Mechanism on exciton-mediated energy transfer in erbium-doped silicon

Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.

Structural study of YSi1.7 layers formed by channeled ion beam synthesis

High quality YSi1.7 layers (chi(min) of Y is 3.5%) have been formed by 60 keV Y ion implantation in Si (111) substrates to a dose of 1.0 x 10(17)/cm(2) at 450 degrees C using channeled ion beam synthesis (CIBS). It shows that, compared to the conventional nonchanneled ion beam synthesis, CIBS is beneficial in forming YSi1.7 layers with better quality due to the lower defect density created in the implanted layer. Rutherford backscattering/channeling and x-ray diffraction have been used to study the structure and the strain of the YSi1.7 layers. The perpendicular and parallel elastic strains of the YSi1.7 epilayer are e(perpendicular to) = -0.67% +/- 0.02% and e(parallel to) = +1.04% +/- 0.08%. The phenomenon that a nearly zero mismatch of the YSi1.7/Si (111) system results in a nonpseudomorphic epilayer with a rather large parallel strain relative to the Si substrate (epsilon(parallel to) = +1.09%) is explained, and the model is further used to explain the elastic strain of epitaxial ErSi1.7 and GdSi1.7 rare-earth silicides. (C) 1998 American Vacuum Society.

Verification of EL2 electronic absorption effect on charge transfer in semi-insulating GaAs

The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole photoionizations, and the transition from its ground state to metastable state, respectively. Under an illumination with a selected photon energy in the near infrared region, these three processes with different optical cross sections will show different kinetics against the illumination time. It has recently been shown that the photosensitivity (measured under 1.25 eV illumination) of the local vibrational mode absorption induced by some deep defect centers in SI-GaAs is a consequence of the electron and hole photoionizations of EL2. This paper directly measures the kinetics of the electronic transition associated with EL2 under 1.25 eV illumination, which implies the expected charge transfer among different charge states of the EL2 center. A calculation based on a simple rate equation model is in good agreement with the experimental results.

Mechanism on exciton-mediated energy transfer in erbium-doped silicon

Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.

Dependence of the cross sections for Ir isotopes on the values of Qgg in the heavy ion collision

197Au were irradiated with 47 MeV/u 12C ions. Iridium was produced via the multinucleon transfer reactions in bombardments of 197Au with 12C. and was separated radiochemically from Au and the mixture of the reaction products. The γ radioactivities of Ir isotopes were measured by using a HPGe detector. The production cross sections of Ir isotopes were determined from activities of Ir isotopes at the end of bombardment and the other relative data. It has been found that the cross sections for neutron-rich iso...

High-efficiency transfer and expression of AdCMV-p53 in human cervix adenocarcinoma cells induced by subclinical-dose carbon beam radiation

Purpose The aim of this study is to evaluate the eVect of carbon-beam irradiation on adenovirus-mediated p53 transfer in human cervix adenocarcinoma.Materials and methods The HeLa cells pre-exposed to carbon-beam or -ray, were infected with replication-deficient adenovirus recombinant vectors, containing human wild-type p53 (AdCMV-p53) and green Xuorescent protein (GFP) (AdCMV–GFP), respectively. The GFP transfer and p53 expression were detected by Xow cytometric analysis.Results The GFP transfer frequency in C-beam with AdCMV-GFP groups was 38–50% more than that inγ-ray with AdCMV–GFP groups. The percentage of p53 positive cells in the C-beam with AdCMV–p53 groups was 34–55.6% more than that in γ-ray with AdCMV-p53 groups (p < 0.05), suggesting that subclinical-dose C-beam irradiation could signiWcantly promote exogenous p53 transfer and p53 expression, and extend the duration of p53 expression in the HeLa cells. The expression of p21 increased with p53 expression in HeLa cells. The survival fractions for the 0.5–1.0 Gy C-beam with AdCMV-p53 groups were 38–43% less than those for the isodose γ-ray with AdCMV-p53 groups, and 31–40% less than those for the C-beam only groups (p <0.05).Conclusions The subclinical-dose C-beam irradiation could signiWcantly promote the transfer and expression of exogenous p53, extend the duration of p53 expression, and enhance the suppression of p53 on cervix adenocarcinoma cells.

Experimental study on heavy ion single event effects in SOI SRAMs

Silicon-on-insulator (SOI) technologies have been developed for radiation-hardened military and space applications. The use of SOI has been motivated by the full dielectric isolation of individual transistors, which prevents latch-up. The sensitive region for charge collection in SOI technologies is much smaller than for bulk-silicon devices potentially making SOI devices much harder to single event upset (SEU). In this study, 64 kB SOI SRAMs were exposed to different heavy ions, such as Cu, Br, I, Kr. Experimental results show that the heavy ion SEU threshold linear energy transfer (LET) in the 64 kB SOI SRAMs is about 71.8 MeV cm(2)/mg. Accorded to the experimental results, the single event upset rate (SEUR) in space orbits were calculated and they are at the order of 10(-13) upset/(day bit).

Electron transfer in fast atomic collisions in the presence of an x-ray laser

We consider electron capture in fast collisions between a proton and hydrogen in the presence of an intense x-ray laser whose angular frequency omega is close to v(2)/2, where v is the collision velocity. We show that in such a case laser-induced capture becomes possible and that the latter proceeds via both induced photon emission and photon absorption channels and can, in principle, compete with kinematic and radiative electron capture.

Prematurely condensed chromosome fragments in human lymphocytes induced by high doses of high-linear-energy-transfer irradiation

This study provides a useful biodosimetry protocol for radiation accidents that involve high doses of heavy particle radiation. Human peripheral blood lymphocytes (PBLs) were irradiated in vitro with high doses (5–50 Gy) of charged heavy-ion particles (carbon ions, at an effective linear-energy-transfer (LET) of 34.6 keV/ m), and were then stimulated to obtain dividing cells. PBLs were treated with 100nMcalyculin A to force chromosomes to condense prematurely, and chromosome spreads were obtained and stained with Giemsa. The G2 prematurely condensed chromosome (G2-PCC) index and the number of G2-PCC including fragments (G2-PCC-Fs) per cell for each radiation dose point were scored. Dose-effect relationships were obtained by plotting the G2-PCC indices or G2-PCC-Fs numbers against radiation doses. The G2-PCC index was greater than 5% up to doses of 15 Gy; even after a 30Gy radiation dose, the index was 1 to 2%. At doses higher than 30 Gy, however, the G2-PCC indices were close to zero. The number of G2-PCC-Fs increased steeply for radiation doses up to 30 Gy at a rate of 1.07 Gy−1. At doses higher than 30 Gy, the numbers of G2-PCC-Fs could not be accurately indexed because of the limited numbers of cells for analysis. Therefore, the number of G2-PCC-Fs could be used to estimate radiation doses up to 30 Gy. In addition, a G2-PCC index close to zero could be used as an indicator for radiation doses greater than 40 Gy.

Dynamical analysis on heavy-ion fusion reactions near Coulomb barrier

The shell correction is proposed in the improved isospin dependent quantum molecular dynamics (Im-IQMD) model, which plays an important role in heavy-ion fusion reactions near Coulomb barrier. By using the ImIQMD model, the static and dynamical fusion barriers, dynamical barrier distribution in the fusion reactions are analyzed systematically. The fusion and capture excitation functions for a series of reaction systems are calculated and compared with experimental data. It is found that the fusion cross sections for neutron-rich systems increase obviously, and the strong shell effects of two colliding nuclei result in a decrease of the fusion cross sections at the sub-barrier energies. The lowering of the dynamical fusion barriers favors the enhancement of the sub-barrier fusion cross sections, which is related to the nucleon transfer and the neck formation in the fusion reactions.

Experimental investigation of transfer ionization mechanism in slow He2+ -He collisions

The processes of transfer ionization in He2+ -He collisions at energies ranging from 20 to 40 keV have been studied experimentally by means of cold target recoil ions momentum spectroscopy. From the longitudinal momentum spectra of recoil ions, different mechanisms of transfer ionization have been obtained. The results show that one of the electrons of helium atom being captured into the ground state of projectile ion He2+ and the other one emitted to the continuum state of projectile or target are the dominant mechanisms of transfer ionization. The autoionization cross section of projectile after two-electron capture into a double excited state is small. Transfer ionization for one target electron capture into ground state and the other one into the continuum of projectile mainly occurs at large impact parameter collisions.

Potential sputtering by Highly Charged Ion bombardment on Au surface

The sputtered particle yields produced by Pbq+ (q=4-36) with constant kinetic energy bombardment on An surface were measured. The sputtering Could be separated to two parts: no potential sputtering is observed when q<24 (E-pot = 9.6 keV) and the sputtering yield increases with E-pot(1.2) for the higher charge states of q >= 24. The potential sputtering is mainly contributed by the relaxation of electronic excitations on target surface produced by the potential energy transfer from projectile to target atoms.