A Novel beta-Glucosidase from Sporidiobolus pararoseus: Characterization and Application in Winemaking

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Nanopore size growth and ultrafiltration performance of SnO2 ceramic membranes prepared by sol-gel route

Supported ceramic membranes have been produced by the sol-casting procedure from aqueous colloidal suspensions prepared by the sol-gel route. Coatings on a tubular alumina support have been successfully performed leading to crack free layers. Samples have been sintered at 400, 500 and 600 degreesC, and the effect of heating treatment on the nanostructure and on the ultrafiltration properties are analyzed. The characterization has been done by high resolution scanning electron microscopy, nitrogen adsorption-desorption isotherms, water permeation and cut-off determination using polyethylene glycol standard solutions. The micrographs have revealed that grains and pore size increase with the temperature, whereas their shape remains invariant. This results is in agreements with N-2 adsorption-desorption analyses, which have revealed that the mean pore size diameter increases from 4 to 10 nm as the sintering temperature increases from 400 to 600 degreesC, while the total porosity remains constant. Furthermore, the tortuosity, calculated from water permeability, is essentially invariant with the sintering temperatures. The membranes cut-off, determined with a retention rate equal to 95%, are 3500, 6500 and 9000 g . mol(-1) for 400, 500 and 600 degreesC, respectively, showing that the permeation properties of SnO2 ultrafiltration membranes can easily be controlled by sintering condition.

Dimorphic cypsela germination and plant growth in Synedrella nodiflora (L.) Gaertn. (Asteraceae)

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Note on the germination of Vochysia tucanorum seeds treated with growth regulators

(Nota sobre a germinação de sementes de Vochysia tucanorum tratadas com reguladores vegetais). O objetivo deste trabalho foi avaliar a resposta germinativa sob luz branca e escuro de sementes de Vochysia tucanorum Mart. tratadas com GA3 e CEPA. Sementes recém-coletadas de uma área de Cerrado foram armazenadas durante 14 dias em duas temperaturas (25 ± 2 °C e 7 ± 1 °C). Após o período de armazenamento, as sementes foram pré-tratadas com água destilada (controle), ácido giberélico (GA3), ácido 2-cloroetilfosfônico (CEPA) e uma mistura de GA3 + CEPA; em seguida, as sementes foram semeadas em placas de Petri sobre papel filtro umedecido com água destilada e colocadas para germinar em escuro e sob luz branca. Os resultados sugerem que as sementes não são fotoblásticas nem dormentes, no entanto um comportamento fotoblástico emerge quando as sementes foram previamente armazenadas em baixa temperatura e embebidas em soluções de GA3 e CEPA. em geral, não houve diferença entre as temperaturas de armazenamento de 7 °C e 25 °C. A germinação sob luz branca de sementes pré-tratadas com CEPA + GA3 e CEPA foi antecipada, em comparação com o controle de água destilada, sendo que o efeito da mistura CEPA + GA3 foi mais pronunciado do que o de CEPA sozinho. Assim, a taxa de germinação de sementes de V. tucanorum, sob luz branca, pode ser melhorada pela embebição das mesmas em soluções de CEPA ou de CEPA + GA3.

Genetic and physiological alterations occurring in a yeast population continuously propagated at increasing temperatures with cell recycling

This work investigated the effects of increasing temperature from 30 degrees C to 47 degrees C on the physiological and genetic characteristics of Saccharomyces cerevisiae strain 63M after continuous fermentation with cell recycling in a system of five reactors in series. Steady state was attained at 30 degrees C, and then the temperature of the system was raised so it ranged from 35 degrees C in the last reactor to 43 degrees C in the first reactor or feeding reactor with a 2 degrees C difference between reactors. After 15 days at steady state, the temperature was raised from 37 degrees C to 45 degrees C for 25 days at steady state, then from 39 degrees C to 47 degrees C for 20 days at steady state. Starter strain 63M was a hybrid strain constructed to have a MAT a/alpha, LYS/lys, URA/ura genotype. This hybrid yeast showed vigorous growth on plates at 40 degrees C, weak growth at 41 degrees C, positive assimilation of melibiose, positive fermentation of galactose, raffinose and sucrose. of 156 isolates obtained from this system at the end of the fermentation process, only 17.3% showed the same characteristics as starter strain 63M. Alterations in mating type reaction and in utilization of raffinose, melibiose, and sucrose were identified. Only 1.9% of the isolates lost the ability to grow at 40 degrees C. Isolates showing requirements for lysine and uracil were also obtained. In addition, cell survival was observed at 39-47 degrees C, but no isolates showing growth above 41 degrees C were obtained.

Growth kinetics of tin oxide nanocrystals in colloidal suspensions under hydrothermal conditions

Colloidal suspensions of tin oxide nanocrystals were synthesized at room temperature by the hydrolysis reaction of tin chloride (II), in an ethanolic solution. The coarsening kinetics of such nanocrystals was studied by submitting the as-prepared suspensions to hydrothermal treatments at temperatures of 100, 150 and 200 degrees C for periods between 60 and 12,000 min. Transmission electron microscopy (TEM) was used to characterize the samples (i.e. distribution of nanocrystal size, average particle radius and morphology). The results show that the usual Ostwald ripening coarsening mechanism does not fit well the experimental data, which is an indicative that this process is not significant for SnO2 nanocrystals, in the studied experimental conditions. The morphology evolution of the nanocrystals upon hydrothermal treatment indicates that growth by oriented attachment (OA) should be significant. A kinetic model that describes OA growth is successfully applied to fit the data. (c) 2006 Elsevier B.V. All rights reserved.

Structural characterization of undoped and Sb-doped SnO2 thin films fired at different temperatures

SnO2 thin films were obtained by the sol-gel method starting from inorganic precursor solutions. In this work, we compare the structure of undoped and Sb-doped SnO2 films prepared by dip-coating. The films were deposited on quartz substrates and then fired at different temperatures ranging from 383 up to 1173 K. The density and the thickness of the films were determined by X-ray reflectivity (XRR) and their porous nanostructure was characterized by grazing-incidence small angle X-ray scattering (GISAXS). XRR results corresponding to undoped and Sb-doped samples indicate a monotonous decrease in film thickness when they are fired at increasing temperatures. At same time, the apparent density of undoped samples exhibits a progressive increase while for Sb-doped films it remains invariant up to 973 K and then increases for T = 1173 K. Anisotropic GISAXS patterns of both films, Sb-doped and undoped, fired above 573 K indicate the presence of elongated pores with their major axis perpendicular to the film surface. For all firing temperatures the nanopores in doped samples are larger than in undoped ones. This suggests that Sb-doping favours the pore growth hindering the film densification. At the highest firing temperature (1173 K) this effect is reversed.

Epitaxial growth of LiNbO3 thin films in a microwave oven

Oriented LiNbO3 thin films were prepared using a polymeric precursor solution deposited on (0001) sapphire substrate by spin coating and crystallized in a microwave oven. Crystallization of the films was carried out in a domestic microwave oven. The influence of this type of heat treatment on the film orientation was analyzed by X-ray diffraction and electron channeling patterns, which revealed epitaxial growth of films crystallized at 550 and 650 degreesC for 10 min. A microstructural study indicated that the films treated at temperatures below 600 degreesC were homogeneous and dense, and the optical properties confirmed the good quality of these films. (C) 2003 Elsevier B.V. B.V. All rights reserved.

Influence of temperature on the properties of the xylanolytic enzymes of the thermotolerant fungus Aspergillus phoenicis

This study reports on the effects of growth temperature on the secretion and some properties of the xylanase and beta-xylosidase activities produced by a thermotolerant Aspergillus phoenicis. Marked differences were observed when the organism was grown on xylan-supplemented medium at 25 degreesC or 42 degreesC. Production of xylanolytic enzymes reached maximum levels after 72 h of growth at 42 degreesC; and levels were three- to five-fold higher than at 25 degreesC. Secretion of xylanase and beta-xylosidase was also strongly stimulated at the higher temperature. The optimal temperature was 85 degreesC for extracellular and 90 degreesC for intracellular beta-xylosidase activity, independent of the growth temperature. The optimum temperature for extracellular xylanase increased from 50 degreesC to 55 degreesC when the fungus was cultivated at 42 degreesC. At the higher temperature, the xylanolytic enzymes produced by A. phoenicis showed increased thermo stability, with changes in the profiles of pH optima. The chromatographic profiles were distinct when samples obtained from cultures grown at different temperatures were eluted from DEAE-cellulose and Biogel P-60 columns.

Structural electrical and optical properties of undoped and indium doped ZnO thin films prepared by the pyrosol process at different temperatures

The influence of the substrate temperature on the structural features and opto-electrical properties of undoped and indium-doped ZnO thin films deposited by pyrosol process was investigated. The addition of indium induces a drastic decrease (by a factor approximate to 10(10) for samples deposited at 300 degreesC) in the electrical resistivity of films, the lowest electrical resistivity (6 mOmega-cm) being observed for the film deposited at 450 degreesC. Films are highly transparent (>80%) in the Vis-NIR ranges, and the optical band gap exhibits a blue shift (from 3.29 to 3.33 eV) for the In-doped films deposited at increasing temperature. Preferential orientation of the ZnO crystallites with the c-axis perpendicular to the substrate surface and an anisotropic morphology of the nanoporous structure was observed for films growth at 300 and 350 degreesC. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Nucleation and growth of mullite whiskers from lanthanum-doped aluminosilicate melts

Nucleation and growth of mullite whiskers in the La2O3-Al2O3-SiO2 system were investigated in the 1500degrees-1700degreesC temperature range. A differential thermal analysis (DTA) showed that the mullitization temperature decreases from 1350degreesC to 1240degreesC as a result of lanthania doping. In the temperature range of 1250-1500degreesC, most of the mullite grains have an Al2O3/SiO2 = 1.5 composition throughout the ceramic body; however, from 1400degreesC upward, the number of anisotropic grains with the Al2O3/SiO2 = 1.3 composition begins to increase. The concentration of alumina in the composition of the grain-boundary phase decreases as firing temperatures increase. At temperatures > 1500degreesC, alumina grains and whiskers grow on the internal and external surfaces of the ceramic body with the characteristic Al2O3/SiO2 = 1.3 composition. Removal of the mullite whisker layer by acid attack revealed an alumina-rich, rosace-like patterned microstructure correlated with the process of whisker nucleation and growth. In the early stages, whisker growth rates were found to be near 60 mum/h. Experimental evidence pointed to nucleation inside the thin glass layer on the external surface.

Controlled growth of anodic aluminium oxide films with hexagonal array of nanometer-sized pores filled with textured copper nanowires

Anodic aluminium oxide (AAO) films exhibiting a homogeneous morphology of parallel pores perpendicular to the surface were prepared in a two-step anodization process and filled with copper by electrochemical deposition. The optimum growth conditions for the formation of freestanding AAO films with hexagonal compact array of cylindrical pores were studied by field emission scanning electron microscopy and small angle X-ray scattering. The results show well-defined periodic structures with uniform pores size distribution for films with pore diameters between 40 and 70 nm prepared using different voltages and temperatures during the second anodization step. X-ray photoelectron spectroscopy and X-ray diffraction analysis of AAO films filled with copper show the formation of nanowires with high structural order, exhibiting a preferential crystalline orientation along the (2 2 0) axis and only small fraction of copper oxides. The best results for textured Cu nanowires were obtained at a reduction potential of -300 mV. (C) 2009 Elsevier Ltd. All rights reserved.

Acclimation to short-term low temperatures in two Eucalyptus globulus clones with contrasting drought resistance

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Influence of doping on the preferential growth of alpha-MoO3

MoO3 is a lamellar material with applications in different areas, as solid lubricants, catalysis, solar cells, etc. In the present work, MoO3 powders, synthesized by the polymeric precursor method, were doped with nickel or cobalt. The powder precursors were characterized by TG/DTA. After calcination between 500 and 700 degrees C, the samples were characterized by X-ray diffraction, infrared and Raman spectroscopy and scanning electron microscopy. beta-MoO3 was obtained after calcination at low temperatures. With the temperature increase, alpha-MoO3 is observed, with a preferential growth of the (0 2k 0) planes, when the material is doped and calcined at 700 degrees C. Doping with nickel increases five times the preferential growth. As a consequence, plate-like particles are observed. (c) 2007 Elsevier B.V. All rights reserved.

Growth Regulators and KNO3 on Seed Germination of Angelonia salicariifolia

Angelonia salicariifolia is an herbaceous perennial native to Brazil with ornamental potential as garden plant, cut-flower and potted plant. It has blue flowers 1.0 to 1.4 cm long, in 10-30 cm long terminal racemes. In previous studies seeds of A. salicariifolia showed a positive photoblastic behavior under constant temperatures of 10, 15, 20, 25, 30 and 35 degrees C. The present study evaluated the effects of growth regulators (100, 200, 300, 400, 500 mg L-1 of gibberellic acid and 2.25, 11.3, 22.5 mg L-1 of 6-benzylamino-purine) and potassium nitrate (0.2 and 1.0 %) on promoting its seed germination. The experiment was conducted in a completely randomized design with six replications of 25 seeds, for each treatment. Seeds from dehiscent capsules were sown on one layer of filter paper and moistened with growth regulators or KNO3 solutions. Germination was carried out at 25 degrees C +/- 1 degrees C, under continuous light or darkness. Germination (protusion of the radicle) was observed daily for 20 days. In the dark, only gibberellic acid promoted seed germination. The percentage of germination and the speed of germination index at 400 mg L-1 (47.3%; 0.86) and 500 mg L-1 (52.0%; 0.95) were significantly higher compared to 100 mg L-1 (27.8%; 0.38) and 200 mg L-1 (32.3%; 0.49). The mean germination time at 500 mg L-1 (10.0 days) was significantly smaller compared to 100 mg L-1 (11.9 days) and 200 mg L-1 (11.5 days). Under light, treatments did not differ among each other or from the control, except for 22.5 mg L-1 of 6-benzylamino-purine and potassium nitrate (1.0%), which decreased the percentage of germination and the speed of germination index compared to control. The application of growth regulators or potassium nitrate under light condition is not necessary, since these treatments did not improve germination percentage or the speed of germination index.