Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy

Phase pure wurtzite GaN films were grown on Si (100) substrates by introducing a silicon nitride layer followed by low temperature GaN growth as buffer layers. GaN films grown directly on Si (100) were found to be phase mixtured, containing both cubic (beta) and hexagonal (alpha) modifications. The x-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN films grown with silicon nitride buffer layer grown at 800 degrees C when compared to the samples grown in the absence of silicon nitride buffer layer and with silicon nitride buffer layer grown at 600 degrees C. Core-level photoelectron spectroscopy of Si(x)N(y) layers reveals the sources for superior qualities of GaN epilayers grown with the high temperature substrate nitridation process. The discussion has been carried out on the typical inverted rectification behavior exhibited by n-GaN/p-Si heterojunctions. Considerable modulation in the transport mechanism was observed with the nitridation conditions. The heterojunction fabricated with the sample of substrate nitridation at high temperature exhibited superior rectifying nature with reduced trap concentrations. Lowest ideality factors (similar to 1.5) were observed in the heterojunctions grown with high temperature substrate nitridation which is attributed to the recombination tunneling at the space charge region transport mechanism at lower voltages and at higher voltages space charge limited current conduction is the dominating transport mechanism. Whereas, thermally generated carrier tunneling and recombination tunneling are the dominating transport mechanisms in the heterojunctions grown without substrate nitridation and low temperature substrate nitridation, respectively. (C) 2011 American Institute of Physics. [doi:10.1063/1.3658867]

Evaluation of 2D image reconstruction using fan-beam FBP algorithm with no backprojection weight from WLP completed truncated projection data

This paper presents the image reconstruction using the fan-beam filtered backprojection (FBP) algorithm with no backprojection weight from windowed linear prediction (WLP) completed truncated projection data. The image reconstruction from truncated projections aims to reconstruct the object accurately from the available limited projection data. Due to the incomplete projection data, the reconstructed image contains truncation artifacts which extends into the region of interest (ROI) making the reconstructed image unsuitable for further use. Data completion techniques have been shown to be effective in such situations. We use windowed linear prediction technique for projection completion and then use the fan-beam FBP algorithm with no backprojection weight for the 2-D image reconstruction. We evaluate the quality of the reconstructed image using fan-beam FBP algorithm with no backprojection weight after WLP completion.

Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy

InN quantum dots (QDs) were grown on Si (111) by epitaxial Stranski-Krastanow growth mode using plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN QDs was verified by the x-ray diffraction and transmission electron microscopy. Scanning tunneling microscopy has been used to probe the structural aspects of QDs. A surface bandgap of InN QDs was estimated from scanning tunneling spectroscopy (STS) I-V curves and found that it is strongly dependent on the size of QDs. The observed size-dependent STS bandgap energy shifts with diameter and height were theoretical explained based on an effective mass approximation with finite-depth square-well potential model.

Influence of Phase Connection and Terminal Conditions on Natural Frequencies of Three-Phase Transformer Windings

With the increasing use of extra high-voltage transmission in power system expansion, the manufacturers of power apparatus and the electric utilities are studying the nature of overvoltages in power systems due to lightning and, in particular, switching operations. For such analyses, knowledge of the natural frequencies of the windings of transformers under a wide variety of conditions is important. The work reported by the author in a previous paper is extended and equivalent circuits have been developed to represent several sets of terminal conditions. These equivalent circuits can be used to determine the natural frequencies and transient voltages in the windings. Comparison of the measured and the computed results obtained with a model transformer indicates that they are in good agreement. Hence, this method of analysis provides a satisfactory procedure for the estimation of natural frequencies and transient voltages in transformer windings.

Growth of silicon nanowires by electron beam evaporation using indium catalyst

For the first time silicon nanowires have been grown on indium (In) coated Si (100) substrates using e-beam evaporation at a low substrate temperature of 300 degrees C. Standard spectroscopic and microscopic techniques have been employed for the structural, morphological and compositional properties of as grown Si nanowires. The as grown Si nanowires have randomly oriented with an average length of 600 nm for a deposition time of 15 min. As grown Si nanowires have shown indium nanoparticle (capped) on top of it confirming the Vapor Liquid Solid (VLS) growth mechanism. Transmission Electron Microscope (TEM) measurements have revealed pure and single crystalline nature of Si nanowires. The obtained results have indicated good progress towards finding alternative catalyst to gold for the synthesis of Si nanowires. (C) 2011 Elsevier B.V. All rights reserved.

Colloidal calcium nanoparticles: digestive ripening in the presence of a capping agent and coalescence of particles under an electron beam

The nanochemistry of calcium remains unexplored, which is largely due to the inaccessibility of calcium nanoparticles in an easy to handle form by conventional methods of synthesis as well as its highly reactive and pyrophoric nature. The synthesis of colloidal Ca nanoparticles by the solvated metal atom dispersion (SMAD) method is described. The as-prepared Ca-THF nanoparticles, which are polydisperse, undergo digestive ripening in the presence of a capping agent, hexadecyl amine (HDA) to afford highly monodisperse colloids consisting of 2-3 nm sized Ca-HDA nanoparticles. These are quite stable towards precipitation for long periods of time, thereby providing access to the study of the nanochemistry of Ca. Particles synthesized in this manner were characterized by UV-visible spectroscopy, high resolution electron microscopy, and powder X-ray diffraction methods. Under an electron beam, two adjacent Ca nanoparticles undergo coalescence to form a larger particle.

Isolating CP-violating gamma ZZ coupling in e(+)e(-) -> gamma Z with transverse beam polarizations

We revisit the process e(+)e(-) -> gamma Z at the ILC with transverse beam polarization in the presence of anomalous CP- violating gamma ZZ coupling lambda(1) and gamma gamma Z coupling lambda(2). We point out that if the final- state spins are resolved, then it becomes possible to fingerprint the anomalous coupling Re lambda(1). 90% confidence level limit on Re lambda(1) achievable at ILC with center- of- mass energy of 500 GeVor 800 GeV with realistic initial beam polarization and integrated luminosity is of the order of few times of 10(-2) when the helicity of Z is used and 10(-3) when the helicity of gamma is used. The resulting corrections at quadratic order to the cross section and its influence on these limits are also evaluated and are shown to be small. The benefits of such polarization programmes at the ILC are compared and contrasted for the process at hand. We also discuss possible methods by which one can isolate events with a definite helicity for one of the final- state particles.

Rainbow Connection Number and Connectivity

The rainbow connection number, rc(G), of a connected graph G is the minimum number of colors needed to color its edges, so that every pair of vertices is connected by at least one path in which no two edges are colored the same. Our main result is that rc(G) <= inverted right perpendicularn/2inverted left perpendicular for any 2-connected graph with at least three vertices. We conjecture that rc(G) <= n/kappa + C for a kappa-connected graph G of order n, where C is a constant, and prove the conjecture for certain classes of graphs. We also prove that rc(G) < (2 + epsilon)n/kappa + 23/epsilon(2) for any epsilon > 0.

Growth of rutile TiO2 nanorods on TiO2 seed layer deposited by electron beam evaporation

Dense rutile TiO2 nanorods were grown on anatase TiO2 seed layer coated glass substrate by solution technique. The crystalline nature of nanorods has confirmed by transmission electron microscopy. The band gap of the TiO2 seed layer and nanorods were calculated using the UV-vis absorption spectrum and the band gap value of the anatase seed layer and rutile nanorods were 3.39 eV and 3.09 eV respectively. Water contact angle measurements were also made and showed that the contact angle of rutile nanorods was (134 degrees) larger than the seed layer contact angle (93 degrees). The RMS surface roughness of the TiO2 seed layer (0.384 nm) and nanorods film (18.5 nm) were measured by an atomic force microscope and correlated with their contact angle values. (C) 2011 Elsevier B.V. All rights reserved.

Role of water contamination within the GC column of a GasBench II peripheral on the reproducibility of O-18/O-16 ratios in water samples

The GasBench II peripheral along with MAT 253 combination provides a more sensitive platform for the determination of water isotope ratios. Here, we examined the role of adsorbed moisture within the gas chromatography (GC) column of the GasBench II on measurement uncertainties. The uncertainty in O-18/O-16 ratio measurements is determined by several factors, including the presence of water in the GC. The contamination of GC with water originating from samples as water vapour over a longer timeframe is a critical factor in determining the reproducibility of O-18/O-16 ratios in water samples. The shift in isotope ratios observed in the experiment under dry and wet conditions correlates strongly with the retention time of analyte CO2, indicating the effect of accumulated moisture. Two possible methods to circumvent or minimise the effect of adsorbed water on isotope ratios are presented here. The proposed methodology includes either the regular baking of the GC column at a higher temperature (120 degrees C) after analysis of a batch of 32 sample entries or conducting the experiment at a low GC column temperature (22.5 degrees C). The effects of water contamination on long-term reproducibility of reference water, with and without baking protocol, have been described.

Spectral Element Approach to Wave Propagation in Uncertain Composite Beam Structures

This paper presents a study of the wave propagation responses in composite structures in an uncertain environment. Here, the main aim of the work is to quantify the effect of uncertainty in the wave propagation responses at high frequencies. The material properties are considered uncertain and the analysis is performed using Neumann expansion blended with Monte Carlo simulation under the environment of spectral finite element method. The material randomness is included in the conventional wave propagation analysis by different distributions (namely, the normal and the Weibul distribution) and their effect on wave propagation in a composite beam is analyzed. The numerical results presented investigates the effect of material uncertainties on different parameters, namely, wavenumber and group speed, which are relevant in the wave propagation analysis. The effect of the parameters, such as fiber orientation, lay-up sequence, number of layers, and the layer thickness on the uncertain responses due to dynamic impulse load, is thoroughly analyzed. Significant changes are observed in the high frequency responses with the variation in the above parameters, even for a small coefficient of variation. High frequency impact loads are applied and a number of interesting results are presented, which brings out the true effects of uncertainty in the high frequency responses. [DOI: 10.1115/1.4003945]

Reactive biased target ion beam deposited W-DLC nanocomposite thin films - Microstructure and its mechanical properties

Tungsten incorporated diamond like carbon (W-DLC) nanocomposite thin films with variable fractions of tungsten were deposited by using reactive biased target ion beam deposition technique. The influence of tungsten incorporation on the microstructure, surface topography, mechanical and tribological properties of the DLC were studied using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy. Atomic force microscope (AFM), transmission electron microscopy (TEM), nano-indentation and nano-scratch tests. The amount of W in films gets increases with increasing target bias voltage and most of the incorporated W reacts with carbon to form WC nanoclusters. Using TEM and FFT pattern, it was found that spherical shaped WC nanoclusters were uniformly dispersed in the DLC matrix and attains hexagonal (W2C) crystalline structure at higher W concentration. On the other hand, the incorporation of tungsten led to increase the formation of C-sp(2) hybridized bonding in DLC network and which is reflected in the hardness and elastic modulus of W-DLC films. Moreover, W-DLC films show very low friction coefficient and increased adhesion to the substrate than the DLC film, which could be closely related to its unique nanostructure of the W incorporated thin films. (C) 2011 Elsevier B.V. All rights reserved.

Bending of metal-filled carbon nanotube under electron beam irradiation

Electron beam irradiation induced, bending of Iron filled, multiwalled carbon nanotubes is reported. Bending of both the carbon nanotube and the Iron contained within the core was achieved using two approaches with the aid of a high resolution electron microscope (HRTEM). In the first approach, bending of the nanotube structure results in response to the irradiation of a pristine kink defect site, while in the second approach, disordered sites induce bending by focusing the electron beam on the graphite walls. The HRTEM based in situ observations demonstrate the potential for using electron beam irradiation to investigate and manipulate the physical properties of confined nanoscale structures. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. doi:10.1063/1.3688083]

Valence band offset at GaN/beta-Si3N4 and beta-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy

Ultra thin films of pure beta-Si3N4 (0001) were grown on Si (111) surface by exposing the surface to radio- frequency nitrogen plasma with a high content of nitrogen atoms. Using beta-Si3N4 layer as a buffer layer, GaN epilayers were grown on Si (111) substrate by plasma-assisted molecular beam epitaxy. The valence band offset (VBO) of GaN/beta-Si3N4/ Si heterojunctions is determined by X-ray photoemission spectroscopy. The VBO at the beta-Si3N4 /Si interface was determined by valence-band photoelectron spectra to be 1.84 eV. The valence band of GaN is found to be 0.41 +/- 0.05 eV below that of beta-Si3N4 and a type-II heterojunction. The conduction band offset was deduced to be similar to 2.36 eV, and a change of the interface dipole of 1.29 eV was observed for GaN/ beta-Si3N4 interface formation. (c) 2011 Elsevier B.V. All rights reserved.