Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.

Optical and structural properties of Er2O3 films grown by magnetron sputtering

The structural properties and the room temperature luminescence of Er 2O3 thin films deposited by magnetron sputtering have been studied. In spite of the well-known high reactivity of rare earth oxides towards silicon, films characterized by good morphological properties have been obtained by using a SiO2 interlayer between the film and the silicon substrate. The evolution of the properties of the Er2O3 films due to thermal annealing processes in oxygen ambient performed at temperatures in the range of 800-1200°C has been investigated in detail. The existence of well defined annealing conditions (rapid treatments at a temperature of 1100°C or higher) allowing to avoid the occurrence of extensive chemical reactions with the oxidized substrate has been demonstrated; under these conditions, the thermal process has a beneficial effect on both structural and optical properties of the film, and an increase of the photoluminescence (PL) intensity by about a factor of 40 with respect to the as-deposited material has been observed. The enhanced efficiency of the photon emission process has been correlated with the longer lifetime of the PL signal. Finally, the conditions leading to a reaction of Er2O3 with the substrate have been also identified, and evidences about the formation of silicate-like phases have been collected. © 2006 American Institute of Physics.

100 Gigabit Ethernet transmission enabled by carrierless amplitude and phase modulation using QAM receivers

Simulations have investigated single laser 100G Ethernet links enabled by CAP-16 using QAM receivers that not only lower significantly system timing jitter sensitivity but also outperform PAM and standard CAP in terms of power margin. © 2013 OSA.

100 Gb/s uncooled WDM system using conventional WDM components and advanced receiver signal processing

We demonstrate an uncooled WDM system using standard WDM components and receiver signal processing, with a different number of receivers to transmitters, to allow wide temperature drift of the transmitter lasers. A 100 Gb/s 8-wavelength demonstrator has been developed, which proves the feasibility of the approach over 25 km of SMF. © 2012 OSA.

Generation of picosecond pulses with a repetition frequency of 100 GHz by a multicomponent injection laser

A mode for generating a sequence of spectrally limited pulses with a duration of 2 nsec and a repetition frequency of approximately 100 GHz in AlGaAs/GaAs by an injection heterolaser, which has amplifying and absorbing parts combined in a common resonator, is discussed.

Generation of bandwidth-limited 2 ps pulses with 100 GHz repetition rate from multisegmented injection laser

A new dynamic regime in a multisegmented AlGaAs/GaAs DH injection laser has been realised. Generation of bandwidth-limited 100 GHz repetition rate pulses has been demonstrated. This value is claimed to be the largest ever reported for an ultrashort pulse repetition frequency obtained directly from a laser.

High bit rate quantum key distribution with 100 dB security

We report the operation of a gigahertz clocked quantum key distribution system featuring high composable and quantifiable security while maintaining more than 1 Mbit/s secure key rate over a 50 km quantum channel. © OSA 2013.

100 Gigabit ethernet transmission enabled by carrierless amplitude and phase modulation using QAM receivers

Simulations have investigated single laser 100G Ethernet links enabled by CAP-16 using QAM receivers that not only lower significantly system timing jitter sensitivity but also outperform PAM and standard CAP in terms of power margin. © 2013 OSA.

Comparison of 100 Gb/s Ethernet links using PAM-8, multi-pulse, and hybrid CAP-16/QAM-16 modulation schemes

A theoretical study compares 100 Gb/s Ethernet links and finds that multi-pulse and hybrid CAP-16/QAM-16 (PAM-8) schemes support transmission over 10 km (2 km) SMF. Multi-pulse and CAP-16/QAM-16 need 2× the number of arithmetic operations and 7× or 3× the number of filter taps respectively but exhibit reduced power dissipation compared with PAM-8.

100 Gb/s uncooled WDM system using conventional WDM components and advanced receiver signal processing

We demonstrate an uncooled WDM system using standard WDM components and receiver signal processing, with a different number of receivers to transmitters, to allow wide temperature drift of the transmitter lasers. A 100 Gb/s 8-wavelength demonstrator has been developed, which proves the feasibility of the approach over 25 km of SMF. © 2012 Optical Society of America.

Zingiber officinalis an herbal appetizer in the tiger shrimp Penaeus monodon (Fabricius) larviculture

Penaeus monodon postlarvae were fed with different percentages (0%, 25%, 50%, 75% and 100%) of the herbal appetizer Zingiber officinalis enriched Artemia. After 30 days of culture (i.e. PL-1-30), a very positive result was found in Z. officinalis-enriched Artemia-fed postlarvae. The unenriched Artemia-fed postlarvae consumed 91.0 mg/animal/30 days of feed, whereas the Z. officinalis-enriched Artemia increased their consumption to 127.9 mg/animal/30 days. A similar pattern was noticed in feed absorbed (110.2 mg), dry weight growth (26.7 mg) and feed catabolized (83.2 mg) in Z. officinalis-enriched Artemia because of enzymatic activities. The conversion efficiency of unenriched postlarva was 17.19%, whereas in 100% Z. officinalis-enriched Artemia, the maximum conversion efficiency was 20.85%. The net production efficiency increased significantly (P < 0.05) to 22% from that of the unenriched Artemia-fed postlarvae. The administration of Z. officinalis in all levels produced significantly (P < 0.05) higher weight gain and specific growth rate. The utilization efficiency of feed increased proportionately to the percentages of Z. officinalis. Digestive enzyme activity (amylase, protease and lipase) increased significantly (P < 0.05) in the 50%, 75% and 100% enrichment. Among the different percentages of enrichment, the 100% Z. officinalis-enriched Artemia-fed postlarvae performed better in the overall status.

100 Gb/s uncooled DWDM using orthogonal coding for low-cost datacommunication links

We demonstrate a 10 x 10 Gb/s uncooled DWDM system using orthogonal coding on adjacent carriers, assuming the use of a monolithically integrated sources. A power saving of 72% is expected over traditional WDM. © 2014 OSA.