Blue-phase templated fabrication of three-dimensional nanostructures for photonic applications

A promising approach to the fabrication of materials with nanoscale features is the transfer of liquid-crystalline structure to polymers. However, this has not been achieved in systems with full three-dimensional periodicity. Here we demonstrate the fabrication of self-assembled three-dimensional nanostructures by polymer templating blue phase I, a chiral liquid crystal with cubic symmetry. Blue phase I was photopolymerized and the remaining liquid crystal removed to create a porous free-standing cast, which retains the chiral three-dimensional structure of the blue phase, yet contains no chiral additive molecules. The cast may in turn be used as a hard template for the fabrication of new materials. By refilling the cast with an achiral nematic liquid crystal, we created templated blue phases that have unprecedented thermal stability in the range-125 to 125°C, and that act as both mirrorless lasers and switchable electro-optic devices. Blue-phase templated materials will facilitate advances in device architectures for photonics applications in particular. © 2012 Macmillan Publishers Limited. All rights reserved.

Light-matter interaction in a microcavity-controlled graphene transistor

Graphene has extraordinary electronic and optical properties and holds great promise for applications in photonics and optoelectronics. Demonstrations including high-speed photodetectors, optical modulators, plasmonic devices, and ultrafast lasers have now been reported. More advanced device concepts would involve photonic elements such as cavities to control light-matter interaction in graphene. Here we report the first monolithic integration of a graphene transistor and a planar, optical microcavity. We find that the microcavity-induced optical confinement controls the efficiency and spectral selection of photocurrent generation in the integrated graphene device. A twenty-fold enhancement of photocurrent is demonstrated. The optical cavity also determines the spectral properties of the electrically excited thermal radiation of graphene. Most interestingly, we find that the cavity confinement modifies the electrical transport characteristics of the integrated graphene transistor. Our experimental approach opens up a route towards cavity-quantum electrodynamics on the nanometre scale with graphene as a current-carrying intra-cavity medium of atomic thickness. © 2012 Macmillan Publishers Limited. All rights reserved.

Negative index photonic crystal lenses based on carbon nanotube arrays

We report a novel utilization of periodic arrays of carbon nanotubes in the realization of diffractive photonic crystal lenses. Carbon nanotube arrays with nanoscale dimensions (lattice constant 400 nm and tube radius 50 nm) displayed a negative refractive index in the optical regime where the wavelength is of the order of array spacing. A detailed computational analysis of band gaps and optical transmission through the nanotubes based planar, convex and concave shaped lenses was performed. Due to the negative-index these lenses behaved in an opposite fashion compared to their conventional counter parts. A plano-concave lens was established and numerically tested, displaying ultra-small focal length of 1.5 μm (∼2.3 λ) and a near diffraction-limited spot size of 400 nm (∼0.61 λ). © 2012 Elsevier B.V. All rights reserved.

Indirect modulation of a terahertz quantum cascade laser using gate tunable graphene

We bring together two areas of terahertz (THz) technology that have benefited from recent advancements in research, i.e., graphene, a material that has plasmonic resonances in the THz frequency, and quantum cascade lasers (QCLs), a compact electrically driven unipolar source of THz radiation. We demonstrate the use of single-layer large-area graphene to indirectly modulate a THz QCL operating at 2.0 THz. By tuning the Fermi level of the graphene via a capacitively coupled backgate voltage, the optical conductivity and, hence, the THz transmission can be varied. We show that, by changing the pulsing frequency of the backgate, the THz transmission can be altered. We also show that, by varying the pulsing frequency of the backgate from tens of Hz to a few kHz, the amplitude-modulated THz signal can be switched by 15% from a low state to a high state. © 2009-2012 IEEE.

All optical degenerate mode-group multiplexing using a Mode Selective Switch

A Mode Selective Switch based around an LCoS Spatial Light Modulator is demonstrated to optically demultiplex modes with the same propagation constants to the same output fibres, using a common phase mask for all channels. © 2012 IEEE.

Mode division multiplexing over 2km of OM2 fibre using rotationally optimized mode excitation with fibre coupler demultiplexer

A Spatial Light Modulator and a non-specialized multimode coupler are used together to provide sufficient channel isolation and modal bandwidth for 2x12.5Gbps NRZ over 2km of standard graded-index multimode fibre without DSP. © 2012 IEEE.

Mode division multiplexing of modes with the same azimuthal index

The design of an SLM-based mode demultiplexer is discussed and mode division multiplexing is performed using the LP0,1 and LP 0,2 modes, representing the first demonstration to propagate channels on modes with the same azimuthal index. Mode multiplexed transmission over 2 km of 50-μm OM2 fiber demonstrates a modal selectivity of 16 dB and an OSNR penalty of 1.5 dB for the transmission of 2×56 Gb/s QPSK signals. © 2012 IEEE.

Mixed Wireless Communications and RFID Sensor Networks over Fibre

A second harmonic suppression scheme allowing RoF links to support communications and passive UHF RFID is reviewed. Using RoF distributed antenna system techniques, the coverage and location accuracy of passive UHF RFID are significantly improved.

Pulsewidth switchable, wavelength tuneable ultrafast fiber laser mode-locked by carbon nanotubes

Employing a nanotube-based saturable absorber, we demonstrate a continuously tunable (1533-1563nm) ultrafast fiber laser, with output pulsewidth switchable between picosecond (1.2 ps) and femtosecond (610 fs) regimes. © 2012 IEEE.

Ultrashort pulse generation in diode laser devices

The generation of ultrashort optical pulses by semiconductor lasers has been extensively studied for many years. A number of methods, including gain-/Q-switching and different types of mode locking, have been exploited for the generation of picosecond and sub-picosecond pulses [1]. However, the shortest pulses produced by diode lasers are still much longer and weaker than those that are generated by advanced mode-locked solid-state laser systems [2]. On the other hand, an interesting class of devices based on superradiant emission from multiple contact diode laser structures has also been recently reported [3]. Superradiance (SR) is a transient quantum optics phenomenon based on the cooperative radiative recombination of a large number of oscillators, including atoms, molecules, e-h pairs, etc. SR in semiconductors can be used for the study of fundamental properties of e-h ensembles such as photon-mediated pairing, non-equilibrium e-h condensation, BSC-like coherent states and related phenomena. Due to the intrinsic parameters of semiconductor media, SR emission typically results in the generation of a high-power optical pulse or pulse train, where the pulse duration can be much less than 1 ps, under optimised bias conditions. Advantages of this technique over mode locking in semiconductor laser structures include potentially shorter pulsewidths and much larger peak powers. Moreover, the pulse repetition rate of mode-locked pulses is fixed by the cavity round trip time, whereas the repetition rate of SR pulses is controlled by the current bias and can be varied over a wide range. © 2012 IEEE.

Dual-wavelength, carbon nanotube mode-locked fiber laser

We demonstrate a dual-wavelength, carbon nanotube mode-locked Er fiber laser. The laser outputs two wavelengths at 1549nm and 1562nm, and each wavelength corresponds to pulse duration of ∼1.3ps and repetition rate of ∼11.27MHz. © 2012 IEEE.

Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300-1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow (Δλ=0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.