Qualitative evaluation of active potential barriers in SnO2-based polycrystalline devices by electrostatic force microscopy

This paper discuss the qualitative use of electrostatic force microscopy to study the grain boundary active potential barrier present in dense SnO2-based polycrystalline semiconductors. The effect of heat treatment under rich- and poor-oxygen atmospheres was evaluated while especially considering the number of active barriers at grain boundary regions. The results show that the number of active barriers decrease after heat treatment in an oxygen-poor atmosphere and increase after heat treatment in oxygen-rich atmospheres. The observed effect was explained by considering the presence of oxidized transition metal elements segregated at grain boundary regions which leads to the p-type character of this region, in agreement with the atomic barrier formation mechanism in metal oxide varistor systems.

Electrostatic force microscopy as a tool to estimate the number of active potential barriers in dense non-Ohmic polycrystalline SnO2 devices

In the present work, electroactive grain boundaries of highly dense metal oxide SnO2-based polycrystalline varistors were determined by electrostatic force microscopy (EFM). The EFM technique was applied to identify electroactive grain boundaries and thus estimate the amount of active grain boundary, which, in the metal oxide SnO2-based varistor, was calculated at around 85%, i.e., much higher than that found in traditional metal oxide ZnO-based varistors. The mean potential barrier height value obtained from the EFM analysis was in complete agreement with the values calculated from the C-V measurements, together with a complex capacitance plane analysis that validates the methodology proposed here. (c) 2006 American Institute of Physics.

Vertical and in-plane electrical transport in InAs/InP semiconductor nanostructures

Vertical and in-plane electrical transport in InAs/InP semiconductors wires and dots have been investigated by conductive atomic force microscopy (C-AFM) and electrical measurements in processed devices. Localized I-V spectroscopy and spatially resolved current images (at constant bias), carried out using C-AFM in a controlled atmosphere at room temperature, show different conductances and threshold voltages for current onset on the two types of nanostructures. The processed devices were used in order to access the in-plane conductance of an assembly with a reduced number of nanostructures. On these devices, signature of two-level random telegraph noise (RTN) in the current behavior with time at constant bias is observed. These levels for electrical current can be associated to electrons removed from the wetting layer and trapped in dots and/or wires. A crossover from conduction through the continuum, associated to the wetting layer, to hopping within the nanostructures is observed with increasing temperature. This transport regime transition is confirmed by a temperature-voltage phase diagram. © 2005 Materials Research Society.

A novel LTCC electrochemical cell construction and characterization: A detection compartment for portable devices

In this work we described for the first time the construction of a 25 μL electrochemical cell from low temperature co-fired ceramic (LTCC) material and carbon screen-printed electrode applicable in portable devices. Firstly, a carbon screen-printed electrode was prepared and characterized by cyclic voltammetry and scanning electron microscopy. Afterwards carbon polymeric film and metal pastes were dropped into the LTCC cell cavities in order to determine the device electrodes, and this arrangement was also electrochemically characterized. The great advantage of this promising device is the simple construction method and its widespread applicability in reusable portable devices. © 2013 The Royal Society of Chemistry.

The application of a surface response methodology in the solar/UV-induced degradation of dairy wastewater using immobilized ZnO as a semiconductor

An Advanced Oxidation Process (AOPs) was carried out in this study with the use of immobilized ZnO and solar/UV as an energy source to degrade dairy wastewater. The semibatch reactor system consisted of metal plate of 800 × 250 mm and a glass tank. The reaction time was of 3 h for 3 L of dairy wastewater. Experiments were performed based on a surface response methodology in order to optimize the photocatalytic process. Degradation was measured in percentage terms by total organic carbon (TOC). The entry variables were ZnO coating thickness and pH, using three levels of each variable. The optimized results showed a TOC degradation of 31.7%. Optimal parameters were metal-plate coating of 100 m of ZnO and pH of 8.0. Since solar/UV is a constant and free energy source in most tropical countries, this process tends to suggest an interesting contribution in dairy wastewater treatment, especially as a pretreatment and the optimal conditions to guarantee a better efficiency of the process. © 2013 Gisella R. Lamas Samanamud et al.

Uma contribuição ao estudo do transformador com nucleo de metal amorfo para aplicação em sistemas elétricos de potência de alta frequência

Pós-graduação em Engenharia Elétrica - FEIS

Materiais óxidos magnéticos nanoestruturados

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Síntese hidrotérmica de nanopartículas de 'TI''O IND.2', de nanocompósitos metal/'TI''O IND.2' e degradação oxidativa de 4-clorofenol em reator membranar fotocatalítico

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Caracterização de polímeros unidimensionais (Poliacetileno, Poliazina e Poliazoeteno) através de cálculos espectroscópicos e transporte eletrônico

Neste trabalho é apresentado um estudo teórico da base neutro e bipolaron e estados excitados de moléculas a partir de polímeros isoeletrônicos compostos pelo Poliacetileno, Poliazina e Poliazoeteno. Os resultados obtidos, utilizando metodologia DFT e ab initio, revelam que uma boa descrição dos defeitos pode ser importante na investigação da transição isolante-metal de polímeros quase-unidimensional indicando um comportamento metálico em torno do nível de Fermi, como mecanismo de condutividade dos polímeros. Este resultado é consistente com dados experimentais e não faz menção a metodologia Su-Schrieffer-Heeger (SSH). E mais, os resultados são consistentes com características importantes como nanodispositivo e podem ser resumidos como: (i) poderia ser usado como retificador molecular uni-direcional com uma geometria conformacional com vantagem de pequeno acoplamento, (ii) a função de Green de não-equilíbrio presente na simulação poderia corrigir de tal maneira os Poliacetileno, Poliazina e Poliazoeteno sem corrente de porta, (iii) com base nas propriedades das ligações tipo, pode ser utilizada para projetar dispositivos com aplicações em eletrônica molecular.

Transporte eletrônico em nanofitas de grafeno sob a influência de fatores externos, via primeiros princípios

O grafeno é a primeira estrutura bidimensional que se obteve experimentalmente. Sua rede cristalina é uma rede hexagonal, conhecida como "Favo de Mel", possui apenas um átomo de espessura. Cortes em folhas de grafeno, privilegiando determinada direção, geram as chamadas nanofitas de grafeno. Embora o grafeno se comporte como um metal, é sabido que as nanofitas podem apresentar comportamentos semicondutor, metálico ou semimetálico, dependendo da direção de corte e/ou largura da fita. No caso de nanofitas semicondutoras, a largura da banda proibida (band gap), entre outros fatores, depende da largura da nanofita. Neste trabalho adotou-se métodos de primeiros princípios como o DFT (Density Functional Theory), afim de se obter as características tais como curvas de dispersão para nanofitas. Neste trabalho, primeiramente, são apresentados diagramas de bandas de energia e curvas de densidade de estados para nanofitas de grafeno semicondutoras, de diferentes larguras, e na ausência de influências externas. Utilizou-se métodos de primeiros princípios para a obtenção destas curvas e o método das funções de Green do Não Equilíbrio para o transporte eletrônico. Posteriormente foi investigado a influência da hidrogenização, temperatura e tensão mecânica sobre sistema, isso além, de se estudar o comportamento de transporte eletrônico com e sem influência destes fatores externos. Vale ressaltar que as nanofitas de grafeno apresentam possibilidades reais de aplicação em nanodispositivos eletrônicos, a exemplo de nanodiodos e nanotransistores. Por esse motivo, é importante se ter o entendimento de como os fatores externos alteram as propriedades de tal material, pois assim, espera-se que as propriedades de dispositivos eletrônicos também sejam influenciadas da mesma maneira que as nanofitas.

Complexos intermetálicos de irídio e európio: sensibilização via banda de transferência de carga metal-ligante

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Avaliação do tipo de carregamento, pela análise de elementos finitos, sobre a resistência de união ao cisalhamento da interface metal/porcelana (Ni-Cr/vita omega 900)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Investigação da condução elétrica em fitas duplas de dna imobilizadas em eletrodos de ouro por medidas eletroquímicas

Pós-graduação em Química - IQ

Estudo, construção e caracterização de diodos orgânicos tipo Schttky

During the twentieth century the inorganic electronics was largely developed being present in various industrial equipment or household use. However, at the end of that century were verified electronic properties in organic compounds, giving rise to the field of organic electronics. Since then, the physical properties of elementary devices such as diodes and organic transistors have been studied. In this work was studied the properties of diode devices fabricated with a semiconductor polymer, the poly-o-methoxyaniline (POMA). Devices containing electrodes of Au and Al were fabricated with semiconductor polymer of different doping levels. We found that the rectifying behavior for the heterojunctions metal/polimer are reached only for high doping level (with conductivity greater than 1,77. 10-9 S / cm), which gives the devices characteristic of a Schottky diode. The rectifying behavior was observed for electric fields of low magnitude, below the operating field (~ 600 V/cm), while for electric field greater than 600 V/cm the a linear behavior I vs.V was obtained. We determined that this Ohmic behavior arises from the charge transport over the volume of the semiconductor material after the lowering of the metal/semiconductor barrier. In devices with weakly doped semiconductor, the electrical resistance of the volume becomes high and the process of charge transportation is dominated by the volume, for any intensity of the applied electric field

Diodo planar orgânico Schottky: construção e caracterização

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)