Boundary conditions in physical model tests-the influence of deck pinning on the response of piled bridge abutments in laterally spreading soils

Physical models are widely used in the study of geotechnical earthquake engineering phenomena, and the comparison of modelling results to observations from field reconnaissance provides a transparent means of evaluating the design of our physical models. This paper compares centrifuge tests of pile groups in laterally spreading slopes with the response of piled bridge abutments in the 2011 Christchurch earthquake. We show that the model foundation's fixity conditions strongly affect the success with which the mechanism of response of the real abutments is replicated in the tests. © 2012 American Society of Civil Engineers.

Effect of pile spacing on pile demand for small pile groups in laterally spreading soil

Liquefaction-induced lateral spreading has been responsible for widespread damage to pile foundations in many large earthquakes. The specification of inertial and kinematic pile and pile cap demands is a particularly challenging aspect of the analysis of pile foundations in laterally spreading soils. This paper presents and examines the results from a pair of dynamic centrifuge tests focusing on pile and pile cap demands for small pile groups with different pile spacings. Inertial and kinematic pile cap forces and lateral pile group interaction are examined with regard to the overturning mechanism that dominated the pile group response. © 2014 Taylor & Francis Group.

Lateral spreading-induced abutment rotation in the 2011 Christchurch earthquake: Observations and analysis

A series of strong earthquakes near Christchurch, New Zealand, occurred between September 2010 and December 2011, causing widespread liquefaction throughout the city's suburbs. Lateral spreading developed along the city's Avon River, damaging many of the bridges east of the city centre. The short-to medium-span bridges exhibited a similar pattern of deformation, involving back-rotation of their abutments and compression of their decks. By explicitly considering the rotational equilibrium of the abutments about their point of contact with the rigid bridge decks, it is shown that relatively small kinematic demands from the laterally spreading backfill soil are needed to initiate pile yielding, and that this mode of deformation should be taken into account in the design of the abutments and abutment piles.

GaAs/AlGaAs MQW材料激子吸收谱的电场效应及pin结构自电光效应器件（SEED)的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

SEED器件及智能象元研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

64×64 InGaAs/GaAs多量子阱SEED光子集成智能像素面阵研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Analysis of lateral current spreading in solar cell devices by spatially-resolved electroluminescence

Spatially-resolved electroluminescence (EL) images from solar cells contain information of local current distribution. By theoretical analysis of the EL intensity distribution, the current density distribution under a certain current bias and the sheet resistance can be obtained quantitatively. Two-dimensional numerical simulation of the current density distribution is employed to a GaInP cell, which agrees very well with the experimental results. A reciprocity theorem for current spreading is found and used to interpret the EL images from the viewpoint of current extraction. The optimization of front electrodes is discussed based on the results. (C) 2010 American Institute of Physics. [doi:10.1063/1.3431390]

The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

High-quality Ge epilayer on Si(1 0 0) substrate with an inserted low-temperature Ge seed layer and a thin Si0.77Ge0.23 layer was grown by ultrahigh vacuum chemical vapor deposition. The epitaxial Ge layer with surface root-mean-square roughness of 0.7 nm and threading dislocation density of 5 x 10(5) cm(-2) was obtained. The influence of low temperature Ge seed layer on the quality of Ge epilayer was investigated. We demonstrated that the relatively higher temperature (350 degrees C) for the growth of Ge seed layer significantly improved the crystal quality and the Hall hole mobility of the Ge epilayer. (C) 2008 Elsevier B.V. All rights reserved.