © 2010 IOP Publishing Ltd and SISSA.

Development of silicon carbide substrates for aerospace applications

Payload and high-tech are important characteristics when the goals are aerospace applications. The development of the technologies associated to these applications has interests that transcend national boundaries and are of strategic importance to the nations. Ultra lightweight mirrors, supports and structures for optical systems are important part of this subject. This paper reports the development of SiC substrates, obtained by pressing, to be applied on embedded precision reflective optics. Different SiC granulometries, having YAG as sintering additive, were processed by: ball milling, drying and deagglomeration, sift, uniaxial and isostatic pressing, and, finally, argon atmosphere sintering at 1900°C. Different porosities were obtained according to the amount of organic material added. Into one side of the samples pellets of organic material were introduced to generate voids to reduce the weight of samples as a whole. The substrates were grinding and polished, looking for a SiC surface having low porosity, as porosity is directly related to light scattering that should be avoided on optical surfaces. Laser surface treatments were applied (using or not SiC barbotine) as a method to improve the surface quality. The samples were characterized by optical and laser confocal microscopy, roughness measurements and mechanical tests. The results are very promissory for future applications. © 2012 Materials Research Society.

Effects of soil and foliar application of soluble silicon on mineral nutrition, gas exchange, and growth of potato plants

Silicon can alleviate biotic and abiotic stresses in several crops, and it has beneficial effects on plants under nonstressed conditions. However, there is still doubt about foliar-applied Si efficiency and Si effects on mineral nutrition, physiological processes, and growth of potato (Solanum tuberosum L.) plants under wellwatered conditions. The objective of this study was to evaluate the effect of soil and foliar application of soluble Si on Si accumulation, nutrients, and pigments concentration as well as gas exchange and growth of potato plants. The experiment was conducted under greenhouse conditions in pots containing 35 dm3 of a Typic Acrortox soil. The treatments consisted of a control (no Si application), soil application of soluble Si (50 mg dm-3 Si), and foliar application of soluble Si (three sprays of 1.425 mM Si water solution, prepared with a soluble concentrate stabilized silicic acid), with eight replications. Both soil and foliar application of Si resulted in higher Si accumulation in the whole plant. Foliar application of Si resulted in the greatest Si concentration in leaves, and soil application increased Si concentration in leaves, stems, and roots. Silicon application, regardless of the application method, increased leaf area, specific leaf area, and pigment concentration (chlorophyll a and carotenoids) as well as photosynthesis and transpiration rates of wellwatered potato plants. However, only soil application increased P concentration in leaves and dry weight of leaves and stems. © Crop Science Society of America.

Silicon in plant disease control

All essential nutrients can affect the incidence and severity of plant diseases. Although silicon (Si) is not considered as an essential nutrient for plants, it stands out for its potential to decrease disease intensity in many crops. The mechanism of Si action in plant resistance is still unclear. Si deposition in plant cell walls raised the hypothesis of a possible physical barrier to pathogen penetration. However, the increased activity of phenolic compounds, polyphenol oxidases and peroxidases in plants treated with Si demonstrates the involvement of this element in the induction of plant defense responses. The studies examined in this review address the role of Si in disease control and the possible mechanisms involved in the mode of Si action in disease resistance in plants.

Síntese de nanofios de óxidos semicondutores para aplicações em dispositivos ópticos e eletrônicos

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Synthesis and characterization of zeolite NaP using kaolin waste as a source of silicon and aluminum

The synthesis of zeolite NaP using kaolin waste, from the Amazon region, as a predominant source of silicon and aluminum has been studied. The zeolitisation process occurred in hydrothermal conditions using static autoclaving and the effects of time, temperature, and the Si/Al ratio were investigated. The starting material and the phases formed as reaction products were characterized by XRD, SEM and FTIR. The results showed that pure zeolite NaP is hydrothermally synthesized, at 100 °C for 20 hours, using metakaolin waste material in alkaline medium in presence of additional silica. The XRD and SEM analyses indicate that the synthesized zeolite presents good crystallinity.

Cycling of nutrients and silicon in pigeonpea and pearl millet monoculture and intercropping

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of argon ion bombardment on amorphous silicon carbonitride films

Amorphous silicon carbonitride (a-SiCN:H) films were synthesized by radiofrequency (RF) Plasma Enhanced Vapor Chemical Deposition (PECVD) using hexamethyldisilazane (HMDSN) as precursor compound. Then, the films were post-treated by Plasma Immersion Ion Implantation (PIII) in argon atmosphere from 15 to 60 min The hardness of the film enhanced after ion implantation, and the sample treated at 45 min process showed hardness greater than sixfold that of the untreated sample. This result is explained by the crosslinking and densification of the structure Films were exposed to oxygen plasma for determining of the etching rate. It decreased monotonically from 33 angstrom/min to 19 angstrom/min for the range of process time, confirming structural alterations. Hydrophobic character of the a-SiCN:H films were modified immediately after ion bombardment, due to incorporation of polar groups. However, the high wettability of the films acquired by the ion implantation was diminished after aging in air. Therefore, argon PIII made a-SiCN.H films mechanically more resistant and altered their hydrophobic character.

Study of magnetic field enhanced plasma immersion ion implantation in Silicon

A comparison between experimental measurements and numerical calculations of the ion current distribution in plasma immersion ion implantation (PIII) with external magnetic field is presented. Later, Silicon samples were implanted with nitrogen ion to analyze the effect on them. The magnetic field considered is essentially non-uniform and is generated by two magnetic coils installed on vacuum chamber. The presence of both, electric and magnetic field in PIII create a crossed ExB field system, promoting drift velocity of the plasma around the target. The results found shows that magnetized electrons drifting in ExB field provide electron-neutral collision. The efficient ionization increases the plasma density around the target where a magnetic confinement is formed. As result, the ion current density increases, promoting significant changes in the samples surface properties, especially in the surface wettability.

Bonding of facial silicon with nanoparticles to an acrylic resin substrate

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Laser stimulated piezoelectricity in Er3+ doped GeO2-Bi2O3 glasses containing silicon nanocrystals

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Amorphous silicon carbonitride films modified by plasma immersion ion implantation

Amorphous silicon carbonitride (a-SiCN:H) films were deposited from hexamethyldisilazane (HMDSN) organic compounds via radio-frequency (RF) glow discharges. Afterwards the films were bombarded, from 15 to 60 min, with nitrogen ions using Plasma Immersion Ion Implantation (PIII) technique. X-ray photoelectron spectroscopy (XPS) showed that O-containing groups increased, while C-C and/or C-H groups decreased with treatment time. This result indicates chemical alterations of the polymeric films with the introduction of polar groups on the surface, which changes the surface wettability. In fact, the hydrophobic nature of a-SiCN:H films (contact angle of 100 degrees) was changed by nitrogen ion implantation and, and after aging in atmosphere air, all samples preserved the hydrophilic character (contact angle <80 degrees) independently of treatment time. The exposure of the films to oxygen plasma was performed to evaluate the etching rate, which dropped from 24% to 6% while the implantation time increased from 15 to 60 min. This data suggests that Pill increased the film structure strength, probably due to crosslinking enhancement of polymeric chains. Therefore, the treatment with nitrogen ions via Pill process was effective to modify the wettability and oxidation resistance of a-SiCN:H films. (C) 2014 Elsevier Ltd. All rights reserved.