Attributes of irrigated rice and soil solution as affected by salinity levels of the water layer

In the State of Rio Grande do Sul, Brazil, flooded rice fields using Patos Lagoon as the source of water for irrigation are subject to be damaged by salinity, since this source is bound to the sea on its southern end. The sensitivity of rice is variable during plant development, being higher in the seedling and reproductive periods. However, there is not enough information about the behavior of plants under salt stress during the course of its development, especially in the vegetative stage. This study evaluated the effect of different levels of salinity of irrigation water on the salinity of soil solution over time and on some plant attributes, during the vegetative stage of rice. The study was conducted in a greenhouse, where seeds of the variety IRGA 424 were sown in pots and irrigated with water with electrical conductivity (ECi) levels of: 0.3, 0.75, 1.5, 3.0 and 4.5 dS m-1; from the tillering initiation (V4) until the panicle initiation (PI). The evaluations made were the electrical conductiviy of soil solution (ECe), the dry biomass of plants and stems, tillering, height and the transpiration of plants. The ECe increased with the ECi over time, and was determined by water transpiration flux in pots. The ECe values at the end of the experiment were high and, in most cases, higher than the critical values for flooded rice. The growth attributes of rice were negatively affected from ECi of 2.0 dS m-1 and ECe of 4.0 dS m-1.

Influence of litter layer removal on the soil thermal regime of a pine forest in a mediterranean climate

The removal of the litter layer in Portuguese pine forests would reduce fire hazard, but on the other hand this practice would influence the thermal regime of the soil, hence affecting soil biological activity, litter decomposition and nutrient dynamics. Temperature profiles of a sandy soil (Haplic Podzol) under a pine forest were measured with thermocouples at depths to 16 cm, with and without litter layer. The litter layer acted as a thermal insulator, reducing the amplitude of the periodic temperature variation in the mineral soil underneath and increasing damping depths, particularly at low soil water contents. At the mineral soil surface the reduction of amplitudes was about 2.5 ºC in the annual cycle and 5 to 6.7 ºC in the daily cycle, depending on the soil water content. When soil was both cold and wet, mean daily soil temperatures were higher (about 1 - 1.5 ºC) under the litter layer. Improved soil thermal conditions under the litter layer recommend its retention as a forest management practice to follow in general.

Vacancy-driven ordering in a two-dimensional binary alloy

Domain growth in a system with nonconserved order parameter is studied. We simulate the usual Ising model for binary alloys with concentration 0.5 on a two-dimensional square lattice by Monte Carlo techniques. Measurements of the energy, jump-acceptance ratio, and order parameters are performed. Dynamics based on the diffusion of a single vacancy in the system gives a growth law faster than the usual Allen-Cahn law. Allowing vacancy jumps to next-nearest-neighbor sites is essential to prevent vacancy trapping in the ordered regions. By measuring local order parameters we show that the vacancy prefers to be in the disordered regions (domain boundaries). This naturally concentrates the atomic jumps in the domain boundaries, accelerating the growth compared with the usual exchange mechanism that causes jumps to be homogeneously distributed on the lattice.

Comparison between molecular dynamics abd Monte Carlo simulations of an ordering process in a binary alloy

Ordering in a binary alloy is studied by means of a molecular-dynamics (MD) algorithm which allows to reach the domain growth regime. Results are compared with Monte Carlo simulations using a realistic vacancy-atom (MC-VA) mechanism. At low temperatures fast growth with a dynamical exponent x>1/2 is found for MD and MC-VA. The study of a nonequilibrium ordering process with the two methods shows the importance of the nonhomogeneity of the excitations in the system for determining its macroscopic kinetics.

Covariant description of kinetic freeze-out through a finite spacelike layer

The problem of freeze-out (FO) in relativistic heavy-ion reactions is addressed. We develop and analyze an idealized one-dimensional model of FO in a finite layer, based on the covariant FO probability. The resulting post FO phase-space distributions are discussed for different FO probabilities and layer thicknesses.

Rill erosion on an oxisol influenced by a thin compacted layer

The presence of compacted layers in soils can induce subprocesses (e.g., discontinuity of water flow) and induces soil erosion and rill development. This study assesses how rill erosion in Oxisols is affected by a plow pan. The study shows that changes in hydraulic properties occur when the topsoil is eroded because the compacted layer lies close below the surface. The hydraulic properties that induce sediment transport and rill formation (i.e., hydraulic thresholds at which these processes occur) are not the same. Because of the resistance of the compacted layer, the hydraulic conditions leading to rill incision on the soil surface differed from the conditions inducing rill deepening. The Reynolds number was the best hydraulic predictor for both processes. The formed rills were shallow and could easily be removed by tillage between crops. However, during rill development, large amounts of soil and contaminants could also be transferred.

Fingerlike aggregates in thin-layer electrodeposition

Electrodeposition experiments conducted in a thin-layer horizontal cell containing a nonbinary aqueous electrolyte prepared with cupric sulfate and sodium sulfate gave rise to fingerlike deposits, a novel and unexpected growth mode in this context. Both the leading instability from which fingers emerge and some distinctive features of their steady evolution are interpreted in terms of a simple model based on the existing theory of fingering in fluids.

Graphoepitaxy of CeO2 on MgO and its application to the fabrication of 45° grain boundary Josephson junctions of YBa2Cu3O7-x

We communicate a detailed study of the epitaxial growth of CeO2 on MgO. The key feature of the growth is the dependence of the in¿plane orientation of the CeO2 epitaxial layer on the MgO surface morphology. Atomic force microscopic (AFM) measurements, x¿ray analyses, as well as high¿resolution transmission electron microscopy (HRTEM) investigations reveal that on rough substrates a cube¿on¿cube growth of CeO2 on MgO occurs while on smooth substrates the CeO2 unit cell is rotated around the surface normal by 45° with respect to the MgO unit cell when the deposition rate is low (~0.3 Å/s) during the first stages of growth. This growth mechanism can be used for a defined fabrication of 45° grain boundaries in the CeO2 layer by controlling the surface roughness of the MgO substrate. This report demonstrates that these 45° grain boundaries may be used to fabricate YBa2Cu3O7¿x Josephson junctions.

Computer-aided procedure for optimization of layer thickness uniformity in thermal evaporation physical vapor deposition chambers for lens coating

A computer-aided method to improve the thickness uniformity attainable when coating multiple substrates inside a thermal evaporation physical vapor deposition unit is presented. The study is developed for the classical spherical (dome-shaped) calotte and also for a plane sector reversible holder setup. This second arrangement is very useful for coating both sides of the substrate, such as antireflection multilayers on lenses. The design of static correcting shutters for both kinds of configurations is also discussed. Some results of using the method are presented as an illustration.

Nucleation of diamond on silicon, SiAlON, and graphite substrates coated with an a-C:H layer

We investigated the influence of a hydrogenated disordered carbon (a-C:H) layer on the nucleation of diamond. Substrates c-Si<100>, SiAlON, and highly oriented pyrolytic graphite {0001} were used in this study. The substrate surfaces were characterized with Auger electron spectroscopy (AES) while diamond growth was followed with Raman spectroscopy and scanning electron microscopy (SEM). It was found that on silicon and SiAlON substrates the presence of the a-C:H layer enabled diamond to grow readily without any polishing treatment. Moreover, more continuous diamond films could be grown when the substrate was polished with diamond powder prior to the deposition of the a-C:H layer. This important result suggests that the nucleation of diamond occurs readily on disordered carbon surfaces, and that the formation of this type of layer is indeed one step in the diamond nucleation mechanism. Altogether, the data refute the argument that silicon defects play a direct role in the nucleation process. Auger spectra revealed that for short deposition times and untreated silicon surfaces, the deposited layer corresponds to an amorphous carbon layer. In these cases, the subsequent diamond nucleation was found to be limited. However, when the diamond nucleation density was found to be high; i.e., after lengthy deposits of a¿C:H or after diamond polishing, the Auger spectra suggested diamondlike carbon layers.