Wavelength conversion using semiconductor optical amplifiers

This paper reports a detailed theoretical study of the dynamics of wavelength conversion using cross-gain and cross-phase modulation in semiconductor optical amplifiers (SOA's) involving a large signal, multisection rate equation model. Using this model, recently reported experimental results have been correctly predicted and the effects of electrical and optical pumping on the conversion speed, modulation index, and phase variation of the converted signal have been considered. The model predicts, in agreement with experimental data, that recovery rates as low as 12 ps are possible if signal and pump powers in excess of 14 dBm are used. It also indicates that conversion speeds up to 40 Gb/s may be achieved with less than 3 dB dynamic penalty. The employment of cross-phase modulation increases the speed allowing, for example, an improvement to 60 Gb/s with an excess loss penalty less than 1 dB.

Microwave signal transmission over a directly-modulated radio-over-fiber link using cascaded semiconductor optical amplifiers

We demonstrate a record 150km transmission of microwave signals by a directly-modulated radio-over-fiber link with a bit-error-rate of less than 10-12. Cascaded semiconductor optical amplifiers are employed in this link to extend the transmission link length. © 2005 Optical Society of America.

A novel scalable photonic analog switch architecture based on semiconductor optical amplifiers

We propose a novel semiconductor optical amplifier (SOA) based switch architecture for analog applications. Proof-of-principle experiments show that the system is very linear with an SFDR of approximately 100dB·Hz 2/3 for a switching time of 50μs. The port number of this switch is scalable and can be expanded to 80 × 80.

Trapped charge dynamics in a sol-gel based TiO(2) high- k gate dielectric silicon metal-oxide-semiconductor field effect transistor.

We have studied the response of a sol-gel based TiO(2), high k dielectric field effect transistor structure to microwave radiation. Under fixed bias conditions the transistor shows frequency dependent current fluctuations when exposed to continuous wave microwave radiation. Some of these fluctuations take the form of high Q resonances. The time dependent characteristics of these responses were studied by modulating the microwaves with a pulse signal. The measurements show that there is a shift in the centre frequency of these high Q resonances when the pulse time is varied. The measured lifetime of these resonances is high enough to be useful for non-classical information processing.