987 resultados para Electric field intensities
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Tin oxide (SnO2) nanowires are synthesized by Au catalyzed chemical vapor deposition of Sn and C mixture at 900 degrees C by employing a continuous flow of Ar: O-2 (10:1) for an hour. X-ray diffraction and Raman spectroscopy studies indicate that the as-grown SnO2 nanowires are crystalline in nature with tetragonal rutile phase. Electron microscopy studies reveal towards high aspect ratio of nanowires. The field emission studies show that SnO2 nanowires grown on Si substrate exhibit low turn-on field of 1.75 V/mu m (at 0.1 mu A/cm(2)) and long-term emission stability over a period of more than 50 h with a current density of 4 mu A/cm(2) at a constant electric field of 2.25 V/mu m. Hardly any considerable degradation in the emission current is noticed even after 50 h which may be attributed to the high crystallinity of SnO2 nanowires. (C) 2015 Elsevier B.V. All rights reserved.
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This paper presents a fully anisotropic analysis of strip electric saturation model proposed by Gao et al. (1997) (Gao, H.J., Zhang, T.Y., Tong, P., 1997. Local and global energy release rates for an electrically yielded crack in a piezoelectric ceramic. J. Mech. Phys. Solids, 45, 491-510) for piezoelectric materials. The relationship between the size of the strip saturation zone ahead of a crack tip and the applied electric displacement field is established. It is revealed that the critical fracture stresses for a crack perpendicular to the poling axis is linearly decreased with the increase of the positive applied electric field and increases linearly with the increase of the negative applied electric field. For a crack parallel to the poring axis, the failure stress is not effected by the parallel applied electric field. In order to analyse the existed experimental results, the stress fields ahead of the tip of an elliptic notch in an infinite piezoelectric solid are calculated. The critical maximum stress criterion is adopted for determining the fracture stresses under different remote electric displacement fields. The present analysis indicates that the crack initiation and propagation from the tip of a sharp elliptic notch could be aided or impeded by an electric displacement field depending on the field direction. The fracture stress predicted by the present analysis is consistent with the experimental data given by Park and Sun (1995) (Park, S., Sun, C.T., 1995. Fracture criteria for piezoelectric materials. J. Am. Ceram. Soc 78, 1475-1480).
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Plasma Enhanced Chemical Vapour Deposition is an extremely versatile technique for directly growing multiwalled carbon nanotubes onto various substrates. We will demonstrate the deposition of vertically aligned nanotube arrays, sparsely or densely populated nanotube forests, and precisely patterned arrays of nanotubes. The high-aspect ratio nanotubes (∼50 nm in diameter and 5 microns long) produced are metallic in nature and direct contact electrical measurements reveal that each nanotube has a current carrying capacity of 107-108 A/cm2, making them excellent candidates as field emission sources. We examined the field emission characteristics of dense nanotube forests as well as sparse nanotube forests and found that the sparse forests had significantly lower turn-on fields and higher emission currents. This is due to a reduction in the field enhancement of the nanotubes due to electric field shielding from adjacent nanotubes in the dense nanotube arrays. We thus fabricated a uniform array of single nanotubes to attempt to overcome these issues and will present the field emission characteristics of this.
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Many experimental observations have shown that a single domain in a ferroelectric material switches by progressive movement of domain walls, driven by a combination of electric field and stress. The mechanism of the domain switch involves the following steps: initially, the domain has a uniform spontaneous polarization; new domains with the reverse polarization direction nucleate, mainly at the surface, and grow though the crystal thickness; the new domain expands sideways as a new domain continues to form; finally, the domain switch coalesces to complete the polarization reversal. According to this mechanism, the volume fraction of the domain switching is introduced in the constitutive law of the ferroelectric material and used to study the nonlinear constitutive behavior of a ferroelectric body in this paper. The principle of stationary total potential energy is put forward in which the basic unknown quantities are the displacement u(i), electric displacement D-i and volume fraction rho(I) of the domain switching for the variant I. The mechanical field equation and a new domain switching criterion are obtained from the principle of stationary total potential energy. The domain switching criterion proposed in this paper is an expansion and development of the energy criterion established by Hwang et al. [ 1]. Based on the domain switching criterion, a set of linear algebraic equations for determining the volume fraction rho(I) of domain switching is obtained, in which the coefficients of the linear algebraic equations only contain the unknown strain and electric fields. If the volume fraction rho(I) of domain switching for each domain is prescribed, the unknown displacement and electric potential can be obtained based on the conventional finite element procedure. It is assumed that a domain switches if the reduction in potential energy exceeds a critical energy barrier. According to the experimental results, the energy barrier will strengthen when the volume fraction of the domain switching increases. The external mechanical and electric loads are increased step by step. The volume fraction rho(I) of domain switching for each element obtained from the last loading step is used as input to the constitutive equations. Then the strain and electric fields are calculated based on the conventional finite element procedure. The finite element analysis is carried out on the specimens subjected to uniaxial coupling stress and electric field. Numerical results and available experimental data are compared and discussed. The present theoretic prediction agrees reasonably with the experimental results.
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Strain energy density expressions are obtained from a field model that can qualitatively exhibit how the electrical and mechanical disturbances would affect the crack growth behavior in ferroelectric ceramics. Simplification is achieved by considering only three material constants to account for elastic, piezoelectric and dielectric effects. Cross interaction of electric field (or displacement) with mechanical stress (or strain) is identified with the piezoelectric effect; it occurs only when the pole is aligned normal to the crack. Switching of the pole axis by 90degrees and 180degrees is examined for possible connection with domain switching. Opposing crack growth behavior can be obtained when the specification of mechanical stress sigma(infinity) and electric field E-infinity or (sigma(infinity), E-infinity) is replaced by strain e and electric displacement D-infinity or (epsilon(infinity), D-infinity). Mixed conditions (sigma(infinity),D-infinity) and (epsilon(infinity),E-infinity) are also considered. In general, crack growth is found to be larger when compared to that without the application of electric disturbances. This includes both the electric field and displacement. For the eight possible boundary conditions, crack growth retardation is identified only with (E-y(infinity),sigma(y)(infinity)) for negative E-y(infinity) and (D-y(infinity), epsilon(y)(infinity)) for positive D-y(infinity) while the mechanical conditions sigma(y)(infinity) or epsilon(y)infinity are not changed. Suitable combinations of the elastic, piezoelectric and dielectric material constants could also be made to suppress crack growth. (C) 2002 Published by Elsevier Science Ltd.
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Cracking of ceramics with tetragonal perovskite grain structure is known to appear at different sites and scale level. The multiscale character of damage depends on the combined effects of electromechanical coupling, prevailing physical parameters and boundary conditions. These detail features are exhibited by application of the energy density criterion with judicious use of the mode I asymptotic and full field solution in the range of r/a = 10(-4) to 10(-2) where r and a are, respectively, the distance to the crack tip and half crack length. Very close to the stationary crack tip, bifurcation is predicted resembling the dislocation emission behavior invoked in the molecular dynamics model. At the macroscopic scale, crack growth is predicted to occur straight ahead with two yield zones to the sides. A multiscale feature of crack tip damage is provided for the first time. Numerical values of the relative distances and bifurcation angles are reported for the PZT-4 ceramic subjected to different electric field to applied stress ratio and boundary conditions that consist of the specification of electric field/mechanical stress, electric displacement/mechanical strain, and mixed conditions. To be emphasized is that the multiscale character of damage in piezoceramics does not appear in general. It occurs only for specific combinations of the external and internal field parameters, elastic/piezoelectric/dielectric constants and specified boundary conditions. (C) 2002 Published by Elsevier Science Ltd.
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Attosecond-pulse extreme-ultraviolet (XUV) photoionization in a two-color laser field is investigated. Attosecond pulse trains with different numbers of pulses are examined, and their strong dependence on photoelectronic spectra is found. Single-color driving-laser-field-assisted attosecond XUV photoionization cannot determine the number of attosecond pulses from the photoelectronic energy spectrum that are detected orthogonally to the beam direction and the electric field vector of the linearly polarized laser field. A two-color-field-assisted XUV photoionization scheme is proposed for directly determining the number of attosecond pulses from a spectrum detected orthogonally. (C) 2005 Optical Society of America.
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[ES]El estándar de radiodifusión de televisión digital terrestre DVB-T (Digital Video Broadcasting - Terrestrial) es uno de los estándares más extendidos en todo el mundo. Su sucesor, DVB-T2, ha sido desplegado en 24 países y adoptado por otros 32 a lo largo de los últimos cinco años. Este despliegue ha coincidido con el rápido desarrollo de la telefonía móvil, con la que comparte la banda UHF. Debido a las limitaciones del espectro, es necesario estudiar la posibilidad de ofrecer los servicios de DVB-T2 en la banda VHF. El objetivo de este trabajo de fin de grado es estudiar los criterios de planificación de las redes DVB-T2 en la banda VHF. Para ello se analizan las áreas afectadas por el cambio de banda, como son la estimación del campo eléctrico, los características de los componentes de transmisión y recepción de la señal y los parámetros estándar. Además, se calculan las intensidades mínimas de campo y los alcances máximos de cobertura para diferentes configuraciones.
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Part I
The electric birefringence of dilute DNA solutions has been studied in considerable detail and on a large number of samples, but no new and reliable information was discovered concerning the tertiary structure of DNA. The large number of variables which effect the birefringence results is discussed and suggestions are made for further work on the subject.
The DNA molecules have been aligned in a rapidly alternating (10 to 20 kc/sec) square wave field confirming that the orientation mechanism is that of counterion polarization. A simple empirical relation between the steady state birefringence, Δnst, and the square of the electric field, E, has been found: Δnst = E2/(a E2 + b), where a = 1/Δns and b = (E2/Δnst)E→o. Δns is the birefringence extrapolated to infinite field strength.
The molecules show a distribution of relaxation times from 10-4 to 0.2 sec, which is consistent with expectations for flexible coil molecules. The birefringence and the relaxation times decrease with increasing salt concentrations. They also depend on the field strength and pulse duration in a rather non-reproducible manner, which may be due in part to changes in the composition of the solution or in the molecular structure of the DNA (other than denaturation). Further progress depends on the development of some control over these effects.
Part II
The specificity of the dissociation of reconstituted and native deoxyribonucleohistones (DNH) by monovalent salt solutions has been investigated. A novel zone ultracentrifugation method is used in which the DNH is sedimented as a zone through a preformed salt gradient, superimposed on a stabilizing D2O (sucrose) density gradient. The results, obtained by scanning the quartz sedimentation tubes in a spectrophotometer, were verified by the conventional, preparative sedimentation technique. Procedures are discussed for the detection of microgram quantities of histones, since low concentrations must be used to prevent excessive aggregation of the DNH.
The data show that major histone fractions are selectively dissociated from DNH by increasing salt concentrations: Lysine rich histone (H I) dissociates gradually between 0.1 and 0.3 F, slightly lysine rich histone (H II) dissociates as a narrow band between 0.35 and 0.5 F, and arginine rich histone (H III, H IV) dissociates gradually above 0.5 F NaClO4.
The activity of the partially dissociated, native DNH in sustaining RNA synthesis, their mobility and their unusual heat denaturation and renaturation behavior are described. The two-step melting behavior of the material indicates that the histones are non-randomly distributed along the DNA, but the implications are that the uncovered regions are not of gene-size length.
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The Mössbauer technique has been used to study the nuclear hyperfine interactions and lifetimes in W182 (2+ state) and W183 (3/2- and 5/2- states) with the following results: g(5/2-)/g(2+) = 1.40 ± 0.04; g(3/2- = -0.07 ± 0.07; Q(5/2-)/Q(2+) = 0.94 ± 0.04; T1/2(3/2-) = 0.184 ± 0.005 nsec; T1/2(5/2-) >̰ 0.7 nsec. These quantities are discussed in terms of a rotation-particle interaction in W183 due to Coriolis coupling. From the measured quantities and additional information on γ-ray transition intensities magnetic single-particle matrix elements are derived. It is inferred from these that the two effective g-factors, resulting from the Nilsson-model calculation of the single-particle matrix elements for the spin operators ŝz and ŝ+, are not equal, consistent with a proposal of Bochnacki and Ogaza.
The internal magnetic fields at the tungsten nucleus were determined for substitutional solid solutions of tungsten in iron, cobalt, and nickel. With g(2+) = 0.24 the results are: |Heff(W-Fe)| = 715 ± 10 kG; |Heff(W-Co)| = 360 ± 10 kG; |Heff(W-Ni)| = 90 ± 25 kG. The electric field gradients at the tungsten nucleus were determined for WS2 and WO3. With Q(2+) = -1.81b the results are: for WS2, eq = -(1.86 ± 0.05) 1018 V/cm2; for WO3, eq = (1.54 ± 0.04) 1018 V/cm2 and ƞ = 0.63 ± 0.02.
The 5/2- state of Pt195 has also been studied with the Mössbauer technique, and the g-factor of this state has been determined to be -0.41 ± 0.03. The following magnetic fields at the Pt nucleus were found: in an Fe lattice, 1.19 ± 0.04 MG; in a Co lattice, 0.86 ± 0.03 MG; and in a Ni lattice, 0.36 ± 0.04 MG. Isomeric shifts have been detected in a number of compounds and alloys and have been interpreted to imply that the mean square radius of the Pt195 nucleus in the first-excited state is smaller than in the ground state.
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A laser beam at wavelength 647 nm is focused on a sample of 5 mol% MgO-doped lithium niobate crystal for domain inversion by a conventional external electric field. In this case, a reduction of 36% in the electric field required for domain nucleation (nucleation field) is observed. To the best of our knowledge, it is the longest wavelength reported for laser-induced domain inversion. This extends the spectrum of laser inducing, and the experimental results are helpful to understand the nucleation dynamics under laser illumination. The dependence of nucleation fields on intensities of laser beams is analysed in experiments.
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Fields in subwavelength-diameter terahertz hollow optical fiber (STHOF) can be intensified by large discontinuity of the electric field at high index contrast interfaces. The influences of fiber geometry and refractive index of the dielectric region on the fiber characteristics, such as power distribution, enhancement factor, have been discussed in detail. By appropriate design, the intensity in the central region of STHOF may be enhanced by a factor of greater than 1.5 compared with subwavelength-diameter terahertz fiber without the central hole and the loss can be reduced. For its compact structure and simple fabrication process, the fiber may be very useful in many miniaturized high performance and novel terahertz photonic devices. (c) 2007 Elsevier B.V. All rights reserved.
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Multi-layer dielectric (MLD) gratings for pulse compressors in high-energy laser systems should provide high diffraction efficiency as well as high laser induced damage thresholds (LIDT). Nonuniform optical near-field distribution is one of the important factors to limit their damage resistant capabilities. Electric field distributions in the gratings and multi-layer film region are analyzed by using Fourier modal method. Optimization of peak electric field in the gratings ridge is performed with a merit function, including both diffraction efficiency and electric field enhancement when the top layer material is HfO2 and SiO2, respectively. A set of optimized gratings parameters is obtained for each structure, which reduce the peak electric field within the gratings ridge to being respective 1.39 and 1.84 times the value of incident light respectively. Finally, we also discuss the effects of gratings refractive index, gratings sidewall angle and incident angle on peak electric field in the gratings ridge. (c) 2006 Elsevier B.V. All rights reserved.
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Thermal-stable, conductive, and flexible carbon fabric (CF), which is composed of thin carbon fibers prepared by electrospinning, was used for the substrate of carbon nanotube (CNT) field emitter arrays. The field emitter arrays were prepared by chemical vapor deposition (CVD). The current density-electric field characteristics revealed that the CNT field emitter arrays on CF produced a higher current density at a lower turn-on voltage compared to ones on a Si substrate. This emitter integrated with a gate electrode based on hierarchy-structured carbon materials, CNTs on CF, can be used for light sources, displays, and other electronic devices. © 2009 Materials Research Society.
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We demonstrated a controllable tuning of the electronic characteristics of ZnO nanowire field effect transistors (FETs) using a high-energy proton beam. After a short proton irradiation time, the threshold voltage shifted to the negative gate bias direction with an increase in the electrical conductance, whereas the threshold voltage shifted to the positive gate bias direction with a decrease in the electrical conductance after a long proton irradiation time. The electrical characteristics of two different types of ZnO nanowires FET device structures in which the ZnO nanowires are placed on the substrate or suspended above the substrate and photoluminescence (PL) studies of the ZnO nanowires provide substantial evidence that the experimental observations result from the irradiation-induced charges in the bulk SiO(2) and at the SiO(2)/ZnO nanowire interface, which can be explained by a surface-band-bending model in terms of gate electric field modulation. Our study on the proton-irradiation-mediated functionalization can be potentially interesting not only for understanding the proton irradiation effects on nanoscale devices, but also for creating the property-tailored nanoscale devices.